Monday, October 23, 2023
TSMC To Report Breakthrough in NMOS Nanosheets Using Ultra-Thin MoS2 Channels at IEDM 2023
Tuesday, September 19, 2023
AIXTRON's MOCVD Machine Advancing 2D-Materials at imec
AIXTRON, a German semiconductor equipment manufacturer, has successfully installed the CCS 2D Metal-Organic Chemical Vapour Deposition (MOCVD) reactor at the Interuniversitair Micro-Electronica Centrum (imec) in Belgium. Part of the 2D Experimental Pilot Line initiative, this reactor facilitates large-scale epitaxial deposition of 2D-materials on 200/300 mm wafers, marking a significant milestone in the transition of these materials from lab to fab.
Inge Asselberghs, Director of the 2D Experimental Pilot Line at imec, emphasizes the unique position of imec as a bridge between academia and industry, offering access to both fundamental research laboratories and industrial infrastructure.
Salim El Kazzi, 2D Product Manager at AIXTRON, outlines the challenges of the lab-to-fab transition, including miscommunication and the technical intricacies of 2D-materials. AIXTRON addresses these challenges by fostering collaboration among top researchers and providing FAB-compatible reactors like the CCS 2D.
To bridge the gap effectively, Asselberghs highlights the importance of versatile tools for rapid material and process screening, crucial for seamless information exchange between industry and academia.
The CCS 2D MOCVD machine from AIXTRON offers precise control over deposition parameters and features like closed-coupled shower heads and a transfer module for 2D-material growth on 300 mm wafers.
This installation promises exciting prospects for imec's research on transition metal dichalcogenides (TMDCs) and advances in pilot-line processes for 2D-material growth and layer transfer. Both AIXTRON and imec actively participate in Graphene Week 2023, contributing to the advancement of 2D-materials in industrial applications and strengthening the link between academia and industry.
Source: AIXTRON installs a MOCVD machine CCS 2D in IMEC’s fab | Graphene Flagship (graphene-flagship.eu)
Tuesday, January 19, 2021
Atomic Layer Deposition of 2D Metal Dichalcogenides for Electronics, Catalysis, Energy Storage, and Beyond
Thursday, January 7, 2021
How ALD can be used to stack 2D materials on one another at a nanometer scale
Thursday, December 17, 2020
Imec introduces 2D materials in the logic device scaling roadmap
More details can be found in 4 papers presented at the 2020 IEDM conference:
[1] ‘Introducing 2D-FETs in device scaling roadmap using DTCO’, Z. Ahmed et al.
[2] ‘Wafer-scale integration of double gated WS2-transistors in 300mm Si CMOS fab’, I. Asselberghs et al.
[3] ‘Dual gate synthetic WS2 MOSFETs with 120µS/µm Gm 2.7µF/cm2 capacitance and ambipolar channel’, D. Lin et al.
[4] ‘Sources of variability in scaled MoS2 FETs’, Q. Smets et al. (IEDM highlight paper)
Monday, December 7, 2020
High-quality HfS2 2D-material by ALD at 100°C
A high-quality 2D-material by #ALDep at 100°C! Yuanyuan's very systematic and complete study of the well-behaved surface chemistry performed in collaboration with 7 other groups @FAU_Germany is published in Adv. Mater. Interfaces:https://t.co/Y9g1RPsdTx pic.twitter.com/dW8bG0BHAD
— CTFM lab (@CtfmLab) December 6, 2020
Friday, January 24, 2020
Russian researchers obtain atomically thin molybdenum disulfide (2D) films on large-area substrates by ALD
An atomic layer deposition reactor from Picosun used for obtaining ultrathin molybdenum oxide films, which were subsequently sulfurized to 2D molybdenum disulfide. Image courtesy of the Atomic Layer Deposition Lab, MIPT
Two-dimensional materials are attracting considerable interest due to their unique properties stemming from their structure and quantum mechanical restrictions. The family of 2D materials includes metals, semimetals, semiconductors, and insulators. Graphene, which is perhaps the most famous 2D material, is a monolayer of carbon atoms. It has the highest charge-carrier mobility recorded to date. However, graphene has no band gap under standard conditions, and that limits its applications.
