New Method for Precision Doping in 2D Semiconductors Enables Next-Gen CMOS Integration

Researchers have achieved a breakthrough in doping two-dimensional (2D) semiconductors, paving the way for monolithic integration of p-type and n-type semiconductor channels on a single chip. This development holds promise for advancing complementary CMOS technology, allowing further transistor scaling and efficient interlayer connections.

The study focuses on 2H-MoTe2, a van der Waals material, and employs a precise substitutional doping technique. Unlike conventional methods such as ion implantation—which do not work well with 2D materials—this approach allows the targeted introduction of niobium (Nb) for p-type doping and rhenium (Re) for n-type doping, using a magnetron co-sputtering method followed by chemical vapor deposition (CVD). By precisely adjusting the concentration of these dopants, researchers produced wafer-scale films with consistent carrier properties, even enabling spatial control of the doped regions. This advance allows for the patterning of p-type and n-type channels on the same wafer in a single growth process, which is essential for CMOS device fabrication.

Using this novel technique, the team created a large-scale 2D CMOS inverter array that achieved impressive performance metrics. For instance, a typical inverter from this array demonstrated a voltage gain of 38.2 and low static power consumption, key parameters for efficient CMOS operation. The new doping method also exhibits high uniformity and reliability, essential for scaling up 2D materials in commercial semiconductor applications.

This innovation in 2D semiconductor doping introduces a promising pathway for integrating materials like 2H-MoTe2 into very-large-scale integration (VLSI) technology, further driving forward Moore's Law and the miniaturization of semiconductor devices.

Figure 1 from paper, Pan, Y., Jian, T., Gu, P. et al. Precise p-type and n-type doping of two-dimensional semiconductors for monolithic integrated circuits. Nat Commun 15, 9631 (2024). https://doi.org/10.1038/s41467-024-54050-2

Experimental

In the study, co-sputtering and CVD is used to create large-scale, precisely doped 2D 2H-MoTe2 films by transforming a molybdenum film doped with niobium or rhenium into 2H-MoTe2 through a process called tellurization. Here’s a breakdown of how this process works:

Preparation of the Mo Film: Initially, thin Mo films are deposited on a silicon/silicon dioxide (Si/SiO2) substrate using magnetron co-sputtering. During this step, controlled amounts of Nb (for p-type doping) or Re (for n-type doping) are co-sputtered with the Mo film, resulting in a doped Mo layer.

Tellurization Process in the CVD Reactor: The Mo film, now doped with Nb or Re, is placed in a CVD furnace along with solid tellurium (Te) lumps. Under a controlled flow of carrier gases (argon and hydrogen), the CVD chamber is heated to high temperatures (around 650°C). The Te vapor reacts with the Mo, leading to the formation of 1T'-MoTe2.

Phase Transformation to 2H-MoTe2: At the elevated temperatures within the CVD system, the 1T'-MoTe2 structure undergoes a phase transformation into the more stable 2H phase, producing the final doped 2H-MoTe2 film. This phase is crucial because 2H-MoTe2 has semiconducting properties suitable for integrated circuits.

Doping Incorporation: During the CVD tellurization, Nb and Re atoms from the initial Mo film become substitutionally incorporated into the MoTe2 lattice. This incorporation determines the semiconductor type (p-type or n-type) and carrier concentration of the resulting 2H-MoTe2 film.

Large-Scale Uniformity: By controlling the initial dopant concentration and maintaining consistent conditions in the CVD process, the researchers achieved uniform doping across large-scale wafers, crucial for creating reliable semiconductor devices.

Source: Precise p-type and n-type doping of two-dimensional semiconductors for monolithic integrated circuits | Nature Communications

Lam Research Sees Growth Opportunities in Etch and Deposition Technologies Despite NAND Downturn

In its Q1 2025 earnings call, Lam Research reported strong performance and emphasized growth opportunities, particularly in etch and deposition technology. CEO Tim Archer highlighted optimism for NAND spending recovery in 2025, supported by technology upgrades and a transition to molybdenum through Lam’s advanced Atomic Layer Deposition (ALD). Lam is positioned to capture opportunities in advanced semiconductor nodes like gate-all-around and EUV patterning, while its expanded offerings in high-bandwidth memory (HBM) and advanced packaging align with growing demand in AI and high-performance computing. Despite regulatory challenges in China, Lam continues to serve this market by focusing on upgrades and services. Looking ahead, Lam expects to outpace industry growth, driven by its strategic positioning across advanced technologies.

In its Q1 2025 earnings call, Lam Research Corporation (NASDAQ: LRCX) reported solid performance and reiterated optimism for growth in 2025, largely driven by demand for etch and deposition technologies. CEO Tim Archer emphasized Lam’s strategic positioning in an industry experiencing technological shifts, despite a prolonged downturn in NAND spending.

Lam anticipates a recovery in NAND spending in 2025, largely driven by technology upgrades rather than new capacity expansions. Key factors include a transition from tungsten to molybdenum in NAND structures, which improves performance by reducing resistivity. Lam is well-positioned in this area due to its extensive installed base and production wins, projecting an advantageous position as these upgrades scale into 2025.

NAND Technology Upgrades Set to Drive Etch and Deposition Demand in 2025

While the NAND segment has been in a prolonged downturn, Lam anticipates a recovery in 2025 as manufacturers upgrade to advanced nodes. The push toward 3D NAND layers exceeding 200 is essential to meet the growing demand for high-speed, high-capacity storage in data centers and client devices. Currently, about two-thirds of NAND capacity remains at older technology nodes, highlighting significant room for technology upgrades. Lam’s extensive installed base of NAND equipment positions it well to benefit as customers look to improve efficiency and performance.

