Showing posts with label ALD - Atomic Layer Deposition. Show all posts
Showing posts with label ALD - Atomic Layer Deposition. Show all posts

Wednesday, February 28, 2024

ASM International: Spearheading Semiconductor Innovation in ALD, Epitaxy, and CVD Markets

ASM International N.V. (Euronext Amsterdam: ASM) yesterday reported its fourth quarter 2023 operating results (unaudited). Double-digit full-year revenue growth, outperforming softer WFE market in 2023

“2023 was another successful year for ASM. Sales increased by 13% at constant currencies, despite softening market conditions, and marking the seventh consecutive year of double-digit growth.” said Benjamin Loh, CEO of ASM. “Revenue in Q4 2023 amounted to €633 million, in line with our guidance of €600-640 million and down compared to the level in Q4 2022. Revenue in the quarter was supported by strong sales in the power/analog/ wafer segment. Bookings at €678 million were slightly better than our expectation and were driven by GAA pilot- line orders and continued strength in China demand.

ASM's Leadership in the Growing ALD Market

According to ASM, the single wafer Atomic Layer Deposition (ALD) market is experiencing significant growth, with projections indicating an increase from $2.6 billion in 2022 to a range of $4.2 billion to $5.0 billion by 2027. This growth, characterized by a Compound Annual Growth Rate (CAGR) of 10-14% from 2022 to 2027, underscores the expanding role of ALD technology in semiconductor manufacturing. ASM International, a key player in the semiconductor industry, holds a dominant position in this market, commanding a share of over 55% throughout the forecast period.

Please note that this market assessment, most probably originally from TechInsights (prev. VLSI Research) does not include Large Batch furnace ALD, which historically have been about 30% of the total 300 mm ALD equipment market. The leaders in this segment are Tokyo Electron followed by Kokusai and ASM chose not to compete with its A412 ALD product line.

Driving Forces Behind ALD Market Expansion

The expansion of the ALD market is propelled by a series of technological advancements and increasing demands within the semiconductor sector. Key factors contributing to this growth include the industry's shift towards Gate-All-Around (GAA) technology, the necessity for advanced high-k gate dielectrics, and the precision required for threshold voltage tuning. Additionally, the development of sacrificial layers and the use of high aspect ratio Through-Silicon Vias (TSVs) are critical in advancing semiconductor manufacturing techniques. The application of metals and the adoption of selective ALD processes further accentuate the importance of ALD technology in modern semiconductor fabrication.

ASM's Strategic Positioning and Market Opportunities

ASM is well-positioned to capitalize on the opportunities presented by the burgeoning ALD market. The company's strategic emphasis on innovation, coupled with its comprehensive product portfolio, positions ASM as a frontrunner in meeting the evolving needs of the logic/foundry and memory segments of the semiconductor industry. The transition to advanced manufacturing technologies, such as GAA and high-k metal gate applications, presents significant growth avenues for ALD, with ASM at the forefront of this technological evolution.

To be more specific, the transition to GAA technology and the expansion in FinFET applications are set to significantly increase ASM's served available market by approximately US$400 million for every 100,000 wafer starts per month (WSPM). According to ASM, the equipment orders started to come in in the 2nd half of 2023. We can assume that this are orders from Samsung, TSMC and Intel. It is however about peculiar since Samsung had 3 nm GAA going already with yield in August 2023 and ASM is describing it as GAA pilot lines. Anyhow, come 2028 when all leading foundries including Rapidus in Japan are up and running GAAFETs, this additional market will be + USD 1.5 B as compared to if it would have been "only" FinFET technology - according to my back of the envelope calculations. For a company like ASM, with just below USD 3 B (2.6 B EUR) annual Revenue 2023 this is a huge thing. If this is not enough to go woah - add to that the GAAFET market is an upwards moving target and will continue to grow and looking ahead stacking of NMOS/PMOS will drive further demand for this type of ALD and Epi processes.

Expansion into the Epitaxy and CVD Markets

The Silicon Epitaxy (Si epi) market is also on a growth trajectory, with forecasts suggesting it will reach between $2.3 billion and $2.9 billion by 2027. ASM aims for a market share target of over 30%, focusing on both leading-edge and non-leading-edge segments. The leading-edge growth is driven by transitions to GAA technology and advancements in high-performance DRAM, while the non-leading-edge growth is buoyed by wafer power analog and strong momentum from ASM's Intrepid ESA. The epitaxy market is expected to see a Compound Annual Growth Rate (CAGR) of 3-8% from 2022 to 2027, with the leading-edge segment outpacing the overall market with a CAGR of 10-15%.

Regarding the SiC market, the investor presentation highlighted significant growth in power/analog/wafer revenue, almost doubling, primarily driven by robust demand in China. This growth was positively impacted by the consolidation of LPE (SiC Epitaxy), with sales comfortably exceeding the target of more than €130 million in 2023. This indicates ASM's strong performance in the SiC market and its successful integration and expansion in SiC epitaxy, aligning with the broader industry trend towards more advanced and efficient semiconductor materials.

Chemical Vapor Deposition (CVD) technology is another area of focus for ASM, particularly in the context of transitioning to new materials like Molybdenum, which is replacing traditional materials such as CVD Tungsten and PVD Copper in interconnect applications. This shift is indicative of the evolving needs within the semiconductor manufacturing process and highlights ASM's adaptability to changing market dynamics.

In summary, ASM's strategic initiatives in ALD, Epitaxy, and CVD technologies underscore the company's commitment to innovation and leadership within the semiconductor equipment market. Through a combination of market foresight, technological prowess, and strategic investments, ASM is well-positioned to capitalize on the growth opportunities presented by the evolving semiconductor landscape. 

Tuesday, February 27, 2024

Applied Materials Unveils Cutting-Edge Patterning Technologies for Next-Gen Semiconductor Device Manufacturing

Applied Materials is leading the charge into the angstrom era of chipmaking, unveiling a suite of innovative solutions at the SPIE Advanced Lithography + Patterning conference. The company's focus is on overcoming the challenges posed by extreme ultraviolet (EUV) and high-NA EUV lithography, crucial for the production of chips at 2nm process nodes and below. Their approach integrates new materials engineering, metrology techniques, and pattern-shaping technology to enhance chip performance and yield.

