Tuesday, March 26, 2019

The Pictures from EFDS ALD for Industry in Berlin!

The Pictures from EFDS ALD for Industry in Berlin! All photos were as usual taken by Martin Knaut, and he did a fantastic job also this time. All presentations are available for download if you attended the event.

My presentation is available in Slide Share:


Link for Photo show: LINK

Monday, March 25, 2019

Picosun’s high aspect ratio ALD enables 3D thin-film batteries

ESPOO, Finland, 25th March 2019 – Picosun Group, a leading supplier of advanced ALD (Atomic Layer Deposition) thin film coating technology for industrial production, reports excellent results in conformal ALD coatings for solid-state 3D thin-film batteries.

Solid-state thin-film batteries are increasingly needed in portable and wearable electronics such as smartphones, tablets, smart watches, autonomous sensors, and also in implantable medical devices. These batteries have to combine small, compact size with high energy density, which is why the next step is to move away from planar battery geometry to a three-dimensional one. In 3D thin-film batteries, nanostructured, corrugated high aspect ratio (HAR) structures multiply the active surface area and thus the battery’s charge storage capacity. 

Advanced manufacturing methods are called for to produce the functional layers such as electrodes and solid electrolyte inside these structures. ALD is able to create the highest quality conformal material layers inside HARs even as high as 1:3000, so it shows great potential for 3D thin-film battery manufacturing. Picosun’s high aspect ratio ALD is already utilized in various semiconductor and MEMS applications on an industrial scale, and now it has been successfully used in manufacturing solid-state 3D thin-film battery electrodes. Excellent results have been achieved already with the standard PICOSUN™ ALD reactor configuration with optimized process parameters, but for even more challenging HAR coating needs, Picosun’s patented Picoflow™ diffusion enhancing technology is ideal.

“The skyrocketing popularity of portable and wearable electronics creates a demand for compact and embeddable energy sources to power these devices. Solid-state 3D thin-film batteries are a strong candidate for this, and we at Picosun are happy to introduce our ALD solutions to the manufacturers. It is notable that even with our basic ALD we are able to create the functional layers with the highest conformality inside the batteries’ challenging HAR structures, and our approach is readily scalable to high volume industrial production. And, when these structures get even more complicated on nano-scale, our Picoflow™ technology is there to guarantee top quality deposition results with industry-proven reliability,” summarizes Mr. Juhana Kostamo, Managing Director of Picosun Group.

Sunday, March 24, 2019

Atomic Limits launch online data base for ALD processes

This week at the EFDS ALD for Industry Conference, Prof. Kessels from TU Eindhoven (NL) launched the Atomic Limits online database for ALD processes. The interface to the database is based on an awesome periodic table for easy navigation (based on the R. Puurunen 2005 JAP review).

As reported on the Atomic Limits blog, the data in the database is based on the data in the papers by: Riikka Puurunen, J. Appl. Phys. 97, 121301 (2005) and Ville Miikkulainen, Markku Leskelä, Mikko Ritala, and Riikka Puurunen, J. Appl. Phys. 113, 021301 (2013). Other major additions were based on the reviews by Harm Knoops, Tahsin Faraz, Karsten Arts and Erwin Kessels, to be published in J. Vac. Sci. Technol. A 37 (2019) and Adrie Mackus, Joel Schneider, Callisto MacIsaac, Jon Baker and Stacey Bent, Chem. Mater. 31, 1142 (2019).

Atomic Limits ALD Database LINK

Screen capture from the awesome periodic table of ALD with direct links to the refernces in the database (atomiclimits.com).

