JSR, Lam Research, and SK hynix Push the Boundaries of ASML´s EUV Semiconductor Manufacturing

JSR Corporation, including its subsidiary Inpria Corporation, and Lam Research have entered into a cross-licensing and collaboration agreement to accelerate the development of next-generation semiconductor manufacturing technologies. The partnership combines JSR’s expertise in photoresists and advanced materials—anchored by Inpria’s metal-oxide resists (MORs) for extreme ultraviolet (EUV) lithography—with Lam’s leadership in wafer fabrication equipment and process technology. By sharing intellectual property and integrating complementary capabilities, the companies aim to address scaling and patterning challenges as chipmakers pursue smaller, denser, and more energy-efficient devices for advanced logic and memory applications.

Inpria’s MORs, based on spin-on tin-oxide materials, provide high EUV photon absorption, excellent etch resistance, and reduced line edge roughness compared with conventional organic resists. These materials are fully compatible with existing lithography systems, making them attractive for high-volume production. To meet growing demand, JSR is expanding its global footprint with new R&D facilities in Japan and a production plant in Korea set to begin operations in 2026. Lam Research complements this with its Aether® dry resist technology, which replaces wet spin-coating and development with fully dry, vapor-phase processes. This innovation improves uniformity, reduces stochastic defects, and strengthens EUV absorption, enabling higher resolution and sensitivity. Aether has demonstrated direct-print 28 nm pitch patterning for logic and is already being adopted by leading memory manufacturers, offering both performance advantages and sustainability gains through reduced chemical and energy use.

These advances align with a broader industry shift toward tighter integration of materials and equipment solutions, exemplified by SK hynix’s installation of the world’s first commercial High-NA EUV lithography tool, ASML’s TWINSCAN EXE:5200B, at its M16 fab in Icheon, South Korea. Featuring a numerical aperture of 0.55—compared with 0.33 in current Low-NA EUV systems—the High-NA platform boosts resolution by 40%, enabling transistors about 1.7× smaller and wafer transistor densities nearly 2.9× higher. For SK hynix, this milestone supports the development of next-generation DRAM, reduces process complexity, lowers costs, and strengthens competitiveness in AI memory and advanced compute markets.

As one of the “big three” memory makers alongside Samsung and Micron, SK hynix has established itself as the leader in high-volume DRAM manufacturing. It was the first to mass-produce DDR5 and high-bandwidth memory (HBM3), both essential for AI and high-performance computing. Its early adoption of EUV lithography for DRAM production—and now the industry-first deployment of ASML’s High-NA EUV system—underscores its position at the forefront of DRAM scaling and density. Together, the innovations from JSR, Inpria, Lam Research, and SK hynix illustrate how collaboration across the semiconductor ecosystem is driving the breakthroughs required to sustain Moore’s Law in the era of AI and advanced computing.

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Sources:

JSR Corporation/Inpria Corporation and Lam Research Enter Cross Licensing and Collaboration Agreement to Advance Semiconductor Manufacturing

Dry Resist Patterning Progress and Readiness Towards High NA EUV Lithography

INPRIA | A world leader world leader in metal oxide photoresist design, development and manufacturing

Inpria Co-Developing Metal Oxide Resist with SK hynix to Reduce Complexity of Patterning for Next-Generation DRAM | 2022 | News | JSR Corporation

SK hynix Introduces Industry’s First Commercial High NA EUV

3D Ferroelectric NAND for Ultra-High Efficiency Analog Computing-in-Memory by SK hynix

3D FeNAND with Ultra-High Computing-in-Memory Efficiency: AI models containing up to trillions of parameters require substantial memory resources to handle the vast amounts of data. Energy-efficient analog computing-in-memory (CIM) devices such as 3D vertical NAND architectures are emerging as potential solutions because they offer high areal density and are non-volatile. SK hynix researchers will detail how they achieved analog computation in ultra-high-density 3D vertical ferroelectric NAND (FeNAND) devices for the first time. They used gate stack engineering techniques to improve the analog switching properties of 3D FeNAND cells, and achieved an unprecedented ≥256-conductance-weight levels/cell. The 3D FeNAND arrays improved analog CIM density by 4,000x versus 2D arrays, and demonstrated stable multiply-accumulate (MAC) operations with high accuracy (87.8%) and 1,000x higher computing efficiency (TOPS/mm²) versus 2D arrays. This work provides an efficient method to implement the processing of hyperscale AI models in analog CIM chips for edge computing applications, where speed and low power operation are the critical requirements, not extreme accuracy.