To help overcome patterning challenges for leading-edge chips, Applied Materials offers a portfolio of technologies designed to complement the latest advances in lithography. The company’s newest innovations include the Producer® XP Pioneer® CVD patterning film, the Sym3® Y Magnum™ etch system, the Centura® Sculpta® pattern-shaping system and Aselta contour technology for design-based metrology.

Central to Applied Materials' advancements is the Sculpta® pattern-shaping technology, first introduced at the previous year's conference. Sculpta has seen growing adoption among top logic chipmakers for its ability to refine EUV patterning, notably reducing double patterning steps and mitigating defects such as bridge defects. This technology not only lowers patterning costs but also improves chip yields, showcasing its increasing importance in the semiconductor manufacturing landscape.

Over the next few years, chipmakers will be looking to create “angstrom era” chips that will use EUV and High-NA EUV lithography to pattern their smallest features. An entire ecosystem of capabilities will be required to enable this advanced patterning – including software and design tools, innovations in deposition and etch, advanced metrology and inspection systems, and entirely new approaches such as pattern shaping.

In response to the issue of EUV line edge roughness, Applied Materials has launched the Sym3® Y Magnum™ etch system. This innovative system employs a combination of deposition and etch processes within a single chamber to smooth out rough edges before etching, thereby enhancing yield and chip performance.

Additionally, the company introduced the Producer® XP Pioneer® CVD patterning film, designed for high-fidelity pattern transfer with enhanced resistance to etch chemistries. This film is especially significant for advanced process nodes, offering improved sidewall feature uniformity and co-optimization with both Sculpta and the Sym3 Y Magnum system for superior patterning capabilities.

To address the critical issue of feature alignment across chip layers, Applied Materials has acquired Aselta Nanographics, integrating its design-based metrology with Applied's leading eBeam systems. This integration enables a comprehensive metrology solution that significantly enhances feature placement accuracy, crucial for optimizing chip performance and yield.

Applied Materials' expansion of its patterning solutions portfolio underscores its commitment to advancing semiconductor technology. By addressing key challenges in EUV lithography and introducing groundbreaking technologies, the company is setting new standards for the industry, driving forward the capabilities of angstrom era chipmaking.

Source: Applied Materials Expands Patterning Solutions Portfolio for Angstrom Era Chipmaking | Applied Materials

DOE Invests $4M in Argonne's ALD Tech to Develop Energy-Efficient Semiconductor Devices

The US Department of Energy (DOE) has awarded Argonne National Laboratory a $4 million grant to pioneer research in microchip energy efficiency using Atomic Layer Deposition (ALD). This innovative project, part of the DOE's Energy Efficient Scaling for Two Decades (EES2) initiative, aims to harness the potential of 2D materials, specifically molybdenum disulfide (MoS2), to create microchips that could consume up to 50 times less energy than current models. 

Led by Argonne's Distinguished Fellow Jeffrey Elam, the research team will collaborate with Stanford, Northwestern, and Boise State Universities to develop ALD techniques for fabricating atomically precise MoS2 films. This breakthrough could lead to microchips with integrated memory and logic functions, significantly reducing energy waste and addressing the critical "von Neumann bottleneck" in computing. The project is a step forward in the global effort to enhance computational efficiency and sustainability.

Monday, February 26, 2024

PRiME 2024: A Global Convergence on Atomic Layer Processing Set for Honolulu This October

The PRiME Joint International Meeting, organized by the Electrochemical Society and sister societies from Japan and Korea, will take place from October 6-11, 2024, in Honolulu, Hawaii. Anticipating over 4000 participants, the conference will focus on solid-state science, technology, and electrochemistry. Symposium G01 invites submissions on Atomic Layer Deposition and Etching, covering topics from semiconductor applications to energy storage. The deadline for abstract submission is April 12, 2024. Last year's event saw 78 presentations, indicating a strong interest in the field. For visa, travel information, and participation letters, contact ECS representatives.

Every four years, the PRiME Joint International Meeting is held under the auspices of the Electrochemical Society (ECS), joint with its sister Societies of Japan and Korea.

This fall, PRIME 2024 will be held on Oct. 6-11, 2024 in Honolulu, Hawaii, and is expected to gather over 4000 participants and 40 exhibitors from both academia and industry.

The conference has a strong focus on emerging technology and applications in both solid-state science & technology and electrochemistry.

General information and the Meeting Program can be found here: CALL FOR PAPERS.

The organizers of symposium G01 on “Atomic Layer Deposition & Etching Applications, 20” encourage you to submit your abstract(s) on topics, comprising but not limited to:

1. Semiconductor CMOS applications: development and integration of ALD high-k oxides and metal electrodes with conventional and high-mobility channel materials;

2. Volatile and non-volatile memory applications: extendibility, Flash, MIM, MIS, RF capacitors, etc.;

3. Interconnects and contacts: integration of ALD films with Cu and low-k materials;

4. Fundamentals of ALD processing: reaction mechanisms, in-situ measurement, modeling, theory;

5. New precursors and delivery systems;

6. Optical, photonic and quantum applications; applications aiming at Machine Learning, Artificial Intelligence

7. Coating of nanoporous materials by ALD;

8. Molecular Layer Deposition (MLD) and hybrid ALD/MLD;

9. ALD for energy conversion applications such as fuel cells, photovoltaics, etc.;

10. ALD for energy storage applications;

11. Productivity enhancement, scale-up and commercialization of ALD equipment and processes for rigid and flexible substrates, including roll-to-roll deposition;

12. Area-selective ALD;

13. Atomic Layer Etching (‘reverse ALD’) and related topics aiming at self-limited etching, such as atomic layer cleaning, etc.

FYI: Last year in Gothenburg, our symposium G01 on ALD & ALE Applications 19 attracted a record number of 78 presentations, composing a full 4-day schedule of 66 oral (of which 18 invited), plus 12 poster presentations.

We will traditionally attract more attendants from Far East and expect to be as successful this fall in Hawaii.

Abstract submission

Meeting abstracts should be submitted not later than the deadline of April 12, 2024 via the ECS website: Submission Instructions

Invited speakers

A list of confirmed invited speakers (from North America, Asia and Europe) will soon be available.

