Monday, April 18, 2016

ALD and CNT template produces sub-5 nm features

As reported by : Researchers at Korea University are reporting on a new way to make nano-trenches less than 5 nm deep with a technique called atomic-layer deposition (ALD), and single-walled carbon nanotubes as templates. The structures produced could be used to make high-density resistive components for a wide range of nanoelectronics devices.

Full story here

(a) Schematic diagram representing the creation of SiO2 nano-trenches. AFM image of (b) nano-trenches after further reactive ion etch of SiO2 through an alumina mask, and (c) SiO2 nano-trenches obtained by an additional etching in RIE and wet etching of alumina. Courtesy: Nanotechnology


  1. I like this web site very much, Its a really nice post to read and get info . logo design companies

  2. Aw, this was quite a good post. In concept I have to place in writing similar to this moreover - spending time and actual effort to make a excellent article… but what / things I say… I procrastinate alot and no indicates often get something carried out. new york web design company