Friday, December 29, 2023
Samsung Electronics faces challenges in securing tax breaks from the U.S. government for its new chip plant in Taylor, Texas
Friday, December 8, 2023
IBM and Samsung Revolutionize Semiconductor Industry with Groundbreaking VTFET Transistor Technology
Wednesday, November 1, 2023
Surge in HBM Demand Marks Memory Market Recovery and Anticipated Growth in 2024 for Samsung
Samsung Electronics' financial results for 3Q23 highlighted a 12% QoQ revenue increase to 67.40 trillion Korean won, although there was a 12% YoY decrease. Notably, the company reported its highest quarterly profit for the year. Despite potential economic uncertainties in 2024, Samsung is optimistic about the recovery of the memory market and the rebound in smartphone demand.
The memory sector saw a recovery compared to the previous quarter, especially in PC and mobile due to the rise in adoption of high-density DRAM and NAND products. The completion of customer inventory adjustments also played a role. Server demand was subdued for traditional servers due to macroeconomic uncertainties. However, strong demand persisted for AI-oriented high-density products. Samsung emphasized its focus on expanding sales of advanced node products like HBM DDR5, LPDDR5, and UFS 4.0. They also intend to manage high inventory products through production adjustments. The company expects the recovery trend in the memory market to accelerate further in the fourth quarter. Additionally, there has been a notable surge in HBM demand and the company is actively advancing its HBM businesses and plans to augment its HBM supply capacity by 2.5 times next year.
Trendforce on X (LINK)
The foundry division secured a record number of new orders, particularly in the HPC domain, despite a slow recovery in the mobile market. The new Taylor factory in Texas is set to begin production using the second-gen 3nm GAA process. The advanced packaging business has also been flourishing with orders from both domestic and international HPC clients.
Profits in the mobile panel business surged due to new flagship models from major clients. In contrast, the large panel business faced tepid demand. Samsung aims to cater to the growing mobile panel demand and increase profitability in the large panel sector by introducing new products and enhancing yield rates.
With the global economy expected to bounce back in 2024, the smartphone market's demand is anticipated to surge. High-end market growth is likely to continue, driven by the global recovery of the smartphone market.
Looking ahead to 2024, Samsung anticipates increased PC and mobile demand due to product replacement cycles initiated during the pandemic's early phase. High-density trends in both DRAM and NAND are expected to persist, propelled by on-device AI advancements. The company plans to focus on advanced node products, including 1B nanometer DDR5, LPDR5X, PCI Gen 5, and UFS 4.0, to bolster product competitiveness and profitability. Emphasizing the growing demand for generative AI, Samsung aims to strengthen its market position with high-density, low-power, and high-performance products for on-device AI, which has recently gained significant attention.
Sources;
Samsung Electronics Co Ltd (SSNLF) Q3 2023 Earnings Conference Call Transcript | Seeking Alpha
Tuesday, May 2, 2023
TechInsights found Samsung DRAM chips in Samsung Galaxy S23 with Five EUV mask layers
TechInsights found Samsung DRAM chips in Samsung Galaxy S23 with Five EUV mask layers. These are from DRAM wafers produced in the so-called D1a node (or D1α, α as in alpha)
👉https://t.co/oSv4yiHJiB
— TechInsights (@techinsightsinc) May 1, 2023
Get your products to market faster: @TechInsightsinc found next-gen #DRAM found in the #GalaxyS23. @Samsung is the first company to apply five #EUV lithography masks on DRAM D1a, the first node to fully adopt EUVL for #DRAM. Learn more. #semiconductor pic.twitter.com/2Pqg7gKuE9
This is in line with a previous press release from Samsung (2020) so no real surprise here: Samsung Announces Industry’s First EUV DRAM with Shipment of First Million Modules – Samsung Global Newsroom
"EUV to be fully deployed from 4th-gen 10nm-class DRAM (D1a) next year"
EUV will be fully deployed in Samsung’s future generations of DRAM, starting with its fourth-generation 10nm-class (D1a) or the highly-advanced 14nm-class, DRAM. Samsung expects to begin volume production of D1a-based DDR5 and LPDDR5 next year, which would double manufacturing productivity of the 12-inch D1x wafers.
Friday, November 4, 2022
Samsung use NCD ALD for wirebonding alternatives to expensive Gold
Sunday, September 18, 2022
Samsung to focus on treatment of gas used in chip production to achieve net-zero emissions
"Treatment of gas used to manufacture semiconductor chips is our biggest focus in our spending (to achieve net-zero emissions)," Song Doo-guen, executive vice president and head of the Environment & Safety Center at Samsung Electronics, told reporters at a briefing in Seoul.
- Samsung has pledged a 7 trillion won ($5 billion) investment to achieve its climate ambitions, and announced that it had recently joined RE100, a coalition comprising 380 global enterprises committed to becoming 100 percent renewable.
- Alongside the plan to cut direct carbon emissions, Samsung has also laid out a raft of plans to reduce indirect emissions, mainly by pursuing ultralow-power chip products.
- Other eco-conscious plans it has drawn up include capping the maximum use of freshwater to 300,000 tons a day by 2030 and eradicating gaseous and liquid pollutants by 2040 with treatment technology.
Sunday, September 4, 2022
Samsung Electronics Breaks Ground on New Semiconductor R&D Complex in Giheung, Korea
Samsung to invest KRW 20 trillion by 2028 to build advanced research facility
- Samsung Electronics plans to invest about KRW 20 trillion by 2028 for the complex in an area covering about 109,000 square meters within its Giheung campus.
- The new facility will lead advanced research on next-generation devices and processes for memory and system semiconductors, as well as development of innovative new technologies based on a long-term roadmap.
