AlixLabs Qualifies APS™ for Use In 300-millimeter Silicon Wafer Designs

Swedish semiconductor startup clears technical hurdle for leading-edge process use on 300 mm wafer design*.

Scanning electron microscopy (SEM) images of amorphous silicon lines before (top) and after the APSTM process: nominal 40 nm line width and 40 nm half-pitch converted to lines with width below 15 nm and a half-pitch of 20 nm. Bild: Alixlabs

Stockholm, Sweden – September 12th, 2024 – AlixLabs AB, a Swedish semiconductor startup specializing in Atomic Layer Etching (ALE), announces that it has qualified its APS™ (ALE Pitch Splitting) process on a 300-millimeter silicon wafer design, marking one of its final steps towards commercial adoption. APS™ provides atomic-scale precision and pattern fidelity with critical dimensions below 15 nanometers for both single crystalline and amorphous silicon.

AlixLabs APS™ is designed to reduce the cost of leading-edge manufacturing, sub-7-nanometer, where feature sizes of less than 20 nanometers are required. An estimated cost saving of up to 40 percent per mask layer can be achieved with APS™ rather than relying on EUV lithography, and complex self-aligned multi patterning schemes.

AlixLabs' patented and wordmarked APS™ IP – short for Atomic Layer Etch (ALE) Pitch Splitting, here demonstrated in a simple animation.

“Proving that APS™ works on lithography designs on 300-millimeter wafers, is what we’ve all worked on since we founded AlixLabs in 2019,” says CEO and co-founder Dr. Jonas Sundqvist. “Not only do we aim to provide chip manufacturers wafer processing equipment that can create 20-nanometer half-pitch lines and critical dimension below 15 nanometers on silicon, we aim to do that at a lower cost and a more sustainable way than other technologies”

“We are also able to provide record breaking 3-nanometer critical dimension features on gallium phosphide (GaP) wafers today showing that APS™ can scale far into the future beyond what is needed today,” adds CTO and co-founder Dmitry Suyatin.

APS™ is positioned as an alternative to self-aligned double and quadruple patterning (SADP and SAQP). It allows for splitting dense line structures that can act as a foundation for transfer-etch into various materials such as dielectrics, metals, metal nitrides, and high-k dielectrics. The structures created with APS™ can also be used as-is for critical device features such as the fins in FinFET-type transistors due to extremely low surface damage.

AlixLabs’ goal is to supply leading semiconductor manufacturers, in both logic and memory segments. By enabling them to simplify and speed up their chip production at least fourfold for each critical mask layer by replacing four plasma wafer processing chambers in the SADP process flow with one APS™ chamber and eightfold correspondingly in SAQP. Finally, AlixLabs contributes overall to more sustainable semiconductor manufacturing.

*EBL patterned 300 mm wafers were provided by Fraunhofer IPMS Center Nanoelectronic Technologies (CNT) and financed by Ascent+ European Union's Horizon 2020 research and innovation program under GA No 871130.

Sources:

www.alixlabs.com

New Export Controls on ALD, ALE and ASD Technologies Effective September 2024 to Safeguard National Security

The US Bureau of Industry and Security (BIS) is introducing* stringent export controls targeting advanced technologies essential to national security, particularly within the semiconductor, quantum computing, and additive manufacturing sectors. These controls include new and revised Export Control Classification Numbers (ECCNs) and specific restrictions on critical equipment and materials, such as those involved in Gate-All-Around Field-Effect Transistor (GAAFET) technology, Atomic Layer Etching (ALE), and Atomic Layer Deposition (ALD). The controls aim to safeguard U.S. technological leadership while harmonizing with international export control standards. Specific restrictions apply to high-precision wafer processing equipment and isotopically enriched materials used in quantum computing, reflecting the critical importance of these technologies. These measures ensure that while international collaboration continues, sensitive technologies remain protected under national security protocols.

BIS has introduced new export controls focused on advanced technologies, particularly in the semiconductor, quantum computing, and additive manufacturing sectors. These controls include new Export Control Classification Numbers (ECCNs), revisions to existing ones, and the addition of new license exceptions for countries with similar technical controls. This rule aims to protect national security and advance foreign policy objectives by aligning U.S. export controls with those of international partners. The controls cover a wide range of items, including quantum computing technologies and semiconductor manufacturing equipment, reflecting the critical importance of these technologies to national security. The rule is effective immediately, though there are delayed compliance dates for certain items, allowing businesses time to adjust to the new requirements.

BIS has also established a framework to differentiate between items controlled multilaterally and those controlled through Implemented Export Controls (IEC), which are harmonized with international partners. The new regulations include provisions for annual reporting, particularly concerning the deemed export of quantum technology and software, highlighting the global nature of innovation in these fields. The rule is designed to support U.S. technology leadership while ensuring that export controls do not impede international collaboration, particularly in areas like quantum computing, where global expertise is crucial. Comments on the rule and its potential impact on supply chains and compliance programs are invited, with a focus on refining the scope and clarity of the new ECCNs and license exceptions.

BIS specifies that the restrictions on GAAFET (Gate-All-Around Field-Effect Transistor) technology primarily focus on the "technology" required for the "development" or "production" of GAAFET structures. This includes process recipes and other detailed specifications necessary for fabricating these advanced semiconductor devices. These restrictions are captured under ECCN 3E905, which applies to the "technology" for GAAFETs but does not extend to vertical GAAFET architectures used in 3D NAND. The export, reexport, or transfer of this technology to certain countries requires a license due to its national security and regional stability implications. However, the rules include specific exceptions for existing collaborations and provisions for continued access under certain conditions.

