TSMC's 22ULL ReRAM with Ruthenium Layer Challenges Fujitsu's TaO-Based Technology with an Iridium layer in Embedded Memory Race

Techinsights reports (link below) that TSMC and Fujitsu are leading the charge in embedded ReRAM technology, with TSMC's new 22ULL eReRAM introducing a significant challenge to Fujitsu's established 40 nm TaO-based eReRAM. Both companies employ different resistive materials—Fujitsu uses a tantalum oxide (TaO) layer enhanced with an iridium layer, while TSMC incorporates a hafnium oxide (HfO) layer, paired with a ruthenium (Ru) layer, which enhances performance and reliability. TSMC's 22ULL platform, featuring this advanced HfO and Ru-based ReRAM, is set to challenge Fujitsu's position, especially in critical applications like automotive and IoT, where efficiency and capacity are paramount. With TSMC offering both eMRAM and eReRAM solutions, the competition between these technologies will significantly influence the future of embedded memory devices.

Other materials with similar resistive switching properties include: titanium oxide (TiOx), nickel oxide (NiO), zinc oxide (ZnO), zinc titanate (Zn2TiO4), Manganese oxide (MnOx), magnesium oxide (MgO), aluminum oxide (AlOx), and zirconium dioxide (ZrO2).

Screendumps from Techinsights website, Top an overview table and below TSMC resp. Fujitsu 28 nm ReRAM.

Sources:

TSMC vs. Fujitsu: A Brief Comparison of 22ULL Embedded ReRAM Technologies | TechInsights