Thursday, July 18, 2024
Chipmetrics Launches New Test Chips for Advanced Atomic Layer Processes
Thursday, July 11, 2024
Chipmetrics' Metrology Workshop
Sunday, June 16, 2024
Boosting the Future: Increased ALD Use Paves the Way for Advanced GAAFET Technology
The Biden administration is considering a complete ban on the export of chips utilizing Gate All-Around Field Effect Transistor (GAAFET) technology to China, Bloomberg reports (LINK). The rationale behind this potential ban is the concern that such advanced transistors could be leveraged for military applications and artificial intelligence (AI) advancements by China. This move follows previous restrictions from 2022, when the U.S. barred its Electronic Design and Automation (EDA) companies from selling tools necessary for GAAFET development to China. In addition, advanced chip exports from companies like Nvidia were restricted, with these measures being progressively tightened and expanded over time.
Atomic Layer Deposition (ALD) is celebrating its 50th anniversary in 2024. The anniversary marks 50 years since Dr. Tuomo Suntola and his colleagues filed the first patent for Atomic Layer Epitaxy in 1974, which laid the foundation for ALD technology. This milestone will be celebrated at various events, including the ALD 2024 conference, where Dr. Suntola is expected to deliver the opening remarks .
The production of GAAFETs requires a significant increase in the use of ALD technology - maybe up to 40% more according to ASM. ALD is essential for creating the ultra-thin, uniform films needed for GAAFET structures, ensuring high-quality, defect-free layers that are critical for advanced transistor performance. This technology enables precise control over the deposition process, crucial for developing high-k dielectrics and other materials that enhance GAAFET performance and efficiency. As the semiconductor industry now transitions from FinFET to GAAFET technology, leveraging ALD's capabilities is vital for maintaining and advancing Moore's Law, enabling more powerful and energy-efficient chips using existing manufacturing infrastructure
Applied Materials has outlined next-generation tools essential for producing 3nm and GAA transistors, such as those in Samsung's upcoming 3GAE and 3GAP technologies. These advanced tools address the complexities of GAA transistor manufacturing, including precise lithography, epitaxy, and selective materials removal. Applied's Producer Selectra Selective Etch IMS tool is pivotal in defining channel width without damaging surrounding materials, while the Centura Prime Epi tool ensures clean deposition of Si and SiGe nanosheets. Additionally, their Integrated Materials Solution (IMS) systems integrate atomic layer deposition (ALD), thermal steps, and plasma treatments to optimize the gate oxide stack, enhancing performance and reducing gate leakage. These innovations are crucial as they enable higher performance, lower power consumption, and greater transistor density, aligning with the industry's move from FinFET to GAA technology.
Today GAA transistors are currently in mass production only by Samsung, which offered the technology to customers with its 3-nanometer process in 2022. Intel is set to follow, producing GAAFET on its 2-nanometer process expected to be available in its products later this year. TSMC, the market leader, plans to introduce GAAFET with its own 2 nm process in 2025. The GAAFET technology itself is not inherently suited for AI or military applications but represents an evolution in transistor design, enabling denser packing of transistors as lithography equipment and manufacturing processes advance. This technology shift, akin to transitioning to a new node, typically results in either reduced power consumption or improved performance by 15-25%.
The improvements facilitated by GAAFET could significantly enhance the capabilities available to China. SMIC, China's largest contract manufacturer, currently produces chips on a 7 nm process and is believed to be capable of reaching at least 5 nanometers with existing tools. The combination of this process with GAAFET could theoretically prevent China from falling too far behind Western advancements. However, China has been effectively shut out from developing GAAFET using tools from leading EDA companies, all of which are American. Additionally, the Dutch company ASML, dominant in the lithography equipment market, has not sold its EUV (Extreme Ultraviolet) machines to China and faced further restrictions in 2023 on selling its advanced DUV (Deep Ultraviolet) equipment. In April 2024, ASML took another step in the tech war against China by announcing that it would no longer service existing equipment in China, potentially crippling the country's semiconductor manufacturing capabilities. The specific details of the new export bans are still unclear, but Reuters notes that initial proposals have faced criticism from the U.S. semiconductor industry for being overly broad and extensive.