Visa and travel

For more information, see: VISA AND TRAVEL INFORMATION

In addition, Mrs. Francesca Spagnuolo at the ECS ( can provide you with an official participation letter issued by the Electrochemical Society.

For (limited) general travel grant questions, please contact

We are looking forward to meeting you all at our symposium G01 on ALD & ALE Applications 20, in Honolulu | Oct. 6-12, 2024 !

Symposium organizers:

F. Roozeboom, (lead), University of Twente; e-mail:,
S. De Gendt, IMEC & Catholic University Leuven,
J. Dendooven, Ghent University,
J. W. Elam, Argonne National Laboratory,
O. van der Straten, IBM Research,
A. Illiberi, ASM Europe,
G. Sundaram, Veeco,
R. Chen, Huazhong University of Science and Technology,
O. Leonte, Berkeley Polymer Technology,
T. Lill, Clarycon Nanotechnology Research,
M. Young, University of Missouri,
A. Kozen, University of Vermont.

Thursday, February 15, 2024

Webinar - ALD of nitrides - enabling metastable nitrides by plasma ALD

Welcome to the next Applied® Picosun® research community webinar!

Time: Tuesday, 9th of April, 2024 at 13:00 CET
Length: 45 minutes

Although ALD is well known for binary oxides, it is less understood for binary nitrides. Some commonly studied nitride examples are SiNx and TiN that have been extensively investigated while GaN and AlN are less reported since ALD has not been needed for these materials. We have recently shown how plasma ALD seems to be a true enabler for InN, which is metastable both as binary and when combined to form ternaries. Apart from nitrides for optoelectronics, metastable cubic AlTiN has been used to increase the service life of cutting tools. Cubic AlTiN is routinely synthesized using physical vapor deposition techniques operating far from thermal equilibrium. Recently, it has been shown that metastable, cubic AlTiN with high Al content can be deposited close to thermodynamic equilibrium by deposition techniques working at very low pressures. However, very little is understood about the deposition chemistry in these processes, limiting process development to be supported by educated guesses rather than scientific understanding. In the research, a scientific understanding of the deposition chemistry for cubic AlTiN is formed, to facilitate the development of better, more sustainable processes for these coatings.

Speaker: Pamburayi Mpofu, Linköping University, Pedersen Group

Pamburayi Mpofu is a third-year Doctoral Candidate in Materials Chemistry and a member of the Henrik Pedersen Group in the Department of Physics, Chemistry, and Biology (IFM) at Linköping University, Sweden.

Pamburayi holds a Master’s degree in Chemistry from Linköping University. His research interests are in Inorganic Materials Chemistry with a focus on atomic layer deposition (ALD). He is currently working on understanding, on a fundamental atomic level, the surface chemistry governing the deposition of metastable ternary nitrides (in particular AlTiN) thin layers of materials by ALD, for protective hard coating applications.
"I will describe the general problems for doing ALD of nitrides and why ALD seems to be an enabler for metastable nitrides will be described. With focus on my research on AlTiN I will show how I use ALD in developing an understanding of the surface chemistry during the deposition processes. Using in-situ techniques, to study the surface chemistry while navigating the precursor chemistry to generate experimental data that we compare with modeling results to provide an atomic scale perspective of the surface chemistry."

Scalable Electronic-Grade Van der Waals Tellurium Thin Films

Scalable Electronic-Grade Van der Waals Tellurium Thin Films: A study demonstrated a scalable ALD route for creating electronic-grade van der Waals tellurium (Te) thin films. By employing acid-base precursors and co-reactants, the research team successfully produced dense, continuous Te thin films on a wafer scale. This breakthrough is crucial for various electronic devices, promising enhancements in transistors, rectifiers, and selection elements.

Process Controlled Ruthenium on 2D Engineered V-MXene via Atomic Layer Deposition for Human Healthcare Monitoring

Engineering 2D MXene Family with Precious Metals: A novel approach has been introduced for the engineering of the 2D MXene family using precious metals through ALD techniques. This development opens new possibilities in personal healthcare devices, clean energy conversion, and storage systems by enabling the integration of precious metals like Ru, Ir, Pt, and Pd at an atomic scale, enhancing surface activity and energy performance​​.

In the study, a traveling-wave type thermal Atomic Layer Deposition (ALD) reactor (Lucida D-100, NCD Technology, Korea) was utilized to deposit ruthenium films on SiO2/Si wafers and delaminated V2CTx MXene. The ruthenium metal-organic precursor used was tricarbonyl(trimethylenemethane)ruthenium, [Ru(TMM)(CO)3], provided by TANAKA Precious Metals (Japan). Oxygen (O2) served as the reactant gas in the deposition process. The ALD process involved a sequence of precursor pulsing, nitrogen purging, reactant gas pulsing, and another nitrogen purging to ensure self-limiting growth and uniform film deposition.

A schematic of atomic layer deposition process and step coverage of ALD-Ru film. Credit: Advanced Science (2023). DOI: 10.1002/advs.202206355

The key highlights and potential applications of this research include:

Enhanced Temperature Sensing Performance: The delaminated V-MXene engineered with ruthenium via ALD shows a threefold increase in temperature sensing performance compared to V-MXene alone. This improvement is attributed to the highly ordered few-layer structure of V-MXene and the controlled atomic doping of ruthenium, forming a heterostructure that enhances sensing and reversibility.

Advanced Material Characterization: The study uses high-resolution electron microscopy techniques coupled with next-generation technology for detailed investigation of the heterostructure's formation, providing insights into the role of ruthenium in improving the sensor's performance.

Potential for Healthcare Applications: The sensor's high sensitivity and reliability in temperature detection make it suitable for various healthcare applications, including real-time skin temperature monitoring, non-contact touch, and breathing rate detection. This could be particularly useful for personal healthcare devices, offering a non-invasive way to monitor vital signs and detect potential health issues early.

Human-Machine Interface: The sensor's ability to detect temperature changes accurately and reliably can be applied in human-machine interfaces, such as wearable devices or smart textiles, enhancing user interaction through temperature-sensitive controls or feedback mechanisms.

Scalability and Environmental Consideration: The use of an industrially scalable ALD technique for sensor development, combined with a mild etching process for V-MXene synthesis, points towards the potential for large-scale production with reduced environmental impact.

