Friday, March 22, 2024
Surfs are going to be up at the PRiME Symposium G01 on ALD & ALE Applications 20, in Honolulu | Oct. 6-12, 2024
Tuesday, March 19, 2024
Laser Slicing Technique Revolutionizes GaN Substrate Recycling, Paving the Way for Cost-Effective Vertical Power MOSFETs
A study led by Takashi Ishida and colleagues explored a recycling process for gallium nitride (GaN) substrates using a laser slicing technique, aiming to reduce the cost of GaN vertical power MOSFETs. GaN is noted for its potential in high-power applications due to its superior electrical properties compared to silicon. The cost of GaN devices, while expected to be lower than silicon carbide (SiC) devices, is significantly impacted by the expensive GaN substrates. The proposed recycling process involves the use of laser slicing to separate used GaN substrates into thin device chips and a remaining substrate portion, which can then be smoothed, polished, and reused for further device fabrication.
The research demonstrated that the electrical properties of devices fabricated on recycled GaN substrates, specifically lateral MOSFETs and vertical PN diodes, showed no degradation compared to those on new substrates. This indicates that the recycling process does not adversely affect the substrate's quality or the performance of subsequent devices. The study's findings suggest that this recycling method could be a viable strategy to lower the production costs of GaN-based power devices, potentially facilitating their broader adoption in high-power applications.
Tokyo Electron ALD of AlN Thin Films Report Unprecedented Uniformity on Large Batch 200 mm Tool
In the rapidly evolving world of semiconductor technology, achieving high uniformity in thin films is important for enhancing production yield and device performance. In a study led by Partha Mukhopadhyay and his team at Tokzo Electron has made significant strides in this domain, using ALD of aluminum nitride (AlN) thin films on a 200 mm large batch furnace platform. AlN is particularly relevant for gallium nitride (GaN)-based power industry, where AlN's wide bandgap, high dielectric constant, and superior thermal conductivity make it an ideal choice for various applications, including UV LEDs, transistors, and micro-electromechanical systems.
The study's focus lies in its ability to maintain extraordinary uniformity across large batches of 200 mm wafers, achieving a thickness variation of less than 0.5 Å. This level of uniformity was obtained by optimizing the ALD process in a reactor capable of handling over 100 wafers, marking a significant achievement in high-volume production environments. The research examined the effects of deposition temperatures, film thicknesses, and different substrate types, including Si, quartz, and GaN/Si(111), on the material and optical properties of the AlN films.
One of the key findings was the identification of an optimal narrow temperature window between 300°C and 350°C for the deposition process, with 350°C being the sweet spot. The study also delved into the nuanced challenges of nucleation on different substrates, revealing that substrate-inhibited growth and a non-linear deposition rate are pivotal factors to consider. This understanding is crucial for maintaining uniformity in extremely thin films, which are sensitive to the underlying substrate's crystal orientation.
From a compositional standpoint, the development showcased the high purity of the AlN films, with negligible carbon and oxygen contamination. This purity is essential for the semiconductor industry, particularly for applications where chemical stability is critical. The study's rigorous material analysis, which included techniques like XPS and TEM, provided in-depth insights into the AlN films' structural and compositional integrity.
Optically, the AlN films demonstrated a bandgap of 5.8 eV, a key attribute for their use in optoelectronic applications. The research also highlighted the refractive index's dependence on film thickness and deposition temperature, offering valuable data for the design and optimization of optical devices.
In summary, this study represents a significant progress in ALD of AlN thin films, combining high throughput with exceptional film uniformity and quality.
Thursday, March 7, 2024
Aalto University in Finland Wins Major Grant for Eco-Friendly Semiconductor Technology
Aalto University, in close collaboration with key industry players including Applied Materials in Finland (Picosun), PiBond, and Volatec, has been awarded a significant grant by Business Finland for their groundbreaking project titled “New chemistries for resource-efficient semiconductor manufacturing”. This initiative is a part of the larger "Chip Zero" Ecosystem, spearheaded by Picosun, aiming to revolutionize the semiconductor industry by developing chips that boast zero lifetime emissions—a first in Finland's tech landscape.
