Saturday, March 9, 2019

What Will Come After V‐NAND—Vertical Resistive Switching Memory?

Here is a hot paper from Hwang in Advanced Materials on what may come after V-NAND/3DNAND Flash meory architecture. In the case of Vertical ReRAM we can assume that there are numerous opportunities for funky ALD materials and processes!
 
What Will Come After V‐NAND—Vertical Resistive Switching Memory?
Kyung Jean Yoon, Yumin Kim, Cheol Seong Hwang
Version of Record online:28 February 2019
https://doi.org/10.1002/aelm.201800914
 
Pathways to overcome the scaling limitation of vertical NAND flash memory (V‐NAND), the present market leading nonvolatile memory, providing new materials and array structure suggestions, are provided. Specifically, the favorable aspects of a vertical resistive random access memory (V‐ReRAM) structure, such as areal density and decoding schemes, are highlighted in comparison with the commercialized nonvolatile memories: 3D‐Crosspoint and V‐NAND.

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