Tuesday, April 12, 2016

Room Temperature ALD of ZrO2 by Plasma Excited Water Vapor to be presented at ECS 229

Here is a cool upcoming presentation! Room temperature ALD of ZrO2 by using plasma excited water vapor (!) is to be presented at ECS Meeting in San Diego May 30 by K. Kanomata from Yamagata University, CREST, Japan. I can´t remember seeing Plasma activated water being used for ALD before - genius! This should be really useful for capacitors and transistors integrated on flexible electronics and displays.

RT Atomic Layer Deposition of ZrO2 By Using Plasma Excited Water Vapor

Monday, 30 May 2016: 12:10
Sapphire 410 A (Hilton San Diego Bayfront)
K. Kanomata (Yamagata University, CREST, JST), K. Tokoro, T. Imai, P. P. Pansila, M. Miura (Yamagata University), B. Ahmmad (Yamagata University,, CREST, JST), S. Kubota (Yamagata University, CREST, JST), K. Hirahara (Yamagata University), and F. Hirose (Yamagata University, CREST, JST)
Size of semiconductor devices in large-scale integration has reached the submicron range where gate oxide films in metal oxide semiconductor (MOS) devices need to be fabricated at a nanometer scale. Atomic layer deposition (ALD) is a technology for depositing dielectric films with monolayer precision by repeating adsorption of a source gas on substrate that is subsequently reactivated for further adsorption [1]. Zirconium oxide (ZrO2) is believed to be a candidate as the high-k gate oxide material [2]. The growth temperature for the ZrO2 deposition has been desired to be decreased to near room temperature (RT) because the interfacial layer is formed by the solid phase reaction with heating process [3]. In this work, we developed a RT atomic layer deposition of ZrO2 with tetrakis (ethylmethylamino) zirconium (TEMAZ) and a remote-plasma excited water vapor.

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