The specific wafer processing technologies restricted for export include:

Dry Etching Equipment:

Equipment designed for isotropic dry etching, as well as anisotropic etching of dielectric materials. These include technologies that enable the fabrication of high aspect ratio features, with aspect ratios greater than 30:1 and a lateral dimension on the top surface of less than 100 nn.  

The specific restrictions on Atomic Layer Etching (ALE) equipment are detailed under the export control regulations. The BIS has imposed controls on equipment designed or modified for anisotropic dry etching, which includes certain types of ALE equipment. These tools, particularly those using RF pulse-excited plasma, pulsed duty cycle excited plasma, and other advanced techniques, are now restricted due to their critical role in the precise fabrication of high-performance semiconductor devices. The restrictions apply to ALE equipment that is capable of producing high aspect ratio features, which are essential for advanced semiconductor manufacturing, making these tools subject to national security and regional stability controls .

Deposition Technologies:

Equipment designed for the selective bottom-up chemical vapor deposition (CVD) of tungsten fill metal, and other deposition processes such as those for tungsten nitride, tungsten, and cobalt layers. This also includes atomic layer deposition (ALD) equipment designed for area selective deposition of barriers or liners.

The restrictions on Atomic Layer Deposition (ALD) equipment are focused on several key types of equipment essential for advanced semiconductor manufacturing. Specifically, ALD equipment designed for area-selective deposition of barriers or liners using organometallic compounds is controlled. This includes equipment capable of area-selective deposition (ASD) that enables fill metal contact to an underlying electrical conductor without a barrier layer at the fill metal via interface to the conductor. Additionally, ALD equipment designed for depositing tungsten (W) to fill interconnects or channels less than 40 nm wide is also restricted. These restrictions are imposed due to the critical role these technologies play in the precision required for the fabrication of next-generation semiconductor devices.

These technologies are controlled under ECCNs (Export Control Classification Numbers) such as 3B001 and related classifications, and are subject to national security (NS) and regional stability (RS) controls.

The specific materials, chemicals, or precursors that are being restricted under the new export controls include:

These restrictions reflect the importance of controlling advanced materials that play a crucial role in emerging technologies, particularly those with significant national security implications, i.e., quantum technologies.

Epitaxial Materials: This includes materials with at least one epitaxially grown layer of silicon or germanium containing a specified percentage of isotopically enriched silicon or germanium. These materials are controlled due to their critical role in developing spin-based quantum computers.

Fluorides, Hydrides, Chlorides: Specific chemicals of silicon or germanium that contain a certain isotopic composition are also restricted. These chemicals are essential in semiconductor manufacturing processes, particularly in the development of quantum technologies.

Silicon, Silicon Oxides, Germanium, or Germanium Oxides: These materials, when isotopically enriched, are restricted due to their applications in quantum computing and other advanced technologies. The control extends to various forms such as substrates, lumps, ingots, boules, and preforms . 

* The new export controls introduced by the Bureau of Industry and Security (BIS) are effective as of September 6, 2024. However, there are delayed compliance dates for certain items, allowing businesses until November 5, 2024, to comply with the new requirements, particularly for specific quantum technologies and related equipment. This delayed compliance is intended to give affected parties time to adjust to the new regulations.

Source:

2024-19633.pdf (SECURED) (govinfo.gov)

Rising Prices of Critical Metals Highlight Their Importance in Semiconductor Manufacturing Amid Global Supply Challenges

Germanium, gallium, and antimony are crucial to the semiconductor industry due to their unique electrical properties that make them essential for producing advanced electronic components. Germanium is used as a semiconductor material, particularly in high-speed electronics and fiber optics, due to its excellent ability to efficiently transmit electrical signals. Gallium, often used in the form of gallium arsenide, is vital for producing high-performance chips, LEDs, and solar cells because it can operate at higher frequencies and temperatures than silicon. Antimony is used in creating semiconducting alloys and compounds that improve the efficiency and performance of devices like diodes and infrared detectors. These materials are key to advancing the capabilities of modern electronics, making them indispensable in the production of next-generation technologies.

The prices of rare earth metals, essential for semiconductor manufacturing, have more than doubled in the past year following China's retaliation against U.S. semiconductor restrictions. Notably, China's export restrictions on metals like germanium and gallium have caused significant price hikes, with germanium seeing a 115% increase to $2,600 per kilogram, up from $1,200 in the first quarter of 2023. Gallium prices have also surged by 75%, rising from around $300 per kilogram at the beginning of 2024 to approximately $530 today. These price increases reflect China's strategic control over these critical materials in response to global trade tensions.

                            Germanium price (LINK)

The situation is expected to worsen, with no signs of price relief on the horizon. Starting October 1, 2024, all rare earth metals in China will be effectively under state control, and the export of gallium and germanium has required a license since August 2023. China's tightening grip on these minerals is seen as a powerful tool to counter U.S. efforts to impede its advancement in semiconductor production. Currently, China dominates the global supply of these materials, producing 94% of the world's gallium and 73% of germanium in 2023, and its export volumes have reportedly dropped by up to 50% since the restrictions were imposed.

China's export restrictions on critical metals may impact US and European industries by causing supply shortages and driving up costs in the semiconductor and electronics sectors. These disruptions can slow production and raise consumer prices. Additionally, the restrictions may force companies to seek alternative, potentially more expensive, sources, straining global supply chains and weakening the competitive position of US and European industries.

