The Nucleation Dependent Growth Layer: A Structure Element in Electrocrystallization - The 10th William Blum Lecture 1969

I was scaning the internet on Kolschuetter and "Atomic Layer" hoping finding proof on the pre-1950´s discovery of ALD (sorry) and came across this rather interesing reviw paper for a lecture in 1969 - Bunching and debunching effects very fascinating indeed and just look how the images and graphs, which are so much more beautiful than today!

"This paper is a re-publication of the 10th William Blum Lecture, presented at the 56th AES Annual Convention in Detroit, Michigan, on June 16, 1969. Prof. Dr. Hellmuth Fischer discussed his work on the theory of plating and how the electrochemistry and use of additives in the bath led to different types of deposit structure"

 

Prof. Dr. Hellmuth Fischer

Recipient of the 1968 William Blum AES Scientific Achievement Award

Originally published as Plating, 56 (11), 1229-1233 (1968).

Editor’s Note: This paper is a re-publication of the 10^th William Blum Lecture, presented at the 56^th AES Annual Convention in Detroit, Michigan, on June 16, 1969.  A printable PDF version is available by clicking HERE.

ABSTRACT

For the first time, it has been shown by Eichkorn that layer growth (not of growth-spirals) depends on continued nucleation of monoatomic layers building up growth layers.  This has been done by determination of nucleation-overvoltage η and thickness of growth layers.  During formation of growth layers, overvoltage must surpass η and time dependent adsorption of foreign substances must control the motion rate of monoatomic layers.  Growth layers can develop to whiskers, columnar crystals, fiber textures, twinned or randomly dispersed structures.

Subsequent nucleation, outgrowth and "bunching" of atomic layers forming a macrostep.