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TechInsights found Samsung DRAM chips in Samsung Galaxy S23 with Five EUV mask layers. These are from DRAM wafers produced in the so-called D1a node (or D1α, α as in alpha)
👉https://t.co/oSv4yiHJiB
— TechInsights (@techinsightsinc) May 1, 2023
Get your products to market faster: @TechInsightsinc found next-gen #DRAM found in the #GalaxyS23. @Samsung is the first company to apply five #EUV lithography masks on DRAM D1a, the first node to fully adopt EUVL for #DRAM. Learn more. #semiconductor pic.twitter.com/2Pqg7gKuE9
This is in line with a previous press release from Samsung (2020) so no real surprise here: Samsung Announces Industry’s First EUV DRAM with Shipment of First Million Modules – Samsung Global Newsroom
"EUV to be fully deployed from 4th-gen 10nm-class DRAM (D1a) next year"
EUV will be fully deployed in Samsung’s future generations of DRAM, starting with its fourth-generation 10nm-class (D1a) or the highly-advanced 14nm-class, DRAM. Samsung expects to begin volume production of D1a-based DDR5 and LPDDR5 next year, which would double manufacturing productivity of the 12-inch D1x wafers.
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