Sunday, July 12, 2015

TEL Begins Accepting Orders for Triase+™ EX-II™ TiN Plus, a Single-Wafer Metallization System

As announced today - Tokyo Electron Limited (TEL) announced today that it began accepting orders for the Triase+TM EX-IITM TiN* Plus, a successor to the Triase+ EX-II TiN single-wafer metallization system, in July, 2015.

The existing Triase+ EX-II TiN is a high-speed single-wafer ASFD (Advanced Sequential Flow Deposition) system with an optimized reactor chamber and unique gas injection mechanism. Since its introduction in January 2013, the Triase+ EX-II TiN has established itself as a standard for single-wafer ASFD TiN metallization systems, and has been adopted by customers throughout the world for manufacturing memory and logic devices.

As the latest memory and logic designs require increasingly smaller feature sizes and higher aspect ratios, manufacturers today need the key technology to deposit uniform TiN thin films on complex surface structures in order to improve device yield. The Triase+ EX-II TiN Plus features new reactor chamber and gas injection mechanism designs, significantly improving within-wafer uniformity, step coverage, and productivity. Customers can also upgrade their existing Triase+ EX-II TiN systems to Triase+ EX-II TiN Plus, which helps them save investment costs.

"The Triase+ EX-II TiN Plus is the latest system that fully incorporates the technical expertise we have gained with the Triase+ EX-II TiN, and represents a major improvement over its predecessor," said Takeshi Okubo, Executive Officer and General Manager, SDBU at TEL. "The technology we adopted for this system will also be used in the upcoming Triase+ EX-II series of tools, extending the ASFD processing capability to materials other than TiN. We also challenge ourselves to develop even more sophisticated technologies and continue to provide high value-added systems for a wide range of thin film applications."

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