Wednesday, December 11, 2019
Imec shows excellent performance in ultra-scaled FETs with 2D-material channel
MoS2 is a 2D material, meaning that it can be grown in stable form with nearly atomic thickness and atomic precision. Imec synthesized the material down to monolayer (0.6nm thickness) and fabricated devices with scaled contact and channel length, as small as 13nm and 30nm respectively. These very scaled dimensions, combined with scaled gate oxide thickness and high K dielectric, have enabled the demonstration of some of the best device performances so far. Most importantly, these transistors enable a comprehensive study of fundamental device properties and calibration of TCAD models. The calibrated TCAD model is used to propose a realistic path for performance improvement. The results presented here confirm the potential of 2D-materials for extreme transistor scaling – benefiting both high-performance logic and memory applications.
Thursday, August 8, 2019
Atomic Layer Deposition of Emerging 2D Semiconductors, HfS2 and ZrS2, for Optoelectronics
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By Abhishekkumar Thakur
Sunday, April 1, 2018
ALD yields large crystalline 2D MoS2 thin films
The atomic layer deposition method could be used to make large crystalline 2D MoS2 thin films. https://t.co/6dLel1kYwM #materialsscience— MRS Bulletin (@MRSBulletin) March 24, 2018
Saturday, January 6, 2018
New ALD High-k / 2D MoS2 light-erasable memory suitable for large area manufacturing technology
"In general, system-on-panel (SOP) describes a new display technology in which both active and passive components are integrated in one panel package, typically on the same glass substrate (sometimes system-on-panel is also named system-on-glass)," coauthor Hao Zhu at Fudan University told Phys.org. "This is different from traditional display technologies such as cathode ray tube (CRT) displays. One major characteristic of SOP is the application of thin-film technology, such as low-temperature poly-silicon (LTPS) thin-film transistor (TFT) arrays on the glass substrate. However, silicon-based thin-film transistors are being replaced by TFTs with new materials with improved properties. The indium gallium zinc oxide (IGZO) or zinc tin oxide (ZTO) thin film mentioned in our paper is also a good example. [Phys.org]
"Currently, we are working on the large-scale integration of such light-erasable 2-D memory devices using programmable light pulses with controllable wavelength and pulse duration," he said. "We are using new material synthesis methods such as atomic layer deposition to grow large-area MoS2 and other 2-D ultra-thin films for circuit-level applications." [Phys.org]
Article: Long-Fei He et al. "Light-erasable embedded charge-trapping memory based on MoS2 for system-on-panel applications." Applied Physics Letters. DOI: 10.1063/1.5000552
Wednesday, September 27, 2017
AIXTRON provides novel deposition system to EPFL for 2D materials research
AIXTRON SE (FSE: AIXA), a worldwide leading provider of deposition equipment to the semiconductor industry, today announced that the École Polytechnique Fédérale de Lausanne (EPFL) in Lausanne (Switzerland) has purchased a BM NOVO system. This versatile tool which can produce virtually all variations of 2-dimensional materials (2D) required for emerging optoelectronic applications is dedicated to support the University’s research projects coordinated by Prof. Andras Kis and Prof. Aleksandra Radenovic.
AIXTRON’s BM NOVO system uses a unique combination of plasma-enhanced chemical vapor deposition (PECVD) technology and metal organic chemical vapor deposition (MOCVD) technology to enable the growth of high quality 2D materials such as transition metal dichalcogenides (TMDCs) e.g. molybdenum disulfide (MoS2) or tungsten diselenide (WSe2).
Source: Aixtron LINK
Wednesday, August 30, 2017
Webinar - ALD for 2D materials
- Atomic Layer Deposition for Graphene devices by Dr Daniel Neumaier, AMO GmbH
- Atomic Layer Deposition on and of 2D materials by Dr Harm Knoops, Oxford Instruments
Tuesday, August 22, 2017
Woah - Hafnium oxide as gate dielectric scales also in the 2D world
New ultrathin semiconductor materials exceed some of silicon’s ‘secret’ powers, Stanford engineers find
Sunday, July 2, 2017
New process for 2D MoS2 from Oxford Instruments
Source: Oxford Instruments LINK
Tuesday, April 25, 2017
Atomic Layer Deposition on 2D Materials by Incheon National University
Hyun Gu Kim and Han-Bo-Ram Lee*
Department of Materials Science and Engineering, Incheon National University, Incheon 22012, Korea
Chem. Mater., Article ASAP
DOI: 10.1021/acs.chemmater.6b05103
Publication Date (Web): April 25, 2017
New up&coming perspective: Atomic Layer Deposition on 2D Materials, by Han-Bo-Ram Lee #ALDep https://t.co/M7FzYUnSXp pic.twitter.com/lBoCdyo2lf— Chem of Materials (@ChemMater) April 25, 2017
Screen dump from The HBRL Group of Prof. Han-Bo-Ram Lee at Incheon National University in South Korea (LINK)
Thursday, September 8, 2016
Atomic layer deposition for two-dimensional materials (ALDfor2D) workshop
Key facts
Location: Eindhoven, The Netherlands
Participation: Free
Registration & more details: http://nanomanufacturing.nl/2DWorkshop/
Invited speakers
- Prof. Robert Wallace (University of Texas at Dallas, USA)
- Prof. Kim (Yonsei University, South Korea)
- Dr. Annelies Delabie (IMEC, Belgium)
- Dr. Ravi Sundaram (OIPT, UK)
- More to follow!
