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Tyler J. Myers has launched a new initiative called The ALDepartment, following his departure from the ALD Stories podcast. This project aims to delve deeper into the field of Atomic Layer Deposition (ALD) by creating a platform that encompasses a wide array of ALD-related topics. The ALDepartment, hosted on YouTube, is set to feature educational content, interviews with influential figures in the ALD community, commentary on recent developments within the field, and even some entertainment-focused videos.
Myers' first video on the channel serves as an introduction, outlining his motivations for starting this venture and what viewers can expect from future content.
Yole Group reports that the compound semiconductor substrate market is on the brink of a significant transformation, poised to reach a staggering US$3.3 billion by 2029, with an impressive compound annual growth rate of 17% from 2023 to 2029. This growth is underpinned by the relentless innovation and strategic foresight of leading players like Wolfspeed and Coherent, who are continuously refining their product portfolios and expanding their market footprints.
Atomic Layer Deposition (ALD) and Atomic Layer Etching (ALE) play specific roles in the compound semiconductor industry. ALD is used to apply ultra-thin layers crucial for semiconductor devices, especially in insulating layers and gate dielectrics in transistors. ALE, with its precise etching capability, is key for crafting fine details in devices, often used in the patterning of nanoscale structures in LEDs and high-frequency transistors. These technologies support the development of advanced, reliable applications in power electronics and photonics.
At the heart of this industry evolution are the advancements in compound semiconductor technologies, spanning materials such as Silicon Carbide (SiC), Gallium Nitride (GaN), and Indium Phosphide (InP). These materials are catalyzing a revolution across various sectors, with SiC leading the charge in the automotive industry, particularly within the burgeoning 800V electric vehicle segment. GaN, on the other hand, is making inroads into consumer electronics and automotive applications, promising to redefine power electronics with its superior efficiency.
The impact of compound semiconductors extends beyond power electronics into the realm of photonics, where InP and GaAs are setting new benchmarks. InP, for instance, is witnessing a resurgence, driven by its critical role in AI applications, while GaAs photonics continues to grow, albeit at a steadier pace.
Yole Group, a market research and strategy consulting firm, in its latest "Status of Compound Semiconductors Industry 2024" report, provides an exhaustive analysis of these trends. The report delves into each substrate's market dynamics and technological advancements, offering a comprehensive overview of the ecosystem.
LINK: Compound semiconductors industry: an unprecedented promise (yolegroup.com)
As the industry stands at the precipice of transitioning to larger diameter substrates, the demand for high-data-rate lasers in AI is pushing for a shift to 6” InP substrates. Concurrently, GaAs is exploring the potential of 8” manufacturing for MicroLEDs, despite the challenges it faces against OLED technology.
In this dynamic landscape, companies like Wolfspeed and Coherent are not just participants but are leading the charge towards a more efficient, technologically advanced future. Their efforts in expanding material capacity and forging strategic alliances are testament to the industry's readiness to embrace the next wave of semiconductor innovation.
We are proud to be Gold Sponsors of ALD/ALE 2024 in Helsinki, Finland . We look forward to contribute to the conference program and meet you in the exhibition. We especially look forward to join the celebration 50 Years of ALD and honor the inventor and Millennium Prize Winner 2018 Dr. Tuomo Suntola.
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In the dynamic world of material science, the recent Applied Materials Picosun webinar held on January 16, 2024 centered on Atomic Layer Deposition (ALD) and Molecular Layer Deposition (MLD), offered a deep dive into these groundbreaking technologies and their applications in crafting advanced functional properties.
The webinar was given by Topias Jussila, Doctoral Researcher, Aalto University, Finland. Let's explore how ALD and MLD are shaping the future of materials at the nanoscale.
The Emergence of MLD
Molecular Layer Deposition, though a relative newcomer compared to ALD, has quickly garnered attention for its unique capabilities. MLD, which operates on the principle of sequential molecular layering, offers a versatile platform for creating hybrid materials with tailored properties. The webinar expertly delineated the different types of MLD, such as metal-aliphatics, metal-aromatics, and inorganic-organic multilayers, each presenting its distinct advantages in material fabrication.