Sources:

Halvledarmetaller skenar i pris – Semi14

China Warns Japan Over Semiconductor Export Curbs as US Pressure and Economic Tensions Mount

China has issued strong warnings to Japan against imposing new restrictions on the sale and servicing of chipmaking equipment to Chinese firms, in response to pressure from the United States. The US is seeking to align Japan with its own restrictive measures aimed at curbing China’s semiconductor advancements. Japan is concerned about potential retaliation from China, particularly the possibility that China might cut off access to critical minerals essential for its automotive industry, which could severely impact companies like Toyota. This echoes past instances where China restricted exports of rare earths to Japan during diplomatic tensions.

The US is also considering more stringent restrictions on chipmaking tools and high-bandwidth memory chips, crucial for AI development, as part of its broader strategy to limit China's technological progress. However, the US has so far refrained from using the foreign direct product rule (FDPR) against Japan, a powerful measure that could control sales of products worldwide if they use any American technology. While diplomatic efforts continue, the situation is complicated by upcoming political changes in Japan and the US, with Japan seeking to ensure its supply chain security while managing pressure from both China and the US.

China's heavy reliance on Japan for crucial semiconductor materials and equipment, such as high-end photoresists and wafer processing tools, significantly complicates its stance in the ongoing tech war with the US and Japan. Four Japanese companies—JSR, Tokyo Ohka Kogyo, Shin-Etsu Chemical, and Fujifilm Electronic Materials—dominate the global market for advanced photoresists, holding about 70% of the market share, making China highly dependent on them despite efforts to develop its own production capabilities. Additionally, Japan's Tokyo Electron, Screen Holdings, Nikon, Kokusai, and Lasertec are key suppliers of semiconductor wafer processing equipment to China. Japanese chemical companies, such as ADEKA Corporation, JSR Corporation, and Mitsui Chemicals, are key suppliers of CVD and ALD precursors. These companies produce a range of specialized chemicals used in semiconductor manufacturing, including organometallic precursors, silanes, and other complex compounds essential for deposition processes.

Japan's exports rose 5.4% year-on-year in June, cooling from 13.5% growth in May and underscoring concerns that a slowdown in China may hamper Japan's trade-reliant economy. The trade balance came to a surplus of 224.04 billion yen.

In June 2024, Japan's export growth slowed to 5.4% year-on-year, down from 13.5% in May, raising concerns that a slowdown in China could negatively impact Japan's trade-dependent economy. Despite a weak yen boosting the value of exports, the actual volume of exports declined by 6.2%, highlighting the challenges Japan faces with sluggish external demand. Exports to China, which grew by 7.2%, were primarily driven by chip-making equipment, but this growth was significantly lower than the 17.8% increase seen in May. The trade balance swung to a surplus of 224 billion yen, as imports grew less than expected, marking Japan's first trade surplus in three months. However, analysts express concern over the lack of a strong export growth engine among Japan's trading partners, including the United States, Europe, and China.

This dependency on Japanese technology and materials puts China in a vulnerable position as Japan faces increasing pressure from the US to align with stricter export controls, further raising the stakes in the ongoing geopolitical and economic tensions.

Sources

China Warns Japan of Retaliation for Possible New Chip Curbs - Bloomberg

Japan export growth cools amid worries about China slowdown | Reuters

Breakthrough by Japanese Researchers - Block Copolymer Enables Ultra-Fine Semiconductor Patterns with 7.6 nm Half-Pitch

Scientists at Tokyo Institute of Technology and Tokyo Ohka Kogyo have developed a novel block copolymer (BCP) that could significantly advance semiconductor manufacturing by enabling finer circuit patterns through directed self-assembly (DSA). This new BCP, derived from a chemically tailored version of polystyrene-block-poly(methyl methacrylate) (PS-b-PMMA), self-assembles into lamellar structures with a half-pitch size of just 7.6 nanometers. This surpasses the capabilities of conventional BCPs, which struggle to achieve sub-10 nm features, and represents one of the smallest reported half-pitch sizes in the world for thin-film lamellar structures.

a Schematic of the DSA process using a PS-b-PGFM on a chemically patterned Si substrate. AFM phase images of a b PS-b-PGFM19-23 film on an NL35-modified DSA substrate (Ls = 90 nm) after annealing at 240 °C for 5 min, c PS-b-PGFM19-10 film on an NL38-modified DSA substrate (Ls = 84 nm) after annealing at 230 °C for 5 min, and d PS-b-PGFM18-11 film on an NL38-modified DSA substrate (Ls = 90 nm) after annealing at 230 °C for 5 min. All thin films are 19-nm thick and were etched using O2 plasma for 10 s prior to AFM.

The research, published in *Nature Communications*, highlights the potential of this new BCP to push the boundaries of miniaturization in electronics, which is crucial for the continued advancement of semiconductor technology. The tailored copolymer, PS-b-PGFM, exhibits reliable and reproducible self-assembly into extremely small nanometric patterns, making it a promising template for lithographic processes. As the demand for smaller feature sizes in semiconductor devices grows, this breakthrough could pave the way for next-generation Logic and Memory components that all need to continuously scale to smaller critical dimensions.

Sources:

Advances in Semiconductor Patterning: New Block Copolymer Achieves 7.6nm Line Width - Semiconductor Digest (semiconductor-digest.com)

Chemically tailored block copolymers for highly reliable sub-10-nm patterns by directed self-assembly | Nature Communications

Impact of Deposition Mechanisms on Feature Sizes in Area-Selective Atomic Layer Deposition of TiO2 and HfO2

A study from Georgia Techinvestigates the mechanisms behind area-selective atomic layer deposition (AS-ALD) of titanium dioxide (TiO2) and hafnium dioxide (HfO2) on poly(methyl methacrylate) (PMMA) and silicon (Si) substrates, emphasizing their effects on feature sizes and film thickness. The researchers found that TiO2 exhibits highly selective deposition on Si compared to PMMA, though the PMMA sidewalls inhibit deposition, resulting in smaller feature dimensions than the original patterns. In contrast, HfO2, while less selective, combines selective deposition with a lift-off mechanism, allowing for smaller feature sizes but limiting the possible thickness before full coverage occurs.