Furthermore, Archer highlighted a shift from tungsten to molybdenum as a key materials change in NAND, addressing word line resistance challenges. This transition is particularly favorable for Lam, as it has already secured production wins in molybdenum deposition, which will scale up throughout 2025. These advancements are expected to enhance Lam's leadership position in NAND technology transitions.

Lam's product offerings mentioned in the reporting, along with their primary applications and strategic impacts.

Advanced Logic and Foundry Nodes: Key Growth Segments for Lam

Lam is also poised to benefit from shifts in advanced logic and foundry nodes, which are increasingly adopting gate-all-around architectures, backside power distribution, and advanced EUV patterning. These cutting-edge technologies require more intensive use of etch and deposition processes, aligning with Lam’s expertise and product offerings.

Archer noted the company's recent wins in selective etch tools and other innovations that support these advanced nodes, positioning Lam favorably as customers transition to architectures with greater power and performance needs. This expanding demand from foundry and logic customers offers a substantial growth opportunity for Lam’s advanced etch and deposition technologies.

Advanced Packaging Driven by AI Fuels Revenue Growth

The AI and high-performance computing boom has intensified demand for advanced packaging, particularly for high-bandwidth memory (HBM). Lam’s copper plating technology, SABRE 3D, has experienced substantial adoption, doubling its market share this year. This growth has been fueled by the rising complexity of 2.5D and 3D packages, which require high-performance interconnections to support AI-driven systems.

Lam anticipates this trend will continue into 2025 as the industry moves toward more advanced and intricate packaging solutions. According to Archer, advanced packaging will play a critical role in the semiconductor ecosystem for the foreseeable future, and Lam’s early investment in this technology has positioned it for continued market share gains.

Supporting Installed Base and Productivity in Memory Markets

Lam’s Customer Support Business Group (CSBG) has also shown growth, focusing on productivity enhancements and tool reuse. With Lam’s extensive tool installations in both DRAM and NAND, customers are prioritizing upgrades over entirely new systems, especially as they look to improve cost efficiency during NAND’s down cycle. This focus on tool reuse has led to recent market share gains for Lam, as existing tools are upgraded for better value than new installations.

As DRAM and NAND customers intensify efforts to reduce costs, Lam’s service-oriented model and productivity solutions, including equipment intelligence services, have seen greater adoption. This trend underscores Lam's ability to support its customers' evolving needs in an era of increased etch and deposition intensity.

Lam Research Leverages ALD for Moly Transition in NAND, Driving Next-Gen Semiconductor Performance

Lam Research's perspective on ALD is optimistic, particularly as it becomes increasingly essential in NAND technology upgrades. The company highlighted the industry's ongoing shift from tungsten to molybdenum (moly) for improved resistivity in 3D NAND structures, a transition that Lam’s ALD technology is well-positioned to support. Lam has already secured production wins for ALD applications with molybdenum, expected to ramp up significantly in 2025. This capability extends beyond NAND, with potential applications in DRAM and advanced logic/foundry nodes, underscoring ALD’s growing importance in meeting next-generation semiconductor demands.

Lam Research Adapts to Regulatory Challenges as China Revenue Set to Decline in 2025

In its Q1 2025 earnings presentation, Lam Research highlighted key developments and expectations for the China market. China accounted for roughly 37% of Lam's revenue in the September quarter, but the company anticipates this share will decrease to around 30% by December and potentially decline further in 2025. This projected downturn reflects both anticipated shifts in demand and the impact of U.S. export restrictions on advanced semiconductor equipment sales to China. Lam acknowledged the challenges posed by ongoing and potential new U.S. export controls, which could limit its ability to sell to certain advanced technology segments in China. Nevertheless, Lam remains committed to supporting its domestic Chinese customers within the boundaries of regulatory compliance, expecting demand in restricted segments to normalize as global WFE (wafer fabrication equipment) spending adjusts.

Much of Lam's business in China now focuses on servicing domestic fabs with tools for trailing-edge and specialty node processes, areas that generally remain unaffected by export controls. Through its Reliant product line, Lam continues to support these nodes, emphasizing upgrades and maintenance services as primary offerings in a market constrained by new advanced technology sales. Despite potential reductions in advanced equipment sales, the company is confident that its service and support model will help stabilize revenue in the region. By prioritizing productivity solutions and customer support, Lam is adapting to a complex regulatory environment while anticipating that China’s share of its revenue will gradually normalize amid a broader decline in WFE spending in the country.

Strategic Positioning in 2025 and Beyond

In summary, Lam Research is set to capitalize on a growing demand for etch and deposition technology driven by the industry’s shift to advanced architectures. Archer concluded the call with optimism, stating that the company is well-positioned to capture market share as the semiconductor industry increasingly relies on complex, three-dimensional structures. With its advanced product offerings, Lam expects to outperform overall wafer fabrication equipment (WFE) growth in 2025, strengthening its leadership across multiple semiconductor sectors.

JSR Corporation Completes Strategic Acquisition of Yamanaka Hutech Corporation to Bolster Semiconductor Materials Portfolio with CVD and ALD Precursors

On August 2, 2024, JSR Corporation announced the successful acquisition of Yamanaka Hutech Corporation, a renowned supplier of high-purity chemicals for the semiconductor industry. The acquisition, finalized on August 1, 2024, positions YHC as a wholly-owned subsidiary of JSR. This strategic move allows JSR to enhance its product offerings, particularly in semiconductor film-forming technologies, and aligns with its growth strategy aimed at strengthening its presence in the advanced semiconductor materials sector. JSR is committed to driving innovation, optimizing supply chains, and maintaining strong customer relationships as the semiconductor industry undergoes significant changes.

