Impact of Deposition Mechanisms on Feature Sizes in Area-Selective Atomic Layer Deposition of TiO2 and HfO2

A study from Georgia Techinvestigates the mechanisms behind area-selective atomic layer deposition (AS-ALD) of titanium dioxide (TiO2) and hafnium dioxide (HfO2) on poly(methyl methacrylate) (PMMA) and silicon (Si) substrates, emphasizing their effects on feature sizes and film thickness. The researchers found that TiO2 exhibits highly selective deposition on Si compared to PMMA, though the PMMA sidewalls inhibit deposition, resulting in smaller feature dimensions than the original patterns. In contrast, HfO2, while less selective, combines selective deposition with a lift-off mechanism, allowing for smaller feature sizes but limiting the possible thickness before full coverage occurs.

The study highlights that TiO2's truly area-selective deposition mechanism causes significant sidewall inhibition, restricting the achievable feature size to larger dimensions. However, HfO2's combination of selective deposition and lift-off results in less sidewall inhibition, enabling the formation of much smaller features. The research further suggests that the choice of deposition material and the mechanism it employs critically influences the minimum feature sizes that can be achieved in semiconductor fabrication, with practical implications for future device miniaturization.

Summary of the mechanisms for AS-ALD of TiO2 and HfO2 using a PMMA area-selective mask, along with the corresponding benefits and limitations of each material. J. Phys. Chem. C 2024, XXXX, XXX, XXX-XXX

The findings underscore that the AS-ALD mechanism—whether a pure area-selective process or a combination with lift-off—directly affects the precision and scalability of nanofabrication. TiO2's area-selective mechanism is more effective for creating precise patterns but is limited by sidewall effects, while HfO2 offers greater flexibility in feature size at the cost of potential thickness limitations due to less selective deposition behavior. Potentially the research provides valuable insights for optimizing deposition techniques in advanced semiconductor manufacturing.

Source

Mechanisms of Area-Selective Atomic Layer Deposition and Their Impact on Feature Sizes | The Journal of Physical Chemistry C (acs.org)

Innovations in Atomic and Molecular Layer Deposition of Rare Earth-Based Functional Thin Films: Expanding Horizons in Electronics and Optoelectronics

In a recent article, researches from Germany (Bochum University) and Finland (Aalto University) explore the evolution and advancements in the atomic layer deposition (ALD) and molecular layer deposition (MLD) techniques for rare earth-based thin films, emphasizing their role in diverse applications ranging from microelectronics to optoelectronics and medical diagnostics. Initially focused on developing rare earth oxides as high-k dielectric materials in semiconductor devices, research has expanded to include complex ternary and quaternary perovskite oxides with unique magnetic and catalytic properties. The recent surge in ALD/MLD techniques has enabled the creation of rare earth-organic hybrid materials with intriguing luminescence properties, promising new avenues for applications in lighting, imaging, and solar cells.

Survey over the different rare earth precursor classes commonly employed for the ALD and ALD/MLD of rare earth containing thin films. Color bars indicate successful ALD employment of the compound class for the respective element. R represents an element of the extended rare earth elements, while R’ and R’’ refer to specific substituents. These are: H = Hydrogen, Me = Methyl, Et = Ethyl, iPr = Isopropyl, nBu = Butyl, tBu = Tert-butyl.

The review also highlights the challenges associated with precursor development and the need for further research to optimize the chemical reactivity and long-term stability of these materials. The potential for these novel materials to revolutionize industries is significant, particularly in the creation of flexible devices and advanced optoelectronic applications. However, according to the article, achieving widespread industrial adoption will require continued collaboration between academia and industry to refine processes, enhance material performance, and ensure scalability.

Annually published ALD and ALD/MLD articles involving rare earth elements from 1992 to 2023. The publications were searched from Scopus and Web of Science, using search terms that included “atomic layer deposition” and “rare earth”, or “atomic layer deposition” and “lanthanide”. The data thus acquired were further manually refined to check for numbers as accurate as possible. Data were accessed lastly on 10-02-2024.

Source: Atomic and Molecular Layer Deposition of Functional Thin Films Based on Rare Earth Elements - Ghazy - Advanced Materials Interfaces - Wiley Online Library

Optimizing Atomic Layer Deposition Processes with Nanowire-Assisted TEM Analysis - Reducing Process Development CycleTimes by 80%

Researchers from  Empa, the Swiss Federal Laboratories for Materials Science and Technology located in Switzerland, have developed a novel method to optimize Atomic Layer Deposition (ALD) processes using high-aspect ratio nanowires coupled with Transmission Electron Microscopy (TEM). By directly depositing materials onto nanowires placed on TEM grids, the team was able to conduct immediate post-deposition analysis, significantly speeding up the optimization of process parameters such as layer thickness, chemical composition, and conformality. This approach allows for rapid feedback and adjustment, reducing the time required to fine-tune ALD processes by a factor of five. 

The study focused on optimizing the deposition of aluminum oxide using a standard trimethylaluminum (TMA) and water process. By varying cycle numbers, temperature, and pulse/purge times, the researchers identified optimal conditions for the ALD process, achieving a uniform and stoichiometric aluminum oxide layer. This method also revealed early-stage non-uniform growth in the initial cycles, providing new insights into ALD mechanisms. The researchers propose that this technique could extend beyond ALD to other deposition processes, offering a powerful tool for the rapid development and refinement of thin-film deposition technologies.

Source: Optimizing Atomic Layer Deposition Processes with Nanowire‐Assisted TEM Analysis - Schweizer - 2024 - Advanced Materials Interfaces - Wiley Online Library

The 2024 1st Asian-Pacific Atomic Layer Deposition (AP-ALD) Conference Shanghai, China, from October 17 to 20, 2024

Following the successes of the previous four international Conferences on ALD Applications and ten China ALD Conferences since 2010. the 2024 1st Asian-Pacific Atomic Layer Deposition (AP-ALD) Conference will be a four-day meeting, dedicated to the fundamentals and applications of Atomic Layer Deposition (ALD) technology in various fields. It will be held in Shanghai, China, from October 17 to 20, 2024. This conference will feature plenary sessions, oral sessions, poster sessions and industrial exhibitions.