Saturday, March 23, 2019

Aledia Taps Veeco's Compound Semiconductor Expertise, Citing High-Quality Gallium Nitride Epitaxial Film Performance

Display Technology Innovator Expands Portfolio of Veeco Thin Film Process Technologies to Advance Next-Generation 3D Micro-LEDs

PLAINVIEW, New York, — Veeco Instruments Inc. (Nasdaq: VECO) announced today that Aledia, a developer and manufacturer of next-generation 3D LEDs for display applications, has expanded its portfolio of Veeco thin film process equipment to support the development and production of advanced 3D micro-LEDs. Aledia cited Veeco’s proven leadership in compound semiconductor applications, GaN-on-silicon growth performance, and capability to grow a full range of high-quality epitaxial films as key factors influencing its decision. 
Veeco’s Propel™ Power GaN MOCVD system is designed specifically for the power electronics industry. Featuring a single-wafer reactor platform, capable of processing six- and eight-inch wafers, the system deposits high-quality GaN films for the production of highly efficient power electronic devices.

“We have been impressed with the performance of Veeco’s Propel™ GaN MOCVD platform for large-wafer 3D LED production, and naturally turned to Veeco again to support our advanced LED development,” said Philippe Gilet, co-founder and CTO of Aledia. “Veeco’s solutions meet our rigorous material quality and system delivery requirements along with unmatched material flux stability and repeatability. We are excited to take the next step with them in producing next-generation 3D micro-LEDs.”

The collaboration between Aledia and Veeco reflects the immense promise of micro-LEDs and other advanced LEDs for the future of displays. Micro-LEDs offer high efficiency, brightness and reliability benefits with shorter response time, enabling lighter, thinner and flexible displays with energy saving advantages for applications such as wearables, smartphones, automotive, signage/large TVs, augmented reality/virtual reality, etc. According to a recent Yole Développement report, there have been close to 1,500 patents filed related to micro-LED display from 125 different companies, with the bulk of activity occurring after 2012.

“With the significant shift toward exploration of micro-LEDs for use in next-generation displays, leaders like Aledia are turning to Veeco,” said Gerry Blumenstock, senior vice president and general manager of Veeco’s compound semiconductor business unit. “Veeco’s proven materials engineering expertise puts us in a unique position to offer innovative thin film deposition technologies for customers tackling tough compound semiconductor research, development and production challenges.”

Veeco will exhibit and present at the CS International Conference, March 26-27, 2019 in Brussels, Belgium. Mark McKee, director of product marketing for Veeco’s MOCVD business unit, will present “Accelerating Photonics Growth through Advances in High Performance As/P MOCVD and Wet Processing Technology,” on March 27, 2019 at 9:50 a.m. CET.

Saturday, March 16, 2019

VLSIresearch released its list of the top Semiconductor Equipment Suppliers for 2018 shown big wins for Japanese OEMs

VLSI Research report well above average growth for ASML (NL), Tokyo Electron (JPN), Advantest (JPN), Kokusai (JPN), Daifuku (JPN) and Canon (JPN) so a big win for Japan and the Netherlands last year. All Japanese companies outperform the market growth 2018!

Dan Hutchenson: "VLSIresearch released its list of the top Semiconductor Equipment Suppliers for 2018. Notable shifts were TEL passing Lam to take the top spot. Advantest past Screen for 7th with the highest growth of any chip equipment manufacturer. While ASM Pacific passed SEMES. For details, see: https://lnkd.in/gDxccnX

Most growth is seen in Litho as for each Immersion or EUV tool that is installed a bunch of Tokyo Electron tools come as well like e.g. the TEL Track platform.

With respect to ALD, judging by ASMI, TEL and Kokusai it seems that ALD was able to capture all of the growth in 2018 and maybe a bit more. In April the Japanese companies start their 2018 annual reporting so then we will know more for now we have the ASMI report to study (LINK).

Friday, March 15, 2019

Samsung’s GAA Transistor, MBCFET™ aims at Reduced Size and Increased Performance

While chipmakers are struggling with the FinFET based chip production below 5 nm process nodes, Samsung has planned to opt for GAA (gate all around) architecture. Samsung’s GAA redesigns the transistor, making it more power-efficient and better-performing than the existing Multi Bridge Channel FET (MBCFET™) that utilize stacked nanosheets. 
Samsung’s patented MBCFET™ is formed as a nanosheet, allowing for a larger current and simpler device integration. It allows to reduce the operating voltage below 0.75 V that had been extremely difficult with FinFET. This yields to 50% less power consumption or 30% more performance at 45% less chip area compared to 7 nm FinFET technology. Also, Samsung's GAA technology is compatible with current FinFET production line that means the today's fab running on mature process tools and methodology can be utilized for GAA transistors. Here is the infographic to learn more about how Samsung’s GAA is advancing the future of semiconductor technology.

