#ALDALE2024 Plenary Talk provided by Tuomo Suntola with a full house. 50 Years in the making! @AVS_Members pic.twitter.com/9W106TGSWm
— Heather Korff (@HeatherKorff) August 5, 2024
Lotus Applied Technology reported: The research on ultra-high-speed spatial Plasma-Enhanced Atomic Layer Deposition (PEALD) introduces a novel approach to separating ALD half-reactions by leveraging a unique plasma-based mechanism. Instead of traditional differential flow and pumping, the process utilizes a gas shroud surrounding the plasma electrode, which facilitates the neutralization of oxidation radicals, preventing interaction with metal precursor vapors within the reactor. This method effectively separates the reactive species and allows for high deposition rates, achieving coating speeds over 25 angstroms per second for SiO₂ films. The process also includes innovations to reduce ozone byproducts, such as using carbon dioxide as the plasma gas and applying an active catalyst in the exhaust path (Lotus Applied Technology | Home).
ALD Program Chair:
Prof. Han-Bo-Ram (Boram) Lee
(Incheon National University, South Korea)
ALE Program Chair:
Prof. Heeyeop Chae
(Sungkyunkwan University, South Korea)