Friday, January 18, 2019

ULVAC Inc. and Oxford Instruments Plasma Technology collaborate to bring Atomic Scale Processing solutions to the Japanese Power and RF markets

[Oxford Instruments, LINK] Leading semiconductor equipment solution providers, Oxford Instruments Plasma Technology (a trading name of Oxford Instruments Nanotechnology Tools Limited, Tubney, Oxford, UK) and ULVAC Inc., (Chigasaki, Kanagawa, Japan) are delighted to announce a key collaboration which will bring leading edge deposition and etch technology solutions to GaN and SiC based Wide Band Gap production customers in Japan.

“Oxford Instruments Plasma Technology is excited to be collaborating with ULVAC in order to bring its proven process solutions to the Japanese power and RF markets”, commented Mike Gansser-Potts, Managing Director, Oxford Instruments Plasma Technology. “This relationship, which will begin with ULVAC as our channel partner in Japan, will allow local production customers access to Oxford Instruments’ suite of Atomic Scale Processing solutions”

“This is indeed a very significant collaboration”, confirmed Tetsuya Shimada, General Manager for Advanced Electronics Equipment Division of ULVAC Inc., “Our new collaborator, Oxford Instruments Plasma Technology, has critical process technology and know-how which complements our own capabilities. Combined with our customer support infrastructure this will allow us to provide a complete solution to our Japanese customers.”

Oxford Instruments Plasma Technology’s Atomic Layer Deposition (ALD) and Atomic Layer Etch (ALE) are critical process steps for GaN and SiC based devices to enable functionality and reliable device manufacturing. With the critical know-how and expertise gained over the last ten years in Wide Band Gap applications, Oxford Instruments Plasma Technology is perfectly placed to serve the technology leading Japanese production customers in these markets.

Wednesday, January 16, 2019

Come to Berlin for the EFDS ALD for Industry - 3rd Workshop and Tutorial, March 19-20, 2019

Including Industrial Exhibition and Practical ALD Show

A topical workshop with focus on industrialization and commercialization of ALD for current and emerging market

Atomic Layer Deposition (ALD) is used to deposit ultraconformal thin films with sub-nm film thickness control. The method is unique in the sense that it employs sequential self-limiting surface reactions for growth in the monolayer thickness regime. Today, ALD is a key technology in leading semiconductor technology and the field of application in other leading-edge industries is increasing rapidly. According to market estimates the equipment market alone is currently at an annual revenue of US$ 1.5-1.7 billion (2017) and it is expected to double in the next 4-5 years.

In a European context ALD was invented independently twice in Europe (Russia & Finland) and since the last 15 years Germany has grown to become one of the strongest European markets for ALD in R&D, chemicals, equipment and end users.

The Event will focus on the current markets for ALD and addresses the applications in semiconductor industry, MEMS & Sensors, Battery Technology, Medical, Display, Lightning, Barriers and Photovoltaics.

Tuesday, January 15, 2019

CALL FOR PAPERS - 4th Area Selective Deposition (ASD) Workshop will be held on April 4th – 5th, 2019 in IMEC, Leuven (Belgium)

 Visit our website:

ASM and IMEC are proud to announce that the 4th Area Selective Deposition (ASD) Workshop will be held on April 4th – 5th, 2019 in IMEC, Leuven (Belgium).

This workshop will bring together leading experts from both academia and industry to share their vision and results on ASD. Based on a series of successful workshops at the: North Carolina State University in 2018, Eindhoven University of Technology in 2017 and IMEC in 2016, the two-days program will include invited and contributed speakers, a poster session and a reception on the evening of April 4th.

The workshop will cover a wide range of topics, including the following:

Area selective epitaxy and area selective chemical vapor deposition: processes and mechanisms, defects control

Intrinsic selectivity of ALD processes: nucleation and interface studies, chemical selectivity in surface reactions, competitive adsorption, precursors design, modeling of surface reactions

Methods for area selective activation / deactivation: use of inhibitors (self-assembled monolayers, polymers), plasma-/beam-induced activation

Processes and mechanisms for area selective atomic layer deposition: deposition of metals or dielectrics, thermal/plasma enhanced ALD, 3D or patterned substrates, substrates preparation, sequential deposition/etching,

Metrology and defects control:
surface characterization techniques, selective etching of defects

Applications of area selective deposition:
semiconductor industry (integration needs of device makers, solutions proposed by the equipment makers), catalysis, energy generation and storage, etc.

