Here is a cool upcoming presentation! Room temperature ALD of ZrO2 by using plasma excited water vapor (!) is to be presented at ECS Meeting in San Diego May 30 by K. Kanomata from Yamagata University, CREST, Japan. I can´t remember seeing Plasma activated water being used for ALD before - genius! This should be really useful for capacitors and transistors integrated on flexible electronics and displays.
RT Atomic Layer Deposition of ZrO2 By Using Plasma Excited Water Vapor
Monday, 30 May 2016: 12:10
Sapphire 410 A (Hilton San Diego Bayfront)
K. Kanomata (Yamagata University, CREST, JST), K. Tokoro, T. Imai, P.
P. Pansila, M. Miura (Yamagata University), B. Ahmmad (Yamagata
University,, CREST, JST), S. Kubota (Yamagata University, CREST, JST),
K. Hirahara (Yamagata University), and F. Hirose (Yamagata University,
CREST, JST)
Size of semiconductor devices in large-scale integration has reached
the submicron range where gate oxide films in metal oxide semiconductor
(MOS) devices need to be fabricated at a nanometer scale. Atomic layer
deposition (ALD) is a technology for depositing dielectric films with
monolayer precision by repeating adsorption of a source gas on substrate
that is subsequently reactivated for further adsorption [1]. Zirconium
oxide (ZrO
2) is believed to be a candidate as the high-k gate oxide material [2]. The growth temperature for the ZrO
2
deposition has been desired to be decreased to near room temperature
(RT) because the interfacial layer is formed by the solid phase reaction
with heating process [3]. In this work, we developed a RT atomic layer
deposition of ZrO
2 with tetrakis (ethylmethylamino) zirconium (TEMAZ) and a remote-plasma excited water vapor.
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