Source: USA överväger ytterligare GAAFET-sanktioner mot Kina – Semi14, www.ASM.com, Applied Materials Outlines Next-Gen Tools for 3nm and GAA Transistor Era (anandtech.com), Atomic layer deposition, next-gen transistors, and ASM (techfund.one)
Monday, June 10, 2024
NCD Co., Ltd. has supplied ALD equipment for manufacturing perovskite solar cells to Korea Electric Power Corporation
About NCD Co., Ltd:
NCD Co., Ltd. is a rapidly growing Korean company specializing in the development and manufacturing of ALD (Atomic Layer Deposition) and CVD (Chemical Vapor Deposition) equipment. Founded in 2010 and based in Daejeon, NCD focuses on providing advanced equipment, process development, coating services, and consulting for industries such as solar cells and OLED displays. Their innovative solutions aim to enhance efficiency and productivity in high-volume manufacturing.
For more information, visit their official website: NCD Tech.
Thursday, April 25, 2024
Fundamentals of ALD course – 6-7 June 2024, University of Bath, UK
The "Fundamentals of ALD" course, scheduled for June 6-7, 2024 at the University of Bath, UK, targets newcomers and professionals seeking to deepen their understanding of atomic layer deposition (ALD). It will cover the theoretical and practical aspects of ALD, including surface chemistry, process configurations, reactor design, and material properties. Professors Gregory Parsons, Seán Barry, and Erwin Kessels will lead the course, offering both foundational insights and advanced techniques relevant to laboratory and industrial applications.
The course will run from noon-to-noon across two days, featuring seven detailed lectures interspersed with Q&A sessions and a mixer event on the first evening. Registration is open until May 24, 2024, with fees varying for industry professionals, academia members, and students. The event will take place in the “6 West South” building at the University of Bath, and participants are advised to arrange their own accommodation, with several hotel suggestions provided near the venue.
Link: Fundamentals of ALD course – 6-7 June 2024, University of Bath, UK – ALDAcademy
ASM a revenue of €639 million Q12024 - driven significantly by sales in Atomic Layer Deposition (ALD) and Epitaxy (Epi) technologies.
The company reported a revenue of €639 million, at the upper end of their guidance, driven significantly by sales in Atomic Layer Deposition (ALD) and Epitaxy (Epi) technologies.
- Gross margin increased to 52.9%, largely due to strong sales performance in the Chinese market.
- New orders reached €698 million, marking a 10% increase from the previous year, mainly driven by the foundry sector. The company expects continued demand for gate-all-around technology, with significant orders anticipated in the second half of the year.
- Despite a slowdown in certain segments like power/analog/wafer, ASM International maintains a strong financial position with a cash reserve of €720 million at the end of the quarter. Sales in China are expected to remain robust.
Monday, April 15, 2024
Ahead of the 50 Years of ALD celebration in Helsinki, learn about the origins, growth and future of the AVS ALD Conference with Greg Parsons and Steve George
A New Zr Precursor Enhances Wafer-Scale Zirconium Dioxide Films
A new class of Zirconium (Zr) precursor, featuring boratabenzene ligand, has been developed by a team led by Mohd Zahid Ansari at Yeungnam University, enabling the production of highly conformal ZrO2 thin films via Atomic Layer Deposition (ALD). This innovation, detailed in a recent study published in Science Advances, uses tris(dimethylamido)dimethylamidoboratabenzene zirconium and oxygen as reactants to achieve amorphous ZrO2 films at temperatures ranging from 150–350 °C on SiO2/Si substrates.
The new approach decouples the conventional ALD process, enhancing the deposition temperature window and achieving a growth per cycle of 0.87 Å, which surpasses previous methods using different Zr precursors. The films exhibit extreme conformality with complete step coverage, even on substrates with complex topographies, marking a significant advancement in semiconductor fabrication.
Sunday, April 14, 2024
Hanwha to supply ALD Equipment for Molybdenum Deposition for Memory Applications
According to Korean media, Hanwha Precision Machinery is developing a new type of thermal atomic layer deposition (ALD) equipment for depositing molybdenum, which is emerging as a superior material for metal gates in next-generation semiconductors due to its lower resistivity and lack of fluoride residue. The new technology, still in the prototype stage and expected to take three years to commercialize, uses molybdenum dichloride dioxide (MoO2Cl2) as a precursor. This initiative marks Hanwha's expansion into the semiconductor fabrication equipment market, collaborating with industry giants like SK Hynix on future projects, including the development of hybrid bonding equipment for high bandwidth memory production.