On behalf of the organizing committee, it will be our pleasure to welcome you in Leuven.

Andrea Illiberi

Program chair of the 4th ASD workshop

Thursday, January 10, 2019

Workshop, Tutorial & Practical Show „ALD for Industry“, 19. – 20. März 2019, Berlin

ALD – eine vielversprechende Technologie

Die Atomlagenabscheidung (ALD) verspricht mit ihrem besonderen Ansatz, Beschichtungen Lage für Lage geordnet abzuscheiden, zahlreiche Vorteile und Möglichkeiten. 2019 treffen wir uns nunmehr zum dritten Mal mit zunehmendem Teilnehmerkreis, um das Potential der Technologie und die aktuellen Fortschritte aufzuzeigen und zu diskutieren. In diesem Jahr stehen neben interessanten Vorträgen vor allem Praxistipps im Vordergrund. In der „Practical ALD Show“ geben Experten Tipps zur Durchführung und Prozessoptimierung. Einzelne Ausstellungs-Restplätze für Sponsoren sind noch buchbar.

Das Jahrestreffen der Plasma- und Vakuumexperten – V2019 + ALD


Das Jahrestreffen der Plasma- und Vakuumexperten – V2019

+ ALD (Vorlesung, Poster, Workshop)

Die Vorbereitungen laufen auf Hochtouren. Die V2019 wird in diesem Jahr wieder zahlreiche Experten, Anbieter, Nachwuchskräfte und Interessierte zur Vakuum- und Plasmaoberflächentechnik zusammenführen. Diesmal findet das Event in der Saalebene des Internationalen Congress Center Dresden (ICD) statt – welches gleich an die historischen, barocken Bauwerke der Altstadt anschließt. Die diesjährige V verbindet Bewährtes und Neues. Da sind neben Vorträgen und Fachgesprächen die zahlreichen Industrieaussteller aber auch neue Workshop-Themen, ein Fachkräfte-Scouting und Firmenbesichtigungen zu erleben. Seien Sie beim Branchentreff dabei. Zahlreiche Aussteller haben bereits Ihren Stand gebucht. 

Sichern Sie sich rechtzeitig Ihre repräsentative Ausstellungsfläche.

Call for Abstracts - AVS ALD 2019 and ALE 2019!

Call for Abstracts
Deadline February 15, 2019

The AVS 19th International Conference on Atomic Layer Deposition (ALD 2019) featuring the 6th International Atomic Layer Etching Workshop (ALE 2019) will be a three-day meeting dedicated to the science and technology of atomic layer controlled deposition of thin films and now topics related to atomic layer etching. The conference will take place Sunday, July 21-Wednesday, July 24, 2019, at the Hyatt Regency Bellevue in Bellevue, Washington (East Seattle).

As in past conferences, the meeting will be preceded (Sunday, July 21) by one day of tutorials and a welcome reception. Sessions will take place (Monday-Wednesday, July 22-24) along with an industry tradeshow. All presentations will be audio-recorded and provided to attendees following the conference (posters will be included as PDFs). Anticipated attendance is 800+.

Key Deadlines:
Abstract Submission Deadline: February 15, 2019
Author Acceptance Notifications: April 8, 2019
Early Registration Deadline: June 1, 2019
Hotel Reservation Deadline: June 27, 2019
JVST Special Issue Deadline: November 1, 2019

ALD Program Chairs

Program Chair:
Sumit Agarwal
(Colorado School of Mines, USA)

Program Co-Chair:
Dennis Hausmann
(Lam Research, USA)
ALE Program Chairs

Program Chair:
Craig Huffman
(Micron, USA)

Program Co-Chair:
Gottlieb Oehrlein
(University of Maryland, USA)