Monday, April 18, 2016

ALD and CNT template produces sub-5 nm features

As reported by : Researchers at Korea University are reporting on a new way to make nano-trenches less than 5 nm deep with a technique called atomic-layer deposition (ALD), and single-walled carbon nanotubes as templates. The structures produced could be used to make high-density resistive components for a wide range of nanoelectronics devices.

Full story here

(a) Schematic diagram representing the creation of SiO2 nano-trenches. AFM image of (b) nano-trenches after further reactive ion etch of SiO2 through an alumina mask, and (c) SiO2 nano-trenches obtained by an additional etching in RIE and wet etching of alumina. Courtesy: Nanotechnology


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