At two recent conferences, EFDS ALD For Industry and CMC 2024 this week in Phoenix, Air Liquide presented HVM ready solution for MoO2Cl2 sub fab delivery. They also confirmed that it is already in HVM. Other sources claim that Mo is also in HVM for DRAM. However, no reverse engineering is publicly available as of to day.
Apple Partners with Taiwanese Largan to Advance iPhone Camera Plastic Lenses Using ALD Technology - Updated
Apple has been replacing the glass lenses in future iPhone cameras with advanced plastic lenses that have successfully passed customer testing. Two years prior, Apple's supplier Largan invested heavily in ALD (Atomic Layer Deposition) deposition machines specifically for this purpose, costing over $13.9 million each. This investment paid off with significant business from the coating of lenses for the iPhone 15 series, which introduced a periscope lens in its Pro model—a first for iPhones.
Looking ahead, there's anticipation that these new plastic lenses might feature in the iPhone 16 or 17. Largan's chairman, Lin Enping, confirmed the successful testing of a new plastic film, though it remains uncertain if it will be ready for the next iPhone release. This transition to plastic could potentially enhance camera durability, particularly by reducing lens flare and protecting the lenses from damage in case of a fall.
Speculation abounds that Apple might be the customer Lin referred to, although he did not specify. Market analysts highlight that a move to plastic lenses would not only signify a significant technological shift but also align with Apple's ongoing innovation in camera technology.
Update: Apple has used plastic lenses up to and including the iPhone 15 line-up – with one exception. The tetraprism lens used in the iPhone 15 Pro Max is a glass-plastic hybrid known as 1G3P – that is, one glass element, three plastic. This is a compromise designed to bring some of the quality gain from a glass element, without the disadvantages of an all-glass design. Many of the elements in a lens are there purely to correct for various types of distortion. Using at least one glass element eliminates some of those distortions, allowing for fewer elements. Apple's Glass And Plastic Hybrid Lens In The iPhone 15 Pro Max Will Spark A Trend For The Competition To Follow (wccftech.com)
The iPhone 16 Pro is tipped to receive the 5x optical zoom tetraprism lens currently available only on the largest iPhone 15 Pro Max model. This lens will bring Apple’s current most powerful zoom capabilities to the smaller of the two Pro models. However, according to another rumor from last year, the iPhone 16 Pro Max may pull ahead again with an even stronger “ultra-long” telephoto camera. New Apple Leak Reveals Major iPhone 16 Pro Camera Upgrade (forbes.com)
Largan Precision Co., Ltd., based in Taiwan, is a leading manufacturer of optical lens modules, primarily for smartphones and cameras. Renowned for supplying high-quality camera lenses for Apple's iPhone, Largan specializes in high-end lens modules. The company has invested heavily in advanced technologies such as atomic layer deposition (ALD) to enhance lens durability and image quality. Largan's significant production capacity and commitment to innovation make it a key player in the optics industry, pivotal in advancing smartphone camera technology. This role is critical for meeting the high demands of major smartphone manufacturers like Apple.
Rémi Maillat's Watch Brand Launches €145,500 Titanium Timepiece with Nature-Inspired, ALD-Coated Green Dial
Friday, March 22, 2024
Surfs are going to be up at the PRiME Symposium G01 on ALD & ALE Applications 20, in Honolulu | Oct. 6-12, 2024
Tuesday, March 19, 2024
Tokyo Electron ALD of AlN Thin Films Report Unprecedented Uniformity on Large Batch 200 mm Tool
In the rapidly evolving world of semiconductor technology, achieving high uniformity in thin films is important for enhancing production yield and device performance. In a study led by Partha Mukhopadhyay and his team at Tokzo Electron has made significant strides in this domain, using ALD of aluminum nitride (AlN) thin films on a 200 mm large batch furnace platform. AlN is particularly relevant for gallium nitride (GaN)-based power industry, where AlN's wide bandgap, high dielectric constant, and superior thermal conductivity make it an ideal choice for various applications, including UV LEDs, transistors, and micro-electromechanical systems.
The study's focus lies in its ability to maintain extraordinary uniformity across large batches of 200 mm wafers, achieving a thickness variation of less than 0.5 Å. This level of uniformity was obtained by optimizing the ALD process in a reactor capable of handling over 100 wafers, marking a significant achievement in high-volume production environments. The research examined the effects of deposition temperatures, film thicknesses, and different substrate types, including Si, quartz, and GaN/Si(111), on the material and optical properties of the AlN films.
