Tuesday, July 7, 2015

Integration of Sub-10 nm ALD Gate Oxide on MoS2 with Ultra Low Leakage and Enhanced Mobility

Here is a nice Open Source report (Scientific Reports 5, Article number: 11921 (2015) doi:10.1038/srep11921) on integration of Sub-10 nm Gate Oxide on MoS2 with Ultra Low Leakage and Enhanced Mobility. 

Atomic layer deposition of Al2O3 on MoS2 flakes was performed according to the paper, some of the MoS2 flakes were loaded into the Picosun R200 ALD chamber for direct Al2O3 deposition. During the deposition, TMA and H2O served as the aluminum and oxygen precursors, respectively, and different growth temperatures and pulse time were adopted to observe their impacts. For some of the flakes, the remote O2 plasma pretreatments were carried out in the same chamber before Al2O3 was deposited.

(a) Cross-sectional schematic of the top-gated devices together with the electrical connections. (b) Ids – Vtg curves with Vds ranging from 50 mV to 500 mV. The inset shows the Ids – Vds curves with the top gate voltages of 0 V and 2 V. (c) Top gate leakage current of the device. Optical image of the top gate device is attached as the inset of (c). Top gate dielectric of this device is 60 cycles Al2O3 deposited with 60 s remote oxygen plasma pretreatment. All these measurements were performed at room temperature with the back gate grounded (Scientific Reports 5, Article number: 11921 (2015) doi:10.1038/srep11921) .

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