JSR Corporation's acquisition of Yamanaka Hutech Corporation (YHC) brings YHC's high-purity CVD and ALD precursors into JSR's portfolio, enhancing its capabilities in semiconductor materials. YHC, with over 60 years of expertise in advanced molecular design and synthesis technology, has a strong track record in supplying high-quality CVD/ALD precursors, particularly in competitive ALD material areas. This acquisition allows JSR to diversify beyond its traditional focus on photoresists and strengthens its position as a global leader in advanced semiconductor materials, poised to drive innovation in both miniaturization and device structure advancements.

Sources:

JSR Completes Acquisition of All Shares in Yamanaka Hutech ~ Accelerating Semiconductor Materials Industry Reorganization~ | 2024 | News | JSR Corporation

JSR to make Yamanaka Hutech, a high-purity chemical for semiconductors, a wholly owned subsidiary ~Expanding the product portfolio in the field of cutting-edge semiconductor deposition~ | 2024 | News | JSR Corporation

Applied Materials Pioneer® CVD film for EUV Sculpta and DRAM Sym3 Etch applications

Applied Materials continues to lead in semiconductor technology with its introduction of the Producer® XP Pioneer® CVD patterning film at the SPIE Advanced Lithography + Patterning conference. This latest innovation is critical for DRAM scaling and EUV lithography, offering improved etch selectivity and pattern fidelity due to enhanced film density and stiffness. Optimized for use with the Sculpta® pattern-shaping system, Pioneer allows for advanced patterning capabilities, crucial for maintaining precise feature dimensions. With its adoption by leading foundry-logic and memory manufacturers, the Pioneer system is set to significantly enhance Applied Materials' portfolio and revenue, affirming its leadership in CVD technologies.

Applied Materials' Draco™ hard mask and Sym3® Y HT etch system have revolutionized DRAM production by enabling the etching of perfectly cylindrical capacitor holes, significantly enhancing etch selectivity and improving critical dimension uniformity, which contributes to a notable increase in the company's market share in DRAM.

Demand for DRAM innovation continues to grow to feed the insatiable need for memory bandwidth in the AI era. The recently launched Pioneer CVD patterning film has already been adopted by leading memory manufacturers for DRAM patterning. Pioneer is a completely new CVD architecture based on a unique high-density carbon formula that is more resilient to etch chemistries used in the most advanced process nodes, permitting thinner film stacks with superior sidewall feature uniformity.

A thinner hard mask means less vertical distance is required for etch, resulting in a lower aspect ratio. This allows use of lower-power plasma and offers better control of the ratio of ions to radicals. A higher concentration of ions produces more efficient etches with better control, allowing desired patterns to be transferred to the wafer with exceptional fidelity. Pioneer is also being co-optimized with Applied’s new Sym3® Y Magnum® etch system to provide better control over conventional carbon films for critical etch applications in memory processing.

For EUV Lithography the Pioneer CVD patterning film developed by Applied Materials addresses the stringent demands of EUV lithography by increasing film density and stiffness, which enhances etch selectivity and allows for finer pattern control, vital for the ultra-fine dimensions required in advanced chip manufacturing.

Source: Building on an Unmatched Foundation of CVD Innovation (appliedmaterials.com)

Applied Materials Unveils Cutting-Edge Patterning Technologies for Next-Gen Semiconductor Device Manufacturing

Applied Materials is leading the charge into the angstrom era of chipmaking, unveiling a suite of innovative solutions at the SPIE Advanced Lithography + Patterning conference. The company's focus is on overcoming the challenges posed by extreme ultraviolet (EUV) and high-NA EUV lithography, crucial for the production of chips at 2nm process nodes and below. Their approach integrates new materials engineering, metrology techniques, and pattern-shaping technology to enhance chip performance and yield.

To help overcome patterning challenges for leading-edge chips, Applied Materials offers a portfolio of technologies designed to complement the latest advances in lithography. The company’s newest innovations include the Producer® XP Pioneer® CVD patterning film, the Sym3® Y Magnum™ etch system, the Centura® Sculpta® pattern-shaping system and Aselta contour technology for design-based metrology.

Central to Applied Materials' advancements is the Sculpta® pattern-shaping technology, first introduced at the previous year's conference. Sculpta has seen growing adoption among top logic chipmakers for its ability to refine EUV patterning, notably reducing double patterning steps and mitigating defects such as bridge defects. This technology not only lowers patterning costs but also improves chip yields, showcasing its increasing importance in the semiconductor manufacturing landscape.

Over the next few years, chipmakers will be looking to create “angstrom era” chips that will use EUV and High-NA EUV lithography to pattern their smallest features. An entire ecosystem of capabilities will be required to enable this advanced patterning – including software and design tools, innovations in deposition and etch, advanced metrology and inspection systems, and entirely new approaches such as pattern shaping.

In response to the issue of EUV line edge roughness, Applied Materials has launched the Sym3® Y Magnum™ etch system. This innovative system employs a combination of deposition and etch processes within a single chamber to smooth out rough edges before etching, thereby enhancing yield and chip performance.

Additionally, the company introduced the Producer® XP Pioneer® CVD patterning film, designed for high-fidelity pattern transfer with enhanced resistance to etch chemistries. This film is especially significant for advanced process nodes, offering improved sidewall feature uniformity and co-optimization with both Sculpta and the Sym3 Y Magnum system for superior patterning capabilities.