The study highlights that TiO2's truly area-selective deposition mechanism causes significant sidewall inhibition, restricting the achievable feature size to larger dimensions. However, HfO2's combination of selective deposition and lift-off results in less sidewall inhibition, enabling the formation of much smaller features. The research further suggests that the choice of deposition material and the mechanism it employs critically influences the minimum feature sizes that can be achieved in semiconductor fabrication, with practical implications for future device miniaturization.

Summary of the mechanisms for AS-ALD of TiO2 and HfO2 using a PMMA area-selective mask, along with the corresponding benefits and limitations of each material. J. Phys. Chem. C 2024, XXXX, XXX, XXX-XXX

The findings underscore that the AS-ALD mechanism—whether a pure area-selective process or a combination with lift-off—directly affects the precision and scalability of nanofabrication. TiO2's area-selective mechanism is more effective for creating precise patterns but is limited by sidewall effects, while HfO2 offers greater flexibility in feature size at the cost of potential thickness limitations due to less selective deposition behavior. Potentially the research provides valuable insights for optimizing deposition techniques in advanced semiconductor manufacturing.

Source

Mechanisms of Area-Selective Atomic Layer Deposition and Their Impact on Feature Sizes | The Journal of Physical Chemistry C (acs.org)

Innovations in Atomic and Molecular Layer Deposition of Rare Earth-Based Functional Thin Films: Expanding Horizons in Electronics and Optoelectronics

In a recent article, researches from Germany (Bochum University) and Finland (Aalto University) explore the evolution and advancements in the atomic layer deposition (ALD) and molecular layer deposition (MLD) techniques for rare earth-based thin films, emphasizing their role in diverse applications ranging from microelectronics to optoelectronics and medical diagnostics. Initially focused on developing rare earth oxides as high-k dielectric materials in semiconductor devices, research has expanded to include complex ternary and quaternary perovskite oxides with unique magnetic and catalytic properties. The recent surge in ALD/MLD techniques has enabled the creation of rare earth-organic hybrid materials with intriguing luminescence properties, promising new avenues for applications in lighting, imaging, and solar cells.

Survey over the different rare earth precursor classes commonly employed for the ALD and ALD/MLD of rare earth containing thin films. Color bars indicate successful ALD employment of the compound class for the respective element. R represents an element of the extended rare earth elements, while R’ and R’’ refer to specific substituents. These are: H = Hydrogen, Me = Methyl, Et = Ethyl, iPr = Isopropyl, nBu = Butyl, tBu = Tert-butyl.

The review also highlights the challenges associated with precursor development and the need for further research to optimize the chemical reactivity and long-term stability of these materials. The potential for these novel materials to revolutionize industries is significant, particularly in the creation of flexible devices and advanced optoelectronic applications. However, according to the article, achieving widespread industrial adoption will require continued collaboration between academia and industry to refine processes, enhance material performance, and ensure scalability.

Annually published ALD and ALD/MLD articles involving rare earth elements from 1992 to 2023. The publications were searched from Scopus and Web of Science, using search terms that included “atomic layer deposition” and “rare earth”, or “atomic layer deposition” and “lanthanide”. The data thus acquired were further manually refined to check for numbers as accurate as possible. Data were accessed lastly on 10-02-2024.

Source: Atomic and Molecular Layer Deposition of Functional Thin Films Based on Rare Earth Elements - Ghazy - Advanced Materials Interfaces - Wiley Online Library

Optimizing Atomic Layer Deposition Processes with Nanowire-Assisted TEM Analysis - Reducing Process Development CycleTimes by 80%

Researchers from  Empa, the Swiss Federal Laboratories for Materials Science and Technology located in Switzerland, have developed a novel method to optimize Atomic Layer Deposition (ALD) processes using high-aspect ratio nanowires coupled with Transmission Electron Microscopy (TEM). By directly depositing materials onto nanowires placed on TEM grids, the team was able to conduct immediate post-deposition analysis, significantly speeding up the optimization of process parameters such as layer thickness, chemical composition, and conformality. This approach allows for rapid feedback and adjustment, reducing the time required to fine-tune ALD processes by a factor of five. 

The study focused on optimizing the deposition of aluminum oxide using a standard trimethylaluminum (TMA) and water process. By varying cycle numbers, temperature, and pulse/purge times, the researchers identified optimal conditions for the ALD process, achieving a uniform and stoichiometric aluminum oxide layer. This method also revealed early-stage non-uniform growth in the initial cycles, providing new insights into ALD mechanisms. The researchers propose that this technique could extend beyond ALD to other deposition processes, offering a powerful tool for the rapid development and refinement of thin-film deposition technologies.

Source: Optimizing Atomic Layer Deposition Processes with Nanowire‐Assisted TEM Analysis - Schweizer - 2024 - Advanced Materials Interfaces - Wiley Online Library

The 2024 1st Asian-Pacific Atomic Layer Deposition (AP-ALD) Conference Shanghai, China, from October 17 to 20, 2024

Following the successes of the previous four international Conferences on ALD Applications and ten China ALD Conferences since 2010. the 2024 1st Asian-Pacific Atomic Layer Deposition (AP-ALD) Conference will be a four-day meeting, dedicated to the fundamentals and applications of Atomic Layer Deposition (ALD) technology in various fields. It will be held in Shanghai, China, from October 17 to 20, 2024. This conference will feature plenary sessions, oral sessions, poster sessions and industrial exhibitions.