 

Above:

(1)   is a comparison of 2D and 3D arrays for analog-CIM applications.

(2)   is a TEM analysis  of the 3D FeNAND, showing (a) a top-down view of the device; (b) a cross-sectional view at low magnification; (c) a cross-sectional view at high magnification; and (d) a schematic illustration of the FeFET cells in the 3D FeNAND array.

Source: 

IEDM 2024 Paper #38.1, “Analog Computation in Ultra-High Density 3D FeNAND for TB-Level Hyperscale AI Models,” J.-G. Lee and W.-T. Koo et all, SK hynix https://www.ieee-iedm.org/press-kit

South Korea's Exports Surge in August Driven by Semiconductors; SK Hynix Leads 1c DRAM Production, Samsung Confirms Investment for 2025 Launch; Both Giants to Adopt Next-Gen Photoresist Technologies

In the first 10 days of August 2024, South Korea's exports increased by 16.7% year-on-year, reaching $15.5 billion, driven primarily by a significant 42.1% surge in semiconductor exports. Other sectors like petroleum products and automobiles also saw growth, with automobile exports rising sharply by 63.9%. However, machinery product exports declined by 10.6%. Imports grew by 13.4% to $18.4 billion, resulting in a trade deficit of $2.9 billion. Notably, exports to major trading partners China and the United States increased by 10.7% and 27.7%, respectively. This continues a trend of export growth, marking the tenth consecutive month of gains as of July.

SK hynix has announced it will begin mass production of its 6th generation (1c) 10nm class DRAM in the third quarter of 2024, ahead of Samsung Electronics, which plans to start production by the end of the year. SK hynix has already established an internal road map to achieve customer certification and start production, potentially positioning itself to capture significant demand from major tech companies like Amazon and Microsoft once Intel certifies its DRAM for server use. The 6th generation DRAM, utilizing advanced Extreme Ultraviolet (EUV) lithography, promises higher chip yields and improved power efficiency compared to previous generations.

Samsung has confirmed its investment in the Pyeongtaek P4 plant for the production of 6th-generation 1c DRAM, with plans to begin mass production in June 2025. This next-generation DRAM, which uses 10nm-class technology, is still not commercialized globally, but Samsung and SK hynix are preparing for its mass production. Despite initial delays due to a downturn in the semiconductor market, Samsung is now expanding its P4 facility, initially installing NAND flash equipment and confirming plans for 1c DRAM production. The company also anticipates launching HBM4 using 1c DRAM by the second half of 2025, aligning with forecasts of significant growth in the memory industry's revenues.

Both Samsung and K Hynix plans to adopt Inpria's metal oxide resist (MOR) technology in the production of 1c DRAM, utilizing MOR to draw the finest lines on one of the five to six  EUV layers in the 1c DRAM. This adoption aims to enhance performance and reduce costs in future DRAMs. MOR is seen as a next-generation alternative to the chemically amplified resist (CAR) currently used in advanced chip lithography, addressing CAR's limitations in resolution, etching resistance, and line edge roughness. 

In 2021, JSR Corporation announced its acquisition of Inpria Corporation, the leading innovator in metal oxide photoresist technology for EUV lithography, solidifying its focus on advancing semiconductor materials.

Samsung is considering multiple suppliers for its EUV MOR photoresist needs beyond Inpria, including companies like Dupont, Dongjin Semichem, and Samsung SDI. These alternatives are currently being tested as the company explores the best options for its 1c DRAM production. 