To address the critical issue of feature alignment across chip layers, Applied Materials has acquired Aselta Nanographics, integrating its design-based metrology with Applied's leading eBeam systems. This integration enables a comprehensive metrology solution that significantly enhances feature placement accuracy, crucial for optimizing chip performance and yield.

Applied Materials' expansion of its patterning solutions portfolio underscores its commitment to advancing semiconductor technology. By addressing key challenges in EUV lithography and introducing groundbreaking technologies, the company is setting new standards for the industry, driving forward the capabilities of angstrom era chipmaking.

Source: Applied Materials Expands Patterning Solutions Portfolio for Angstrom Era Chipmaking | Applied Materials

Kokusai Electric's Successful IPO Raises $724.4 Million, Japan's Largest in 5 Years

Japanese chip equipment manufacturer Kokusai Electric has successfully raised $724.4 million through its initial public offering (IPO) by pricing its shares at the top end of a reduced marketing range. The IPO, Japan's largest in five years, saw Kokusai Electric value its shares at 1,840 yen per share, giving the company an overall valuation of 423.9 billion yen ($2.84 billion). The decision to lower the price range was influenced by the underwhelming performance of chip designer Arm's shares following its recent listing. Kokusai Electric's shares are set to debut on the Tokyo exchange's Prime Market on October 25. The company's major customers include Samsung Electronics, TSMC, and Micron Technology, accounting for over 40% of its revenue.

TSURUGI-C²® is a KOKUSAI ELECTRIC’s new thermal processing platform which is most recently developed for advanced devices especially for the ones with high aspect ratio 3D structures requiring high quality, uniform and conformal film deposition with new innovative reactor design and process techniques.

Kokusai Electric specializes in deposition and treatment process equipment for semiconductor manufacturing. Their deposition equipment is designed for creating nanoscale thin films on semiconductor wafers and supports technologies like LP-CVD, oxidation, annealing (low and high temperature), diffusion, and ALD. Notable products include TSURUGI-C², designed for advanced devices with complex 3D structures, AdvancedAce®-300 for batch thermal processing of 300mm wafers, and VERTRON® Revolution for 200-mm batch thermal processing.

Kokusai Electric's treatment equipment improves film properties through processes like nitridation, oxidation, curing, and annealing. MARORA® is ideal for gate dielectric film formation, utilizing plasma with low electron temperature. TANDUO® offers modular single-wafer treatment for various processes, and AdvancedAce®-300 supports LP-CVD, oxidation, annealing, and diffusion.

These equipment offerings are essential for semiconductor manufacturing, enabling the production of high-quality, high-performance components used in diverse electronic devices.

Sources:

Kokusai Electric raises $724.4 mln after setting IPO price at the top end of range | Reuters

Products＆Services | KOKUSAI ELECTRIC CORPORATION (kokusai-electric.com)

Aixtron’s G10-SiC CVD System Supports GlobiTech’s SiC Epitaxy Expansion

• GlobiTech Inc produces silicon carbide (SiC) and silicon epitaxial wafers, primarily focusing on serving the power and electric vehicle (EV) market segments.
• GlobiTech Inc's production facilities are located in Sherman, Texas, USA.

Aixtron SE is aiding Texas-based silicon-epitaxy foundry GlobiTech Inc's entry into the silicon carbide (SiC) epitaxy market. The G10-SiC chemical vapor deposition (CVD) system from Aixtron has enabled GlobiTech to rapidly scale SiC epitaxy production in response to growing demand for power epiwafers. Featuring dual wafer sizes (9x150mm and 6x200mm), it offers high throughput per fab space. GlobiTech's expansion confirms the trend of SiC replacing silicon in various applications. Both firms have enjoyed a fruitful partnership, with Aixtron's tools maximizing wafer output. The G10-SiC is projected to be Aixtron's top-selling product in 2023.

Aixtron G10-SiC (Source Aixtron.com)

Source: AIXTRON Pressemeldungen :: AIXTRON

Recent Blog posts on SiC:

BALD Engineering - Born in Finland, Born to ALD: SiC Market Soars Towards $9 Billion: EVs and High-Power Chargers Drive Growth

BALD Engineering - Born in Finland, Born to ALD: SiC Market Soars Towards $9 Billion: EVs and High-Power Chargers Drive Growth

BALD Engineering - Born in Finland, Born to ALD: Samco launches new ICP Tornado Plasma ALD system

BALD Engineering - Born in Finland, Born to ALD: ASM International has completed the acquisition of Italian Silicon Carbide Equipment Manufacturer LPE S.p.A.

BALD Engineering - Born in Finland, Born to ALD: Chemistry paves the way for improved electronic materials - LiU have developed a new molecule that can be used to create high-quality indium nitride

Background:

• Silicon carbide: from gold rush to commodity?¹, which provides an overview of the global SiC market and its predictions for the future of the technology. It discusses the growth rate, size, and drivers of the SiC device market, as well as the competitive landscape and supply chain of the SiC industry. It also analyzes the challenges and opportunities for SiC technology in different applications, such as automotive, industrial, energy, and telecommunications. It also compares and evaluates SiC with other wide bandgap materials, such as gallium nitride (GaN) and diamond.
• The 2023 global fab landscape: opportunities and obstacles², which considers the state of the global semiconductor fab market in a post-COVID world. It discusses the emerging business models that could enable the semiconductor industry to migrate to leading-edge and mature technology with optimal manufacturing capacity. It also examines the impact of COVID-19, trade wars, and geopolitical tensions on the semiconductor supply chain and fab investments. It also explores the trends and innovations in semiconductor materials, devices, and modules, such as silicon carbide (SiC), gallium nitride (GaN), and quantum computing.