Versatility and Multifunctionality: The combination of V-MXene's large surface area, hydrophilicity, and the electronic properties of ruthenium suggests that beyond temperature sensing, this material system could be explored for other applications like humidity sensing, energy storage, and conversion, indicating a broad scope for future research and development.

Thursday, January 25, 2024

Chipmetrics Secures € 2.4 Million Seed Funding Round to Accelerate Product Innovation and Global Expansion.

24.01.2024– Joensuu, Finland: Chipmetrics Ltd, the Atomic Layer Deposition (ALD) technology company and a pioneer in 3D ultra-high aspect ratio test elements for metrology of semiconductor and advanced thin film material manufacturing, proudly announces the successful closure of a €2.4 million investment round. The international investor syndicate was led by High-Tech Gründerfonds (HTGF) and co-led by OCCIDENT from Germany. Other investors were Innovestor, REDSTONE and BALD Engineering. This substantial investment serves as a testament to Chipmetrics’ groundbreaking advancements in the PillarHall® metrology test chip technology, positioning the company as a frontrunner in conformality measurements in material deposition processes. The funds raised will be instrumental in accelerating Chipmetric’s product development efforts, scaling production capabilities, and expanding its market presence with the already existing international customer base.

Founders and management team of Chipmetrics Ltd. Persons in the picture, from left to right: Feng Gao (CTO), Pasi Hyttinen (CDO) and Mikko Utriainen (CEO).

Mikko Utriainen, the visionary founder & CEO of Chipmetrics, highlights the investment’s role in driving the company’s innovative pursuits and global market expansion. “This investment is a boost for our growth plans and technological advancements. We are committed to enhancing our product portfolio, refine our measurement solutions, and reinforce our global sales network ” Utriainen states.

Olaf Joeressen, Senior Investment Manager of HTGF comments: “The team’s focus on delivering innovative solutions to their customers is impressive, and I look forward to more product and service innovations delivered by Chipmetrics!”

Investment manager Simon Schild von Spannenberg from OCCIDENT continues: “Chipmetrics has already established a reputable position in thin film process development with its innovative PillarHall® Lateral High Aspect Ratio (LHAR) test chips. Chipmetrics’ products convince with their unique user interface, precision, speed, and cost-efficiency in the complex 3D measurements. Our investment reflects our confidence in the Chipmetrics’ team and the success of the highly innovative technology on the global semiconductor market.”

About Chipmetrics

Chipmetrics Oy develops and delivers metrology solutions for manufacturing processes for the semiconductor industry. The company’s business is based on the sale of innovative metrology chips and measurement services whose applications are focused on ALD technology. The company’s main product is the PillarHall® metrology chip for thin film process conformality measurement. The company was founded in 2019 and its head office is in Joensuu, Finland. In addition, the company has employees and sales partners in Japan, South Korea, the USA, and Germany.

For more information, visit

About High-Tech Gründerfonds

The seed investor High-Tech Gründerfonds (HTGF) finances tech start-ups with growth potential and has supported more than 700 start-ups since 2005. With the launch of its fourth fund, HTGF now has about 1.4 billion euros under management. Its team of experienced investment managers and start-up experts support young companies with expertise, entrepreneurial spirit and passion. HTGF’s focus is on high-tech start-ups in the fields of digital tech, industrial tech, life sciences, chemistry and related business areas. To date, external investors have injected about 5 billion euros of capital into the HTGF portfolio via more than 2,000 follow-on financing rounds. In addition, HTGF has already successfully sold shares in more than 170 companies. Fund investors in this public-private partnership include the German Federal Ministry for Economic Affairs and Climate Action, KfW Capital and 45 companies from a wide range of industries.

For more information at


OCCIDENT is an international venture capital investor with offices in Munich and Zug, is owner-managed and invests its own assets. Its mission is to make a positive contribution to society through sustainable and meaningful investments. OCCIDENT invests in innovative deep tech start-ups with excellent technologies, broad application possibilities and the potential for further development in the fields of life sciences, industrial tech and digital. OCCIDENT acts as a long-term enabler for highly innovative startups and visionary founders.

About Innovestor

Innovestor is a Finnish investment company focusing on venture capital and real estate. In addition, we offer corporate venturing services. The firm currently manages six VC funds with total capital of over €250 million. Consisting of almost 100 growth companies across multiple sectors of technology and life science & health, it represents one of the largest private venture-backed portfolios in the Nordics. Our mission is to make good money.

About Redstone

Redstone, headquartered in Berlin with offices in Zurich and Helsinki, is a European early-stage venture capital firm that pursues selected investment strategies. With its data-driven approach, Redstone develops strong sector expertise, building valuable networks for its portfolio. As one of Europe’s most active early-stage investors, Redstone manages a diverse portfolio of over 80 companies, focusing on Built World, Climate, Fintech, Industrial Tech, Social Impact, and Quantum.

Contact Information:

Mikko Utriainen, CEO, Chipmetrics Ltd

Tel: +358 10 348 1344

Tuesday, January 23, 2024

Atomic Scale Innovation Workshop in Copenhagen


Hosted by ATLANT 3D, this event is a gathering point for industry experts, researchers, and technical professionals, all focused on exploring the vast potential of Atomic Layer Deposition (ALD) and related technologies.

The future of manufacturing lies in precision and sustainability. At ATLANT3D, we are deeply committed to advancing the frontiers of atomic scale manufacturing, unlocking novel avenues for materials development and scalable applications. This conference is our call to arms, bringing together the brightest minds to push the boundaries of what’s possible.

Topics & Highlights:
• ALD's current market and applications in various industries.
• In-depth presentations on advanced materials innovation.
• Interactive discussions on the future of atomic layer processing.