Led by Professors Maarit Karppinen and Antti Karttunen from Aalto's Department of Chemistry and Materials Science, the project seeks to address the pressing environmental concerns associated with semiconductor manufacturing. With the industry's carbon footprint and resource consumption at an all-time high, this co-innovation venture promises to pave the way for more sustainable production methods.
Dr. Ramin Ghiyasi working in the CHEMI-SEMI project holding a silicon wafer after atomic layer deposition, Department of Chemistry and Material Science
The project's goals are ambitious yet crucial. By innovating new chemical processes and materials, the team aims to minimize the environmental impact of semiconductor fabrication. This includes the development of novel, eco-friendly precursors and solvents, enhancing material purification, and advancing recycling practices, as highlighted by Dr. Marja Tiitta from Volatec.
Dr. Thomas Gädda of PiBond emphasizes the importance of collaborative efforts in achieving these sustainability targets, underscoring the project's reliance on a synergy of expertise from academia and industry. This collaborative framework is expected to yield advancements in chemical usage, process optimization, and energy efficiency in semiconductor manufacturing.
With its comprehensive approach, combining experimental research with computational modeling, the project aspires not only to innovate within the confines of semiconductor technology but also to set a new standard for environmentally conscious manufacturing practices in the industry.
Source: Significant Grant for Greener Semiconductor Technology from Business Finland | Aalto University
Wednesday, February 28, 2024
ASM International: Spearheading Semiconductor Innovation in ALD, Epitaxy, and CVD Markets
“2023 was another successful year for ASM. Sales increased by 13% at constant currencies, despite softening market conditions, and marking the seventh consecutive year of double-digit growth.” said Benjamin Loh, CEO of ASM. “Revenue in Q4 2023 amounted to €633 million, in line with our guidance of €600-640 million and down compared to the level in Q4 2022. Revenue in the quarter was supported by strong sales in the power/analog/ wafer segment. Bookings at €678 million were slightly better than our expectation and were driven by GAA pilot- line orders and continued strength in China demand.
ASM's Leadership in the Growing ALD Market
According to ASM, the single wafer Atomic Layer Deposition (ALD) market is experiencing significant growth, with projections indicating an increase from $2.6 billion in 2022 to a range of $4.2 billion to $5.0 billion by 2027. This growth, characterized by a Compound Annual Growth Rate (CAGR) of 10-14% from 2022 to 2027, underscores the expanding role of ALD technology in semiconductor manufacturing. ASM International, a key player in the semiconductor industry, holds a dominant position in this market, commanding a share of over 55% throughout the forecast period.
Please note that this market assessment, most probably originally from TechInsights (prev. VLSI Research) does not include Large Batch furnace ALD, which historically have been about 30% of the total 300 mm ALD equipment market. The leaders in this segment are Tokyo Electron followed by Kokusai and ASM chose not to compete with its A412 ALD product line.
Driving Forces Behind ALD Market Expansion
The expansion of the ALD market is propelled by a series of technological advancements and increasing demands within the semiconductor sector. Key factors contributing to this growth include the industry's shift towards Gate-All-Around (GAA) technology, the necessity for advanced high-k gate dielectrics, and the precision required for threshold voltage tuning. Additionally, the development of sacrificial layers and the use of high aspect ratio Through-Silicon Vias (TSVs) are critical in advancing semiconductor manufacturing techniques. The application of metals and the adoption of selective ALD processes further accentuate the importance of ALD technology in modern semiconductor fabrication.
ASM's Strategic Positioning and Market Opportunities
ASM is well-positioned to capitalize on the opportunities presented by the burgeoning ALD market. The company's strategic emphasis on innovation, coupled with its comprehensive product portfolio, positions ASM as a frontrunner in meeting the evolving needs of the logic/foundry and memory segments of the semiconductor industry. The transition to advanced manufacturing technologies, such as GAA and high-k metal gate applications, presents significant growth avenues for ALD, with ASM at the forefront of this technological evolution.