Call for Papers on ALD & ALE Applications, at ECS Fall Meeting / Gothenburg Oct. 2023 ►►DEADLINE EXPIRES APRIL 21◄◄

Call for Papers on ALD & ALE Applications, at ECS Fall Meeting / Gothenburg Oct. 2023 ►►DEADLINE EXPIRES APRIL 21◄◄

The Electrochemical Society (ECS) conference is an international event running every spring and fall, and gathering 2000-4000 participants and 30-40 exhibitors both from academia and industry.

The conference has a strong focus on emerging technology and applications in both electrochemistry and solid-state science & technology.

This fall the event will be held as 244^th ECS Meeting on Oct. 8-12, 2023 in Gothenburg (Sweden).

The full program as well as information on travel assistance for students can be found on https://www.electrochem.org/244.

 

The organizers of symposium G01 on “Atomic Layer Deposition & Etching Applications, 19” encourage you to submit your abstracts on the following (and closely related) topics:

 

1.   Semiconductor CMOS applications: development and integration of ALD high-k oxides and metal electrodes with conventional and high-mobility channel materials;

2.   Volatile and non-volatile memory applications: extendibility, Flash, MIM, MIS, RF capacitors, etc.;

3.   Interconnects and contacts: integration of ALD films with Cu and low-k materials;

4.   Fundamentals of ALD processing: reaction mechanisms, in-situ measurement, modeling, theory;

5.   New precursors and delivery systems;

6.   Optical and photonic applications;

7.   Coating of nanoporous materials by ALD;

8.   MLD and hybrid ALD/MLD;

9.   ALD for energy conversion applications such as fuel cells, photovoltaics, etc.;

10. ALD for energy storage applications;

11. Productivity enhancement, scale-up and commercialization of ALD equipment and processes for rigid and flexible substrates, including roll-to-roll deposition;

12. Area-selective ALD;

13. Atomic Layer Etching (‘reverse ALD’) and related topics aiming at self-limited etching, such as atomic layer cleaning, etc.

 

Abstract submission

Meeting abstracts should be submitted not later than the deadline of April 21, 2023 via the ECS website: Abstract submission instruction

 

List of invited speakers

·   Johan Swerts, (Imec, Belgium) KEYNOTE: ALD challenges and opportunities in the light of future trends in electronics

·   Stephan Wege (Plasway Technology, Germany), Reactor design for combined ALD & ALE

·   Masanobu Honda (TEL, Japan), Novel surface reactions in low-temperature plasma etching

·   Barbara Hughes, (Forge Nano, USA), Dual Coatings, Triple the Benefit; Atomic Armor for Better Battery Performance

·   Juhani Taskinen, (Applied Materials-Picosun, Finland), ALD for biomedicine

·   Alex Kozen (Univ. of Maryland, USA), ALD for improved Lithium Ion Batteries

·   Malachi Noked (Bar-Ilan Univ., Israel), ALD/MLD for batteries

·   Yong Qin (Chinese Academy of Sciences), ALD for catalysis

·   Jan Macák, (Univ. of Pardubice, Czechia), ALD on nanotubular materials and applications

·   Bora Karasulu, Univ. of Warwick, UK), Atomistic Insights into Continuous and Area-Selective ALD Processes: First-principles Simulations of the Underpinning Surface Chemistry

·   Ageeth Bol (Univ. Michigan, USA), ALD on 2D materials

·   Pieter-Jan Wyndaele (KU Leuven-imec, Belgium), Enabling high-quality dielectric passivation on Monolayer WS₂ using a sacrificial Graphene Oxide template

·   Elton Graugnard (Boise State Univ., USA), Atomic Layer Processing of MoS₂

·   Han-Bo-Ram Lee (Incheon National Univ., Korea), Area-Selective Deposition using Homometallic Precursor Inhibitors

·   Ralf Tonner (Univ. Leipzig, Germany), Ab initio approaches to area-selective deposition

·   Nick Chittock (TU Eindhoven, Netherlands), Utilizing plasmas for isotropic Atomic Layer Etching

·   Heeyeop Chae (Sungkyunkwan Univ., Korea), Plasma-enhanced Atomic Layer Etching for Metals and Dielectric Materials

·   Charles Winter (Wayne State Univ., USA), New Precursors and Processes for the Thermal ALD of Metal Thin Films

·   Anjana Devi, Ruhr Univ. Bochum, Germany), Novel precursors dedicated for Atomic Layer Processing

 

Visa and travel

For more information, see: www.electrochem.org/244/visa-travel/

In addition, Mrs. Francesca Spagnuolo at the ECS (Francesca.Spagnuolo@electrochem.org) can provide you with an official participation letter from the site of the Electrochemical Society.

 

We are looking forward to meeting you in Gothenburg !

Samsung to focus on treatment of gas used in chip production to achieve net-zero emissions

A major cause of greenhouse gas emissions is process gas used in semiconductor wafer manufacturing comes from processing equipment such as reactive ion etching (RIE) and deposition (CVD and ALD). You can read and watch an interview here and study that paper that was recently published by me and my professor friends Henrik Pedersen and Sean Barry:

BALD Engineering - Born in Finland, Born to ALD: Green CVD: How Sustainable is Thin Film Deposition?

Green CVD-Toward a sustainable philosophy for thin film deposition by chemical vapor deposition

It is almost obvious that higher VPs at Samsung and TSMC (LINK) did just that ;-)

[Korea Herald, Link below] Advancing abatement technologies to reduce carbon emissions is the top priority in the Samsung Electronics semiconductor unit's goal to become carbon neutral by 2050, a top official said Friday.

