Optimizing Atomic Layer Deposition Processes with Nanowire-Assisted TEM Analysis - Reducing Process Development CycleTimes by 80%

Researchers from  Empa, the Swiss Federal Laboratories for Materials Science and Technology located in Switzerland, have developed a novel method to optimize Atomic Layer Deposition (ALD) processes using high-aspect ratio nanowires coupled with Transmission Electron Microscopy (TEM). By directly depositing materials onto nanowires placed on TEM grids, the team was able to conduct immediate post-deposition analysis, significantly speeding up the optimization of process parameters such as layer thickness, chemical composition, and conformality. This approach allows for rapid feedback and adjustment, reducing the time required to fine-tune ALD processes by a factor of five. 

The study focused on optimizing the deposition of aluminum oxide using a standard trimethylaluminum (TMA) and water process. By varying cycle numbers, temperature, and pulse/purge times, the researchers identified optimal conditions for the ALD process, achieving a uniform and stoichiometric aluminum oxide layer. This method also revealed early-stage non-uniform growth in the initial cycles, providing new insights into ALD mechanisms. The researchers propose that this technique could extend beyond ALD to other deposition processes, offering a powerful tool for the rapid development and refinement of thin-film deposition technologies.

Source: Optimizing Atomic Layer Deposition Processes with Nanowire‐Assisted TEM Analysis - Schweizer - 2024 - Advanced Materials Interfaces - Wiley Online Library