Topic: “Atomic Layer Deposition: Its Evolution, Diverse Applications, and Future Prospects”.
• DR. Maksym Plakhotnyuk 🇺🇦, CEO & FOUNDER OF ATLANT 3D
Topic: “Atomic Layer Processing: Driving Global Innovation in Advanced Manufacturing”.
• PROF. DR. Erwin Kessels, EINDHOVEN UNIVERSITY OF TECHNOLOGY Topic: “Innovations in Plasma Processing for Nanoscale Fabrication”.
Topic: “Advancements in 2D Materials Synthesis Through Atomic Layer Deposition”.
Topic: “Progress and Opportunities for Atomic Layer Deposition to Facilitate Next-Generation Batteries”.
Topic: “Harnessing ALD for Next-Generation Photovoltaics and Electrochemical Energy Storage”.
Topic: “ALD Deposited Ultrabarriers for Applications in Electronics, Energy, and Medical Fields”.
• DR. Ville Miikkulainen, ALTO UNIVERSITY
Topic: “Photo-assisted ALD: Enabler for Direct-Write ALD”.

Download brochure:

Special Features:
• Exclusive visit to ATLANT 3D's state-of-the-art A-HUB & Laboratory facilities.
• A social evening for informal networking and collaboration.

Saturday, January 20, 2024

Unveiling the Future of Material Science: Key Takeaways from the MLD and ALD Webinar

In the dynamic world of material science, the recent Applied Materials Picosun webinar held on January 16, 2024 centered on Atomic Layer Deposition (ALD) and Molecular Layer Deposition (MLD), offered a deep dive into these groundbreaking technologies and their applications in crafting advanced functional properties. 

LINK to recording: Atomic layer deposition (ALD) and molecular layer deposition (MLD) together present an elegant technique for the deposition of novel inorganic-organic materials. (

The webinar was given by Topias Jussila, Doctoral Researcher, Aalto University, Finland. Let's explore how ALD and MLD are shaping the future of materials at the nanoscale.

The Emergence of MLD

Molecular Layer Deposition, though a relative newcomer compared to ALD, has quickly garnered attention for its unique capabilities. MLD, which operates on the principle of sequential molecular layering, offers a versatile platform for creating hybrid materials with tailored properties. The webinar expertly delineated the different types of MLD, such as metal-aliphatics, metal-aromatics, and inorganic-organic multilayers, each presenting its distinct advantages in material fabrication.


Synergy of ALD and MLD

The fusion of ALD with MLD emerged as a focal point of discussion. This combination enhances the material properties, allowing for precise control at the nanoscale. The synergy of ALD and MLD opens doors to innovative applications, particularly in microelectronics and nanotechnology, by creating materials with unprecedented electrical, optical, and mechanical properties.


Applications That Reshape Industries

The practical applications of MLD and ALD-MLD are vast and varied. Key areas include:

Flexible Barrier Layers: MLD is particularly effective in creating ultra-thin, flexible barrier layers that are impermeable to gases and moisture. This is crucial for applications like organic light-emitting diode (OLED) displays and flexible electronics, where moisture and oxygen can degrade the performance of the devices.

Encapsulation: MLD provides an excellent method for encapsulating sensitive components, protecting them from environmental factors without compromising their functionality.

Photocatalysis: MLD materials are used in photocatalysis applications, which are important in environmental remediation and energy conversion technologies.

Electronics and Semiconductors: The combination of MLD with ALD is particularly advantageous in the electronics and semiconductor industries. It enables the precise deposition of thin films with tailored electrical and optical properties, crucial for advanced microelectronics and photonics.

Biomedical Applications: The versatility of MLD and ALD-MLD coatings also finds applications in the biomedical field, such as in drug delivery systems and bioimaging, where biocompatibility and controlled interactions with biological environments are essential.

Industrialization and Future Outlook

As for the industrialization of MLD, it is a relatively newer field compared to ALD. While ALD has been widely industrialized, particularly in the semiconductor industry, MLD is still primarily in the research and development stage, with growing interest in transitioning to industrial applications. The unique capabilities of MLD in creating organic-inorganic hybrid materials are driving research and potential industrial applications, but widespread industrial adoption might still be in progress.


The ALD and MLD webinar served as a beacon of knowledge, shedding light on the latest advancements and future prospects of these technologies. As we step into an era where material science plays a critical role in technological advancements, the insights from this webinar not only educate but also inspire further exploration and innovation in the field. The future of material science, undoubtedly, holds exciting possibilities, with ALD and MLD at its forefront.

Background: Topias Jussila is a second year PhD student at the Department of Chemistry and Materials Science, Aalto University, Finland. Topias carried out his Bachelor’s degree in Chemistry at the University of Helsinki and Master’s degree in Functional Materials at Aalto University. For the past two years, Topias has worked intensively with atomic layer deposition (ALD) and molecular layer deposition (MLD) with a target to develop novel thin film materials with advanced functional properties, having the main focus in iron-based inorganic and inorganic-organic materials. In addition to deposition process development, he has employed a wide range of thin film characterization methods to study the composition, structure, and functional properties of the thin films.

Wednesday, January 10, 2024

NCD supplied repeated ALD equipment for special protective coating

NCD Co., Ltd. has again supplied large-scale productive ALD equipment to a Korean customer. It is for special coating parts used in semiconductor equipment to protect from corrosion and plasma arcing. This contracted equipment is the improved Lucida GSH Series ALD, which is capable of coating more and heavier products at once than the existing equipment. So the customer is able to obtain the greater increased productivity and reduced coating costs.

As semiconductor devices become smaller and more integrated, particles and byproducts that were not a problem before can significantly affect device performance, so the cleaning cycle and life time of parts used in semiconductor equipment are becoming shorter.

Lucida GSH Series ALD

Therefore, atomic layer deposition protective coating on parts can be a very effective solution, and high-quality, uniform atomic layer coating can achieve the effect of increasing the usage time of expensive parts in semiconductor equipment without cleaning and replacement.

Previously, atomic layer deposition protective coating was widely applied to expensive parts such as showerheads and ESCs, but recently, it has been applied to various semiconductor equipment parts with complex gas paths, quartz products with complicated shapes, and high-purity precursor canisters that require the lowest impurity control. The scope of application is gradually increasing so we will look forward to steady and continued expansion of products and markets in this application field.

This repeated contract confirms once again the excellence of NCD's industrial atomic layer deposition technology and equipment to its customers, and it showed NCD to have occupied the leader on the gradually expanding market of atomic layer deposition equipment for part protection coating. NCD will continue to pioneer new atomic layer deposition markets based on its best technology and customer trust.