"Treatment of gas used to manufacture semiconductor chips is our biggest focus in our spending (to achieve net-zero emissions)," Song Doo-guen, executive vice president and head of the Environment ＆ Safety Center at Samsung Electronics, told reporters at a briefing in Seoul.

According to the article, Song Doo-guen, executive vice president and head of the Environment & Safety Center at Samsung Electronics, speaks at a briefing in Seoul, Friday and announced that:

• Samsung has pledged a 7 trillion won ($5 billion) investment to achieve its climate ambitions, and announced that it had recently joined RE100, a coalition comprising 380 global enterprises committed to becoming 100 percent renewable.
• Alongside the plan to cut direct carbon emissions, Samsung has also laid out a raft of plans to reduce indirect emissions, mainly by pursuing ultralow-power chip products.
• Other eco-conscious plans it has drawn up include capping the maximum use of freshwater to 300,000 tons a day by 2030 and eradicating gaseous and liquid pollutants by 2040 with treatment technology.

Source: Samsung chip plants look to stamp out carbon footprint (koreaherald.com)

Supply Tightening Expected for Specialty Electronic Gases

Demand to outpace supply for NF3 and WF6 unless alternatives come into play

San Diego, CA, August 31, 2022: TECHCET—the electronic materials advisory firm providing business and technology information— reports that the supply of Specialty Gases, nitrogen trifluoride (NF3) and tungsten hexafluoride (WF6) for electronics could tighten amongst high projected demand by 2025-2026. This forecasted steep trajectory will challenge supply-chains to keep pace. However, alternatives being developed could interrupt this trend. Both NF3 and WF6 are part of a larger US$5 billion specialty gas segment forecasted to grow 30% over the next 5 years, to total US$6.5 billion by 2026. As shown below, NF3 is expected to grow even more steeply, 72% over the forecast period (as highlighted in TECHCET’s 2022 Critical Materials Report™ on Electronic Gases).

Alternatives for these gases are currently in development which could cause a shift in growth trends. The increasing demand for NF3 in electronic manufacturing, including flat-panel displays, has triggered concern among atmospheric scientists over emissions of nitrogen trifluoride, a potent greenhouse gas. Particularly, NF3 gas has a high Global Warming Potential (GWP) compared to other gases. Consequently, the electronics industry is looking at and considering processes for on-site fluorine generation that can use F2, in place of NF3, for chamber cleaning.

...

To read the full article, click here: https://lnkd.in/g25Fa3f2

For more information on the electronic gases market outlook, check out our newest Gases Critical Materials Report™ here: https://lnkd.in/gb95EBC

#semiconductorindustry #electronics #gases #supplychain #electroniccomponents

Electronic Gases Markets – To Approach a US$9 Billion Market in 2022

New materials and increasing chip design complexity drives supply-chain problems for Specialty Gases, Rare Gases and Helium

San Diego, CA, June 15, 2022: TECHCET—the electronic materials advisory firm providing business and technology information— reports that the Electronic Gases market revenues hit US$6.3 billion in 2021 and is forecasted to grow to 8% in 2022. In its recently completed Electronic Gases Report , TECHCET forecasts the 2022 Electronic Gases market will reach almost US$6.8 billion—growth primarily attributed to Specialty Gases. As leading-logic and new generations of memory continue to ramp, Specialty Gases consumed in etching, deposition, chamber cleaning, and other applications remain in strong demand. This segment is forecasted to increase by 10% in 2022 with ~9% CAGR through to 2026, as indicated in TECHCET’s newly released 2022 Critical Materials Report™ on Electronic Gases, authored by Jonas Sundqvist, PhD.

In the near-term, there are supply issues for key industry gases, such as helium and neon; and in the longer term, the supply/demand balance for gases such as nitrogen trifluoride (NF3), tungsten hexafluoride (WF6), and others could tighten as industry demand grows.

Neon supply capacity is at risk due to the Russian invasion of Ukraine. Some gas supply from these sources may be at a permanent loss. Helium supply-chain disruptions stemming from lack of Russian supply availability are starting to have an impact on the semiconductor industry. Russia’s current export ban on helium and rare gases will prolong the supply-chain issues with Helium and rare gases like Neon. The war is only part of the helium supply issue – maintenance problems, delayed product availability, and production disruptions in other helium producing regions are all adding to the tightness in the supply chain.

As new semiconductor device fabs come online globally over the next several years, supply constraints may appear for other gases (B2H6, WF6, NF3, CF-gases) since demand increases are expected to outpace supply. With semiconductor manufacturers increasing fab production capacity, the demand for diborane (B2H6) material is rapidly increasing as it is critical in many device applications such as in doped carbon hard masks.

As more CVD/ALD deposition process passes are added for multi-patterning and EUV-lithography, cleaning demand is increasing, thus we anticipate huge growth in NF3 (used for chamber cleaning). With the current projections, demand may outrun supply causing tightness in NF3 availability come 2025-2026. Similarly, TECHCET estimates there may be supply issues with WF6 around 2025-2026. However, the possibility of molybdenum (Mo) replacing tungsten (W) for memory applications could circumvent any WF6 shortage. WF6 demand is primarily driven by vertical scaling in 3DNAND to higher layer counts, though new interconnect materials could lessen any future supply/demand imbalance.

