SK hynix to Lead in Advanced DRAM Production, Overtaking Samsung with Earlier Start

Korean SK hynix is set to initiate mass production of its advanced 6th generation 10nm class DRAM (node 1c) in the third quarter of this year, ahead of its competitor Samsung Electronics. The move positions SK hynix to potentially lead in the DDR5 server memory market, which is needed for data centers operated by major tech companies. SK hynix has outlined a strategic internal roadmap that includes achieving necessary customer certifications in anticipation of a surge in demand, especially following compatibility approval with Intel's server platforms. This certification is crucial as Intel holds a dominant share in the global server CPU market. 

The DDR5 DRAM from SK hynix is designed to be compatible with Intel CPUs, a significant advantage given Intel’s extensive market presence. Meanwhile, Samsung plans to start its mass production of similar DRAM by the end of the year, having shared its development roadmap at the recent MemCon 2024 conference. Both companies are using leading-edge Extreme Ultraviolet (EUV) lithography in their processes, which enhances chip yield and power efficiency over previous generations.

SK hynix's new M16 DRAM plant in Icheon, Gyeonggi Province / Courtesy of SK hynix

Source: SK hynix Leads with ‘6th Generation 10 nm’ DRAM Production Ahead of Samsung - Businesskorea