Source: Samsung LINK

Written by : Abhishekkumar Thakur and Jonas Sundqvist

Awesome ALD & CVD TECHCET Critical Materials Reports(TM) and Market Briefs

TECHCET Critical Materials Reports(TM) and Market Briefs

TECHCET CA LLC is an advisory services firm focused on materials supply-chain market analysis and technologies for electronic device markets. Now integrated with the Critical Material Council (CMC), TECHCET works with leading IC fabricators to solve supply-chain issues by way of CMC activities, Critical Material Reports™ (CMRs), Analyst meetings, and other services. Favorite topics include Silicon wafers, ALD/CVD precursors, CMP consumables, Gases, Photoresists, Metals/chemicals, Wet chemicals and China. For additional information about CMRs or CMC membership please contact us by clicking here,  call +1-480-332-8336, x 1, or go to www.techcet.com or www.cmcfabs.org.

CVD/ALD High K Metal Precursors – NEW!

The High K / ALD Metal Precursors report provides information on the applications and markets associated with front end and back end of line precursors used to produce high dielectric constant (K) dielectrics and atomic layer deposition metal oxides and nitrides.

Dielectric Precursors 2018 – Just Released!

The Dielectric Precursors Report provide detailed market, supply chain and technology trend information required for anyone developing strategy for their business, be it a materials supplier or semiconductor chip manufacturer. Precursor types include, gapfill, ILD, low K, and multi-patterning.

Market Briefs – Precursor Bulk Delivery Systems

Coming Soon – Detailed report about the precursor bulk delivery systems

Market Briefs – Precursor Development – ALD / CVD Systems and Precursors

The report details about the Precursor Development in ALD/CVD Systems and Precursors

Market Briefs – Precursor Development – How to take a precursor from lab to fab

Coming Soon – The precursor development briefing explains all about how to take it from lab to fab.

Thursday, March 14, 2019

Edwards announces the new iXH Mk2 Series

BURGESS HILL, England--(BUSINESS WIRE)--Mar 14, 2019--Edwards announces the new iXH Mk2 Series – a high efficiency, low-power, ultra harsh duty dry pump that meets today’s semiconductor process requirements and addresses tomorrow’s emerging application challenges in the semiconductor, display, LED and solar PV manufacturing processes. Edwards will showcase the new iXH Mk2 solution at SEMICON ® China, taking place March 20-22, SNIEC, Shanghai (booth 1309 FPD CHINA).
“The new iXH Mk2 dry pump provides an even longer service life than previous generations for the harshest of processes. It can also provide significant improvements in power efficiency,” said Al Brightman, Sr. Product Manager, Edwards. “Leveraging 100 years of technology innovation, we have ‘reset the bar’ for harsh process capability, reliability and low cost-of-ownership. The iXH reduces the environmental impact of some of the harshest processes used in semiconductor manufacturing.”

Stop by the booth to learn how the iXH Mk2 solves emerging process challenges in high-k, low-k, SACVD, LPCVD, ALD, TCO, GaN and EPI. Further information about Edwards can be found at www.edwardsvacuum.com.

Atomic Layer Deposition System to Drive Renewable Energy Innovation

March 14, 2019 : The Sharp Group at Walter Schottky Institute Adopts Veeco’s Fiji F200 ALD System for Advancement of Functional Semiconductors and Catalysts

PLAINVIEW, New York — Veeco Instruments Inc. today announced that The Sharp Group at Germany’s Walter Schottky Institute (WSI) has taken delivery of Veeco’s Fiji® F200™ Plasma-Enhanced Atomic Layer Deposition (PE-ALD) system. As a leader in the fabrication and characterization of functional semiconductors and catalysts, The Sharp Group will leverage the Fiji system as an integral part of its discovery and material development efforts for applications in renewable energy conservation. 