Among the sources of electronic gases highlighted in TECHCET’s CMR are Air Products, Air Liquide, EMD / Merck, Linde, Matheson Gas, SK Materials, Gazprom, Huate Gas, Peric, and many others. For more details on the Electronic Gases market segments and growth trajectory go to: https://techcet.com/product/gases/

ABOUT TECHCET: TECHCET CA LLC is an advisory services firm focused on process materials supply-chains, electronic materials business, and materials market analysis for the semiconductor, display, solar/PV, and LED industries. Since 2000, the company has been responsible for producing the Critical Material Reports™, covering silicon wafers, semiconductor gases, wet chemicals, CMP consumables, Photoresists, and ALD/CVD Precursors. The Critical Materials Council (CMC) of semiconductor fabricators is a business service offered by TECHCET, and includes materials supplier Associate Members. For additional information about reports, market briefings, CMC membership, or custom consulting please contact info@cmcfabs.org, +1-480-332-8336, or go to www.techcet.com.

Electronic Gas Markets – Strong Growth, Pressing Supply-Chain Issues

San Diego, CA, March 3, 2022: TECHCET—the electronic materials advisory firm — announced a positive growth outlook for Electronic Gases through 2026. The 2022 Electronic Gas market is expected to top US$7 billion, driven mainly by logic chip fab expansions. Despite an expected 8% CAGR, there are pressing supply-chain issues, both nearer term and possibly longer term, exist in this industry segment. The Russia-Ukraine war is sparking growing concerns relating to the availability of gases such as neon, helium and other gases critical to semiconductor production around the globe.

The turmoil in the region, and related economic sanctions against Russia, will likely affect several key gases used by the semiconductor industry. Neon and helium are two examples. TECHCET’s latest analysis shows that majority of all high purity neon imports into the US is coming from the Ukraine. This represents <50% of total US demand.

TECHCET’s contacts in Ukraine indicate that rare gas purifiers in Ukraine have been temporarily shut down due to the conflict. So far there has only been an interruption of 5-6 days. However, if the fighting lingers on this could have a major impact on the chip industry that has been pushing hard to increase production.

Many of the supply-chains that support the industry are running thin on capacity. Investments in more material production has been lacking and demand for materials has been growing so fast that material pinch points exist in nearly every material segment, including gas processing equipment and subsystems. On-going issues on lead-times for all types of components related to gas processing (tool gas box upgrades, precursor deliver systems, bulk refill) are expected to impact lead-times for gas and precursor supply systems

“Even those material supply-chains that were looking fairly balanced in 2020 are increasingly getting pinched and any perturbation in the supply-chain can cause shortage issues,” said Lita Shon-Roy, TECHCET’s President & CEO. Helium is a prime example where hiccups in the supply-chain are causing increased lead-times and availability problem as the chip industry pushes up their demand. The US BLM, the US’s key source of helium, has been experiencing maintenance issues, delaying product availability, and Russia’s Gazprom purified helium production has been delayed (6 months or more) due to fire incidents over the past several months. “Add war into the mix and supply can be even further strained,” offered Shon-Roy.

As new semiconductor device fabs come online in the next few years, supply constraints may appear for other gases (B2H6, WF6, NF3, CF-gases) as demand increases are expected to outpace supply.

For more details on the Electronics Gas market segments and growth trajectory go to:

https://techcet.com/product/gases/

Don’t forget to register for the 2022 Critical Materials Conference (CMC) on April 28-29 in Chandler, AZ.

Green CVD: How Sustainable is Thin Film Deposition?

Professors Henrik Pedersen, Sean Barry, and Jonas Sundqvist join Tyler to discuss their recent publication in JVSTA about Green CVD. The trio talk about the conception of a new research field which concerns creating more sustainable thin film deposition practices without sacrificing film quality and offers some perspective on a number of areas and strategies addressed in the manuscript. 

Read the paper here: https://avs.scitation.org/doi/10.1116...

Green CVD—Toward a sustainable philosophy for thin film deposition by chemical vapor deposition

Thin films of materials are critical components for most areas of sustainable technologies, making thin film techniques, such as chemical vapor deposition (CVD), instrumental for a sustainable future. It is, therefore, of great importance to critically consider the sustainability aspects of CVD processes themselves used to make thin films for sustainable technologies. Here, we point to several common practices in CVD that are not sustainable. From these, we offer a perspective on several principles for a sustainable, “Green CVD” philosophy, which we hope will spur research on how to make CVD more sustainable without affecting the properties of the deposited film. We hope that these principles can be developed by the research community over time and be used to establish research on how to make CVD more sustainable and that a Green CVD philosophy can develop new research directions for both precursor and reactor design to reduce the precursor and energy consumption in CVD processes.

Electrical energy consumption and greenhouse gas emission in 300 mm logic wafer production for relevant technology nodes in production in 2021 and to be ramped up in the next five years.

We foresee a new research field focused on developing more sustainable CVD processes without impacting the performance of the deposited film negatively. To develop this, we suggest an adaption of a philosophy similar to Green Chemistry,8 a philosophy for all areas of chemistry and chemical engineering to make more sustainable processes and products. Green chemistry focuses on reducing the amount of hazardous materials used and generated, the amount of energy consumed, and designing less harmful molecules. Here, we outline suggestions for such a Green CVD philosophy

A Green CVD philosophy needs to focus on reducing the total energy consumption, reducing molecular consumption by increasing the efficiency in atom usage, and reducing the use of and formation of hazardous molecules. This should be done for the whole process chain of a CVD process—from precursor synthesis to waste gas abatement. A sustainable CVD process must also take an active stand against human rights abuse throughout the whole materials chain, use renewable energy for CVD equipment, and make use of the excess heat produced by CVD equipment. 

Summary of a suggested Green CVD philosophy

From this breakdown of the CVD process, we suggest the following principles to summarize a sustainable Green CVD philosophy:

(1) Use precursors that can be supplied to the process in close to the stoichiometric ratios in the target film to reduce molecular waste.