The ALD technique has been widely used and explored in numerous fields such as microelectronics, photoelectronics, optical coating, functional nanomaterials, MEMS/NEMS, energy storage, biotechnology, catalysis technology and etc. This is attributed to some unique advantages of ALD, including precise control of nano-scale thickness, superior uniformity across a large area, excellent conformity, relatively low deposition temperature and stoichiometric composition. Especially in the field of microelectronics, ALD has been involved deeply into advanced integrated circuits to prepare high-k/metal gate, spacer, and ultrathin diffusion barriers for Cu interconnects etc. Furthermore, ALD is also receiving great attention for its potential application in photovoltaics, flexible electronics, organic electronics, flat-panel display and other emerging areas.

Invited speakers: Invited Speakers – AP-ALD

Conference Web: AP-ALD – ALD2024

TSMC's 22ULL ReRAM with Ruthenium Layer Challenges Fujitsu's TaO-Based Technology with an Iridium layer in Embedded Memory Race

Techinsights reports (link below) that TSMC and Fujitsu are leading the charge in embedded ReRAM technology, with TSMC's new 22ULL eReRAM introducing a significant challenge to Fujitsu's established 40 nm TaO-based eReRAM. Both companies employ different resistive materials—Fujitsu uses a tantalum oxide (TaO) layer enhanced with an iridium layer, while TSMC incorporates a hafnium oxide (HfO) layer, paired with a ruthenium (Ru) layer, which enhances performance and reliability. TSMC's 22ULL platform, featuring this advanced HfO and Ru-based ReRAM, is set to challenge Fujitsu's position, especially in critical applications like automotive and IoT, where efficiency and capacity are paramount. With TSMC offering both eMRAM and eReRAM solutions, the competition between these technologies will significantly influence the future of embedded memory devices.

Other materials with similar resistive switching properties include: titanium oxide (TiOx), nickel oxide (NiO), zinc oxide (ZnO), zinc titanate (Zn2TiO4), Manganese oxide (MnOx), magnesium oxide (MgO), aluminum oxide (AlOx), and zirconium dioxide (ZrO2).

Screendumps from Techinsights website, Top an overview table and below TSMC resp. Fujitsu 28 nm ReRAM.

Sources:

TSMC vs. Fujitsu: A Brief Comparison of 22ULL Embedded ReRAM Technologies | TechInsights

South Korea's Exports Surge in August Driven by Semiconductors; SK Hynix Leads 1c DRAM Production, Samsung Confirms Investment for 2025 Launch; Both Giants to Adopt Next-Gen Photoresist Technologies

In the first 10 days of August 2024, South Korea's exports increased by 16.7% year-on-year, reaching $15.5 billion, driven primarily by a significant 42.1% surge in semiconductor exports. Other sectors like petroleum products and automobiles also saw growth, with automobile exports rising sharply by 63.9%. However, machinery product exports declined by 10.6%. Imports grew by 13.4% to $18.4 billion, resulting in a trade deficit of $2.9 billion. Notably, exports to major trading partners China and the United States increased by 10.7% and 27.7%, respectively. This continues a trend of export growth, marking the tenth consecutive month of gains as of July.

SK hynix has announced it will begin mass production of its 6th generation (1c) 10nm class DRAM in the third quarter of 2024, ahead of Samsung Electronics, which plans to start production by the end of the year. SK hynix has already established an internal road map to achieve customer certification and start production, potentially positioning itself to capture significant demand from major tech companies like Amazon and Microsoft once Intel certifies its DRAM for server use. The 6th generation DRAM, utilizing advanced Extreme Ultraviolet (EUV) lithography, promises higher chip yields and improved power efficiency compared to previous generations.

Samsung has confirmed its investment in the Pyeongtaek P4 plant for the production of 6th-generation 1c DRAM, with plans to begin mass production in June 2025. This next-generation DRAM, which uses 10nm-class technology, is still not commercialized globally, but Samsung and SK hynix are preparing for its mass production. Despite initial delays due to a downturn in the semiconductor market, Samsung is now expanding its P4 facility, initially installing NAND flash equipment and confirming plans for 1c DRAM production. The company also anticipates launching HBM4 using 1c DRAM by the second half of 2025, aligning with forecasts of significant growth in the memory industry's revenues.

Both Samsung and K Hynix plans to adopt Inpria's metal oxide resist (MOR) technology in the production of 1c DRAM, utilizing MOR to draw the finest lines on one of the five to six  EUV layers in the 1c DRAM. This adoption aims to enhance performance and reduce costs in future DRAMs. MOR is seen as a next-generation alternative to the chemically amplified resist (CAR) currently used in advanced chip lithography, addressing CAR's limitations in resolution, etching resistance, and line edge roughness. 

In 2021, JSR Corporation announced its acquisition of Inpria Corporation, the leading innovator in metal oxide photoresist technology for EUV lithography, solidifying its focus on advancing semiconductor materials.

Samsung is considering multiple suppliers for its EUV MOR photoresist needs beyond Inpria, including companies like Dupont, Dongjin Semichem, and Samsung SDI. These alternatives are currently being tested as the company explores the best options for its 1c DRAM production. 

Lam Research refers to its inorganic photoresist technology as "dry resist," which reportedly is expected to be supplied for Gen 7 10nm (1d) DRAM production, anticipated to launch next year. This dry resist is deposited by ALD and represents a further evolution in PR technology, potentially offering enhanced performance for the next generation of DRAM manufacturing.