One of the key findings was the identification of an optimal narrow temperature window between 300°C and 350°C for the deposition process, with 350°C being the sweet spot. The study also delved into the nuanced challenges of nucleation on different substrates, revealing that substrate-inhibited growth and a non-linear deposition rate are pivotal factors to consider. This understanding is crucial for maintaining uniformity in extremely thin films, which are sensitive to the underlying substrate's crystal orientation.
From a compositional standpoint, the development showcased the high purity of the AlN films, with negligible carbon and oxygen contamination. This purity is essential for the semiconductor industry, particularly for applications where chemical stability is critical. The study's rigorous material analysis, which included techniques like XPS and TEM, provided in-depth insights into the AlN films' structural and compositional integrity.
Optically, the AlN films demonstrated a bandgap of 5.8 eV, a key attribute for their use in optoelectronic applications. The research also highlighted the refractive index's dependence on film thickness and deposition temperature, offering valuable data for the design and optimization of optical devices.
In summary, this study represents a significant progress in ALD of AlN thin films, combining high throughput with exceptional film uniformity and quality.
Thursday, March 7, 2024
Aalto University in Finland Wins Major Grant for Eco-Friendly Semiconductor Technology
Aalto University, in close collaboration with key industry players including Applied Materials in Finland (Picosun), PiBond, and Volatec, has been awarded a significant grant by Business Finland for their groundbreaking project titled “New chemistries for resource-efficient semiconductor manufacturing”. This initiative is a part of the larger "Chip Zero" Ecosystem, spearheaded by Picosun, aiming to revolutionize the semiconductor industry by developing chips that boast zero lifetime emissions—a first in Finland's tech landscape.
Led by Professors Maarit Karppinen and Antti Karttunen from Aalto's Department of Chemistry and Materials Science, the project seeks to address the pressing environmental concerns associated with semiconductor manufacturing. With the industry's carbon footprint and resource consumption at an all-time high, this co-innovation venture promises to pave the way for more sustainable production methods.
Dr. Ramin Ghiyasi working in the CHEMI-SEMI project holding a silicon wafer after atomic layer deposition, Department of Chemistry and Material Science
The project's goals are ambitious yet crucial. By innovating new chemical processes and materials, the team aims to minimize the environmental impact of semiconductor fabrication. This includes the development of novel, eco-friendly precursors and solvents, enhancing material purification, and advancing recycling practices, as highlighted by Dr. Marja Tiitta from Volatec.
Dr. Thomas Gädda of PiBond emphasizes the importance of collaborative efforts in achieving these sustainability targets, underscoring the project's reliance on a synergy of expertise from academia and industry. This collaborative framework is expected to yield advancements in chemical usage, process optimization, and energy efficiency in semiconductor manufacturing.
With its comprehensive approach, combining experimental research with computational modeling, the project aspires not only to innovate within the confines of semiconductor technology but also to set a new standard for environmentally conscious manufacturing practices in the industry.
Source: Significant Grant for Greener Semiconductor Technology from Business Finland | Aalto University
Wednesday, February 28, 2024
ASM International: Spearheading Semiconductor Innovation in ALD, Epitaxy, and CVD Markets
“2023 was another successful year for ASM. Sales increased by 13% at constant currencies, despite softening market conditions, and marking the seventh consecutive year of double-digit growth.” said Benjamin Loh, CEO of ASM. “Revenue in Q4 2023 amounted to €633 million, in line with our guidance of €600-640 million and down compared to the level in Q4 2022. Revenue in the quarter was supported by strong sales in the power/analog/ wafer segment. Bookings at €678 million were slightly better than our expectation and were driven by GAA pilot- line orders and continued strength in China demand.
ASM's Leadership in the Growing ALD Market
According to ASM, the single wafer Atomic Layer Deposition (ALD) market is experiencing significant growth, with projections indicating an increase from $2.6 billion in 2022 to a range of $4.2 billion to $5.0 billion by 2027. This growth, characterized by a Compound Annual Growth Rate (CAGR) of 10-14% from 2022 to 2027, underscores the expanding role of ALD technology in semiconductor manufacturing. ASM International, a key player in the semiconductor industry, holds a dominant position in this market, commanding a share of over 55% throughout the forecast period.