To be more specific, the transition to GAA technology and the expansion in FinFET applications are set to significantly increase ASM's served available market by approximately US$400 million for every 100,000 wafer starts per month (WSPM). According to ASM, the equipment orders started to come in in the 2nd half of 2023. We can assume that this are orders from Samsung, TSMC and Intel. It is however about peculiar since Samsung had 3 nm GAA going already with yield in August 2023 and ASM is describing it as GAA pilot lines. Anyhow, come 2028 when all leading foundries including Rapidus in Japan are up and running GAAFETs, this additional market will be + USD 1.5 B as compared to if it would have been "only" FinFET technology - according to my back of the envelope calculations. For a company like ASM, with just below USD 3 B (2.6 B EUR) annual Revenue 2023 this is a huge thing. If this is not enough to go woah - add to that the GAAFET market is an upwards moving target and will continue to grow and looking ahead stacking of NMOS/PMOS will drive further demand for this type of ALD and Epi processes.
Expansion into the Epitaxy and CVD Markets
The Silicon Epitaxy (Si epi) market is also on a growth trajectory, with forecasts suggesting it will reach between $2.3 billion and $2.9 billion by 2027. ASM aims for a market share target of over 30%, focusing on both leading-edge and non-leading-edge segments. The leading-edge growth is driven by transitions to GAA technology and advancements in high-performance DRAM, while the non-leading-edge growth is buoyed by wafer power analog and strong momentum from ASM's Intrepid ESA. The epitaxy market is expected to see a Compound Annual Growth Rate (CAGR) of 3-8% from 2022 to 2027, with the leading-edge segment outpacing the overall market with a CAGR of 10-15%.
Regarding the SiC market, the investor presentation highlighted significant growth in power/analog/wafer revenue, almost doubling, primarily driven by robust demand in China. This growth was positively impacted by the consolidation of LPE (SiC Epitaxy), with sales comfortably exceeding the target of more than €130 million in 2023. This indicates ASM's strong performance in the SiC market and its successful integration and expansion in SiC epitaxy, aligning with the broader industry trend towards more advanced and efficient semiconductor materials.
Chemical Vapor Deposition (CVD) technology is another area of focus for ASM, particularly in the context of transitioning to new materials like Molybdenum, which is replacing traditional materials such as CVD Tungsten and PVD Copper in interconnect applications. This shift is indicative of the evolving needs within the semiconductor manufacturing process and highlights ASM's adaptability to changing market dynamics.
In summary, ASM's strategic initiatives in ALD, Epitaxy, and CVD technologies underscore the company's commitment to innovation and leadership within the semiconductor equipment market. Through a combination of market foresight, technological prowess, and strategic investments, ASM is well-positioned to capitalize on the growth opportunities presented by the evolving semiconductor landscape.
Tuesday, February 27, 2024
Applied Materials Unveils Cutting-Edge Patterning Technologies for Next-Gen Semiconductor Device Manufacturing
Applied Materials is leading the charge into the angstrom era of chipmaking, unveiling a suite of innovative solutions at the SPIE Advanced Lithography + Patterning conference. The company's focus is on overcoming the challenges posed by extreme ultraviolet (EUV) and high-NA EUV lithography, crucial for the production of chips at 2nm process nodes and below. Their approach integrates new materials engineering, metrology techniques, and pattern-shaping technology to enhance chip performance and yield.
To help overcome patterning challenges for leading-edge chips, Applied Materials offers a portfolio of technologies designed to complement the latest advances in lithography. The company’s newest innovations include the Producer® XP Pioneer® CVD patterning film, the Sym3® Y Magnum™ etch system, the Centura® Sculpta® pattern-shaping system and Aselta contour technology for design-based metrology.