Exports increase 16.7 percent in first 10 days of August - The Korea Times

SK hynix Leads with ‘6th Generation 10 nm’ DRAM Production Ahead of Samsung - Businesskorea

[News] Samsung Reportedly Confirms Investment in Pyeongtaek P4 Plant for 6th-Generation 1c DRAM | TrendForce Insights

SK Hynix to adopt Inpria MOR in 1c DRAM - THE ELEC, Korea Electronics Industry Media (thelec.net)

Samsung said to consider Inpria's metal oxide resist for 1c DRAM process (digitimes.com)

Samsung considering applying metal oxide resist in next DRAM - THE ELEC, Korea Electronics Industry Media (thelec.net)

ALD for Industry, March 11-12, 2025 in Dresden

The 8th International Conference “ALD FOR INDUSTRY” will again bridge the gap between fundamental science, industrialization and commercialization of this technology. Atomic layer deposition (ALD) is a process for depositing a variety of thin film materials from the vapor phase of matter. The growth of this technology is not only based in microelectronics applications, but also in areas of industrial Li-Ion batteries, photovoltaics, optics, light, biomedicine and quantum technology.

This event is already establied since 2017 and attracts annually more than 100 participants and numerous exhibitors to visit Dresden. The Conference with Tutorial provides the opportunity to learn more about fundamentals of ALD technology, to get informed about recent progress in the field and to get in contact with industrial and academic partners. Increase your visibility and present your company in our accompanying exhibition.

The next event will take place in March 11 – 12, 2025 in Dresden. Please do not miss the chance to submit your abstract to present your recent research in the field of ALD, show application examples or present accompanying technologies like metrology, combinations of technological approaches like plasma technology or vacuum technologies.

You would like to present your new developments and research results?

Please send your abstract to info@efds.org until September 15, 2024.

Forge Battery Begins Shipping High-Energy 300 Wh/kg Lithium-Ion Cells Made in The USA

Forge Battery, a subsidiary of Forge Nano, has initiated the shipment of its advanced 21700 cylindrical lithium-ion battery cells, branded as “Gen. 1.1 Supercell,” to customers and potential partners. The cells, which boast a specific energy of 300 Wh/kg, have passed rigorous safety certifications (UN 38.3 and UL 1642), allowing for safe transportation. The company plans to deliver thousands of cells throughout 2024, fulfilling existing customer commitments and generating interest from new markets. These cells are designed with over 20% silicon in the anode and use NMC 811 cathodes, outperforming U.S. Advanced Battery Consortium (USABC) energy density targets and reducing costs by 20% per kWh.

The Supercells incorporate Forge Nano’s proprietary Atomic Armor™ coating technology, enhancing the durability and performance of the cells by preventing unwanted chemical reactions. With 90% of the materials sourced from U.S. suppliers, Forge Battery is set to become a key player in the domestic battery market, aiming for full-scale production at its upcoming North Carolina Gigafactory in 2026. These cells are targeted at high-performance applications, including electric trucks, aerospace, and defence, with the potential to outcompete current Tier 1 global suppliers.

Source:

Forge Battery Begins Bulk Customer Shipments of 300 Wh/kg Lithium-Ion Battery Cells - Forge Nano

JSR Corporation Completes Strategic Acquisition of Yamanaka Hutech Corporation to Bolster Semiconductor Materials Portfolio with CVD and ALD Precursors

On August 2, 2024, JSR Corporation announced the successful acquisition of Yamanaka Hutech Corporation, a renowned supplier of high-purity chemicals for the semiconductor industry. The acquisition, finalized on August 1, 2024, positions YHC as a wholly-owned subsidiary of JSR. This strategic move allows JSR to enhance its product offerings, particularly in semiconductor film-forming technologies, and aligns with its growth strategy aimed at strengthening its presence in the advanced semiconductor materials sector. JSR is committed to driving innovation, optimizing supply chains, and maintaining strong customer relationships as the semiconductor industry undergoes significant changes.

JSR Corporation's acquisition of Yamanaka Hutech Corporation (YHC) brings YHC's high-purity CVD and ALD precursors into JSR's portfolio, enhancing its capabilities in semiconductor materials. YHC, with over 60 years of expertise in advanced molecular design and synthesis technology, has a strong track record in supplying high-quality CVD/ALD precursors, particularly in competitive ALD material areas. This acquisition allows JSR to diversify beyond its traditional focus on photoresists and strengthens its position as a global leader in advanced semiconductor materials, poised to drive innovation in both miniaturization and device structure advancements.

Sources:

JSR Completes Acquisition of All Shares in Yamanaka Hutech ~ Accelerating Semiconductor Materials Industry Reorganization~ | 2024 | News | JSR Corporation

JSR to make Yamanaka Hutech, a high-purity chemical for semiconductors, a wholly owned subsidiary ~Expanding the product portfolio in the field of cutting-edge semiconductor deposition~ | 2024 | News | JSR Corporation

Jusung Engineering Posts Stellar Q2 Recovery with 207% Sales Surge, Driven by Semiconductor Market Rebound

Jusung Engineering reported a robust financial recovery in the second quarter of 2024, with sales soaring by 207% to 97.3 billion won ($72.0 million) compared to the same period last year, and an operating profit margin of 37%. This turnaround follows a challenging first quarter and is driven by increased orders and deliveries of semiconductor equipment, including a significant contract with SK Hynix for DRAM manufacturing in China. The company's expertise in Atomic Layer Deposition (ALD) technology and its expansion into OLED and solar power sectors position it well for continued growth as the semiconductor market rebounds.