“The development of renewable energy solutions calls for increasingly complex thin films and nanostructures, and to advance our work in this area requires an approach that is adaptable for a wide range of deposition techniques,” said Professor Ian Sharp, Ph.D., head of The Sharp Group at WSI. “Veeco not only has the requisite technical expertise but also offers invaluable scientific support. With the Fiji ALD system purchase, we’ve made a valuable and long-lasting partnership.”

The Fiji system is a flexible, single-wafer ALD reactor designed to deliver best-in-class performance for both thermal and plasma-enhanced ALD processes. Its demonstrated ability to precisely control the composition, structure and phase of multicomponent materials is critical to The Sharp Group to accelerate energy conversion mechanisms and direct function properties. Veeco has installed over 550 ALD systems, more than any other R&D supplier, at leading universities and customer facilities worldwide. Backed by Veeco’s global service team, the company’s ALD portfolio includes the Fiji, Savannah®, Phoenix® andFirebird™ systems to support a full range of R&D and production applications.

“New materials engineering challenges and applications arise every day, making Veeco’s ALD platforms ideal for those seeking the most versatile plasma-enhanced systems and thermal tools available,” added Ganesh Sundaram, Ph.D., vice president of applied technology for Veeco’s ALD group. “We anticipate an extremely productive collaboration with Professor Sharp and his team at WSI as they develop new technologies for sustainability and energy innovation.”

Veeco will exhibit and present at the EFDS ALD for Industry 2019 conference, March 19-20 in Berlin, Germany. Dr. Ganesh Sundaram’s workshop presentation, “ALD Use for Decorative Applications,” is scheduled for 11:10 a.m. CET on Wednesday, March 20, 2019.

Meyer Burger announces record HJT cells with efficiencies over 24%

At the PV CellTech conference in Penang, Malaysia from 12 – 13 March 2019, Meyer Burger CTO, Dr Gunter Erfurt, will speak to two leading technology topics – Heterojunction and Passivated Contacts.

Heterojunction – Meyer Burger’s flagship technology

At PV CellTech 2019, international PV industry leaders will discuss key issues driving the development of solar cell production in the coming years. Meyer Burger CTO, Dr Gunter Erfurt, has been invited to present to a high-level session focusing on Heterojunction (HJT) cell expansion and its potential as a breakthrough technology for multi-gigawatt mass production in 2019. With its focus on the development of industrialized high efficiency Heterojunction manufacturing solutions, Meyer Burger has already achieved HJT cells with recent record efficiencies of over 24.2% on its standardized HJT equipment. A technology roadmap for HJT cells with efficiencies towards 25% is already in place at Meyer Burger. During his presentation, Dr Erfurt will include an update on Meyer Burger’s successful SWCT™ cell connection technology for which over 1 GW has already been sold.

Dr Erfurt was also asked to speak on passivated contact solar cells (also known as TOPCon or monoPoly®) and what is required for this technology to become a mainstream offering in the PV industry during the keynote session at PV CellTech. Today the prevailing mainstream technology in the photovoltaic market is PERC (Passivated Emitter Rear Contact) cell coating technology. Current PERC solar cells achieve efficiency levels of between 21% and 22% but there are significant technology limitations, which affect the potential for further increases in PERC cell efficiency. Passivated contact technology can offer an evolutionary upgrade to existing PERC mass production capacities, taking them to efficiency levels around 23%.

The heterojunction technology combines the advantages of crystalline silicon solar cells and thin film technologies enabling solar cell to reach higher degrees of efficiency at a lower cost of production (Youtube). 

CAiA® – Meyer Burger’s new platform to drive TopCon industrialization

For the past two years, Meyer Burger has been developing a platform for the industrialized manufacture of solar cells with passivated contact technology for both n- and p-type wafers. In trials with customers, the CAiA® platform has already produced cells with efficiencies slightly above 23% and the first lab machine has already been sold to a strategic customer and technology partner, with initial installations planned by midyear. The CAiA® ideally complements Meyer Burger’s industry leading MAiA® and FABiA® cell coating portfolio with both current as well as new customers benefitting from a combination of the CAiA® together with either the MAiA® or FABiA® as the optimal solution for the manufacture of passivated contact cells. Meyer Burger’s SWCT™ module technology is the ideal solution not only for HJT modules but also for the most cost-effective production of solar modules with passivated contact cells.

