Tech Insights Teardown: Samsung’s D1z DRAM with EUV Lithography

Advanced and costly schemes for ArFi immersion-based multi-pattering are definitely running out of steam for leading-edge logic and EUV is continuing the march into high volume manufacturing now also for DRAM. The other day there was an announcement that SK Hynix, the world´s number two DRAM maker has signed a 5-year agreement with ASML for EUV scanners (LINK).

As a European, I must say that I like the situation that the key to continued scaling is kept in The Netherlands (ASML) and also the important key technology providers in Germany (Zeiss SMT, Trumpf) and Belgium in the form of the worlds leading research institute for scaling CMOS - imec and the EUV Resist Manufacturing & Qualification Center NV (EUV RMQC), a Joint Venture between imec and  JSR Micro NV (LINK).

Reuters: SK Hynix signs five-year deal worth $4.3 billion with ASML to secure EUV scanners

Now DRAMs from Samsung Electronics with applied EUV lithography technology for D1z DRAM in mass production have been found in the field and analyzed by Tech Insights and reported by EETimes (LINK).

According to EETimes, Samsung Electronics announced the world’s first development of both ArF-i based D1z DRAM and separately its EUV lithography (EUVL) applied D1z DRAM last year.

Tech Insights is excited that we have finally found Samsung’s new and advanced D1z DRAM devices and confirmed details of this technology.

Here just a teaser, please check out the original EETimes article or get the full report from Tech Insights (LINK).

Samsung DRAM cell design, a comparison of BLP patterns on D1z (a) without EUVL and (b) with EUVL.