Sources:

Jusung Engineering Reports Robust Q2 Results with 207% Sales Growth - Businesskorea

Materion Achieves Record-Breaking Q2 Results, Strengthened by Consumer Electronics and Aerospace Growth

Materion is a major Tier 2 supplier of ALD precursors to the big Tier 1 companies. In the second quarter of 2024, Materion Corporation delivered record-breaking results, reflecting the company's recovery after a challenging start to the year. The improvement was primarily driven by organic growth initiatives, strong operational performance, and cost management. Key areas of growth included aerospace and defense, consumer electronics, and a gradual recovery in the semiconductor market. Despite some softness in industrial and automotive sectors, Materion secured several new business partnerships, particularly in aerospace and defense, bolstering long-term growth prospects. The company also achieved its midterm EBITDA margin target of 20% for the third time in five quarters and remains focused on operational excellence and sustainable earnings growth for the remainder of the year.

2024 Outlook

• Semiconductor market recovery slower than prior expectations
• Continued benefit from cost improvement initiatives

Specifically, Materion's expansion into ALD products has been significant for supporting advanced semiconductor production, especially in the context of rapid digitization and AI advancements. The company received an excellent supplier award from a leading ALD customer, highlighting its successful innovation in ALD materials. This expansion into ALD not only supports complex chip production but also positions Materion to capitalize on the growing demand in the semiconductor industry. Despite a slower-than-expected semiconductor market recovery, the company's strategic moves in ALD and other high-tech sectors are expected to drive continued growth and margin expansion in the future.

Materion Corporation has significantly expanded its capabilities in ALD products, particularly focusing on advanced materials for the semiconductor industry such as Hafnium and Molybdenum. The company produces ALD precursors, which are critical for creating the ultra-thin films required in the manufacturing of next-generation semiconductor chips. Recently, these materials also include tantalum and niobium-based compounds, which were added to Materion's portfolio following the acquisition of H.C. Starck's electronic materials business in 2021.

Materion's new facility in Milwaukee, Wisconsin, is dedicated to enhancing the production of these ALD materials, positioning the company as a key supplier in the high-growth semiconductor market. The facility also supports the development of next-generation battery technologies for electric vehicles, indicating the strategic importance of ALD materials in both semiconductor and EV markets​

Sources:

Atomic Layer Deposition

Business Wire

Materion Corporation (MTRN) Q2 2024 Earnings Call Transcript | Seeking Alpha

ACM Research Advances in ALD with Ultra FnA Furnace System for Semiconductor Manufacturing

ACM Research, a US company specializing in wafer cleaning equipment for the semiconductor industry, presents a strong growth opportunity. The company beat Q2 estimates, raised its fiscal year guidance, and is well-positioned to benefit from the expected significant growth in the wafer cleaning equipment market, particularly in China. ACM Research's competitive advantages include high investment in R&D and the ability to provide highly customized solutions. 

The Ultra FnA Furnace System by ACM Research is designed for the precise and uniform deposition of ultra-thin films using thermal Atomic Layer Deposition (ALD), which is essential for advanced integrated circuits (ICs) and compound semiconductor manufacturing as logic nodes shrink. It effectively deposits silicon nitride (SiN) and silicon carbide nitride (SiCN) on high aspect ratio 3D structures, such as FinFETs and nanosheets, ensuring good step coverage and uniformity across wafers. The system boasts superior process control through its innovative hardware and proprietary algorithms, offering high-throughput batch processing, cost-effectiveness, and customization for various advanced semiconductor processes, with the capability to process up to 100 wafers at a time.

ACM Research Advances in ALD with Ultra FnA Furnace 300 mm System for Semiconductor Manufacturing

About ACM Research

ACM Research offers a comprehensive portfolio of tools designed to support various semiconductor manufacturing applications, including ICs, compound semiconductors, wafer-level packaging, and wafer manufacturing. Their advanced product range includes solutions for multiple processing steps such as wet cleaning, electroplating, thermal deposition, ALD, and more. Known for delivering customized, high-performance technology that enhances productivity and efficiency, ACMR is committed to meeting the diverse needs of high-volume manufacturing with a low cost of ownership. With a strong IP portfolio and a global presence, ACMR leverages its extensive industry expertise and international support network to provide innovative solutions and world-class service to customers across Asia, North America, and Europe. Founded in California in 1998, the company operates manufacturing and support facilities in China and South Korea.

Sources:

Ultra FnA ALD Furnace System - ACM Research, Inc.

ACM Research: A Promising Semiconductor Growth Opportunity Outpacing Risks (NASDAQ:ACMR) | Seeking Alpha

The AVS ALD ALE 2024 Conference in Helsinki - Record Breaking Attendance and Deposition Speed of ALD

The AVS ALD ALE 2024 conference in Helsinki, Finland, which took place from August 4-7, 2024, attracted significant attention number of delegates (number still pending) and reporting on social media among professionals in the field of atomic layer deposition and etching. Participants and companies highlighted key moments and innovations presented during the conference.

One of the major highlights shared on platforms like X/Twitter was the celebration of the 50th anniversary of Atomic Layer Deposition (ALD), with special recognition given to Dr. Tuomo Suntola, the pioneer of ALD technology. His opening remarks were highly anticipated and well-received, marking a significant milestone in the field.

#ALDALE2024 Plenary Talk provided by Tuomo Suntola with a full house. 50 Years in the making! @AVS_Members pic.twitter.com/9W106TGSWm

— Heather Korff (@HeatherKorff) August 5, 2024

Attendees shared their experiences from the welcome reception and the technical sessions, with many noting the high caliber of presentations and the importance of networking opportunities provided by the event under the tag #ALDALE2024 (#ALDep - Search / X (twitter.com)). Overall, social media posts reflected an as usual vibrant and engaged ALD & ALE community, excited about the advancements and collaborations emerging at AVS ALD 2024 in Helsinki.

