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As reported by Nanotechweb.org : Researchers at Korea University are reporting on a new way to make
nano-trenches less than 5 nm deep with a technique called atomic-layer
deposition (ALD), and single-walled carbon nanotubes as templates. The
structures produced could be used to make high-density resistive
components for a wide range of nanoelectronics devices.
(a) Schematic diagram representing the creation of SiO2 nano-trenches. AFM image of (b) nano-trenches after further reactive ion etch of SiO2 through an alumina mask, and (c) SiO2 nano-trenches obtained by an additional etching in RIE and wet etching of alumina. Courtesy: Nanotechnology
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