The ALD technique has been widely used and explored in numerous fields such as microelectronics, photoelectronics, optical coating, functional nanomaterials, MEMS/NEMS, energy storage, biotechnology, catalysis technology and etc. This is attributed to some unique advantages of ALD, including precise control of nano-scale thickness, superior uniformity across a large area, excellent conformity, relatively low deposition temperature and stoichiometric composition. Especially in the field of microelectronics, ALD has been involved deeply into advanced integrated circuits to prepare high-k/metal gate, spacer, and ultrathin diffusion barriers for Cu interconnects etc. Furthermore, ALD is also receiving great attention for its potential application in photovoltaics, flexible electronics, organic electronics, flat-panel display and other emerging areas.

Invited speakers: Invited Speakers – AP-ALD

Conference Web: AP-ALD – ALD2024

TSMC's 22ULL ReRAM with Ruthenium Layer Challenges Fujitsu's TaO-Based Technology with an Iridium layer in Embedded Memory Race

Techinsights reports (link below) that TSMC and Fujitsu are leading the charge in embedded ReRAM technology, with TSMC's new 22ULL eReRAM introducing a significant challenge to Fujitsu's established 40 nm TaO-based eReRAM. Both companies employ different resistive materials—Fujitsu uses a tantalum oxide (TaO) layer enhanced with an iridium layer, while TSMC incorporates a hafnium oxide (HfO) layer, paired with a ruthenium (Ru) layer, which enhances performance and reliability. TSMC's 22ULL platform, featuring this advanced HfO and Ru-based ReRAM, is set to challenge Fujitsu's position, especially in critical applications like automotive and IoT, where efficiency and capacity are paramount. With TSMC offering both eMRAM and eReRAM solutions, the competition between these technologies will significantly influence the future of embedded memory devices.

Other materials with similar resistive switching properties include: titanium oxide (TiOx), nickel oxide (NiO), zinc oxide (ZnO), zinc titanate (Zn2TiO4), Manganese oxide (MnOx), magnesium oxide (MgO), aluminum oxide (AlOx), and zirconium dioxide (ZrO2).

Screendumps from Techinsights website, Top an overview table and below TSMC resp. Fujitsu 28 nm ReRAM.

Sources:

TSMC vs. Fujitsu: A Brief Comparison of 22ULL Embedded ReRAM Technologies | TechInsights

South Korea's Exports Surge in August Driven by Semiconductors; SK Hynix Leads 1c DRAM Production, Samsung Confirms Investment for 2025 Launch; Both Giants to Adopt Next-Gen Photoresist Technologies

In the first 10 days of August 2024, South Korea's exports increased by 16.7% year-on-year, reaching $15.5 billion, driven primarily by a significant 42.1% surge in semiconductor exports. Other sectors like petroleum products and automobiles also saw growth, with automobile exports rising sharply by 63.9%. However, machinery product exports declined by 10.6%. Imports grew by 13.4% to $18.4 billion, resulting in a trade deficit of $2.9 billion. Notably, exports to major trading partners China and the United States increased by 10.7% and 27.7%, respectively. This continues a trend of export growth, marking the tenth consecutive month of gains as of July.

SK hynix has announced it will begin mass production of its 6th generation (1c) 10nm class DRAM in the third quarter of 2024, ahead of Samsung Electronics, which plans to start production by the end of the year. SK hynix has already established an internal road map to achieve customer certification and start production, potentially positioning itself to capture significant demand from major tech companies like Amazon and Microsoft once Intel certifies its DRAM for server use. The 6th generation DRAM, utilizing advanced Extreme Ultraviolet (EUV) lithography, promises higher chip yields and improved power efficiency compared to previous generations.

Samsung has confirmed its investment in the Pyeongtaek P4 plant for the production of 6th-generation 1c DRAM, with plans to begin mass production in June 2025. This next-generation DRAM, which uses 10nm-class technology, is still not commercialized globally, but Samsung and SK hynix are preparing for its mass production. Despite initial delays due to a downturn in the semiconductor market, Samsung is now expanding its P4 facility, initially installing NAND flash equipment and confirming plans for 1c DRAM production. The company also anticipates launching HBM4 using 1c DRAM by the second half of 2025, aligning with forecasts of significant growth in the memory industry's revenues.

Both Samsung and K Hynix plans to adopt Inpria's metal oxide resist (MOR) technology in the production of 1c DRAM, utilizing MOR to draw the finest lines on one of the five to six  EUV layers in the 1c DRAM. This adoption aims to enhance performance and reduce costs in future DRAMs. MOR is seen as a next-generation alternative to the chemically amplified resist (CAR) currently used in advanced chip lithography, addressing CAR's limitations in resolution, etching resistance, and line edge roughness. 

In 2021, JSR Corporation announced its acquisition of Inpria Corporation, the leading innovator in metal oxide photoresist technology for EUV lithography, solidifying its focus on advancing semiconductor materials.

Samsung is considering multiple suppliers for its EUV MOR photoresist needs beyond Inpria, including companies like Dupont, Dongjin Semichem, and Samsung SDI. These alternatives are currently being tested as the company explores the best options for its 1c DRAM production. 

Lam Research refers to its inorganic photoresist technology as "dry resist," which reportedly is expected to be supplied for Gen 7 10nm (1d) DRAM production, anticipated to launch next year. This dry resist is deposited by ALD and represents a further evolution in PR technology, potentially offering enhanced performance for the next generation of DRAM manufacturing.