Wednesday, December 27, 2023

Exploring Ultrathin Solar Cells with Professor Carl Hägglund: A Journey from Stanford's ALD Techniques to Plasmonic Solar Cell Optimization

In this episode, Tyler is joined by Professor Carl Hägglund from Uppsala University. They discuss Carl’s motivations for pursuing ultrathin solar cells, how he learned ALD at Stanford in Stacey Bent’s lab, and an unlikely research connection through his child’s school. They also talk about why ALD is useful for plasmonic solar cells, optimization of SnS ALD and his planned path towards a fully realized ultrathin photovoltaic.

00:00 Introduction
01:45 Motivation for fabricating plasmonic solar cells
09:58 Learning ALD at Stanford
22:46 Optimizing SnS ALD process
30:33 Path towards an ultrathin solar cell

Wednesday, December 20, 2023

Enhancing Thin Film Deposition with Plasma-Activated Water: A Novel Approach in Atomic Layer Deposition

The research article "Novel Energetic Co-Reactant for Thermal Oxide Atomic Layer Deposition: The Impact of Plasma-Activated Water on Al2O3 Film Growth" presents a groundbreaking study on the use of plasma-activated water (PAW) in the atomic layer deposition (ALD) of Al2O3 thin films. This study offers significant insights into the potential advantages of using PAW over traditional water in thin film deposition processes.

One of the key findings of this research is the enhanced Growth Per Cycle (GPC) when using PAW as a co-reactant. The study found that PAW led to an increase in GPC of up to 16.4% compared to deionized (DI) water. This enhancement is attributed to the reactive oxygen species present in PAW, such as H2O2 and O3, which are believed to activate substrate sites more effectively, thereby improving both the GPC and the overall quality of the films.

The study also delves into the chemical reactivity of PAW, noting significant changes in its physicochemical properties upon activation. These changes include a decrease in pH, indicating increased acidity, as well as increases in oxidation-reduction potential (ORP), conductivity, and total dissolved solids (TDS). Additionally, the concentration of reactive species like H2O2, NO2−, NO3−, HNO2, and O3 was found to be higher in PAW.

The improved film quality achieved with PAW is another highlight of the study. Films grown using PAW, especially with PAW at a pH of 3.1, displayed a near-stoichiometric O/Al ratio, reduced carbon content, and an expanded bandgap. These characteristics are indicative of a superior film quality compared to those grown using DI water.

Furthermore, the study suggests that a comprehensive understanding of PAW's role in ALD necessitates further investigations. These investigations should explore different temperatures, metal precursors, and PAWs generated by alternate non-thermal plasmas.

The term “PAW-ALD” has been proposed to describe this enhanced variant of the ALD process that incorporates plasma-activated water. This new descriptor highlights the unique approach and potential benefits of using PAW in thin film deposition processes.

Finally, the potential applications of this research are significant. The use of PAW in ALD could mirror the gains observed in plasma-enhanced atomic layer deposition (PEALD) processes that use oxygen plasma, indicating its potential industrial relevance.


Nanomaterials 202313(24), 3110;

Nanomaterials | Free Full-Text | Novel Energetic Co-Reactant for Thermal Oxide Atomic Layer Deposition: The Impact of Plasma-Activated Water on Al2O3 Film Growth (

Announcement: Webinar on ALD and MLD Techniques for Advanced Functional Materials

Join us for an enlightening webinar on Atomic Layer Deposition (ALD) and Molecular Layer Deposition (MLD), showcasing their combined prowess in the creation of novel inorganic-organic materials. This event is an excellent opportunity for those interested in advanced material sciences and engineering.

Date and Time: Tuesday, 16th of January, 2024 at 14:00 CET

Duration: 45 minutes

This session will provide a comprehensive overview of ALD and MLD, contrasting them with traditional solution-based methods. We will delve into how these techniques enable the formation of high-quality thin films, crucial for practical applications in areas such as optical data storage and wearable energy harvesting devices.

Key Highlights:

- An introduction to ALD-MLD techniques.

- Exploration of state-of-the-art inorganic-organic thin films, including photoactive ferrimagnetic and thermoelectric hybrid thin films.

- Discussion on technical challenges with organic precursors and solutions for industrial-scale application.

Guest Speaker: Topias Jussila, Doctoral Researcher, Aalto University

Topias Jussila is a promising PhD student at the Department of Chemistry and Materials Science, Aalto University, Finland. With a background in Chemistry and Functional Materials, his current research focuses on the development of novel thin film materials using ALD and MLD, particularly in the realm of iron-based materials.

Don't miss this opportunity to gain insights into the cutting-edge world of thin film materials and their applications. Register today to secure your spot!

For more information and registration, visit Atomic layer deposition (ALD) and molecular layer deposition (MLD) together present an elegant technique for the deposition of novel inorganic-organic materials. (

Saturday, December 2, 2023

Introducing ALD to the Semiconductor Industry with Suvi Haukka – ALD Stories Ep. 29

Dr. Suvi Haukka, former executive technologist at ASM, ASM Fellow and ALD Innovator Awardee, joins Tyler for Episode 29. Suvi began her ALD career at Microchemistry in Finland working on atomic layer epitaxy on catalysts for under the direction of ALD technology inventor, Tuomo Suntola. She continued with Microchemistry as head of the thin film development group before spending most of her time teaching the world’s biggest semiconductor companies, like Intel and Samsung, about ALD. Suvi is one of the integral people in introducing ALD to the semiconductor industry in the 2000s. Suvi and Tyler discuss how she started working with ALD, what it was like to do a PhD with Tuomo Suntola, and how the make up of Microchemistry changed over the years. We also discuss the circumstances surrounding the ASM acquisition, how development changed under new leadership, and how it felt pitching ALD to the semiconductor industry. 

In this episode: 
00:32 Introduction to Microchemistry 
06:01 Doing a PhD with Tuomo Suntola 
19:00 Visiting semiconductor companies 
25:37 Post-ASM acquisition

Friday, December 1, 2023

ASD2024: Uniting the World of Area Selective Deposition in Historic Old Montreal

Announcement for ASD2024 Workshop

Dates: April 15-16, 2024

Location: Old Montreal, Canada

Welcome and bienvenue to the exciting Area Selective Deposition (ASD) workshop to be held in the picturesque Old Montreal. This two-day event, scheduled for April 15 and 16, offers an enriching platform for both academic and industry professionals to exchange groundbreaking ideas in the field of ASD.

