BALD Engineering - Born in Finland, Born to ALD
Thursday, May 18, 2023
ALD/CVD Precursors – Better Times Ahead
Friday, May 12, 2023
Assessing the Environmental Impact of Atomic Layer Deposition (ALD) Processes and Pathways to Lower It
Assessing the Environmental Impact of Atomic Layer Deposition (ALD) Processes and Pathways to Lower It
Publication Date:April 27, 2023
https://doi.org/10.1021/acsmaterialsau.3c00002
- The thorough optimization of the processing parameters and the reactor design and its infrastructure would drastically lower the undesired wastes and emissions. Computational simulations, machine learning, and artificial intelligence can, for example, be applied to optimize ALD processes faster than ever, as the saturation times can be precisely predicted using these innovative tools.
- High throughput processes such as SALD applied at atmospheric pressure could lead to depositions that are orders of magnitude faster and lower the overall energy budget and related emissions.
- The chemical design of greener precursors would have the largest impact as it could reduce the overall environmental impact: from the raw material extracted and the (limited) number of greener chemistry synthetic steps resulting in the precursor molecules to the thermal budget related to the deposition temperature, and to the emissions of less polluting byproducts.
Friday, May 5, 2023
INFICON xParts ALD Coatings using Picosun P1000
Wednesday, May 3, 2023
AVS ALD2023 & ALE2023 Late News Abstracts Due May 5 - May The 4th Be With You!
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Forge Nano Partners with Aleon Renewable Metals for Battery Recycling and Supply of ALD Materials for EV Batteries
Tuesday, May 2, 2023
TechInsights found Samsung DRAM chips in Samsung Galaxy S23 with Five EUV mask layers
TechInsights found Samsung DRAM chips in Samsung Galaxy S23 with Five EUV mask layers. These are from DRAM wafers produced in the so-called D1a node (or D1α, α as in alpha)
👉https://t.co/oSv4yiHJiB
— TechInsights (@techinsightsinc) May 1, 2023
Get your products to market faster: @TechInsightsinc found next-gen #DRAM found in the #GalaxyS23. @Samsung is the first company to apply five #EUV lithography masks on DRAM D1a, the first node to fully adopt EUVL for #DRAM. Learn more. #semiconductor pic.twitter.com/2Pqg7gKuE9
This is in line with a previous press release from Samsung (2020) so no real surprise here: Samsung Announces Industry’s First EUV DRAM with Shipment of First Million Modules – Samsung Global Newsroom
"EUV to be fully deployed from 4th-gen 10nm-class DRAM (D1a) next year"
EUV will be fully deployed in Samsung’s future generations of DRAM, starting with its fourth-generation 10nm-class (D1a) or the highly-advanced 14nm-class, DRAM. Samsung expects to begin volume production of D1a-based DDR5 and LPDDR5 next year, which would double manufacturing productivity of the 12-inch D1x wafers.
Global Semiconductor Sales Decrease 8.7% in First Quarter; March Sales Tick Up Month-to-Month for First Time Since May 2022
Semiconductor sales continued to slip during the first quarter of 2023 due to market cyclicality and macroeconomic headwinds, but month-to-month sales were up in March for the first time in nearly a year, providing optimism for a rebound in the months ahead.
Monday, April 24, 2023
Oxford Instruments to supply KAUST with hardware upgrades and ALE systems
Significant partnership with KAUST: hardware upgrade and support its cutting-edge ALD research with the addition of ALE capability
Wednesday, April 19, 2023
Call for Papers on ALD & ALE Applications, at ECS Fall Meeting / Gothenburg Oct. 2023 ►►DEADLINE EXPIRES APRIL 21◄◄
The Electrochemical Society (ECS) conference is an international event running every spring and fall, and gathering 2000-4000 participants and 30-40 exhibitors both from academia and industry.
The conference has a strong focus on emerging technology and applications in both electrochemistry and solid-state science & technology.