Exports increase 16.7 percent in first 10 days of August - The Korea Times

SK hynix Leads with ‘6th Generation 10 nm’ DRAM Production Ahead of Samsung - Businesskorea

[News] Samsung Reportedly Confirms Investment in Pyeongtaek P4 Plant for 6th-Generation 1c DRAM | TrendForce Insights

SK Hynix to adopt Inpria MOR in 1c DRAM - THE ELEC, Korea Electronics Industry Media (thelec.net)

Samsung said to consider Inpria's metal oxide resist for 1c DRAM process (digitimes.com)

Samsung considering applying metal oxide resist in next DRAM - THE ELEC, Korea Electronics Industry Media (thelec.net)

ALD for Industry, March 11-12, 2025 in Dresden

The 8th International Conference “ALD FOR INDUSTRY” will again bridge the gap between fundamental science, industrialization and commercialization of this technology. Atomic layer deposition (ALD) is a process for depositing a variety of thin film materials from the vapor phase of matter. The growth of this technology is not only based in microelectronics applications, but also in areas of industrial Li-Ion batteries, photovoltaics, optics, light, biomedicine and quantum technology.

This event is already establied since 2017 and attracts annually more than 100 participants and numerous exhibitors to visit Dresden. The Conference with Tutorial provides the opportunity to learn more about fundamentals of ALD technology, to get informed about recent progress in the field and to get in contact with industrial and academic partners. Increase your visibility and present your company in our accompanying exhibition.

The next event will take place in March 11 – 12, 2025 in Dresden. Please do not miss the chance to submit your abstract to present your recent research in the field of ALD, show application examples or present accompanying technologies like metrology, combinations of technological approaches like plasma technology or vacuum technologies.

You would like to present your new developments and research results?

Please send your abstract to info@efds.org until September 15, 2024.

Forge Battery Begins Shipping High-Energy 300 Wh/kg Lithium-Ion Cells Made in The USA

Forge Battery, a subsidiary of Forge Nano, has initiated the shipment of its advanced 21700 cylindrical lithium-ion battery cells, branded as “Gen. 1.1 Supercell,” to customers and potential partners. The cells, which boast a specific energy of 300 Wh/kg, have passed rigorous safety certifications (UN 38.3 and UL 1642), allowing for safe transportation. The company plans to deliver thousands of cells throughout 2024, fulfilling existing customer commitments and generating interest from new markets. These cells are designed with over 20% silicon in the anode and use NMC 811 cathodes, outperforming U.S. Advanced Battery Consortium (USABC) energy density targets and reducing costs by 20% per kWh.

The Supercells incorporate Forge Nano’s proprietary Atomic Armor™ coating technology, enhancing the durability and performance of the cells by preventing unwanted chemical reactions. With 90% of the materials sourced from U.S. suppliers, Forge Battery is set to become a key player in the domestic battery market, aiming for full-scale production at its upcoming North Carolina Gigafactory in 2026. These cells are targeted at high-performance applications, including electric trucks, aerospace, and defence, with the potential to outcompete current Tier 1 global suppliers.

Source:

Forge Battery Begins Bulk Customer Shipments of 300 Wh/kg Lithium-Ion Battery Cells - Forge Nano

JSR Corporation Completes Strategic Acquisition of Yamanaka Hutech Corporation to Bolster Semiconductor Materials Portfolio with CVD and ALD Precursors

On August 2, 2024, JSR Corporation announced the successful acquisition of Yamanaka Hutech Corporation, a renowned supplier of high-purity chemicals for the semiconductor industry. The acquisition, finalized on August 1, 2024, positions YHC as a wholly-owned subsidiary of JSR. This strategic move allows JSR to enhance its product offerings, particularly in semiconductor film-forming technologies, and aligns with its growth strategy aimed at strengthening its presence in the advanced semiconductor materials sector. JSR is committed to driving innovation, optimizing supply chains, and maintaining strong customer relationships as the semiconductor industry undergoes significant changes.

JSR Corporation's acquisition of Yamanaka Hutech Corporation (YHC) brings YHC's high-purity CVD and ALD precursors into JSR's portfolio, enhancing its capabilities in semiconductor materials. YHC, with over 60 years of expertise in advanced molecular design and synthesis technology, has a strong track record in supplying high-quality CVD/ALD precursors, particularly in competitive ALD material areas. This acquisition allows JSR to diversify beyond its traditional focus on photoresists and strengthens its position as a global leader in advanced semiconductor materials, poised to drive innovation in both miniaturization and device structure advancements.

Sources:

JSR Completes Acquisition of All Shares in Yamanaka Hutech ~ Accelerating Semiconductor Materials Industry Reorganization~ | 2024 | News | JSR Corporation

JSR to make Yamanaka Hutech, a high-purity chemical for semiconductors, a wholly owned subsidiary ~Expanding the product portfolio in the field of cutting-edge semiconductor deposition~ | 2024 | News | JSR Corporation

Jusung Engineering Posts Stellar Q2 Recovery with 207% Sales Surge, Driven by Semiconductor Market Rebound

Jusung Engineering reported a robust financial recovery in the second quarter of 2024, with sales soaring by 207% to 97.3 billion won ($72.0 million) compared to the same period last year, and an operating profit margin of 37%. This turnaround follows a challenging first quarter and is driven by increased orders and deliveries of semiconductor equipment, including a significant contract with SK Hynix for DRAM manufacturing in China. The company's expertise in Atomic Layer Deposition (ALD) technology and its expansion into OLED and solar power sectors position it well for continued growth as the semiconductor market rebounds.

Sources:

Jusung Engineering Reports Robust Q2 Results with 207% Sales Growth - Businesskorea

Materion Achieves Record-Breaking Q2 Results, Strengthened by Consumer Electronics and Aerospace Growth

Materion is a major Tier 2 supplier of ALD precursors to the big Tier 1 companies. In the second quarter of 2024, Materion Corporation delivered record-breaking results, reflecting the company's recovery after a challenging start to the year. The improvement was primarily driven by organic growth initiatives, strong operational performance, and cost management. Key areas of growth included aerospace and defense, consumer electronics, and a gradual recovery in the semiconductor market. Despite some softness in industrial and automotive sectors, Materion secured several new business partnerships, particularly in aerospace and defense, bolstering long-term growth prospects. The company also achieved its midterm EBITDA margin target of 20% for the third time in five quarters and remains focused on operational excellence and sustainable earnings growth for the remainder of the year.