Please note that this market assessment, most probably originally from TechInsights (prev. VLSI Research) does not include Large Batch furnace ALD, which historically have been about 30% of the total 300 mm ALD equipment market. The leaders in this segment are Tokyo Electron followed by Kokusai and ASM chose not to compete with its A412 ALD product line.
Driving Forces Behind ALD Market Expansion
The expansion of the ALD market is propelled by a series of technological advancements and increasing demands within the semiconductor sector. Key factors contributing to this growth include the industry's shift towards Gate-All-Around (GAA) technology, the necessity for advanced high-k gate dielectrics, and the precision required for threshold voltage tuning. Additionally, the development of sacrificial layers and the use of high aspect ratio Through-Silicon Vias (TSVs) are critical in advancing semiconductor manufacturing techniques. The application of metals and the adoption of selective ALD processes further accentuate the importance of ALD technology in modern semiconductor fabrication.
ASM's Strategic Positioning and Market Opportunities
ASM is well-positioned to capitalize on the opportunities presented by the burgeoning ALD market. The company's strategic emphasis on innovation, coupled with its comprehensive product portfolio, positions ASM as a frontrunner in meeting the evolving needs of the logic/foundry and memory segments of the semiconductor industry. The transition to advanced manufacturing technologies, such as GAA and high-k metal gate applications, presents significant growth avenues for ALD, with ASM at the forefront of this technological evolution.
To be more specific, the transition to GAA technology and the expansion in FinFET applications are set to significantly increase ASM's served available market by approximately US$400 million for every 100,000 wafer starts per month (WSPM). According to ASM, the equipment orders started to come in in the 2nd half of 2023. We can assume that this are orders from Samsung, TSMC and Intel. It is however about peculiar since Samsung had 3 nm GAA going already with yield in August 2023 and ASM is describing it as GAA pilot lines. Anyhow, come 2028 when all leading foundries including Rapidus in Japan are up and running GAAFETs, this additional market will be + USD 1.5 B as compared to if it would have been "only" FinFET technology - according to my back of the envelope calculations. For a company like ASM, with just below USD 3 B (2.6 B EUR) annual Revenue 2023 this is a huge thing. If this is not enough to go woah - add to that the GAAFET market is an upwards moving target and will continue to grow and looking ahead stacking of NMOS/PMOS will drive further demand for this type of ALD and Epi processes.
Expansion into the Epitaxy and CVD Markets
The Silicon Epitaxy (Si epi) market is also on a growth trajectory, with forecasts suggesting it will reach between $2.3 billion and $2.9 billion by 2027. ASM aims for a market share target of over 30%, focusing on both leading-edge and non-leading-edge segments. The leading-edge growth is driven by transitions to GAA technology and advancements in high-performance DRAM, while the non-leading-edge growth is buoyed by wafer power analog and strong momentum from ASM's Intrepid ESA. The epitaxy market is expected to see a Compound Annual Growth Rate (CAGR) of 3-8% from 2022 to 2027, with the leading-edge segment outpacing the overall market with a CAGR of 10-15%.
Regarding the SiC market, the investor presentation highlighted significant growth in power/analog/wafer revenue, almost doubling, primarily driven by robust demand in China. This growth was positively impacted by the consolidation of LPE (SiC Epitaxy), with sales comfortably exceeding the target of more than €130 million in 2023. This indicates ASM's strong performance in the SiC market and its successful integration and expansion in SiC epitaxy, aligning with the broader industry trend towards more advanced and efficient semiconductor materials.
Chemical Vapor Deposition (CVD) technology is another area of focus for ASM, particularly in the context of transitioning to new materials like Molybdenum, which is replacing traditional materials such as CVD Tungsten and PVD Copper in interconnect applications. This shift is indicative of the evolving needs within the semiconductor manufacturing process and highlights ASM's adaptability to changing market dynamics.
In summary, ASM's strategic initiatives in ALD, Epitaxy, and CVD technologies underscore the company's commitment to innovation and leadership within the semiconductor equipment market. Through a combination of market foresight, technological prowess, and strategic investments, ASM is well-positioned to capitalize on the growth opportunities presented by the evolving semiconductor landscape.
