Friday, July 31, 2015

High-pressure anneal for indium gallium arsenide transistors with ALD HKMG

As reported by Semiconductor Today : Researchers in the USA and Korea have developed a hydrogen high pressure annealing (HPA) process for an ALD aluminium oxide/hafnium dioxide (Al2O3/HfO2) gate stacks on indium gallium arsenide (InGaAs) quantum wells [Tae-Woo Kim et al, IEEE Electron Device Letters, vol36, p672, 2015]. The aim of the team, from SEMATECH Inc in the USA, the Korea Advanced Nano Fab Center in South Korea, Poongsan Inc in the USA, and Kyungpook National University in South Korea, was to reduce interface and border traps that adversely affect transistor performance and threshold voltage reliability.

(a) Schematic cross-section for InGaAs MOSCAPs and MOSFETs with HPA, (b) energy-band diagram with interfacial and border traps, and (c) cross-sectional TEM images for ALD Al2O3/HfO2 gate stack before and after HPA.

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