2024 Outlook

• Semiconductor market recovery slower than prior expectations
• Continued benefit from cost improvement initiatives

Specifically, Materion's expansion into ALD products has been significant for supporting advanced semiconductor production, especially in the context of rapid digitization and AI advancements. The company received an excellent supplier award from a leading ALD customer, highlighting its successful innovation in ALD materials. This expansion into ALD not only supports complex chip production but also positions Materion to capitalize on the growing demand in the semiconductor industry. Despite a slower-than-expected semiconductor market recovery, the company's strategic moves in ALD and other high-tech sectors are expected to drive continued growth and margin expansion in the future.

Materion Corporation has significantly expanded its capabilities in ALD products, particularly focusing on advanced materials for the semiconductor industry such as Hafnium and Molybdenum. The company produces ALD precursors, which are critical for creating the ultra-thin films required in the manufacturing of next-generation semiconductor chips. Recently, these materials also include tantalum and niobium-based compounds, which were added to Materion's portfolio following the acquisition of H.C. Starck's electronic materials business in 2021.

Materion's new facility in Milwaukee, Wisconsin, is dedicated to enhancing the production of these ALD materials, positioning the company as a key supplier in the high-growth semiconductor market. The facility also supports the development of next-generation battery technologies for electric vehicles, indicating the strategic importance of ALD materials in both semiconductor and EV markets​

Sources:

Atomic Layer Deposition

Business Wire

Materion Corporation (MTRN) Q2 2024 Earnings Call Transcript | Seeking Alpha

ACM Research Advances in ALD with Ultra FnA Furnace System for Semiconductor Manufacturing

ACM Research, a US company specializing in wafer cleaning equipment for the semiconductor industry, presents a strong growth opportunity. The company beat Q2 estimates, raised its fiscal year guidance, and is well-positioned to benefit from the expected significant growth in the wafer cleaning equipment market, particularly in China. ACM Research's competitive advantages include high investment in R&D and the ability to provide highly customized solutions. 

The Ultra FnA Furnace System by ACM Research is designed for the precise and uniform deposition of ultra-thin films using thermal Atomic Layer Deposition (ALD), which is essential for advanced integrated circuits (ICs) and compound semiconductor manufacturing as logic nodes shrink. It effectively deposits silicon nitride (SiN) and silicon carbide nitride (SiCN) on high aspect ratio 3D structures, such as FinFETs and nanosheets, ensuring good step coverage and uniformity across wafers. The system boasts superior process control through its innovative hardware and proprietary algorithms, offering high-throughput batch processing, cost-effectiveness, and customization for various advanced semiconductor processes, with the capability to process up to 100 wafers at a time.

ACM Research Advances in ALD with Ultra FnA Furnace 300 mm System for Semiconductor Manufacturing

About ACM Research

ACM Research offers a comprehensive portfolio of tools designed to support various semiconductor manufacturing applications, including ICs, compound semiconductors, wafer-level packaging, and wafer manufacturing. Their advanced product range includes solutions for multiple processing steps such as wet cleaning, electroplating, thermal deposition, ALD, and more. Known for delivering customized, high-performance technology that enhances productivity and efficiency, ACMR is committed to meeting the diverse needs of high-volume manufacturing with a low cost of ownership. With a strong IP portfolio and a global presence, ACMR leverages its extensive industry expertise and international support network to provide innovative solutions and world-class service to customers across Asia, North America, and Europe. Founded in California in 1998, the company operates manufacturing and support facilities in China and South Korea.

Sources:

Ultra FnA ALD Furnace System - ACM Research, Inc.

ACM Research: A Promising Semiconductor Growth Opportunity Outpacing Risks (NASDAQ:ACMR) | Seeking Alpha

The AVS ALD ALE 2024 Conference in Helsinki - Record Breaking Attendance and Deposition Speed of ALD

The AVS ALD ALE 2024 conference in Helsinki, Finland, which took place from August 4-7, 2024, attracted significant attention number of delegates (number still pending) and reporting on social media among professionals in the field of atomic layer deposition and etching. Participants and companies highlighted key moments and innovations presented during the conference.

One of the major highlights shared on platforms like X/Twitter was the celebration of the 50th anniversary of Atomic Layer Deposition (ALD), with special recognition given to Dr. Tuomo Suntola, the pioneer of ALD technology. His opening remarks were highly anticipated and well-received, marking a significant milestone in the field.

#ALDALE2024 Plenary Talk provided by Tuomo Suntola with a full house. 50 Years in the making! @AVS_Members pic.twitter.com/9W106TGSWm

— Heather Korff (@HeatherKorff) August 5, 2024

Attendees shared their experiences from the welcome reception and the technical sessions, with many noting the high caliber of presentations and the importance of networking opportunities provided by the event under the tag #ALDALE2024 (#ALDep - Search / X (twitter.com)). Overall, social media posts reflected an as usual vibrant and engaged ALD & ALE community, excited about the advancements and collaborations emerging at AVS ALD 2024 in Helsinki.