Synergy of ALD and MLD
The fusion of ALD with MLD emerged as a focal point of discussion. This combination enhances the material properties, allowing for precise control at the nanoscale. The synergy of ALD and MLD opens doors to innovative applications, particularly in microelectronics and nanotechnology, by creating materials with unprecedented electrical, optical, and mechanical properties.
Applications That Reshape Industries
The practical applications of MLD and ALD-MLD are vast and varied. Key areas include:
Flexible Barrier Layers: MLD is particularly effective in creating ultra-thin, flexible barrier layers that are impermeable to gases and moisture. This is crucial for applications like organic light-emitting diode (OLED) displays and flexible electronics, where moisture and oxygen can degrade the performance of the devices.
Encapsulation: MLD provides an excellent method for encapsulating sensitive components, protecting them from environmental factors without compromising their functionality.
Photocatalysis: MLD materials are used in photocatalysis applications, which are important in environmental remediation and energy conversion technologies.
Electronics and Semiconductors: The combination of MLD with ALD is particularly advantageous in the electronics and semiconductor industries. It enables the precise deposition of thin films with tailored electrical and optical properties, crucial for advanced microelectronics and photonics.
Biomedical Applications: The versatility of MLD and ALD-MLD coatings also finds applications in the biomedical field, such as in drug delivery systems and bioimaging, where biocompatibility and controlled interactions with biological environments are essential.
Industrialization and Future Outlook
As for the industrialization of MLD, it is a relatively newer field compared to ALD. While ALD has been widely industrialized, particularly in the semiconductor industry, MLD is still primarily in the research and development stage, with growing interest in transitioning to industrial applications. The unique capabilities of MLD in creating organic-inorganic hybrid materials are driving research and potential industrial applications, but widespread industrial adoption might still be in progress.
The ALD and MLD webinar served as a beacon of knowledge, shedding light on the latest advancements and future prospects of these technologies. As we step into an era where material science plays a critical role in technological advancements, the insights from this webinar not only educate but also inspire further exploration and innovation in the field. The future of material science, undoubtedly, holds exciting possibilities, with ALD and MLD at its forefront.
Onsemi, a key player in the semiconductor industry, has recognized AIXTRON with a supplier award for its significant contribution to the rapid production ramp-up and productivity increase at onsemi's large silicon carbide (SiC) fabrication facility in South Korea. The facility, one of the world's largest SiC fabs, has benefited from the integration of AIXTRON's new G10-SiC systems. onsemi's successful collaboration with AIXTRON in tool installation and optimization led to substantial improvements in tool operations and maintenance, resulting in greater uptime and higher wafer output. The award from onsemi, a leading manufacturer in the semiconductor sector, highlights AIXTRON's service excellence and the impact of their technology in advancing onsemi's production capabilities.
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ASML has delivered its groundbreaking High-NA EUV lithography scanner, the Twinscan EXE:5000, to Intel Oregon. Marking a significant technological leap, this first-of-its-kind scanner boasts a 0.55 NA lens, enabling 8nm resolution for advanced semiconductor manufacturing. Designed for process technologies beyond 3nm, it promises to enhance chip production efficiency and reduce costs. Intel's early adoption of this state-of-the-art equipment, valued between $300-$400 million, positions them at the forefront of the industry, potentially setting new standards in High-NA manufacturing. This development represents a major milestone in semiconductor technology, signaling a new era of innovation and capability in chip production.
In an era of significant technological and geopolitical changes, ASML, the number one player in the semiconductor industry, stands at a crossroads. The forthcoming retirement of Martin van den Brink and Peter Wennink, who have jointly steered ASML for over a decade, signals the end of a dynamic period. Van den Brink's leadership in technology development propelled ASML to unparalleled heights in the lithography sector, while Wennink’s diplomatic and financial acumen solidified its market dominance. ASML's impact extends beyond technology; it has become a geopolitical force, enhancing the Netherlands and Europe's strategic significance in global politics.