Lam Research refers to its inorganic photoresist technology as "dry resist," which reportedly is expected to be supplied for Gen 7 10nm (1d) DRAM production, anticipated to launch next year. This dry resist is deposited by ALD and represents a further evolution in PR technology, potentially offering enhanced performance for the next generation of DRAM manufacturing.

Exports increase 16.7 percent in first 10 days of August - The Korea Times

SK hynix Leads with ‘6th Generation 10 nm’ DRAM Production Ahead of Samsung - Businesskorea

[News] Samsung Reportedly Confirms Investment in Pyeongtaek P4 Plant for 6th-Generation 1c DRAM | TrendForce Insights

SK Hynix to adopt Inpria MOR in 1c DRAM - THE ELEC, Korea Electronics Industry Media (thelec.net)

Samsung said to consider Inpria's metal oxide resist for 1c DRAM process (digitimes.com)

Samsung considering applying metal oxide resist in next DRAM - THE ELEC, Korea Electronics Industry Media (thelec.net)

SK hynix to Lead in Advanced DRAM Production, Overtaking Samsung with Earlier Start

Korean SK hynix is set to initiate mass production of its advanced 6th generation 10nm class DRAM (node 1c) in the third quarter of this year, ahead of its competitor Samsung Electronics. The move positions SK hynix to potentially lead in the DDR5 server memory market, which is needed for data centers operated by major tech companies. SK hynix has outlined a strategic internal roadmap that includes achieving necessary customer certifications in anticipation of a surge in demand, especially following compatibility approval with Intel's server platforms. This certification is crucial as Intel holds a dominant share in the global server CPU market. 

The DDR5 DRAM from SK hynix is designed to be compatible with Intel CPUs, a significant advantage given Intel’s extensive market presence. Meanwhile, Samsung plans to start its mass production of similar DRAM by the end of the year, having shared its development roadmap at the recent MemCon 2024 conference. Both companies are using leading-edge Extreme Ultraviolet (EUV) lithography in their processes, which enhances chip yield and power efficiency over previous generations.

SK hynix's new M16 DRAM plant in Icheon, Gyeonggi Province / Courtesy of SK hynix

Source: SK hynix Leads with ‘6th Generation 10 nm’ DRAM Production Ahead of Samsung - Businesskorea

SK Hynix Leads DRAM Industry's Rebound in Q2 with Revenue Surge, Reclaims No. 2 Position

South Korea's SK Hynix Inc. has orchestrated a substantial resurgence in the DRAM chip sector during Q2, propelling itself back to the second-largest global position and surging ahead of Micron Technology Inc., which now stands third. The chipmaker achieved a nearly 50% surge in DRAM shipments, propelling its revenue to $3.44 billion in the April-June period. Notably, SK Hynix excelled in DDR5 and HBM chip shipments, products with higher average selling prices (ASPs) than standard commodity DRAM items, thus enhancing its ASP growth by 7-9% compared to the previous quarter. In contrast, market leader Samsung Electronics experienced a 7-9% ASP drop while retaining its top position, and third-place Micron sustained relatively stable ASP with DDR5 shipments. The overall DRAM industry marked a 20.4% QoQ revenue increase in Q2, signaling a potential turnaround in the sector.

SK Hynix leads DRAM industry’s Q2 revenue rebound, retakes No. 2 spot - KED Global

Samsung Electronics Is Pushing Hard to Bring Monolithic 3D DRAM to HVM by 2025

Samsung Electronics has been enjoying its DRAM market leader position for about 30 years now. To retain the position further, it has intensified its R&D of monolithic 3D DRAMs to bring them to HVM by 2025.

DRAM’s performance boost based on scaling the cell size or pitch is approaching a physical limit for cramming more cells in a limited space. Additionally, the ultra-high aspect ratio capacitors may collapse leading to compromised device reliability. Therefore, switching from current 2D DRAMs to next-generation monolithic 3D DRAMs seems inevitable.

Samsung has reportedly intensified its R&D on stacking DRAM cells on top of each other in a monolithic fashion, unlike in the case of high-bandwidth memory (HBM), wherein multiple dies are stacked atop each other.

