Friday, April 15, 2016

RASIRC to Present Novel Reactive Chemistry Sources at Surface Preparation and Cleaning (SPCC) Conference

RASIRC today announced that Chief Technology Officer Dan Alvarez, PhD will present at the upcoming Surface Preparation and Cleaning Conference. The presentation titled "Novel Reactive Chemistry Sources for Surface Passivation of Future Generation Channel Materials" will be presented April 20 in the Beyond CMOS session. The conference , held April 19-20, 2016 in Santa Clara, California, focuses on developments and challenges in advanced wafer and mask cleaning and surface preparation technologies

 San Diego, CA, April 14, 2016 (Newswire.com) - RASIRC today announced that Chief Technology Officer Dan Alvarez, PhD will present at the upcoming Surface Preparation and Cleaning Conference. The presentation titled “Novel Reactive Chemistry Sources for Surface Passivation of Future Generation Channel Materials” will be presented April 20 in the Beyond CMOS session. The conference , held April 19-20, 2016 in Santa Clara, California, focuses on developments and challenges in advanced wafer and mask cleaning and surface preparation technologies.

The RASIRC presentation will focus on new in situ gas phase cleaning and passivation methods for new channel materials that will allow better carrier confinement and mobility. An approach will be described that involves the transfer of substrate dangling bonds to silicon and subsequently functionalized with an oxidant or nitriding agent. Challenges associated with traditional oxidants and promising new chemistries will be discussed. Test results for new delivery techniques for water free hydrogen peroxide and hydrazine will also be covered.

“Novel Gate Stack materials and High Aspect Ratio structures require gas phase treatment, but traditional oxidants and nitriding sources require too much heat and are too aggressive. This created a need for new reactive chemistries,” said Jeffrey Spiegelman, RASIRC President and Founder. “BRUTE hydrogen peroxide and BRUTE hydrazine deliver a safer solution for surface treatment at the atomic interface.”


 
For more information, request a copy of the presentation. Additional information is also available for BRUTE™ hydrogen peroxide and BRUTE™ hydrazine.

For official press release, please click here.