Samsung to present low cost manufacturing of 20 nm DRAM and beyond at IEDM2015

Some advancement in keeping low cost manufacturing of 20 nm DRAM will be presented by Samsung at IEDM 2015. Key elements are:

• avoiding EUV lithography
• honeycomb structure (see figure below)
• air-spacer technology

According to Solid State Technology an air-gap spacer arrangement achieves a 34% reduction in bitline capacitance for faster operation.

20nm DRAM: A New Beginning of Another Revolution (Invited), J. Park, Y.S. Hwang, S.-W. Kim, S.Y. Han, J.S. Park, J. Kim, J. W Seo, B.S. Kim, S.H. Shin, C.H. Cho, S.W. Nam, H.S. Hong, K.P. Lee, G.Y. Jin, and E.S. Jung, Samsung Electronics Co.

For the first time, 20nm DRAM has been developed and fabricated successfully without EUV lithography using the honeycomb structure and the air-spacer technology. These low-cost and reliable schemes are promising key technologies for 20nm technology node and beyond.