As ASML approaches its 40th anniversary in April 2024, it confronts a changing landscape. The company has weathered various phases – from early struggles to market leadership, marked by innovations like the PAS 5500 and immersion lithography. Under Van den Brink, ASML prioritized technological advancement, often at the expense of other factors like reliability.
The appointment of Christophe Fouquet as the incoming CEO heralds a new era. Fouquet faces the challenge of maintaining ASML's technological edge while adapting to a market nearing the limits of Moore's Law. The shift in focus from chip performance to system-level advancements requires a nuanced approach. Additionally, as technology matures, reliability and predictability become crucial for maintaining ASML's competitive edge.
The transition from a "firefighter" engineering culture to one emphasizing process and reliability won't be easy. Fouquet must balance innovation with operational efficiency, ensuring ASML remains responsive to market and geopolitical dynamics. This requires a departure from the legacy of Van den Brink, focusing instead on a holistic, structured approach to development and engineering.
Fouquet's tenure will be pivotal in shaping ASML's future. His leadership must navigate the complexities of a highly competitive industry, geopolitical pressures, and the evolving technological landscape. The challenge lies in fostering a culture that values reliability and process without stifling the innovative spirit that has been ASML's hallmark. As the company moves into its fifth decade, its ability to adapt and evolve under Fouquet's guidance will determine its continued success in a rapidly changing world.
Advancing the Microchip Revolution: EUV Lithography's Challenges and Future OutlookExtreme Ultraviolet (EUV) lithography represents a significant advancement in semiconductor manufacturing, enabling the production of more compact and efficient integrated circuits, particularly for 7 nm Logic process nodes and below and leading edge DRAM. This technology, developed and marketed primarily by ASML Holding, uses a highly specialized process involving laser-pulsed tin droplet plasma to etch patterns onto substrates at the 13.5 nm wavelength scale. The progression from early prototypes to more efficient models has been remarkable, with modern EUV systems capable of handling 200 wafers per hour, a substantial improvement from initial prototypes.
Looking into the future, EUV lithography is expected to play a critical role in advancing semiconductor technology, especially as the demand for smaller and more powerful chips increases. However, several technological challenges need addressing continiously to fully harness EUV's potential:
1. Optical Component Durability: The EUV process requires highly specialized and sensitive optical components, including mirrors and photomasks. These components are prone to degradation from exposure to high-energy photons and contaminants. Improving their durability and developing efficient cleaning and maintenance processes are crucial.
2. Throughput Efficiency: While significant improvements have been made, further enhancing the throughput of EUV systems is vital. This includes reducing setup times, increasing the speed of the lithography process, and minimizing downtime due to maintenance or component replacement.
3. Pattern Fidelity and Defect Reduction: As circuit patterns become increasingly smaller, maintaining pattern fidelity and reducing defects is challenging. This involves improving the resolution of EUV systems, enhancing photoresist materials to better respond to EUV exposure, and developing more effective methods to mitigate the impact of secondary electrons generated during the lithography process.
EUV Lithography - Balancing Technological Advancements with Energy Challenges
EUV lithography, pivotal in advanced semiconductor manufacturing, faces significant energy consumption challenges. The generation of EUV light, typically via laser-pulsed tin plasma, is inherently energy-intensive. Additionally, maintaining the necessary vacuum environment and cooling systems for these high-precision machines further escalates energy use. As EUV technology becomes more prevalent, especially for producing smaller, more efficient chips, optimizing energy efficiency is critical. Future developments are expected to focus on more efficient light sources, improved system design for energy conservation, and advanced thermal management, aiming to reduce the overall energy footprint of EUV lithography processes.
EUV Lithography's Hydrogen Demand: A Growing Concern in Chip Manufacturing
EUV Lithography, also raises concerns regarding its significant hydrogen consumption. The EUV process relies heavily on hydrogen gas to maintain the cleanliness of the optical elements, particularly for preventing tin deposition on the mirrors. The need for a continuous supply of hydrogen to facilitate this cleaning process contributes to the overall operational costs and resource demands of EUV systems. As EUV technology becomes more widespread in chip manufacturing, addressing the sustainability and efficiency of hydrogen usage will be essential, both from an environmental and economic perspective.