The workshop is sponsored by
Thursday, July 21, 2016
Ultratech CNT in Dublin at ALD2016 presenting latest work on Superconductivity, SAMS Area-Selective ALD (ASD), Molybdenum Nitride and product developments
Adam Bertuch*1, Brent Keller2, Ganesh Sundaram1, Jeffrey Grossman2
1Ultratech - Cambridge NanoTech, USA, 2Department of Material Science and Engineering, Massachusetts Institute of Technology, USATuesday 26 July: Plasma-enhanced deposition and etching - Tuesday 26 July 15:45-17:15
16:30-16:45
Ritwik Bhatia*1, Ralf Heilmann2, Alexander Bruccoleri3, Brandon Chalifoux2
1Ultratech-Cambridge Nanotech, USA, 2Massachusetts Institute of Technology, USA, 3Izentis LLC, USAWednesday 27 JULY: Noble metals - Wednesday 27 July 08:15-10:15
10:00-10:15
Laurent Lecordier*1, Silvia Armini2
1Ultratech Cambridge Nanotech, USA, 2Imec, BelgiumTuesday 26 July: Nucleation and area selective deposition 1 - Tuesday 26 July 11:00-12:30
11:00-11:15
Mark Sowa*1, Yonas Yemane2, J Provine3, Fritz Prinz4
1Ultratech/CNT, USA, 2Stanford University, Department of Applied Physics, USA, 3Stanford University, Department of Electrical Engineering, USA, 4Stanford University, Department of Mechanical Engineering and Department of Materials Science and Engineering, USATuesday 26 July: Poster session 2 - Tuesday 26 July 17:15-19:00
Thursday, February 11, 2016
Oregon State present ALD of 2D alternate channel material MoS2 on 6 inch wafers
Atomic layer deposition of two dimensional MoS2 on 150 mm substrates
Tuesday, January 19, 2016
Large area Self-Limiting Synthesis of Transition Metal Dichalcogenides by KEIT & Samsung Display
As you all know ALD is a self-limiting growth method,however in this case where growth occurs by the formation of multi-layer islands it is difficult to achieve the layer controllability needed when compared to CVD. That is why the research team states three important findings for ALD growth of 2D layer structured materials:
- Maximizing the self-limiting behavior of the ALD process to achieve layer controllability needed for a 2D structure by careful optimization of the process conditions (e.g., temperature, pressure, exposure of precursor/reactant)
- Careful selection of the precursor and reactant - in this study MoCl5 and H2S are used as the precursors.
- Understand the surface characteristics of the material being deposited.
Read all about it in the excellent open source report in published early this year in Scientific Reports:
Self-Limiting Layer Synthesis of Transition Metal Dichalcogenides
Scientific Reports 6, Article number: 18754 (2016), doi:10.1038/srep18754
This work reports the self-limiting synthesis of an atomically thin, two dimensional transition metal dichalcogenides (2D TMDCs) in the form of MoS2. The layer controllability and large area uniformity essential for electronic and optical device applications is achieved through atomic layer deposition in what is named self-limiting layer synthesis (SLS); a process in which the number of layers is determined by temperature rather than process cycles due to the chemically inactive nature of 2D MoS2. Through spectroscopic and microscopic investigation it is demonstrated that SLS is capable of producing MoS2 with a wafer-scale (~10 cm) layer-number uniformity of more than 90%, which when used as the active layer in a top-gated field-effect transistor, produces an on/off ratio as high as 108. This process is also shown to be applicable to WSe2, with a PN diode fabricated from a MoS2/WSe2 heterostructure exhibiting gate-tunable rectifying characteristics.