Wednesday, June 22, 2022
NCD supplied ALE and ASD equipment to Samsung Electronics Co., Ltd.
<Lucida M200PL Series ALD System>
Tuesday, February 8, 2022
Samsung Electronics Is Pushing Hard to Bring Monolithic 3D DRAM to HVM by 2025
Tuesday, June 1, 2021
South Korean equipment makers recorded mixed results in the first quarter of 2021
- Fab equipment vendors posted high growth, while display equipment firms underperformed.
- Fab equipment makers benefited from aggressive spending by semiconductor companies.
- CVD/ALD equipment companies showed good growth, see below (Jusung, Wonik IPD, Eugene Technologies
Friday, March 26, 2021
Samsung confirms first HKMG for DDR5 DRAM
ASM International recently acknowledged that ALD High-k/Metal Gate (HKMG) is finally in high volume production for DRAM (LINK). Now Samsung confirms that. This is a small victory for all people working on this process for such a long time. My first tool ownership when I moved to Germany and started at Infineon was an ASM Polygon 200 mm cluster with a Pulsar 2000 chamber running HfO2, TiN, TiHfN, TiAlN, Al2O3, and my not fully understood HfN ALD process and a Poly chamber that I never really cared too much about. Press release below - and now do the maths - how big this business is once rolled out for all DRAM technologies to come - yeah $$$, many tulips indeed.
Samsung Develops Industry’s First HKMG-Based DDR5 Memory; Ideal for Bandwidth-Intensive Advanced Computing Applications
512GB capacity DDR5 module made possible by an 8-layer TSV structureHKMG material reduces power by 13 percent while doubling the speed of DDR4
Friday, February 26, 2021
Tech Insights Teardown: Samsung’s D1z DRAM with EUV Lithography
Reuters: SK Hynix signs five-year deal worth $4.3 billion with ASML to secure EUV scanners
Saturday, November 28, 2020
Intel remains in the lead in 2020 semiconductor sales
Wednesday, October 28, 2020
Stanford and Samsung Display use solar panel tech to create new ultrahigh-res OLED display
Wednesday, September 2, 2020
TechInsights’ Memory Process: 3D NAND Word Line Pad webinar
TechInsights’ ‘Memory Process: 3D NAND Word Line Pad‘ #webinar compares 9x-layer 3D NAND devices from major manufacturers and discusses the process sequence with emphasis on the word line pad (WLP). Watch on demand here LINK
Wednesday, July 8, 2020
Samsung Leads Semiconductor Paradigm Shift with New Material Discovery : Amorphous Boron Nitride as Ultra Low-k
2D Materials – The Key to Overcoming Scalability Challenges
Recently, SAIT has been working on the research and development of two-dimensional (2D) materials – crystalline materials with a single layer of atoms. Specifically, the institute has been working on the research and development of graphene, and has achieved groundbreaking research outcomes in this area such as the development of a new graphene transistor as well as a novel method of producing large-area, single-crystal wafer-scale graphene. In addition to researching and developing graphene, SAIT has been working to accelerate the material’s commercialization.“To enhance the compatibility of graphene with silicon-based semiconductor processes, wafer-scale graphene growth on semiconductor substrates should be implemented at a temperature lower than 400°C.” said Hyeon-Jin Shin, a graphene project leader and Principal Researcher at SAIT. “We are also continuously working to expand the applications of graphene beyond semiconductors.”
2D Material Transformed – Amorphous Boron Nitride
The newly discovered material, called amorphous boron nitride (a-BN), consists of boron and nitrogen atoms with an amorphous molecule structure. While amorphous boron nitride is derived from white graphene, which includes boron and nitrogen atoms arranged in a hexagonal structure, the molecular structure of a-BN in fact makes it uniquely distinctive from white graphene.Amorphous boron nitride has a best-in-class ultra-low dielectric constant of 1.78 with strong electrical and mechanical properties, and can be used as an interconnect isolation material to minimize electrical interference. It was also demonstrated that the material can be grown on a wafer scale at a low temperature of just 400°C. Thus, amorphous boron nitride is expected to be widely applied to semiconductors such as DRAM and NAND solutions, and especially in next generation memory solutions for large-scale servers.
“Recently, interest in 2D materials and the new materials derived from them has been increasing. However, there are still many challenges in applying the materials to existing semiconductor processes.” said Seongjun Park, Vice President and Head of Inorganic Material Lab, SAIT. “We will continue to develop new materials to lead the semiconductor paradigm shift.”
Thursday, May 21, 2020
Reuters: Samsung Electronics builds sixth domestic contract chip-making line
Saturday, January 4, 2020
Samsung's 3 nm Gate-All-Around FET prototype
Saturday, November 2, 2019
Micron claim DRAM Technology Leadership As Samsung And SK Hynix Push Out EUV
- ASML reported that four EUV lithography systems will be pushed out from shipping in 4Q 2019.
- My analysis suggests Samsung Electronics and SK Hynix are two of the companies pushing our EUV for their memory business.
- Micron's 1z nm DRAM already is technologically advanced, and are two quarters ahead of Samsung and one year ahead of SK Hynix.
Full article: Micron: DRAM Technology Leadership As Samsung And SK Hynix Push Out EUV, Seeking Alpha (LINK)
A DRAM roadmap by the Information Network showing Micron’s transition to 1z nm and gain of leadership over rivals Samsung and SK Hynix.
Friday, March 15, 2019
Samsung’s GAA Transistor, MBCFET™ aims at Reduced Size and Increased Performance
Source: Samsung LINK
Written by : Abhishekkumar Thakur and Jonas Sundqvist