The 2024 Chairs for ALD Prof. Mikko Ritala and Prof. Markku Leskelä and for ALE Prof. Fred Roozeboom and Dr. Dmitry Suyatin. In the middle ASM Internationals former CTO Ivo Raaijmakers and on the rigt Dr. Tuomo Suntola, The ALD Inventor himself. LINK

The largest group photo at the ALD/ALE 2024 backdrop by registration - Helsinki University! LINK

A Crowded House for the Plenary by Dr. Suntola. LINK

Congratulations to ALD Innovator Awardee Annalise Delabie also presenting to a full house! LINK

Plenary talk by Ivo Raaijmakers, The leading ALD company ASM International. LINK

Best poster ALD 2024 Award by BALD Engineering. Thermal Ru without desalination by Parmish Kaur. LINK

One of numerous Finnish Sauna Events LINK

ALD Tough Guys and social events. LINK

Additionally, the leading ALD & ALE companies showcased their latest advancements. For example, Lotus Applied Technology drew attention for their presentation on ultra-high-speed ALD film growth, achieving deposition rates of 30 Å/second while maintaining film uniformity. This breakthrough was a trending topic among attendees, reflecting the ongoing innovation in the ALD sector.

Lotus Applied Technology reported: The research on ultra-high-speed spatial Plasma-Enhanced Atomic Layer Deposition (PEALD) introduces a novel approach to separating ALD half-reactions by leveraging a unique plasma-based mechanism. Instead of traditional differential flow and pumping, the process utilizes a gas shroud surrounding the plasma electrode, which facilitates the neutralization of oxidation radicals, preventing interaction with metal precursor vapors within the reactor. This method effectively separates the reactive species and allows for high deposition rates, achieving coating speeds over 25 angstroms per second for SiO₂ films. The process also includes innovations to reduce ozone byproducts, such as using carbon dioxide as the plasma gas and applying an active catalyst in the exhaust path​ (Lotus Applied Technology | Home).

At the end the AVS ALD ALE 2025 was presented: The AVS 25th International Conference on Atomic Layer Deposition (ALD 2025) featuring the 12th International Atomic Layer Etching Workshop (ALE 2025) will be a three-day meeting dedicated to the science and technology of atomic layer controlled deposition of thin films and atomic layer etching. Since 2001, the ALD conference has been held alternately in the United States, Europe and Asia, allowing fruitful exchange of ideas, know-how and practices between scientists. The conference will take place Sunday, June 22-Wednesday, June 25, 2025, at the International Convention Center Jeju (ICC Jeju), Jeju Island, South Korea. ald2025 (avs.org)

ALD Program Chair:
Prof. Han-Bo-Ram (Boram) Lee
(Incheon National University, South Korea)


ALE Program Chair:
Prof. Heeyeop Chae
(Sungkyunkwan University, South Korea)

The 2024 Chairs handing over to the 2025 Chairs in Korea. LINK

Lithography Materials Headed for Upwards Growth

PFAS elimination efforts expected to drive migration to photoresist alternatives

San Diego, CA, August 8, 2024: TECHCET— the electronic materials advisory firm providing business and technology information —is forecasting semiconductor photoresist revenues to increase by nearly 11% in 2024. Overall semiconductor market recovery is expected in 2024, particularly in the second half, which should drive increased demand for all resists. In parallel, photoresist ancillaries are expected to increase by around 10%, and extensions by around 9%. More details on photoresist volume and revenue forecast by material can be found in TECHCET's new Lithography Materials Critical Materials Report™.

Recent pushes in the EU and US to eliminate PFAS-related chemicals are expected to gradually impact future photoresist material compounds. Photoresists that use photoacid generating (PAG) compounds have been qualified and used for many years, making it challenging to switch away to alternatives. While numerous companies and universities are working to develop non-PFAS-related PAGs, current performance is not yet meeting all process requirements. Consequently, defining suitable non-PFAS PAG alternatives and transitioning effectively is expected to take 5-10 years.

To read the full article, go to: https://lnkd.in/gKadBq7Z

The newly released TECHCET Critical Materials Reports™ on Lithography Materials contains details on market and technology trends and supplier profiles. For the full table of contents or to request a sample report, visit https://lnkd.in/esXU6SW

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AVS ALD/ALE conference returns to Helsinki after 20 years to celebrate 50 years of ALD!

The AVS 24th International Conference on Atomic Layer Deposition (ALD 2024), alongside the 11th International Atomic Layer Etching Workshop (ALE 2024), will be held from August 4-7, 2024, at Messukeskus in Helsinki. Organized by the American Vacuum Society (AVS), the event returns to Helsinki after 20 years to mark the 50th anniversary of Dr. Tuomo Suntola's pioneering work on ALD. Dr. Suntola, who received the Millennium Technology Prize in 2018 for his contributions to ALD, will deliver the opening remarks. Professors Mikko Ritala and Markku Leskelä from the Department of Chemistry serve as the program chairs for this year's conference.

The ALD conference, focusing on the science and technology of atomic layer controlled deposition and etching of thin films, alternates between the United States, Europe, and Asia. The last Helsinki event in 2004 celebrated 30 years of ALD. This year's conference is expected to break attendance records with nearly one thousand participants and received an unprecedented 502 abstracts. The event highlights significant industry involvement, with 55% participation from industry representatives last year

The plenary talk will be given by Dr. Ivo J. Raaijmakers of ASM, The Netherlands, emphasizing the long-standing collaboration between the University of Helsinki and ASM. Countries contributing the most abstracts include the United States, South Korea, Germany, Finland, the Netherlands, and Japan.

ALD/ALE conference returns to Helsinki after 20 years | Faculty of Science | University of Helsinki

Conference page: ald2024 (avs.org)