Central to Applied Materials' advancements is the Sculpta® pattern-shaping technology, first introduced at the previous year's conference. Sculpta has seen growing adoption among top logic chipmakers for its ability to refine EUV patterning, notably reducing double patterning steps and mitigating defects such as bridge defects. This technology not only lowers patterning costs but also improves chip yields, showcasing its increasing importance in the semiconductor manufacturing landscape.
In response to the issue of EUV line edge roughness, Applied Materials has launched the Sym3® Y Magnum™ etch system. This innovative system employs a combination of deposition and etch processes within a single chamber to smooth out rough edges before etching, thereby enhancing yield and chip performance.
Additionally, the company introduced the Producer® XP Pioneer® CVD patterning film, designed for high-fidelity pattern transfer with enhanced resistance to etch chemistries. This film is especially significant for advanced process nodes, offering improved sidewall feature uniformity and co-optimization with both Sculpta and the Sym3 Y Magnum system for superior patterning capabilities.
To address the critical issue of feature alignment across chip layers, Applied Materials has acquired Aselta Nanographics, integrating its design-based metrology with Applied's leading eBeam systems. This integration enables a comprehensive metrology solution that significantly enhances feature placement accuracy, crucial for optimizing chip performance and yield.
Applied Materials' expansion of its patterning solutions portfolio underscores its commitment to advancing semiconductor technology. By addressing key challenges in EUV lithography and introducing groundbreaking technologies, the company is setting new standards for the industry, driving forward the capabilities of angstrom era chipmaking.
DOE Invests $4M in Argonne's ALD Tech to Develop Energy-Efficient Semiconductor Devices
Monday, February 26, 2024
PRiME 2024: A Global Convergence on Atomic Layer Processing Set for Honolulu This October
The PRiME Joint International Meeting, organized by the Electrochemical Society and sister societies from Japan and Korea, will take place from October 6-11, 2024, in Honolulu, Hawaii. Anticipating over 4000 participants, the conference will focus on solid-state science, technology, and electrochemistry. Symposium G01 invites submissions on Atomic Layer Deposition and Etching, covering topics from semiconductor applications to energy storage. The deadline for abstract submission is April 12, 2024. Last year's event saw 78 presentations, indicating a strong interest in the field. For visa, travel information, and participation letters, contact ECS representatives.
Symposium organizers:
F. Roozeboom, (lead), University of Twente; e-mail: f.roozeboom@utwente.nl,
S. De Gendt, IMEC & Catholic University Leuven,
J. Dendooven, Ghent University,
J. W. Elam, Argonne National Laboratory,
O. van der Straten, IBM Research,
A. Illiberi, ASM Europe,
G. Sundaram, Veeco,
R. Chen, Huazhong University of Science and Technology,
O. Leonte, Berkeley Polymer Technology,
T. Lill, Clarycon Nanotechnology Research,
M. Young, University of Missouri,
A. Kozen, University of Vermont.
Saturday, February 17, 2024
After decline of -13%, TECHCET reports consecutive YoY double-digit growth
SIA Feb. 22 for a webinar on the 2023 semiconductor market and 2024 outlook
Thursday, February 15, 2024
Webinar - ALD of nitrides - enabling metastable nitrides by plasma ALD
Speaker: Pamburayi Mpofu, Linköping University, Pedersen Group
"I will describe the general problems for doing ALD of nitrides and why ALD seems to be an enabler for metastable nitrides will be described. With focus on my research on AlTiN I will show how I use ALD in developing an understanding of the surface chemistry during the deposition processes. Using in-situ techniques, to study the surface chemistry while navigating the precursor chemistry to generate experimental data that we compare with modeling results to provide an atomic scale perspective of the surface chemistry."