Special Sessions:

1. Pre-Workshop Tutorial: A comprehensive half-day tutorial on April 14 (Sunday afternoon). Note: This session requires an additional fee.

2. Atomic Layer Processing Showcase: A half-day event on April 17 (Wednesday morning), highlighting Canada's advancements in atomic layer processing. This session is included in the conference fee.

Conference Venues:

- Hotel Place d'Armes (55 Rue Saint-Jacques): Main sessions and lunches on Monday and Tuesday will be hosted here. This 4-star hotel is conveniently located near a metro stop.

- Hotel Nelligan (106 Saint-Paul St W): A 4-star boutique hotel, the venue for the opening mixer on Sunday evening and the poster session on Monday evening.

Workshop Highlights:

- Single session format over two days featuring invited and contributed talks.

- A panel discussion focusing on the industrial and academic communication of ASD.

- Networking opportunities with leading experts and peers.

Explore Montreal:

Participants are encouraged to experience the charm of Old Montreal, known for its vibrant restaurants, bars, shopping venues, and historical sites like the Notre Dame Basilica and the port. For sports enthusiasts, the Circuit Gilles Villeneuve offers a unique opportunity for running and cycling.


- Prof. Sean Barry, Carleton University

- Prof. Paul Ragogna, Western University

Scientific Committee:

- Adrie Mackus, Eindhoven University of Technology

- Anjana Devi, Ruhr University Bochum

- Annelies Delabie, IMEC

- Anuja DaSilva, Lam Research

- Dennis Hausmann, Lam Research

- Erwin Kessels, Eindhoven University of Technology

- Gregory Parsons, North Carolina State University

- Han-Bo-Ram Lee, Incheon National University

- Ishwar Singh, IBM

- Keyvan Kashefi, Applied Materials

- Kristen Colwell, Intel

- Mark Saly, Applied Materials

- Marko Tuominen, ASM

- Ralf Tonner-Zech, Wilhelm-Ostwald-Institute für Physikalische und Theoretische Chemie

- Ravi Kanjolia, EMD Electronics

- Robert Clark, TEL

- Sang Hoon Ahn, Samsung Electronics

- Seung Wook Ryu, SK hynix

- Stacey F. Bent, Stanford University

Contact Information:

Monday, November 27, 2023

Congratulations to Jusung Engineering on 30 Years of Pioneering Innovation and Market Leadership in ALD, Semiconductor, Display, and Solar Technologies!

Jusung Engineering, celebrating its 30th anniversary, is a leader in semiconductors, displays, and solar equipment. Founded in 1993, the company has seen considerable growth through innovation, achieving record sales and operating profits last year. It specializes in semiconductor equipment for memory and non-memory sectors, leveraging advanced ALD technology. In displays, Jusung is diversifying equipment for various panel sizes, while in solar, it's innovating with high-efficiency solar cells. The company is investing in future growth, with new R&D and manufacturing facilities, focusing on technological independence. It holds over 3,000 patents, with 65% of its workforce in R&D, investing 15-20% of sales in technology development. The CEO attributes their success to relentless innovation and a unique path, with plans to maintain leadership in future technologies and expand into global markets. Despite recent challenges, Jusung remains optimistic, prioritizing innovation and market creation.

The Jusung Engineering headquarters in Gwangju, Korea 출처 : Businesskorea (

Fullarticle and interview:

Jusung Engineering Leading in Semiconductor, Display, Solar by Innovating with Atomic Layer Deposition - Businesskorea

Thursday, November 23, 2023

AI-Driven Chip Demand Spurs Optimism in Semiconductor Industry; Analyst Upgrades Key Players with Bullish Price Targets

Analyst Timm Schulze-Melander (Head of Tech Hardware research, Redburn) predicts growth in the semiconductor equipment industry, driven by AI-related chip demand. He upgraded Applied Materials and ASM International to "Buy," started Lam Research with a "Buy" rating, and rated KLA as "Neutral." Despite current capacity reductions, he sees growth resuming in 2025. Positive signs include recovering PC and mobile phone markets, with smartphone shipments expected to rise. He set price targets for each company, highlighting their market strengths. This analysis led to a rise in the companies' stock prices, reflecting optimism for the sector's future, particularly in the context of AI-driven demand.

The target prices set by analyst Timm Schulze-Melander are as follows:
  • Lam Research: $800 - now $717
  • ASM International: €545 - now $459
  • KLA: $550 - now $554
  • Applied Materials: $175 - now $149

Google Finance

Wednesday, November 22, 2023

SEMICON Europa 2023: A Deep Dive into ALD Technology for Wafer Fab Equipment in the More-than-Moore Era

Last week at SEMICON Europa, at the ALD Tech Day Organized by Beneq, Yole Group presented a comprehensive analysis on ALD technology for More-than-Moore (MtM) devices, focusing on its impact and future in the wafer fab equipment market. The presentation titled "Atomic Layer Deposition for More-than-Moore Devices in a Perspective of the Wafer Fab Equipment Market" offered valuable insights into the current trends and future directions of this pivotal technology.

The Growing Importance of ≤200 mm Wafers

A focal point of the discussion was the ≤200 mm wafer size, a segment that remains crucial in the semiconductor industry despite the surge in larger wafer sizes. The presentation highlighted the market size, chipmaker revenue, and capacity expansion specifically for this category. It emphasized that while the industry continues to evolve technologically, the demand for ≤200 mm wafers remains robust, accounting for a significant portion of the market.

Semiconductor Device Revenue Projections

Yole Group presented a detailed forecast for semiconductor device revenue, segmenting it by device type. They projected a CAGR of approximately 4.5%, expecting the overall market to reach around $850 billion by 2030. Within this, MtM devices are anticipated to contribute significantly, estimated at about $270 billion, indicating the growing relevance of these devices in the semiconductor landscape.

CapEx 200 mm Accelerates in Coming 5-Years - In 2023, the CapEx for 200mm wafer processing stood at $37 billion, representing 15% of the total device revenue of $252 billion. The slide forecasts an increase in CapEx to 17% of revenue by 2025, followed by an expected decrease to more sustainable levels by 2028. An impending demand for more Wafer Fab Equipment (WFE) for 200mm processing. Importantly, a significant opportunity for the introduction of ALD technologies in fabrication facilities, driven by the growth of compound semiconductors. This suggests a strategic shift in the industry, emphasizing the expanding role of ALD technology.