This fall the event will be held as 244th ECS Meeting on Oct. 8-12, 2023 in Gothenburg (Sweden).
The full program as well as information on travel assistance for students can be found on https://www.electrochem.org/
The organizers of symposium G01 on “Atomic Layer Deposition & Etching Applications, 19” encourage you to submit your abstracts on the following (and closely related) topics:
1. Semiconductor CMOS applications: development and integration of ALD high-k oxides and metal electrodes with conventional and high-mobility channel materials;
2. Volatile and non-volatile memory applications: extendibility, Flash, MIM, MIS, RF capacitors, etc.;
3. Interconnects and contacts: integration of ALD films with Cu and low-k materials;
4. Fundamentals of ALD processing: reaction mechanisms, in-situ measurement, modeling, theory;
5. New precursors and delivery systems;
6. Optical and photonic applications;
7. Coating of nanoporous materials by ALD;
8. MLD and hybrid ALD/MLD;
9. ALD for energy conversion applications such as fuel cells, photovoltaics, etc.;
10. ALD for energy storage applications;
11. Productivity enhancement, scale-up and commercialization of ALD equipment and processes for rigid and flexible substrates, including roll-to-roll deposition;
12. Area-selective ALD;
13. Atomic Layer Etching (‘reverse ALD’) and related topics aiming at self-limited etching, such as atomic layer cleaning, etc.
Abstract submission
Meeting abstracts should be submitted not later than the deadline of April 21, 2023 via the ECS website: Abstract submission instruction
List of invited speakers
· Johan Swerts, (Imec, Belgium) KEYNOTE: ALD challenges and opportunities in the light of future trends in electronics
· Stephan Wege (Plasway Technology, Germany), Reactor design for combined ALD & ALE
· Masanobu Honda (TEL, Japan), Novel surface reactions in low-temperature plasma etching
· Barbara Hughes, (Forge Nano, USA), Dual Coatings, Triple the Benefit; Atomic Armor for Better Battery Performance
· Juhani Taskinen, (Applied Materials-Picosun, Finland), ALD for biomedicine
· Alex Kozen (Univ. of Maryland, USA), ALD for improved Lithium Ion Batteries
· Malachi Noked (Bar-Ilan Univ., Israel), ALD/MLD for batteries
· Yong Qin (Chinese Academy of Sciences), ALD for catalysis
· Jan Macák, (Univ. of Pardubice, Czechia), ALD on nanotubular materials and applications
· Bora Karasulu, Univ. of Warwick, UK), Atomistic Insights into Continuous and Area-Selective ALD Processes: First-principles Simulations of the Underpinning Surface Chemistry
· Ageeth Bol (Univ. Michigan, USA), ALD on 2D materials
· Pieter-Jan Wyndaele (KU Leuven-imec, Belgium), Enabling high-quality dielectric passivation on Monolayer WS2 using a sacrificial Graphene Oxide template
· Elton Graugnard (Boise State Univ., USA), Atomic Layer Processing of MoS2
· Han-Bo-Ram Lee (Incheon National Univ., Korea), Area-Selective Deposition using Homometallic Precursor Inhibitors
· Ralf Tonner (Univ. Leipzig, Germany), Ab initio approaches to area-selective deposition
· Nick Chittock (TU Eindhoven, Netherlands), Utilizing plasmas for isotropic Atomic Layer Etching
· Heeyeop Chae (Sungkyunkwan Univ., Korea), Plasma-enhanced Atomic Layer Etching for Metals and Dielectric Materials
· Charles Winter (Wayne State Univ., USA), New Precursors and Processes for the Thermal ALD of Metal Thin Films
· Anjana Devi, Ruhr Univ. Bochum, Germany), Novel precursors dedicated for Atomic Layer Processing
Visa and travel
For more information, see: www.electrochem.org/244/visa-
In addition, Mrs. Francesca Spagnuolo at the ECS (Francesca.Spagnuolo@
We are looking forward to meeting you in Gothenburg !