AMEC's Revenue Grows with Advanced Etch Technology Fueling China's Semiconductor Surge
Scalable Electronic-Grade Van der Waals Tellurium Thin Films
Process Controlled Ruthenium on 2D Engineered V-MXene via Atomic Layer Deposition for Human Healthcare Monitoring
A schematic of atomic layer deposition process and step coverage of ALD-Ru film. Credit: Advanced Science (2023). DOI: 10.1002/advs.202206355
Wednesday, February 7, 2024
Tyler J. Myers Launches The ALDepartment YouTube Channel to Explore and Expand the World of Atomic Layer Deposition
Tyler J. Myers has launched a new initiative called The ALDepartment, following his departure from the ALD Stories podcast. This project aims to delve deeper into the field of Atomic Layer Deposition (ALD) by creating a platform that encompasses a wide array of ALD-related topics. The ALDepartment, hosted on YouTube, is set to feature educational content, interviews with influential figures in the ALD community, commentary on recent developments within the field, and even some entertainment-focused videos.
Myers' first video on the channel serves as an introduction, outlining his motivations for starting this venture and what viewers can expect from future content.
Tuesday, February 6, 2024
Powering the Future: The Rise of Compound Semiconductor Substrates and Epiwafers
Yole Group reports that the compound semiconductor substrate market is on the brink of a significant transformation, poised to reach a staggering US$3.3 billion by 2029, with an impressive compound annual growth rate of 17% from 2023 to 2029. This growth is underpinned by the relentless innovation and strategic foresight of leading players like Wolfspeed and Coherent, who are continuously refining their product portfolios and expanding their market footprints.
Atomic Layer Deposition (ALD) and Atomic Layer Etching (ALE) play specific roles in the compound semiconductor industry. ALD is used to apply ultra-thin layers crucial for semiconductor devices, especially in insulating layers and gate dielectrics in transistors. ALE, with its precise etching capability, is key for crafting fine details in devices, often used in the patterning of nanoscale structures in LEDs and high-frequency transistors. These technologies support the development of advanced, reliable applications in power electronics and photonics.
At the heart of this industry evolution are the advancements in compound semiconductor technologies, spanning materials such as Silicon Carbide (SiC), Gallium Nitride (GaN), and Indium Phosphide (InP). These materials are catalyzing a revolution across various sectors, with SiC leading the charge in the automotive industry, particularly within the burgeoning 800V electric vehicle segment. GaN, on the other hand, is making inroads into consumer electronics and automotive applications, promising to redefine power electronics with its superior efficiency.
The impact of compound semiconductors extends beyond power electronics into the realm of photonics, where InP and GaAs are setting new benchmarks. InP, for instance, is witnessing a resurgence, driven by its critical role in AI applications, while GaAs photonics continues to grow, albeit at a steadier pace.
Yole Group, a market research and strategy consulting firm, in its latest "Status of Compound Semiconductors Industry 2024" report, provides an exhaustive analysis of these trends. The report delves into each substrate's market dynamics and technological advancements, offering a comprehensive overview of the ecosystem.
LINK: Compound semiconductors industry: an unprecedented promise (yolegroup.com)
As the industry stands at the precipice of transitioning to larger diameter substrates, the demand for high-data-rate lasers in AI is pushing for a shift to 6” InP substrates. Concurrently, GaAs is exploring the potential of 8” manufacturing for MicroLEDs, despite the challenges it faces against OLED technology.
In this dynamic landscape, companies like Wolfspeed and Coherent are not just participants but are leading the charge towards a more efficient, technologically advanced future. Their efforts in expanding material capacity and forging strategic alliances are testament to the industry's readiness to embrace the next wave of semiconductor innovation.
Saturday, January 27, 2024
AlixLabs Celebrates Gold Sponsorship at ALD/ALE 2024 in Helsinki: Honoring Dr. Tuomo Suntola and Embracing Advances in Atomic Layer Etching
We are proud to be Gold Sponsors of ALD/ALE 2024 in Helsinki, Finland . We look forward to contribute to the conference program and meet you in the exhibition. We especially look forward to join the celebration 50 Years of ALD and honor the inventor and Millennium Prize Winner 2018 Dr. Tuomo Suntola.