Besides High-k/Metal Gate transistor technology, Samsung is also considering adopting FinFET or gate-all-around (GAA) technology for the DRAM cell transistor to attain better electrostatic control of the charge flow within the channel with the gate electrode.

Micron Technology and SK Hynix are also reportedly developing monolithic 3D DRAMs. Micron recently filed a patent for a monolithic 3D DRAM that is different from that of Samsung. Micron’s approach is to change the shapes of the transistor and capacitor without laying down a cell. Major equipment manufacturers such as Applied Materials and Lam Research are also developing solutions for the monolithic 3D DRAMs.

By Abhishek Kumar Thakur & Jonas Sundqvist

Source: Samsung Electronics Gearing up to Develop World’s First 3D DRAM - Businesskorea

South Korean equipment makers recorded mixed results in the first quarter of 2021

출처 : THE ELEC, Korea Electronics Industry Media(http://thelec.net) - South Korean equipment makers recorded mixed results in the first quarter of 2021.

• Fab equipment vendors posted high growth, while display equipment firms underperformed.
• Fab equipment makers benefited from aggressive spending by semiconductor companies.
• CVD/ALD equipment companies showed good growth, see below (Jusung, Wonik IPD, Eugene Technologies

Semes, Samsung Electronics’ fab equipment subsidiary, recorded 870.6 billion won in sales, an increase of 62.3% from a year prior. It recorded 112.8 billion won in operating income, an increase of 40.5% over the same time period. The growth likely stems from Samsung starting to put in equipment to its P2 chip line at its Pyeontaek plant during the quarter. Overheat transport accounted for 60% of the sales recorded by Semes during the quarter.

SFA recorded 355.6 billion won in sales and 42.3 billion won in operating income, a drop of 3.3% and 1.6%, respectively, a year prior. Non-display business accounted for 65.1% of its sales. SFA, which previously focused on display kits, managed to record level earnings to a year prior thanks to other business areas.

Wonik IPS recorded 254.5 billion won in revenue and 24.2 billion won in operating income, a surge of 39.9% and 68.1%, respectively, from a year prior. The firm previously focused on fab equipment for use in memory chip production. But it has begun supplying kits for foundry beginning last year, which helped growth.

Eugene Technology recorded 100.7 billion won in revenue and 30.7 billion won in operating income. The company recorded an operating margin rate of 30.5%. Its LPCVD equipment supplied to SK Hynix for the latter’s M16 DRAM fab led the growth.

Jusung Engineering posted 75.3 billion won in sales in the quarter, double that of the year prior. It turned a profit from a year prior and posted 16 billion won in operating income. The company won the order for atomic layer deposition kits from SK Hynix for use in next-generation DRAMs. Jusung is the sole supplier of the kits.

Hanmi Semiconductor recorded 70.9 billion won in sales, a jump of 79% from a year prior. Its operating income increased 160% year-on-year to 19.3 billion won. It won 22 orders during the quarter. It has signed supply deals with SK Hynix, Amkor Technology Korea, ASE, NXP, Nanya, SPIL and others for a combined worth of 87 billion won.

YIK recorded 67.5 billion won in sales and 9.7 billion won in operating income, a jump of 99.7% and 177.1%, respectively, from a year prior. The firm mainly provides electrical die sorting equipment. The firm is seeing more orders from Samsung, having signed a 155.3 billion won deal with the tech giant in the first quarter alone.

South Korean fab equipment makers are expected to post solid growth throughout 2021 from increased spending this year by Samsung and SK Hynix. SK Hynix had said in the conference call for the first quarter that it plans to execute some of its spending it planned for 2022 earlier to this year.

SEMI is expecting global fab equipment spending to increase 15.5% this year to US$70 billion. Meanwhile, South Korean display equipment makers underperformed during the first quarter.

Samsung Display and LG Display have been conservative with their spending due to uncertainties surrounding the display market. But increased spending in OLED from Chinese panel makers such as BOE and Tianma staved off a huge dip in profitability.