Patent infringement claim by Hanwha Q Cells

Recently solar module manufacturer, Hanwha Q Cells, submitted a patent infringement claim against several Asian solar module producers for the use of Atomic Layer Deposition (ALD) passivation technology. Meyer Burger’s MAiA® and FABiA® cell coating platforms use the company’s proprietary Plasma Enhanced Chemical Vapor Deposition (PECVD) passivation technology, which is the leading alternative technology to ALD and thus not in the scope of the patent infringement claim by Hanwha Q Cells.

Tuesday, March 12, 2019

Critical Materials Conference - Early Bird Reg Ending 4th Annual CMC Conference April 25-26 in Saratoga Springs, New York

ALD Folks - this year we have a good number of ALD related talks : Air Liquide, Schrödinger, TECHCET, Fraunhofer, Applied Materials, Tokyo Electron and more

Review—Cobalt Thin Films: Trends in Processing Technologies and Emerging Applications

Here is a fantastic revie on Cobalt ALD and CVD from SUNY Polytechnic Institute and Gelest and it is fee to download - Thanks for sharing this one Henrik Pedersen!
Editors' Choice—Review—Cobalt Thin Films: Trends in Processing Technologies and Emerging Applications
Alain E. Kaloyeros, Youlin Pan, Jonathan Goff and Barry Arkles
ECS Journal of Solid State Science and Technology, 8 (2) P119-P152 (2019) (LINK)

Cobalt metallic films are the subject of an ever-expanding academic and industrial interest for incorporation into a multitude of new technological applications. This report reviews the state-of-the art chemistry and deposition techniques for cobalt thin films, highlighting innovations in cobalt metal-organic chemical vapor deposition (MOCVD), plasma and thermal atomic layer deposition (ALD), as well as pulsed MOCVD technologies, and focusing on cobalt source precursors, thin and ultrathin film growth processes, and the resulting effects on film composition, resistivity and other pertinent properties.
Open access article distributed under the terms of the Creative Commons Attribution 4.0 License (CC BY, http://creativecommons.org/licenses/by/4.0/)

Monday, March 11, 2019

RASIRC Presents Process Control ‘Ins and Outs’ for Optimized Mass Delivery

New data reveals optimization opportunities in throughput and precursor utilization

San Diego, Calif – March 14, 2019 – Dynamic gas generation leader RASIRC will present new data on process optimization for low temperature ALD at the upcoming ALD for Industry 2019 conference. The presentation entitled “Optimization of Delivered Mass from Low Vapor Pressure Precursors through Process Control” is scheduled for 13:50 on Wednesday March 20 as part of the ALD Precursor Development session. RASIRC is a Gold Sponsor and exhibitor at the event held March 19-20 in Berlin, Germany. 
“Controlled delivery of low vapor pressure liquids is challenging, but necessary, for low temperature thermal ALD,” said Jeffrey Spiegelman, President and Founder. “Our data shows that both throughput and precursor utilization can be optimized through precise control of the many variables involved in the process, resulting in consistent and regulated vapor.”

ALD for Industry is an annual event sponsored by the European Society for Thin Films (EFDS). New materials and complex 3D structures now common in many semiconductor and display devices require deposition at the atomic layer and at low temperature. RASIRC is a leader in controlled delivery of highly reactive oxidants and nitrides for low temperature thermal ALD.

Spiegelman will present findings from automated test programs that simulated process recipes in common ALD conditions. Data collected quantified mass flowrates at different process conditions. Spiegelman will also be available to answer questions and discuss findings at the RASIRC exhibit.

About RASIRC Products

BRUTE® Peroxide is a novel oxidant that improves passivation and nucleation density at film interfaces when compared to other oxidants. Surface functionalization is denser and initiation is faster using this anhydrous hydrogen peroxide gas compared with alternatives. This high reactivity allows for less chemistry use and higher throughput due to shorter required purge times.

