Tuesday, November 7, 2023
Molybdenum: The New Frontier in Semiconductor Metallization according to Lam Research
Thursday, October 19, 2023
ASML and Lam Research Navigate US Chip Restrictions with Continued Focus on China
The evolving landscape of the global semiconductor industry, marked by the escalating US chip curbs, has seen two industry leaders, ASML and Lam Research, maintain a significant focus on the Chinese market. ASML, the Dutch semiconductor behemoth, has reported a remarkable surge in its sales to China. As they dominate the market for DUV lithography machines, essential for chip production, sales to China for ASML soared to €2.44 billion ($2.58 billion) in the recent quarter, nearly doubling the figures from the previous one. Meanwhile, Lam Research, a US chipmaking equipment supplier for CVD, ALD and Etch, is experiencing a year-on-year decline in revenue by 31.4% to $3.5 billion in the quarter ending Sept. 24, remains buoyant about the Chinese market. With China accounting for a staggering 48% of its total revenue, up from 30% the previous year and 26% in the preceding quarter, CEO Tim Archer remains optimistic. He emphasized that the new U.S. export restrictions brought no unforeseen challenges and anticipates sustainable business growth in China, citing the country's long-term objectives.
Photo : ASML on X
However, it's not all smooth sailing. As the US and the Netherlands tighten their grip on chip equipment exports in an attempt to curb China's burgeoning semiconductor industry, challenges arise for these giants. Notably, Lam Research's shares fell by over 5% in extended trading after Archer's announcement. Furthermore, even though both ASML and Lam Research foresee continued demand from China, the trajectory remains uncertain with the intricate web of export controls and regulations. Still, with giants like KLA, Applied Materials, Tokyo Electron, and the aforementioned firms steering the ship, the semiconductor industry remains hopeful about navigating these turbulent waters.
ASML ArFi vs EUV sales by quarter pic.twitter.com/upEE0vXwpO— Fred Chen (@DrFrederickChen) October 18, 2023
Sources:
ASML stays optimistic on China as sales surge amid U.S. chip curbs - Nikkei Asia
Lam Research sees no material impact from new U.S. chip curbs - Nikkei Asia
Thursday, April 8, 2021
Why China denied Applied Materials take over of Hitachi Kokusai
Thursday, January 28, 2021
Micron Delivers Industry’s First 1α DRAM Technology
Wednesday, December 9, 2020
ALD to take over more and more as CVD and spin-on processes no longer are viable for 3D NAND
- Gapfill dielectrics
- Conformal liners
- Patterning spacers and masks
- Hermetic encapsulation
- Etch stop layers
- Optical films
Monday, September 21, 2020
Lam Research launch the advanced Striker® FE platform for 3D chip architectures like 3DAND and DRAM
- Lam has been leading gap fill for a long time and their new proprietary surface modification technique (ICEFill) to achieve highly preferential bottom-up and void-free gapfill while retaining the film quality inherent to atomic layer deposition (ALD).
- The platform is specially prevalent in 3D NAND devices, as well as prevents collapse issues in DRAM and logic devices.
- The Striker FE platform with ICEFill technology is part of the Striker ALD product family.
- Lam applied for ICEFill USPTO Trade Mark February 2020 (LINK)
FREMONT, Calif., Sept. 21, 2020 (LINK) -- Lam Research Corp. (Nasdaq: LRCX) today announced the advanced Striker® FE platform, a new processing solution for manufacturing high-aspect-ratio chip architectures. Striker FE utilizes an innovative, first of its kind ICEFill™ technology for filling extreme structures in 3D NAND, DRAM, and logic devices at emerging nodes. This system delivers the continued cost and technology scaling that is required to meet the semiconductor industry roadmap.
Keyword Cluster for Lam Research Gapfill (Patbase)
Traditional methods of gapfill for semiconductor manufacturing include legacy chemical vapor deposition, diffusion/furnace, and spin-on processes. These techniques are no longer viable for today’s 3D NAND requirements, as they are limited by the tradeoffs between quality, shrinkage, and gapfill voids. In contrast, Lam’s Striker ICEFill harnesses a proprietary surface modification technique to achieve highly preferential bottom-up and void-free gapfill while retaining the film quality inherent to atomic layer deposition (ALD). The ICEFill technology removes the existing limitations for filling high-aspect-ratio features which are especially prevalent in 3D NAND devices, as well as prevents collapse issues in DRAM and logic devices.
“Our goal is to provide customers with the most enabling ALD technology,” said Sesha Varadarajan, senior vice president and general manager of the Deposition product group at Lam Research. “This technology combines the ability to produce high quality oxide films with superior gapfill performance, in a single processing system with the productivity advantages offered by our industry leading quad station module architecture.”
The Striker FE platform with ICEFill technology is part of the Striker ALD product family. For more information about the Striker product family visit the product page.