Only few companies recorded growth, such as AP Systems, which saw sales drop 6.9% year-on-year but operating income surge 53.2% over the same time period. The company benefited from laser annealing equipment supplied to BOE for the B12 line.

Youngwoo DSP saw a surge in its operating income from supplies to its Chinese customers. KC Tech saw sales jump 21.1% but operating income remained flat. Top Engineering saw 9.6 billion won in operating loss from the 6.1 billion won operating loss posted by subsidiary Powerlogics. Dong A Eltek recorded 2.3 billion won in operating loss, though sales doubled. The firm said increased cost from the pandemic stunted growth.

Charm Engineering continued to record loss. HB Technology, Toptec and Philoptics all turned to the red. 

Local display equipment makers are expected to see a turnaround starting in the fourth quarter when Samsung Display and LG Display decide on new spending plans around the same time.

Tech Insights Teardown: Samsung’s D1z DRAM with EUV Lithography

Advanced and costly schemes for ArFi immersion-based multi-pattering are definitely running out of steam for leading-edge logic and EUV is continuing the march into high volume manufacturing now also for DRAM. The other day there was an announcement that SK Hynix, the world´s number two DRAM maker has signed a 5-year agreement with ASML for EUV scanners (LINK).

As a European, I must say that I like the situation that the key to continued scaling is kept in The Netherlands (ASML) and also the important key technology providers in Germany (Zeiss SMT, Trumpf) and Belgium in the form of the worlds leading research institute for scaling CMOS - imec and the EUV Resist Manufacturing & Qualification Center NV (EUV RMQC), a Joint Venture between imec and  JSR Micro NV (LINK).

Reuters: SK Hynix signs five-year deal worth $4.3 billion with ASML to secure EUV scanners

Now DRAMs from Samsung Electronics with applied EUV lithography technology for D1z DRAM in mass production have been found in the field and analyzed by Tech Insights and reported by EETimes (LINK).

According to EETimes, Samsung Electronics announced the world’s first development of both ArF-i based D1z DRAM and separately its EUV lithography (EUVL) applied D1z DRAM last year.

Tech Insights is excited that we have finally found Samsung’s new and advanced D1z DRAM devices and confirmed details of this technology.

Here just a teaser, please check out the original EETimes article or get the full report from Tech Insights (LINK).

Samsung DRAM cell design, a comparison of BLP patterns on D1z (a) without EUVL and (b) with EUVL.

TechInsights’ Memory Process: 3D NAND Word Line Pad webinar

TechInsights’ ‘Memory Process: 3D NAND Word Line Pad‘ #webinar compares 9x-layer 3D NAND devices from major manufacturers and discusses the process sequence with emphasis on the word line pad (WLP). Watch on demand here LINK 

 

Screendump from Webinar

Micron claim DRAM Technology Leadership As Samsung And SK Hynix Push Out EUV

• ASML reported that four EUV lithography systems will be pushed out from shipping in 4Q 2019.
• My analysis suggests Samsung Electronics and SK Hynix are two of the companies pushing our EUV for their memory business.
• Micron's 1z nm DRAM already is technologically advanced, and are two quarters ahead of Samsung and one year ahead of SK Hynix.

Full article: Micron: DRAM Technology Leadership As Samsung And SK Hynix Push Out EUV, Seeking Alpha (LINK)

A DRAM roadmap by the Information Network showing Micron’s transition to 1z nm and gain of leadership over rivals Samsung and SK Hynix.

Innovation and IP filing in Atomic Layer Deposition has moved from Memory to Logic

By studying the filing of IP world wide one can clearly see the trend how innovation in Atomic Layer Deposition (ALD) has moved from Memory to Logic. During the introduction of ALD (2003 to 2006) in high volume manufacturing of DRAM on 300 mm wafers most IP was filed by Samsung, Micron and SK Hynix. 10 years later (2013-2018) the IP filing lead has been taken over by Logic MPU manufacturers TSMC, Intel and Globalfoundries.

The patent application assignee from the past 25 years.