BRUTE® Hydrazine enables conformal growth with low wet-etch-rates for SiN. BRUTE® Hydrazine gas is virtually water free and has a relatively high flash point for safer handling. Highly reactive, BRUTE Hydrazine creates uniform nitride deposition for advanced materials at low temperature.

RASIRC’s Peroxidizer® provides high volumes of reactive H2O2/H2O mixtures for high throughput ALD. This reactive gas generator is ideal for roll-to-roll ALD coatings that require high speed deposition at reduced temperatures.

Additional RASIRC products include the RainMaker Humidification System (RHS) and the Hydrogen Peroxide Steamer (HPS). The RHS generates water vapor for oxidation applications and the HPS provides surface cleaning, preconditioning, wet thermal oxidation and residual carbon removal.


RASIRC specializes in products that generate and deliver gas to fabrication processes. Each unit is a dynamic gas plant in a box — converting common liquid chemistries into safer and reliable gas flow for most processes. RASIRC technology delivers water vapor, hydrogen peroxide gas and hydrazine gas in controlled, repeatable concentrations. RASIRC gas delivery systems, humidifiers, and closed loop humidification systems are critical for many applications in semiconductor, photovoltaic, pharmaceutical, medical, biological, fuel cell, and power industries. Call 858-259-1220, email info@rasirc.com or visit http://www.rasirc.com.

Saturday, March 9, 2019

What Will Come After V‐NAND—Vertical Resistive Switching Memory?

Here is a hot paper from Hwang in Advanced Materials on what may come after V-NAND/3DNAND Flash meory architecture. In the case of Vertical ReRAM we can assume that there are numerous opportunities for funky ALD materials and processes!
What Will Come After V‐NAND—Vertical Resistive Switching Memory?
Kyung Jean Yoon, Yumin Kim, Cheol Seong Hwang
Version of Record online:28 February 2019
Pathways to overcome the scaling limitation of vertical NAND flash memory (V‐NAND), the present market leading nonvolatile memory, providing new materials and array structure suggestions, are provided. Specifically, the favorable aspects of a vertical resistive random access memory (V‐ReRAM) structure, such as areal density and decoding schemes, are highlighted in comparison with the commercialized nonvolatile memories: 3D‐Crosspoint and V‐NAND.

Longi rejects Hanwha Q Cells allegations and provides details on patent issue

[PV Magazine] The Chinese monocrystalline module maker said it had not been notified of the legal action by its Korean rival. Longi claimed there is considerable uncertainty over the validity of the patents at the root of the lawsuits, which the Chinese defendant says relate to ALD technology. Longi says it uses PECVD technology for cell production.

Hanwha on Tuesday said it had filed lawsuits with the U.S. International Trade Commission (US ITC) and the U.S. District Court in Delaware claiming Longi, Jinko and Norwegian module manufacturer REC infringed its U.S. Patent No. 9,893,215, by using Hanwha’s passivation technology to increase the efficiency and performance of their solar cells.
“The patent family used by Hanwha Q Cells in the complaint is acquired through multiple transfers and transactions from other research institutes; [which] act as a co-owner to the patents,” Longi said. “Currently, several opposition procedures against the patents have been filed, at least in Europe, and there is considerable uncertainty with regards to the validity of the patent rights.”

Source: PV Magazine LINK

Western Digital and Toshiba have developed a 128-layer 3D NAND die with TLC (3bits/cell) cell formatting and 512Gbit capacity.Acoording to etimates and modelling WD-Toshiba has the industry’s highest NAND density and models the suppliers at an 85 per cent wafer yield - thanks Terry Francis for sharing.