The 2024 Chairs for ALD Prof. Mikko Ritala and Prof. Markku Leskelä and for ALE Prof. Fred Roozeboom and Dr. Dmitry Suyatin. In the middle ASM Internationals former CTO Ivo Raaijmakers and on the rigt Dr. Tuomo Suntola, The ALD Inventor himself. LINK

The largest group photo at the ALD/ALE 2024 backdrop by registration - Helsinki University! LINK

A Crowded House for the Plenary by Dr. Suntola. LINK

Congratulations to ALD Innovator Awardee Annalise Delabie also presenting to a full house! LINK

Plenary talk by Ivo Raaijmakers, The leading ALD company ASM International. LINK

Best poster ALD 2024 Award by BALD Engineering. Thermal Ru without desalination by Parmish Kaur. LINK

One of numerous Finnish Sauna Events LINK

ALD Tough Guys and social events. LINK

Additionally, the leading ALD & ALE companies showcased their latest advancements. For example, Lotus Applied Technology drew attention for their presentation on ultra-high-speed ALD film growth, achieving deposition rates of 30 Å/second while maintaining film uniformity. This breakthrough was a trending topic among attendees, reflecting the ongoing innovation in the ALD sector.

Lotus Applied Technology reported: The research on ultra-high-speed spatial Plasma-Enhanced Atomic Layer Deposition (PEALD) introduces a novel approach to separating ALD half-reactions by leveraging a unique plasma-based mechanism. Instead of traditional differential flow and pumping, the process utilizes a gas shroud surrounding the plasma electrode, which facilitates the neutralization of oxidation radicals, preventing interaction with metal precursor vapors within the reactor. This method effectively separates the reactive species and allows for high deposition rates, achieving coating speeds over 25 angstroms per second for SiO₂ films. The process also includes innovations to reduce ozone byproducts, such as using carbon dioxide as the plasma gas and applying an active catalyst in the exhaust path​ (Lotus Applied Technology | Home).

At the end the AVS ALD ALE 2025 was presented: The AVS 25th International Conference on Atomic Layer Deposition (ALD 2025) featuring the 12th International Atomic Layer Etching Workshop (ALE 2025) will be a three-day meeting dedicated to the science and technology of atomic layer controlled deposition of thin films and atomic layer etching. Since 2001, the ALD conference has been held alternately in the United States, Europe and Asia, allowing fruitful exchange of ideas, know-how and practices between scientists. The conference will take place Sunday, June 22-Wednesday, June 25, 2025, at the International Convention Center Jeju (ICC Jeju), Jeju Island, South Korea. ald2025 (avs.org)

ALD Program Chair:
Prof. Han-Bo-Ram (Boram) Lee
(Incheon National University, South Korea)


ALE Program Chair:
Prof. Heeyeop Chae
(Sungkyunkwan University, South Korea)

The 2024 Chairs handing over to the 2025 Chairs in Korea. LINK

Lithography Materials Headed for Upwards Growth

PFAS elimination efforts expected to drive migration to photoresist alternatives

San Diego, CA, August 8, 2024: TECHCET— the electronic materials advisory firm providing business and technology information —is forecasting semiconductor photoresist revenues to increase by nearly 11% in 2024. Overall semiconductor market recovery is expected in 2024, particularly in the second half, which should drive increased demand for all resists. In parallel, photoresist ancillaries are expected to increase by around 10%, and extensions by around 9%. More details on photoresist volume and revenue forecast by material can be found in TECHCET's new Lithography Materials Critical Materials Report™.

Recent pushes in the EU and US to eliminate PFAS-related chemicals are expected to gradually impact future photoresist material compounds. Photoresists that use photoacid generating (PAG) compounds have been qualified and used for many years, making it challenging to switch away to alternatives. While numerous companies and universities are working to develop non-PFAS-related PAGs, current performance is not yet meeting all process requirements. Consequently, defining suitable non-PFAS PAG alternatives and transitioning effectively is expected to take 5-10 years.

To read the full article, go to: https://lnkd.in/gKadBq7Z

The newly released TECHCET Critical Materials Reports™ on Lithography Materials contains details on market and technology trends and supplier profiles. For the full table of contents or to request a sample report, visit https://lnkd.in/esXU6SW

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AVS ALD/ALE conference returns to Helsinki after 20 years to celebrate 50 years of ALD!

The AVS 24th International Conference on Atomic Layer Deposition (ALD 2024), alongside the 11th International Atomic Layer Etching Workshop (ALE 2024), will be held from August 4-7, 2024, at Messukeskus in Helsinki. Organized by the American Vacuum Society (AVS), the event returns to Helsinki after 20 years to mark the 50th anniversary of Dr. Tuomo Suntola's pioneering work on ALD. Dr. Suntola, who received the Millennium Technology Prize in 2018 for his contributions to ALD, will deliver the opening remarks. Professors Mikko Ritala and Markku Leskelä from the Department of Chemistry serve as the program chairs for this year's conference.

The ALD conference, focusing on the science and technology of atomic layer controlled deposition and etching of thin films, alternates between the United States, Europe, and Asia. The last Helsinki event in 2004 celebrated 30 years of ALD. This year's conference is expected to break attendance records with nearly one thousand participants and received an unprecedented 502 abstracts. The event highlights significant industry involvement, with 55% participation from industry representatives last year

The plenary talk will be given by Dr. Ivo J. Raaijmakers of ASM, The Netherlands, emphasizing the long-standing collaboration between the University of Helsinki and ASM. Countries contributing the most abstracts include the United States, South Korea, Germany, Finland, the Netherlands, and Japan.

ALD/ALE conference returns to Helsinki after 20 years | Faculty of Science | University of Helsinki

Conference page: ald2024 (avs.org)

Chipmetrics Launches New Test Chips for Advanced Atomic Layer Processes

Finnish 3D thin film semiconductor metrology specialist launches new PillarHall LHAR5 test chip with 100 nanometer gap height, complements its metrology solution with new ASD-1 chip for Area Selective Deposition.

Joensuu, Finland – July 15th, 2024 – Chipmetrics Oy, an innovative metrology solutions provider to the semiconductor industry, announces the launch of two new test chips, the PillarHall LHAR5 and the ASD-1. The PillarHall LHAR5 silicon test chip builds on the success of its predecessor PillarHall LHAR4, with the new LHAR5 test chips being better suited for the most advanced 3D semiconductor device high aspect ratio structures with a gap height as low as 100 nm. Fitting seamlessly into Chipmetrics’ pocket wafer concept, it also allows for fast and accurate process control with full 300-millimeter compatibility.

