Samsung Electronics Breaks Ground on New Semiconductor R&D Complex in Giheung, Korea

Samsung to invest KRW 20 trillion by 2028 to build advanced research facility

Samsung Electronics recently broke ground for a new semiconductor research and development complex in Giheung, Korea, aiming to extend its leadership in state-of-the-art semiconductor technology.

• Samsung Electronics plans to invest about KRW 20 trillion by 2028 for the complex in an area covering about 109,000 square meters within its Giheung campus. 
• The new facility will lead advanced research on next-generation devices and processes for memory and system semiconductors, as well as development of innovative new technologies based on a long-term roadmap.

Today’s groundbreaking ceremony was attended by Samsung Electronics Vice Chairman Jay Y. Lee, President and CEO Kye Hyun Kyung, President of the Memory Business Jung-Bae Lee, President of the Foundry Business Siyoung Choi and President of the S.LSI Business Yong-In Park, along with more than 100 employees.

“Our new state-of-the-art R&D complex will become a hub for innovation where the best research talent from around the world can come and grow together,” said President Kye Hyun Kyung, who also heads the Device Solutions (DS) Division. “We expect this new beginning will lay the foundation for sustainable growth of our semiconductor business.”

Samsung Electronics’ Giheung campus, located south of Seoul near the DS Division’s Hwaseong campus, is the birthplace of the world’s first 64Mb DRAM in 1992, marking the beginning of the company’s semiconductor leadership.

Source: Samsung Electronics Breaks Ground on New Semiconductor R&D Complex in Giheung, Korea – Samsung Global Newsroom