Capital Expenditure Trends and ALD Market Dynamics

The presentation also shed light on the capital expenditure (CapEx) trends in the industry, particularly for 200 mm wafer processing. With CapEx projected to increase to 17% of the revenue by 2025, a subsequent trend towards more sustainable levels by 2028 was also anticipated. This trend underscores the expanding market and the need for more Wafer Fab Equipment (WFE), presenting a substantial opportunity for the growth of ALD technologies.

Atomic Layer Deposition: Meeting Industry Needs

The analysis delved deeply into the ALD market, discussing how this technology is evolving to meet the changing demands of the semiconductor industry. It was pointed out that ALD technology is not just adapting but also driving significant advancements, particularly in the context of MtM devices.

From the presentation by Yole Group focuses on the use of ALD in power devices, emphasizing its role in enhancing device performance through precise interface control. The need for specialized ALD equipment, capable of handling multiple processes and materials, including thermal and plasma ALD with various precursors. ALD applications are found in in Silicon Carbide (SiC) and Gallium Nitride (GaN) devices, covering aspects like passivation, substrate creation, and buffer layers. While ALD is still in R&D for GaN High Electron Mobility Transistors (HEMT), it is already being used for SiC Trench and Planar MOSFETs in encapsulation and gate dielectrics, signaling its growing importance in semiconductor manufacturing.

Industry Challenges and Opportunities

The challenges and opportunities within the semiconductor industry were a crucial part of the discussion. The presentation addressed the current supply chain dynamics, technological innovations, and market trends that are shaping the adoption and development of ALD technology.


The presentation at SEMICON Europa provided a lucid and detailed perspective on the ALD technology in the context of the wafer fab equipment market. With a focus on ≤200 mm wafer size, it painted a comprehensive picture of the current market scenarios, future trends, and the pivotal role of ALD technology in shaping the future of semiconductor manufacturing. As the industry continues to evolve, the insights from this presentation will undoubtedly influence strategic decisions and technological advancements in the semiconductor sector.

SourceALD TECHDAY 2023 powered by Beneq (

Presentation shared with the attendees

AIXTRON's G10-GaN System Empowers BelGaN's Expansion into the Growing GaN Semiconductor Market

The article discusses AIXTRON's support for BelGaN in expanding its Gallium Nitride (GaN) business through the new G10-GaN system. AIXTRON SE, a semiconductor company, is enabling BelGaN, a leading GaN automotive-qualified semiconductor foundry in Europe, to enter the growing GaN market and boost GaN technology innovation. BelGaN plans to use AIXTRON's G10-GaN, which offers top performance, a compact design, and low cost per wafer, starting with an 8x150mm configuration, to be delivered to BelGaN's production site in Oudenaarde, Belgium, by the end of 2023. This system will later evolve to support 5x200mm.

AIXTRON's G10-GaN System Empowers BelGaN's Expansion into the Growing GaN Semiconductor Market

BelGaN aims to expand its power chip range with voltage ratings from 40V to 1200V, utilizing GaN-on-Si, GaN on SOI, and new GaN-on-engineered substrates, focusing on high performance, automotive quality, reliability, high yield, and low costs. The G10-GaN will enable innovations in device architectures and improvements in performance, yield, and quality, reducing the cost of GaN products. This advancement is expected to drive growth in e-mobility, datacom, energy conversion, and contribute to a carbon-neutral society.

The G10-GaN epitaxy system is a highly efficient, productive, and cost-effective solution for GaN power and RF applications, combining single wafer performance with the economy of batch processing.

Dr. Marnix Tack of BelGaN praised the productivity, uniformity, and low cost of ownership of the G10-GaN, while Dr. Felix Grawert of AIXTRON expressed pride in BelGaN's choice of their technology. The G10-GaN, building on the G5+ C platform, offers double the productivity per cleanroom area, better material uniformities, and over 25% lower cost of ownership compared to other market equipment, making it a competitive choice for AIXTRON's customers. This MOCVD system is fully automated and designed for silicon fabs, marking a significant technological step in the semiconductor industry.

G10 GaN Performance (

The G10-GaN by AIXTRON is a state-of-the-art deposition system for 150/200 mm GaN epitaxy, designed for GaN power and RF applications. It features a compact cluster design with three process chambers, reducing the footprint by 50% while maximizing wafer yield per square meter. This system significantly improves device yield with a threefold increase in on-wafer uniformity and maintains low particle levels, enhancing overall quality and consistency.

Cost-effectiveness is a key attribute, with the G10-GaN offering more than 25% lower epitaxial cost per wafer compared to other platforms. It incorporates Planetary Reactor® technology for high wafer yield and uniformity. The system's productivity is marked by over 90% equipment uptime and highest throughput per fab area, supported by features like fully automated wafer handling and advanced temperature control.

The G10-GaN ensures easy maintenance and operation with features like automated chamber cleaning and predictive functionalities. It's compatible with existing AIX G5+ C tools, facilitating seamless process transfers. Overall, the G10-GaN epitaxy system combines efficiency, cost-effectiveness, and advanced technology, making it an optimal choice for semiconductor manufacturing in the GaN sector.

Market opportunity for GaN for MOCVD and ALD

ALD and MOCVD is rapidly gaining traction in the semiconductor industry, particularly for logic, memory, and wide-bandgap power semiconductors. This growth is highlighted by industry experts at SEMICON Europa 2023. ALD is primarily adopted for its excellent surface passivation qualities, essential in GaN power electronic devices. While miniaturization drives ALD use in some sectors, its primary role in power electronics is to provide high-quality, conformal coatings, crucial for device performance and reliability. Thermal ALD processes like Al2O3 and AlON are key for GaN transistors, offering improved interface layers for low dynamic switching losses. ALD's impact is most notable in consumer, automotive, and industrial markets, where it enhances device performance and longevity. Looking forward, continued optimization of ALD processes and in-situ surface treatments are expected to further enhance device performance and reliability, especially in GaN power electronic devices, with high growth predicted in various end markets.