The PillarHall LHAR5 test chip comes in two variations, with a 100-nanometer and a 500-nanometer gap height. The new 100-nanometer gap height allows engineers to research and compare possible dimensional effects in film penetration depth in line with 500-nanometer gap chips. This allows for new insights into film conformality control and a deeper understanding of 3D NAND, DRAM and other nanoelectronics containing high aspect ratio structures.

“With the launch of PillarHall LHAR5, ASD-1 and the 300-millimeter pocket wafer concept our product line is compatible with the most advanced and challenging semiconductor deposition and etch technologies like ALD, ALE and ASD. The Chipmetrics test chips with our pocket wafer concept is directly compatible with and ready to be used in all existing deposition tools,” says Mikko Utriainen, CEO of Chipmetrics.

The Chipmetrics ASD-1: Prototyping and Process Control for Area Selective Deposition workflows

Launched concurrently with the PillarHall LHAR5 is the Chipmetrics ASD-1 test chip, for prototyping and process control of Area Selective Deposition (ASD) workflows. As the name implies, ASD allows for selective growth of thin films on specific substrate areas, while avoiding it on others, with the ASD-1 test chip aiming to give customers easy access to high-quality data for process control and R&D.

The ASD-1 test chip features a high surface planarity, low line edge roughness, and small line widths which are crucial for ASD applications in advanced semiconductor manufacturing. The ASD-1 test chip features arrays of sub-100 nanometer narrow line structures with alternating materials aligned on the planar silicon substrate for accurately characterizing self-aligned area selective depositions through either Atomic Layer Deposition (ALD) or Chemical Vapor Deposition (CVD) and related processes. The Chipmetrics ASD-1 helps engineers to accelerate ASD process development to meet challenges in miniaturizing and scaling, as well as in reducing defects and improving yield.

Both the PillarHall LHAR5 and ASD-1 test chips are available immediately. For more information on the products, please visit Chipmetrics.com.

About Chipmetrics

Chipmetrics Oy develops and delivers metrology solutions for manufacturing processes for the semiconductor industry, focusing on innovative metrology chips and ALD measurement services. Its main product is the PillarHall® metrology chip for near-instantaneous thin film process conformality measurement. Founded in 2019, its head office is in Joensuu, Finland, with employees and sales partners in Japan, South Korea, USA, and Germany.

For more information, visit www.chipmetrics.com.

Press contact:

Jonas Klar

Chipmetrics Oy

jonas.klar@chipmetrics.com

pr@chipmetrics.com

Editor’s note on ALD:

Atomic Layer Deposition (ALD) is a precision thin-film deposition technique crucial for semiconductor manufacturing, enabling the production of uniform and conformal layers essential for microelectronic devices. Through alternating exposure to precursor gases that react with the substrate in a self-limiting manner, ALD achieves atomic-level control over film thickness and composition. This method ensures exceptional uniformity across complex geometries, vital for the miniaturized, multi-layered structures such as the future’s 3D chips in advanced semiconductor devices, keeping Moore’s Law alive.

Finland plays a key role in the ALD landscape, having pioneered the process in the 1970s. Finland’s contribution to ALD includes significant advancements in materials science, equipment design, and the exploration of new applications ranging from electronics to renewable energy sectors. The country’s strong emphasis on research and development in nanotechnology has positioned it as a hub for ALD innovation, fostering collaborations between academia, industry, and research organizations worldwide.

Tokyo Electron Introduces Acrevia Tool to Enhance EUV Lithography

Tokyo Electron has introduced Acrevia, a state-of-the-art gas cluster beam (GCB) system aimed at refining patterns created by EUV lithography. This advanced tool is set to reduce the necessity for EUV double patterning, thereby improving chipmaking yields and lowering production costs. Acrevia addresses critical challenges such as line edge roughness (LER), a common issue in lithography that affects the precision of pattern edges and overall chip performance. By optimizing pattern sidewalls through precise etching, Acrevia promises to significantly enhance within-wafer uniformity and mitigate LER, contributing to higher yield and better chip reliability. While not replacing High-NA EUV lithography, Acrevia marks a substantial leap forward in semiconductor manufacturing innovation.

Sources:

Tokyo Electron's new tool can reduce the necessity for EUV double patterning and improve yield | Tom's Hardware (tomshardware.com)

Tokyo Electron Launches Acrevia™, a Gas Cluster Beam System for Ultra-Fine Patterning in EUV Lithography | News Room | Tokyo Electron Ltd. (tel.com)

Chipmetrics' Metrology Workshop

This exclusive workshop provides opportunity to learn about Angstrom scale metrology of ALD thin films in ultra High Aspect Ratio structures. In addition, it gives insights of most advanced rapid analytical methods of ALD conformality.

This unique educational opportunity is being held in the fascinating venue in the lake district of Finland.

Workshop flyer and program can be downloaded from here:

https://chipmetrics.com/wp-content/uploads/2024/05/Chipmetrics%20Metrology%20Workshop-08-08-2024-flyer%20v2.pdf?_t=1716811317

Registration Fee: €650

Date: Thursday, 8th August 2024

Location: Vainoniemi villa, Joensuu, Finland

Contact us at +358 41 740 1098 or zahra.ghaderi@chipmetrics.com

Boosting the Future: Increased ALD Use Paves the Way for Advanced GAAFET Technology

The Biden administration is considering a complete ban on the export of chips utilizing Gate All-Around Field Effect Transistor (GAAFET) technology to China, Bloomberg reports (LINK). The rationale behind this potential ban is the concern that such advanced transistors could be leveraged for military applications and artificial intelligence (AI) advancements by China. This move follows previous restrictions from 2022, when the U.S. barred its Electronic Design and Automation (EDA) companies from selling tools necessary for GAAFET development to China. In addition, advanced chip exports from companies like Nvidia were restricted, with these measures being progressively tightened and expanded over time.

