Tuesday, January 28, 2020

ATLANT3D demonstrate high precision ALD printing

ATLANT3D report that they have completed successfully testing of their atomic printing system and could print first simple geometries and patterns. ATLANT3D technology relies on selective area direct atomic layer deposition process and enables direct pattern generation with atomic precision at 20 nm and 100-400 micrometer lateral resolution. 

Next chance to meet ATLANT3D will be at EFDS ALD for Industry 2020 in Freiburg April 1, 2020 (LINK) where CEO & Founder Dr. Maksym Plakhotnyuk will present "Direct atomic pattern printing"


ATLANT3D web: LINK

Intermolecular use the VTT PillarHall(R) ALD high-aspect ratio test chip

Intermolecular (now part of the Performance Materials business unit at Merck) reports that using a platform developed by VTT Technical Research Centre of Finland, it has developed a simpler screening method for looking at the properties of films deposited into high aspect-ratio structures.

The VTT PillarHall® chip consists of membranes suspended above a silicon substrate and supported by nanoscale pillars, which can also be described as horizontal trenches.



The advantage of using this type of structure is that instead of needing cross-sections, simple planar metrology techniques can be used, and sample preparation is as easy as “dep, stick, rip!” The film is deposited on the trenches by ALD, a piece of sticky tape is attached to the sample and peeled off, and then any standard planar metrology technique can be used, for example, optical microscopy or SEM/EDX. (Credit :Intermolecular/VTT PillarHall® )

Fulla article: Intermolecular "ALD in Confined Spaces" LINK

Saturday, January 25, 2020

Chlorine-free titanium ALD precursor for leading edge semiconductor applications


Strem´s TDMAT ALD precursor as an attractive alternative to TiCl4

Atomic layer deposition (ALD) of titanium-based compounds has been a crucial process step in the modern semiconductor industry. Titanium nitride (TiN), due to its high electrical conductivity, has been in use as an inorganic anti-reflective coating for lithography, hard-mask for low-κ patterning, transistor gate electrodes, and diffusion barrier for tungsten contacts and Cu interconnects. Intel, in its 10nm, 3rd generation FinFET based technology node, employs a conformal Ti layer to wrap around source/drain diffusion regions to lower the spreading resistance (Link). Apple’s A11 bionic processor chip based on TSMC’s 10nm technology and Samsung’s Exynos 8895 processor chip based on its 10nm technology also incorporates Ti-based liners for tungsten contacts (Link). Globalfoundries and IBM Research investigated cobalt as a replacement of tungsten in the contacts for advanced semiconductor chips, and this process also incorporated a TiN barrier and a Ti liner (Link). TiN electrodes have also been promising for ferroelectric memory applications.


Figure 1:  Cross-section, perpendicular to the fin direction, TEM images on the 6T-SRAM area for (a) A11 and (b) Exynos8895. Images (c) and (d) are corresponding EDS mappings of (a) and (b), respectively. (Picture credit: MSSCORPS CO., LTD.)


Titanium dioxide (TiO2) is also an attractive candidate for several thin-film applications, such as high-k material for electronic devices, anti-reflection optical coatings, biocompatible coatings, photocatalysis, and solar cells. Besides, TiO2 is also a constituent of several crucial multi-metal oxide systems, such as strontium titanates (STOs), barium strontium titanates (BSTs), and lead zirconium titanates (PZTs), for dielectric and ferroelectric applications.

The TiCl4 precursor has been widely used to deposit Ti-based thin-films. However, due to severe Cl contamination, low growth per cycle, the corrosive nature of the reaction by-product (mainly HCl), high process temperature, and lower reactivity of TiCl4, the industry switch over to metal-organic precursors is swiftly gaining traction.

Strem Chemicals, Inc., a leading fine chemicals supplier, headquartered in Newburyport, Massachusetts, USA, boasts a vast variety of metal-organic precursors for depositing superior Ti-based thin-films in semiconductor as well as non-semiconductor applications. TDMAT [tetrakis(dimethylamino)titanium(IV)] (Product Catalog Number: 93-2240, CAS Number: 3275-24-9) is one of the most preferred high-purity metal-organic precursors in Strem’s chemical offering. Highly volatile and reactive TDMAT offers adequate vapor pressure even at room temperature and enables low temperature (< 140°C) deposition of high-quality Ti-based thin-films.


Figure 2: TDMAT molecule
 
Since 1964, Strem Chemicals, Inc. has been serving its clients from academic, industrial and government research and development laboratories as well as commercial scale businesses in the pharmaceutical, microelectronic and chemical/petrochemical industries. Strem also provides custom synthesis (including high-pressure synthesis) and current good manufacturing practice (cGMP) services. With ISO 9001 certification for Quality Management System (QMS) standard and documentation, most of Strem’s products are of reliable high purity, typically 99%, with some at 99.9999% metals purity. Strem utilizes a comprehensive range of analytical techniques tailored to each product to ensure quality because the researchers typically rely on the supplier's quality procedures and documentation, which may be detrimental to a great research idea if poorly conducted. All of Strem's catalogs, since inception, have listed “Color and Form” for every product as primary indicators of quality.

More than fifty years of experience in manufacturing inorganic and organometallic chemicals has enabled Stem to expand its product offering of MOCVD, CVD, and ALD precursors. They are continually adding new products for this dynamic and exciting field. Strem’s product range includes:



Product mentioned in this blog:
93-2240: Tetrakis(dimethylamino)titanium(IV), 99% TDMAT (3275-24-9)

Related Product Lines & Resources:
CVD & ALD Precursors
MOCVD, CVD & ALD Precursors Booklet
See full Material Science product line
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Researched, produced & written by BALD Engineering AB, Stockholm, 2020-01-25
Abhishekkumar Thakur, Jonas Sundqvist
www.baldengineering.com