Wednesday, March 6, 2019

Achtung High-k - Novel High-k Workshop 2019 at NaMLab

High k Workshop 2019

NaMLab invites to the Novel High-k Application Workshop on June 11th and 12th, 2019. New challenges offered by the application of high-k dielectric materials in micro– and nanoelectronics were discussed by more than 90 participants from industry, research institutes and universities. 
In this series of annual workshops NaMLab has created a stimulating platform for application-oriented scientists to exchange ideas and discuss latest experimental results on MIM-capacitors, process technology, leakage & reliability as well as characterization of high-k dielectrics integrated in silicon based micro– and nanoelectronics. The ferroelectric properties of doped HfO2 and ZrO2 were discovered more than 10 years ago. On the second day of the workshop, root causes for the formation of this so far unknown phase will be discussed together with the application of these films.
For more information: LINK

Synthesis of Doped, Ternary, and Quaternary Materials by ALD

A review by Adriaan J. M. Mackus and the Bent Group at Stanford "Synthesis of Doped, Ternary, and Quaternary Materials by Atomic Layer Deposition" LINK

Picture from Twitter (https://twitter.com/ChemMater/status/1103368831337000960https://twitter.com/ChemMater/status/1103368831337000960https://twitter.com/ChemMater/status/1103368831337000960https://twitter.com/ChemMater/status/1103368831337000960https://twitter.com/ChemMater/status/1103368831337hts://twitter.com/ChemMater/status/1103368831337000960)

Applied Materials - Moore’s Law and the Shift from Near-Memory to In-Memory Compute

Beyond Von Neumann: Moore’s Law and the Shift from Near-Memory to In-Memory Compute
by David Thompson
Feb 27, 2019

In reflecting a little bit on my last blog, it probably would have been good to do a little bit of explaining around what Von Neumann computing is, before discussing what’s beyond it. However, a bit of background on Moore’s Law is in order first.

Tuesday, March 5, 2019

Welcome to Berlin for the biggest ALD Exhibition in Germany since ALD2012 in Dresden!

Welcome to Berlin for the biggest ALD Exhibition in Germany since ALD2012 in Dresden!

ALD for Industry – 3rd Workshop and Tutorial, 19-20 March 2018 in Berlin LINK

A topical workshop with focus on industrialization and commercialization of ALD for current and emerging markets

Atomic Layer Deposition (ALD) is used to deposit ultraconformal thin films with sub-nm film thickness control. The method is unique in the sense that it employs sequential self-limiting surface reactions for growth in the monolayer thickness regime. Today, ALD is a key technology in leading edge semiconductor technology and the field of application in other leading-edge industries is increasing rapidly. According to market estimates the equipment market alone is currently at an annual revenue of US$ 1.5-1.7 billion (2017) and it is expected to double in the next 4-5 years.

In a European context ALD was invented independently twice in Europe (Russia & Finland) and since the last 15 years Germany has grown to become one of the strongest European markets for ALD in R&D, chemicals, equipment and end users.

The Event will focus on the current markets for ALD and addresses the applications in semiconductor industry, MEMS & Sensors, Battery Technology, Medical, Display, Lightning, Barriers and Photovoltaics.

Friday, March 1, 2019

The hardest, thinnest, most wear-resistant coatings yet by PEALD titanium and vanadium nitrides

[Lehigh University, Story by Christine Fennessy, shortened] In August 2018, the National Science Foundation (NSF) granted Strandwitz, an assistant professor of materials science and engineering, and Krick, an assistant professor of mechanical engineering and mechanics, a Grant Opportunities for Academic Liaison with Industry (GOALI) award to work with an industry partner to study what exactly makes these nitride films so good.

Low temps, conformality, and precision yield a diamond-like toughness

Titanium and vanadium nitride films are already known to be extremely hard and wear resistant. Traditionally, they’re grown by sputtering, pulsed laser deposition, or chemical vapor deposition methods. In a first, the group’s collaborators at Veeco/CNT grew their nitride films using plasma-enhanced atomic layer deposition, or PE-ALD. Veeco/CNT is a leading supplier of ALD systems based in Waltham, Massachusetts. 

“In atomic layer deposition, you’re building one layer of atoms at a time,” says Strandwitz. “It’s a technique that’s already used in microelectronics, like on those in your phone, where you might need a film that is exactly three nanometers thick. If the film is four, or two, nanometers thick, your transistor switch won’t work. And you have a few billion transistors in your phone.”
Source: Lehigh University (LINK