Tuesday, February 27, 2024
Applied Materials Unveils Cutting-Edge Patterning Technologies for Next-Gen Semiconductor Device Manufacturing
Applied Materials is leading the charge into the angstrom era of chipmaking, unveiling a suite of innovative solutions at the SPIE Advanced Lithography + Patterning conference. The company's focus is on overcoming the challenges posed by extreme ultraviolet (EUV) and high-NA EUV lithography, crucial for the production of chips at 2nm process nodes and below. Their approach integrates new materials engineering, metrology techniques, and pattern-shaping technology to enhance chip performance and yield.
To help overcome patterning challenges for leading-edge chips, Applied Materials offers a portfolio of technologies designed to complement the latest advances in lithography. The company’s newest innovations include the Producer® XP Pioneer® CVD patterning film, the Sym3® Y Magnum™ etch system, the Centura® Sculpta® pattern-shaping system and Aselta contour technology for design-based metrology.
Central to Applied Materials' advancements is the Sculpta® pattern-shaping technology, first introduced at the previous year's conference. Sculpta has seen growing adoption among top logic chipmakers for its ability to refine EUV patterning, notably reducing double patterning steps and mitigating defects such as bridge defects. This technology not only lowers patterning costs but also improves chip yields, showcasing its increasing importance in the semiconductor manufacturing landscape.
In response to the issue of EUV line edge roughness, Applied Materials has launched the Sym3® Y Magnum™ etch system. This innovative system employs a combination of deposition and etch processes within a single chamber to smooth out rough edges before etching, thereby enhancing yield and chip performance.
Additionally, the company introduced the Producer® XP Pioneer® CVD patterning film, designed for high-fidelity pattern transfer with enhanced resistance to etch chemistries. This film is especially significant for advanced process nodes, offering improved sidewall feature uniformity and co-optimization with both Sculpta and the Sym3 Y Magnum system for superior patterning capabilities.
To address the critical issue of feature alignment across chip layers, Applied Materials has acquired Aselta Nanographics, integrating its design-based metrology with Applied's leading eBeam systems. This integration enables a comprehensive metrology solution that significantly enhances feature placement accuracy, crucial for optimizing chip performance and yield.
Applied Materials' expansion of its patterning solutions portfolio underscores its commitment to advancing semiconductor technology. By addressing key challenges in EUV lithography and introducing groundbreaking technologies, the company is setting new standards for the industry, driving forward the capabilities of angstrom era chipmaking.
DOE Invests $4M in Argonne's ALD Tech to Develop Energy-Efficient Semiconductor Devices
Monday, February 26, 2024
PRiME 2024: A Global Convergence on Atomic Layer Processing Set for Honolulu This October
The PRiME Joint International Meeting, organized by the Electrochemical Society and sister societies from Japan and Korea, will take place from October 6-11, 2024, in Honolulu, Hawaii. Anticipating over 4000 participants, the conference will focus on solid-state science, technology, and electrochemistry. Symposium G01 invites submissions on Atomic Layer Deposition and Etching, covering topics from semiconductor applications to energy storage. The deadline for abstract submission is April 12, 2024. Last year's event saw 78 presentations, indicating a strong interest in the field. For visa, travel information, and participation letters, contact ECS representatives.
Symposium organizers:
F. Roozeboom, (lead), University of Twente; e-mail: f.roozeboom@utwente.nl,
S. De Gendt, IMEC & Catholic University Leuven,
J. Dendooven, Ghent University,
J. W. Elam, Argonne National Laboratory,
O. van der Straten, IBM Research,
A. Illiberi, ASM Europe,
G. Sundaram, Veeco,
R. Chen, Huazhong University of Science and Technology,
O. Leonte, Berkeley Polymer Technology,
T. Lill, Clarycon Nanotechnology Research,
M. Young, University of Missouri,
A. Kozen, University of Vermont.
Thursday, February 15, 2024
Webinar - ALD of nitrides - enabling metastable nitrides by plasma ALD
Speaker: Pamburayi Mpofu, Linköping University, Pedersen Group
"I will describe the general problems for doing ALD of nitrides and why ALD seems to be an enabler for metastable nitrides will be described. With focus on my research on AlTiN I will show how I use ALD in developing an understanding of the surface chemistry during the deposition processes. Using in-situ techniques, to study the surface chemistry while navigating the precursor chemistry to generate experimental data that we compare with modeling results to provide an atomic scale perspective of the surface chemistry."