(2) Use precursors that undergo reactions with lower activation energies to reduce energy consumption and molecular waste.

(3) Use less hazardous precursor molecules to make the CVD process safer.

(4) Use precursors that produce less harmful by-products that are easier to handle.

(5) Minimize waste and energy consumption in the precursor supply chain.

(6) Minimize the thermal budget and vacuum volume of the CVD reactors.

(7) Use the most energy-efficient way to activate the deposition chemistry, including plasma methods.

(8) Recycle unconsumed CVD gases and precursors.

(9) Identify, prevent, address, and account for human rights abuses in the CVD supply chain.

(10) Use renewable energy for the CVD process and harvest excess heat.

Finally, we appreciate that industry is reluctant to change precursors and CVD processes that have been successfully brought into high volume production. As we have already pointed out, the research area of Green CVD should strive to make a given CVD process more sustainable without causing negative effects on the performance of the deposited film. Ideally, Green CVD should not affect the price of the CVD processing step either. It is very reasonable to expect that the demands for more sustainable production will increase and with that a need for more sustainable CVD. As in other research, a strong collaboration between industry and academia will strengthen the Green CVD development effort.

Full article in JVSTA: 

Green CVD—Toward a sustainable philosophy for thin film deposition by chemical vapor deposition
Journal of Vacuum Science & Technology A 39, 051001, (2021); https://doi.org/10.1116/6.0001125  Henrik Pedersen, Seán T. Barry, and Jonas Sundqvist

 

South Korean equipment makers recorded mixed results in the first quarter of 2021

출처 : THE ELEC, Korea Electronics Industry Media(http://thelec.net) - South Korean equipment makers recorded mixed results in the first quarter of 2021.

• Fab equipment vendors posted high growth, while display equipment firms underperformed.
• Fab equipment makers benefited from aggressive spending by semiconductor companies.
• CVD/ALD equipment companies showed good growth, see below (Jusung, Wonik IPD, Eugene Technologies

Semes, Samsung Electronics’ fab equipment subsidiary, recorded 870.6 billion won in sales, an increase of 62.3% from a year prior. It recorded 112.8 billion won in operating income, an increase of 40.5% over the same time period. The growth likely stems from Samsung starting to put in equipment to its P2 chip line at its Pyeontaek plant during the quarter. Overheat transport accounted for 60% of the sales recorded by Semes during the quarter.

SFA recorded 355.6 billion won in sales and 42.3 billion won in operating income, a drop of 3.3% and 1.6%, respectively, a year prior. Non-display business accounted for 65.1% of its sales. SFA, which previously focused on display kits, managed to record level earnings to a year prior thanks to other business areas.

Wonik IPS recorded 254.5 billion won in revenue and 24.2 billion won in operating income, a surge of 39.9% and 68.1%, respectively, from a year prior. The firm previously focused on fab equipment for use in memory chip production. But it has begun supplying kits for foundry beginning last year, which helped growth.

Eugene Technology recorded 100.7 billion won in revenue and 30.7 billion won in operating income. The company recorded an operating margin rate of 30.5%. Its LPCVD equipment supplied to SK Hynix for the latter’s M16 DRAM fab led the growth.

Jusung Engineering posted 75.3 billion won in sales in the quarter, double that of the year prior. It turned a profit from a year prior and posted 16 billion won in operating income. The company won the order for atomic layer deposition kits from SK Hynix for use in next-generation DRAMs. Jusung is the sole supplier of the kits.

Hanmi Semiconductor recorded 70.9 billion won in sales, a jump of 79% from a year prior. Its operating income increased 160% year-on-year to 19.3 billion won. It won 22 orders during the quarter. It has signed supply deals with SK Hynix, Amkor Technology Korea, ASE, NXP, Nanya, SPIL and others for a combined worth of 87 billion won.

YIK recorded 67.5 billion won in sales and 9.7 billion won in operating income, a jump of 99.7% and 177.1%, respectively, from a year prior. The firm mainly provides electrical die sorting equipment. The firm is seeing more orders from Samsung, having signed a 155.3 billion won deal with the tech giant in the first quarter alone.

South Korean fab equipment makers are expected to post solid growth throughout 2021 from increased spending this year by Samsung and SK Hynix. SK Hynix had said in the conference call for the first quarter that it plans to execute some of its spending it planned for 2022 earlier to this year.

SEMI is expecting global fab equipment spending to increase 15.5% this year to US$70 billion. Meanwhile, South Korean display equipment makers underperformed during the first quarter.

Samsung Display and LG Display have been conservative with their spending due to uncertainties surrounding the display market. But increased spending in OLED from Chinese panel makers such as BOE and Tianma staved off a huge dip in profitability.

Only few companies recorded growth, such as AP Systems, which saw sales drop 6.9% year-on-year but operating income surge 53.2% over the same time period. The company benefited from laser annealing equipment supplied to BOE for the B12 line.

Youngwoo DSP saw a surge in its operating income from supplies to its Chinese customers. KC Tech saw sales jump 21.1% but operating income remained flat. Top Engineering saw 9.6 billion won in operating loss from the 6.1 billion won operating loss posted by subsidiary Powerlogics. Dong A Eltek recorded 2.3 billion won in operating loss, though sales doubled. The firm said increased cost from the pandemic stunted growth.

Charm Engineering continued to record loss. HB Technology, Toptec and Philoptics all turned to the red. 

Local display equipment makers are expected to see a turnaround starting in the fourth quarter when Samsung Display and LG Display decide on new spending plans around the same time.