In EUV lithography, managing hydrogen usage presents distinct challenges. The technology requires hydrogen for removing contaminants from critical mirrors, demanding systems capable of handling high volumes while maintaining vacuum integrity. This necessity places a premium on innovative system designs that minimize the footprint and energy consumption associated with hydrogen management, directly impacting the cost and efficiency of semiconductor manufacturing. Safety considerations, given hydrogen's flammability, are paramount. Advanced, fuel-free hydrogen management strategies are employed to ensure safety and environmental compliance. These strategies focus on reducing flammability risks and eliminating the need for additional fuels, thereby minimizing carbon emissions and contributing to sustainable manufacturing practices.
Continued research and development in these areas are essential for the advancement of EUV lithography, ensuring it meets the rapidly evolving demands of the semiconductor industry.
Sources:
Christophe Fouquet’s ASML must reinvent itself – Bits&Chips (bits-chips.nl)
www.imec.be
www.edwards.com
Wikipedia
2023 update to IRDS roadmap reminds key EUV issues.
— Fred Chen (@DrFrederickChen) December 28, 2023
1. EUV dose triples every four nodes => increasing electron blur?
2. EUV cannot replace multiple patterning, even with higher NA.https://t.co/hZzkfKGfyr
South Korea's semiconductor industry is experiencing a remarkable resurgence, marking a turning point in the global tech sector. In November, chip production leaped by 42%, the highest since 2017, while shipments skyrocketed by 80%, the largest increase since 2002. This upturn is a beacon of hope for giants like Samsung Electronics Co. and SK Hynix Inc. The revival extends beyond national borders, suggesting a broader recovery in global tech demand. Amidst challenges, this surge propels South Korea's industrial output and signals a brighter economic forecast for 2023, with emerging technologies fueling further growth.
Source: South Korea Chip Output Jumps in Sign of Returning Global Demand - Bloomberg
The augmented reality (AR) and virtual reality (VR) market is witnessing a resurgence of interest, particularly with the industry's pivot towards the metaverse. Key players like Meta and Apple are at the forefront, with Apple's launch of Vision Pro marking a new phase in spatial computing. This technology is widely viewed as the next evolutionary step in 3D digital interaction.
Despite the enthusiasm, the market reality has lagged behind expectations. According to a recent IDC report, global AR/VR headset shipments have seen a consistent decline, dropping 44.6% year-over-year in the second quarter of 2023. This trend highlights the challenges in boosting demand and adoption rates. A critical area for growth lies in innovative display technologies, crucial for developing AR/VR products.
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The future, however, looks promising. Guillaume Chansin of DSCC anticipates a significant uptick in the AR/VR headset market over the next five years, beginning in 2024. This optimism is fueled by expectations of advanced headsets powered by Qualcomm's Snapdragon XR2 Gen 2, alongside new offerings from Meta, ByteDance, and Apple. Despite a steep price tag, Apple's Vision Pro, equipped with optical inserts from Zeiss, is expected to make a mark in the market.
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The shift towards multiple displays in AR/VR products is another notable trend, with most devices incorporating dual displays. DSCC projects a staggering increase in display shipments for AR/VR, reaching 124 million units by 2028. While VR is set to dominate consumer spaces, see-through AR will be more prevalent in professional settings.
The battle of display technologies is central to this evolution. While VR and pass-through AR mostly rely on TFT LCD and AMOLED, MicroOLED has started to make inroads. MicroOLED, particularly favored by Apple's Vision Pro, offers high resolution and luminance, crucial for an enhanced user experience. Additionally, the emerging MicroLED technology, known for its high brightness and reliability, is poised to revolutionize see-through AR displays.
Despite these advancements, the AR/VR market continues to grapple with challenges in display technology. Innovations in Micro OLED and MicroLED are essential to overcome these hurdles and drive market growth. As the industry continues to evolve, these technologies will play a pivotal role in shaping the future of spatial computing.