Wednesday, March 4, 2020
Lam’s new Sense.i Etch platform delivers industry-leading output and innovative sensor technology
- Lam Research (NASDAQ:LRCX) introduces the Sense.i tool, which etches finer 3D details on silicon wafers for chips.
- The Sense.i platform enables the critical etch capabilities required to continue advancing uniformity and etch profile control for maximizing yield and lowering wafer costs
- 3D features can help Lam customers like Samsung and SK Hynix put more memory capacity into small areas such as smartphones.
With core technology evolved from Lam’s industry-leading Kiyo® and Flex® process modules, the Sense.i platform enables the critical etch capabilities required to continue advancing uniformity and etch profile control for maximizing yield and lowering wafer costs. As dimensions shrink and aspect ratios increase, the Sense.i platform is designed to support future technology inflections.
Powered by Lam’s Equipment Intelligence® technology, the self-aware Sense.i platform enables semiconductor manufacturers to capture and analyze data, identify patterns and trends, and specify actions for improvement. Sense.i also features autonomous calibration and maintenance capabilities that reduce downtime and labor costs, and delivers machine learning algorithms that allow the tool to self-adapt to minimize process variations and maximize wafer output.
The Sense.i platform has a revolutionary space-saving architecture that will help customers meet their future wafer output targets by producing more than a 50% improvement in etch output density. As semiconductor manufacturers develop smarter, faster, and denser chips, processes are rapidly growing in complexity and number of steps. This requires a greater number of process chambers in a fab and reduces total output for a given floor space. The Sense.i platform’s smaller footprint benefits either a new fab build or a fab undergoing a node-to-node technology conversion.
“Lam is introducing the most innovative etch product that has been developed in the last 20 years,” said Vahid Vahedi, senior vice president and general manager of the Etch product group at Lam Research (LRCX). “Sense.i extends our technology roadmap to meet our customers’ next-generation requirements while solving the critical cost scaling challenges they’re facing in their business. With more than four million wafers processed on Lam etch systems every month, Lam has an installed-base that provides extraordinary learning to innovate, design, and produce the best tools for semiconductor manufacturing.”
Friday, August 9, 2019
Lam Research Adds Global Wafer Stress Management Solutions to Portfolio to 3D NAND Scaling
Designed to provide a cost-effective solution for controlling wafer bow in 3D NAND manufacturing, the VECTOR DT system is the newest addition to Lam’s plasma-enhanced chemical vapor deposition (PECVD) product family. VECTOR DT provides a single-step solution for wafer shape management by depositing a tunable counter-stress film on the back of the wafer without contacting the front side, thereby enabling improved lithography results, reduced bow-induced failures, and integration of high performance but highly stressed films. With strong customer adoption since its debut, the VECTOR DT installed base continues to grow as customers are transitioning to more than 96 layers.
In addition to depositing a counter stress film, Lam provides the flexibility to remove backside films, allowing customers to adjust wafer stress during the 3D NAND manufacturing flow. Lam’s EOS GS wet etch product complements the VECTOR DT by simultaneously removing backside and bevel films with industry-leading wet etch uniformity, while fully protecting the wafer front side. As part of a comprehensive wafer bow management solution, Lam’s EOS GS has also been adopted by memory manufacturers worldwide.
“As our customers continue to dramatically increase the number of memory cell layers, the cumulative stress and wafer bow can exceed the limits of a lithography tool. Minimizing stress-induced distortion is critical for achieving the desired yield and enabling the cost-per-bit roadmap,” said Sesha Varadarajan, senior vice president and general manager of the deposition product group at Lam Research. “With the addition of the VECTOR DT and EOS GS systems, we are expanding our stress management solutions portfolio for managing global stress in support of our customers’ vertical scaling roadmap.”
Thursday, July 4, 2019
Lam Research’s Richard Gottscho shares his perspective advanced processes for 5 and 3 nm
Semiconductor Engineering: LINK
Thursday, September 6, 2018
Atomic Layer Etching: Rethinking the Art of Etch
Atomic Layer Etching: Rethinking the Art of Etch
Atomic layer etching (ALE) is the most advanced etching technique in production today. In this Perspective, we describe ALE in comparison to long-standing conventional etching techniques, relating it to the underlying principles behind the ancient art of etching. Once considered too slow, we show how leveraging plasma has made ALE a thousand times faster than earlier approaches. While Si is the case study ALE material, prospects are better for strongly bound materials such as C, Ta, W, and Ru. Among the ALE advantages discussed, we introduce an ALE benefit with potentially broad application—the ALE smoothing effect—in which the surface flattens. Finally, regarding its well-established counterpart of atomic layer deposition (ALD), we discuss the combination of ALE and ALD in tackling real world challenges at sub-10 nm technology nodes