Showing posts with label Micron. Show all posts
Showing posts with label Micron. Show all posts

Thursday, January 28, 2021

Micron Delivers Industry’s First 1α DRAM Technology

Micron recently announced that they are shipping memory chips built using the world’s most advanced DRAM process technology, which offers major improvements in bit density, power and performance. This is an astonishing feat of nanofabrication. 

Micron announcement: Micron Delivers Industry’s First 1α DRAM Technology

Micron’s 1α DRAM node will facilitate more power-efficient, reliable memory solutions and provide faster LPDDR5 operating speeds for mobile platforms that require best-in-class LPDRAM performance. Micron’s innovation brings the industry’s lowest-power mobile DRAM, with a 15% improvement in power savings,1 allowing 5G mobile users to perform more tasks on their smartphones without sacrificing battery life.

To find out more watch Thy Tran, vice president of DRAM Process Integration at Micron previously with Qimonda explain how to realize this amazing technology.


According to more details given in a Blog by Thy Tran, Micron uses Quadruple Patterning or Quad Patterning to realize the most critical lithography layers, which employ multiple ALD process steps and has become one of the biggest ALD market segment over recent years. See the video below by Lam Research for some more insights!


Quad patterning process flow (Image: Lam Research)



Wednesday, September 2, 2020

TechInsights’ Memory Process: 3D NAND Word Line Pad webinar

TechInsights’ ‘Memory Process: 3D NAND Word Line Pad‘ #webinar compares 9x-layer 3D NAND devices from major manufacturers and discusses the process sequence with emphasis on the word line pad (WLP). Watch on demand here LINK 

Screendump from Webinar

Saturday, November 2, 2019

Micron claim DRAM Technology Leadership As Samsung And SK Hynix Push Out EUV

  • ASML reported that four EUV lithography systems will be pushed out from shipping in 4Q 2019.
  • My analysis suggests Samsung Electronics and SK Hynix are two of the companies pushing our EUV for their memory business.
  • Micron's 1z nm DRAM already is technologically advanced, and are two quarters ahead of Samsung and one year ahead of SK Hynix.

Full article: Micron: DRAM Technology Leadership As Samsung And SK Hynix Push Out EUV, Seeking Alpha (LINK)


A DRAM roadmap by the Information Network showing Micron’s transition to 1z nm and gain of leadership over rivals Samsung and SK Hynix.

Thursday, August 22, 2019

Micron has started volume production of 10 nm-class DRAM (1z nm)

Micron announced on Thursday that it had started volume production of memory chips using its 3rd Generation 10 nm-class fabrication technology (also known as 1Z nm). The first DRAMs to be made using Micron’s 1Z nm process are 16 Gb monolithic DDR4 and LPDDR4X devices. 
The company claims that its 16 Gb DDR4 device consumes 40% less power than two 8 Gb DDR4 DRAMs (presumably at the same clocks). Meanwhile, Micron’s 16 Gb LPDDR4X ICs will bring an up to 10% power saving. One of the first products to use the company’s 16 Gb DDR4 devices will be high-capacity (e.g., 32 GB and higher) memory modules for desktops, notebooks, and workstations.
Source: Anandtech LINK
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By Abhishekkumar Thakur

Thursday, January 3, 2019

Innovation and IP filing in Atomic Layer Deposition has moved from Memory to Logic

By studying the filing of IP world wide one can clearly see the trend how innovation in Atomic Layer Deposition (ALD) has moved from Memory to Logic. During the introduction of ALD (2003 to 2006) in high volume manufacturing of DRAM on 300 mm wafers most IP was filed by Samsung, Micron and SK Hynix. 10 years later (2013-2018) the IP filing lead has been taken over by Logic MPU manufacturers TSMC, Intel and Globalfoundries.

The patent application assignee from the past 25 years.