ALD offers significant advantages in Micro OLED and MicroLED display manufacturing. Its ability to deposit ultra-thin, uniform layers is crucial for layer uniformity and display quality. ALD is pivotal for creating barrier layers in Micro OLEDs, protecting them from environmental degradation, and for depositing dielectric layers in MicroLEDs, essential for improving efficiency and reducing pixel cross-talk. Additionally, ALD enhances light extraction, encapsulation, and interface engineering, crucial for flexible and transparent displays. While initially costly, ALD's scalability and material diversity make it a key technology for advancing Micro OLED and MicroLED displays, potentially reducing overall manufacturing costs and enhancing display longevity and performance.
Sources:
MicroOLED and MicroLED: The Future of AR/VR Displays – Display Daily
Wikipedia
The research article "Novel Energetic Co-Reactant for Thermal Oxide Atomic Layer Deposition: The Impact of Plasma-Activated Water on Al2O3 Film Growth" presents a groundbreaking study on the use of plasma-activated water (PAW) in the atomic layer deposition (ALD) of Al2O3 thin films. This study offers significant insights into the potential advantages of using PAW over traditional water in thin film deposition processes.
One of the key findings of this research is the enhanced Growth Per Cycle (GPC) when using PAW as a co-reactant. The study found that PAW led to an increase in GPC of up to 16.4% compared to deionized (DI) water. This enhancement is attributed to the reactive oxygen species present in PAW, such as H2O2 and O3, which are believed to activate substrate sites more effectively, thereby improving both the GPC and the overall quality of the films.
The study also delves into the chemical reactivity of PAW, noting significant changes in its physicochemical properties upon activation. These changes include a decrease in pH, indicating increased acidity, as well as increases in oxidation-reduction potential (ORP), conductivity, and total dissolved solids (TDS). Additionally, the concentration of reactive species like H2O2, NO2−, NO3−, HNO2, and O3 was found to be higher in PAW.
The improved film quality achieved with PAW is another highlight of the study. Films grown using PAW, especially with PAW at a pH of 3.1, displayed a near-stoichiometric O/Al ratio, reduced carbon content, and an expanded bandgap. These characteristics are indicative of a superior film quality compared to those grown using DI water.
Furthermore, the study suggests that a comprehensive understanding of PAW's role in ALD necessitates further investigations. These investigations should explore different temperatures, metal precursors, and PAWs generated by alternate non-thermal plasmas.
The term “PAW-ALD” has been proposed to describe this enhanced variant of the ALD process that incorporates plasma-activated water. This new descriptor highlights the unique approach and potential benefits of using PAW in thin film deposition processes.
Finally, the potential applications of this research are significant. The use of PAW in ALD could mirror the gains observed in plasma-enhanced atomic layer deposition (PEALD) processes that use oxygen plasma, indicating its potential industrial relevance.
Source:
Join us for an enlightening webinar on Atomic Layer Deposition (ALD) and Molecular Layer Deposition (MLD), showcasing their combined prowess in the creation of novel inorganic-organic materials. This event is an excellent opportunity for those interested in advanced material sciences and engineering.
Date and Time: Tuesday, 16th of January, 2024 at 14:00 CET
Duration: 45 minutes
This session will provide a comprehensive overview of ALD and MLD, contrasting them with traditional solution-based methods. We will delve into how these techniques enable the formation of high-quality thin films, crucial for practical applications in areas such as optical data storage and wearable energy harvesting devices.
Key Highlights:
- An introduction to ALD-MLD techniques.
- Exploration of state-of-the-art inorganic-organic thin films, including photoactive ferrimagnetic and thermoelectric hybrid thin films.
- Discussion on technical challenges with organic precursors and solutions for industrial-scale application.
Guest Speaker: Topias Jussila, Doctoral Researcher, Aalto University
Topias Jussila is a promising PhD student at the Department of Chemistry and Materials Science, Aalto University, Finland. With a background in Chemistry and Functional Materials, his current research focuses on the development of novel thin film materials using ALD and MLD, particularly in the realm of iron-based materials.
Don't miss this opportunity to gain insights into the cutting-edge world of thin film materials and their applications. Register today to secure your spot!
For more information and registration, visit Atomic layer deposition (ALD) and molecular layer deposition (MLD) together present an elegant technique for the deposition of novel inorganic-organic materials. (picosun.com)
