Some advancement in keeping low cost manufacturing of 20 nm DRAM will be presented by Samsung at IEDM 2015. Key elements are:
- avoiding EUV lithography
- honeycomb structure (see figure below)
- air-spacer technology
According to Solid State Technology an air-gap spacer arrangement achieves a 34% reduction in bitline capacitance for faster operation.
20nm DRAM: A New Beginning of Another Revolution (Invited), J. Park, Y.S. Hwang, S.-W. Kim, S.Y. Han, J.S. Park, J. Kim, J. W Seo, B.S. Kim, S.H. Shin, C.H. Cho, S.W. Nam, H.S. Hong, K.P. Lee, G.Y. Jin, and E.S. Jung, Samsung Electronics Co.
For the first time, 20nm DRAM has been developed and fabricated successfully without EUV lithography using the honeycomb structure and the air-spacer technology. These low-cost and reliable schemes are promising key technologies for 20nm technology node and beyond.
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