Atomic Layer Deposition (ALD) is celebrating its 50th anniversary in 2024. The anniversary marks 50 years since Dr. Tuomo Suntola and his colleagues filed the first patent for Atomic Layer Epitaxy in 1974, which laid the foundation for ALD technology. This milestone will be celebrated at various events, including the ALD 2024 conference, where Dr. Suntola is expected to deliver the opening remarks .

ASM International, a leader in Atomic Layer Deposition (ALD), plays a crucial role in enabling Gate-All-Around Field Effect Transistors (GAAFETs) and continued semiconductor scaling. ALD's precision in depositing ultra-thin, uniform films is essential for creating the high-performance, low-power structures required by GAAFETs. This technology, along with other advanced processes such as epitaxy and selective etching, supports the intricate fabrication steps needed for these next-generation transistors.

The production of GAAFETs requires a significant increase in the use of ALD technology - maybe up to 40% more according to ASM. ALD is essential for creating the ultra-thin, uniform films needed for GAAFET structures, ensuring high-quality, defect-free layers that are critical for advanced transistor performance. This technology enables precise control over the deposition process, crucial for developing high-k dielectrics and other materials that enhance GAAFET performance and efficiency. As the semiconductor industry now transitions from FinFET to GAAFET technology, leveraging ALD's capabilities is vital for maintaining and advancing Moore's Law, enabling more powerful and energy-efficient chips using existing manufacturing infrastructure

Applied Materials has outlined next-generation tools essential for producing 3nm and GAA transistors, such as those in Samsung's upcoming 3GAE and 3GAP technologies. These advanced tools address the complexities of GAA transistor manufacturing, including precise lithography, epitaxy, and selective materials removal. Applied's Producer Selectra Selective Etch IMS tool is pivotal in defining channel width without damaging surrounding materials, while the Centura Prime Epi tool ensures clean deposition of Si and SiGe nanosheets. Additionally, their Integrated Materials Solution (IMS) systems integrate atomic layer deposition (ALD), thermal steps, and plasma treatments to optimize the gate oxide stack, enhancing performance and reducing gate leakage. These innovations are crucial as they enable higher performance, lower power consumption, and greater transistor density, aligning with the industry's move from FinFET to GAA technology.

Today GAA transistors are currently in mass production only by Samsung, which offered the technology to customers with its 3-nanometer process in 2022. Intel is set to follow, producing GAAFET on its 2-nanometer process expected to be available in its products later this year. TSMC, the market leader, plans to introduce GAAFET with its own 2 nm process in 2025. The GAAFET technology itself is not inherently suited for AI or military applications but represents an evolution in transistor design, enabling denser packing of transistors as lithography equipment and manufacturing processes advance. This technology shift, akin to transitioning to a new node, typically results in either reduced power consumption or improved performance by 15-25%.

The improvements facilitated by GAAFET could significantly enhance the capabilities available to China. SMIC, China's largest contract manufacturer, currently produces chips on a 7 nm process and is believed to be capable of reaching at least 5 nanometers with existing tools. The combination of this process with GAAFET could theoretically prevent China from falling too far behind Western advancements. However, China has been effectively shut out from developing GAAFET using tools from leading EDA companies, all of which are American. Additionally, the Dutch company ASML, dominant in the lithography equipment market, has not sold its EUV (Extreme Ultraviolet) machines to China and faced further restrictions in 2023 on selling its advanced DUV (Deep Ultraviolet) equipment. In April 2024, ASML took another step in the tech war against China by announcing that it would no longer service existing equipment in China, potentially crippling the country's semiconductor manufacturing capabilities. The specific details of the new export bans are still unclear, but Reuters notes that initial proposals have faced criticism from the U.S. semiconductor industry for being overly broad and extensive.

Source: USA överväger ytterligare GAAFET-sanktioner mot Kina – Semi14, www.ASM.com, Applied Materials Outlines Next-Gen Tools for 3nm and GAA Transistor Era (anandtech.com), Atomic layer deposition, next-gen transistors, and ASM (techfund.one)

ASML Unveils Hyper-NA EUV: Pioneering New Frontiers in Chip Innovation and Efficiency

ASML, the leader in lithography technology for semiconductor manufacturing, has launched its latest breakthrough: the Hyper-NA EUV tool and Intel being the first customer getting its first machine earlier this year. This leading-edge technology, which boosts the numerical aperture (NA) from 0.55 to 0.75, is poised to revolutionize chip design by enabling unprecedented levels of transistor density. Scheduled for introduction around 2030, Hyper-NA promises to extend the capabilities of chipmakers far beyond current limits, opening up new possibilities for intricate and powerful chip designs.

The presentation announcing ASML's Hyper-NA EUV technology was delivered by the company's former president, Martin van den Brink, at imec's ITF World event in Antwerp. 

Reduction in Double Patterning Complexity: Hyper-NA EUV technology simplifies the lithography process by reducing the need for double patterning, i.e., like Litho-Etch-Litho-Etch (LELE) etc., a method that involves aligning two masks perfectly to create intricate chip designs. By providing higher resolution and precision, Hyper-NA EUV minimizes the challenges and costs associated with double patterning, streamlining production and enhancing overall efficiency for chipmakers. However, there are a myriad of multi-patterning technologies deployed out there and SMIC, the main Chinese foundry, is reportedly using sextuple-patterning for its 5 nm technology.

Hyper-NA EUV technology is designed to significantly increase the productivity of semiconductor manufacturing, enabling the processing of 400 to 500 wafers per hour. This improvement will help chipmakers meet the growing demand for high-performance chips more efficiently, reducing production time and costs while maintaining high precision and quality.

The adoption of Hyper-NA EUV presents a myriad of opportunities for the semiconductor industry. As Intel has already installed the first High-NA systems, showcasing the potential of these advanced tools to enhance processor performance. As other industry leaders like TSMC, Samsung, Micron, and SK Hynix explore the adoption of High-NA and eventually Hyper-NA, the competitive landscape is set for a dynamic transformation. Innovations such as advanced polarizers to overcome light polarization issues and improvements in resist materials and etch selectivity will enable more precise and efficient chip manufacturing.

ASML’s Hyper-NA EUV technology is not just a short-term solution but part of a long-term roadmap that will sustain chip innovation for the next decade and beyond. Collaborative research and development efforts, including Imec’s simulations and Zeiss’s lens designs, highlight the cooperative spirit driving this technological advancement. As chip designers like Nvidia, Apple, and AMD leverage these tools at leading foundries such as TSMC, the future of chip design looks brighter than ever, promising enhanced productivity, technological leadership, and sustained growth. Hyper-NA EUV is set to redefine what is possible in the world of semiconductors, driving the industry towards new heights of efficiency and performance.

Sources: ASML Aims for Hyper-NA EUV, Shrinking Chip Limits - EE Times

Air Liquide signed major contract to support the semiconductor industry in the U.S. with an investment of more than 250 million dollars

Air Liquide has announced a significant investment exceeding $250 million to construct a new industrial gas production facility in Idaho, USA. This plant will supply ultra-pure nitrogen and other essential gases to Micron Technology, Inc., a leading semiconductor manufacturer, as well as other local customers. The facility, part of a long-term contract, will play a crucial role in the production of memory chips and is expected to be operational by the end of 2025. This project will generate hundreds of jobs during both the construction and operational phases and is designed to be highly efficient, incorporating digital technologies and modularization to ensure reliability and quick delivery.

Matthieu Giard, Chief Executive Officer of Americas for the Air Liquide Group, said

We are pleased to further strengthen our 30 year-long partnership with Micron Technology. Our partner’s trust in Air Liquide reinforces our position in the Electronics industry as a technology leader with strong innovation capabilities. This investment will support the production of leading-edge memory chips, notably to meet the growing demand for computing capacities required by Artificial Intelligence. This contract illustrates our strategy to further accompany our customers in their development, including in the U.S. The Electronics activity is a strong driver of our 2025 strategic plan ADVANCE, which closely links financial and extra-financial performances.

This initiative exemplifies Air Liquide's commitment to technological advancement and environmental sustainability in the semiconductor sector. The new production unit will be 5% more power-efficient than previous generations and aims to use 100% renewable energy within five years. Matthieu Giard, CEO of Americas for Air Liquide, highlighted the long-standing partnership with Micron Technology and the strategic importance of this investment in supporting the demand for advanced memory chips, driven by the rise of artificial intelligence. Scott Gatzemeier of Micron Technology emphasized the project’s role in enhancing the U.S. semiconductor supply chain, driving significant growth in domestic material sourcing, and bolstering the semiconductor ecosystem across the country.

Source: Air Liquide signed major contract to support the semiconductor industry in the U.S. with an investment of more than 250 million dollars | Air Liquide

NCD Co., Ltd. has supplied ALD equipment for manufacturing perovskite solar cells to Korea Electric Power Corporation

NCD Co., Ltd. has recently supplied KEPCO Research Institute (KEPRI) with its dedicated ALD equipment (Lucida GS-P360) for perovskite solar cells (PSCs). This is equipment for depositing SnO2 thin films, which plays a role as the electron transport layer (ETL) in high-efficiency PSCs. The Lucida GS-P360 enhances high productivity as it can simultaneously processes ALD on multiple glass substrates, making it suitable for mass production.

SnO2 layers deposited via the ALD process allows for the uniform thin film deposition on the nanometer scale, offering higher light transmittance in the visible spectrum compared to TiO2. Additionally, SnO2 exhibits high conductivity and excellent stability. PSCs are gaining great attention as next-generation solar cells due to their simplicity in fabrication, efficiency, and cost-effectiveness. KEPRI has focused on PSC research and achieved an efficiency of 19.8% on 50x50 mm² glass substrates. They are targeting commercialization with 150x150 mm² glass substrate modules, achieving 18% efficiency, and are developing a 20 kW-class building-integrated photovoltaic (BIPV) system for demonstration, anticipating full-scale commercialization within a few years.

Although ALD processes generally offer advantages such as low-temperature processing, superior thin film quality, process reliability, and scalability, the slow deposition rate can significantly increase production costs. However, NCD's ALD equipment for PSCs employs NCD's proprietary high-productivity ALD technology, enabling the processing of SnO2 on 180x180 mm² glass substrates, achieving an outstanding throughput of over 100 glasses per hour, even with the use of high-temperature Sn precursors that are typically challenging to handle.

Moreover, the supplied equipment is capable of handling large-area glass substrates (360x360 mm²), facilitating the manufacture of large-area BIPV PSCs. Specifically, for BIPV applications, because glass substrates thicker than 2 mm are used, the heating of the glass substrates for the ALD process can be time-consuming, limiting productivity. However, NCD's Lucida GS-P360, equipped with a proprietary heating system (patent pending), significantly reduces the time required for heating thick glass substrates, thereby ensuring high productivity.

NCD Co., Ltd. is expected to lead the high-productivity ALD technology and equipment market for PSC manufacturing and will continue to strive to grow as the world's leading ALD company.

< Lucida GS-P360 >

About NCD Co., Ltd:

NCD Co., Ltd. is a rapidly growing Korean company specializing in the development and manufacturing of ALD (Atomic Layer Deposition) and CVD (Chemical Vapor Deposition) equipment. Founded in 2010 and based in Daejeon, NCD focuses on providing advanced equipment, process development, coating services, and consulting for industries such as solar cells and OLED displays. Their innovative solutions aim to enhance efficiency and productivity in high-volume manufacturing.

For more information, visit their official website: NCD Tech.