JVSTA ALD & ALE issue is here!

JVSTA ALD & ALE issue is here - Goldig as they say in German!

Review Articles

Atomic layer deposition on polymer fibers and fabrics for multifunctional and electronic textiles

Alexandra H. Brozena, Christopher J. Oldham and Gregory N. Parsons

J. Vac. Sci. Technol. A 34, 010801 (2016); http://dx.doi.org/10.1116/1.4938104

Atomic Layer Deposition (ALD)

• • Thermal chemistry of copper acetamidinate atomic layer deposition precursors on silicon oxide surfaces studied by XPS

    Yunxi Yao and Francisco Zaera

    J. Vac. Sci. Technol. A 34, 01A101 (2016); http://dx.doi.org/10.1116/1.4927843

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  • Comparison of B2O3 and BN deposited by atomic layer deposition for forming ultrashallow dopant regions by solid state diffusion

    Steven Consiglio, Robert D. Clark, David O'Meara, Cory S. Wajda, Kandabara Tapily and Gert J. Leusink

    J. Vac. Sci. Technol. A 34, 01A102 (2016); http://dx.doi.org/10.1116/1.4928705

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  • Atomic layer deposition of molybdenum oxide from (N ^t Bu)2(NMe2)2Mo and O2 plasma

    Martijn F. J. Vos, Bart Macco, Nick F. W. Thissen, Ageeth A. Bol and W. M. M. (Erwin) Kessels

    J. Vac. Sci. Technol. A 34, 01A103 (2016); http://dx.doi.org/10.1116/1.4930161

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  • Dynamic order reduction of thin-film deposition kinetics models: A reaction factorization approach

    Raymond A. Adomaitis

    J. Vac. Sci. Technol. A 34, 01A104 (2016); http://dx.doi.org/10.1116/1.4930591

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  • Diffusion and interface evolution during the atomic layer deposition of TiO2 on GaAs(100) and InAs(100) surfaces

    Liwang Ye and Theodosia Gougousi

    J. Vac. Sci. Technol. A 34, 01A105 (2016); http://dx.doi.org/10.1116/1.4931568

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  • Vanadium dioxide film protected with an atomic-layer-deposited Al2O3 thin film

    Xiao Wang, Yunzhen Cao, Chao Yang, Lu Yan and Ying Li

    J. Vac. Sci. Technol. A 34, 01A106 (2016); http://dx.doi.org/10.1116/1.4931723

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  • Effect of substrate composition on atomic layer deposition using self-assembled monolayers as blocking layers

    Wenyu Zhang and James R. Engstrom

    J. Vac. Sci. Technol. A 34, 01A107 (2016); http://dx.doi.org/10.1116/1.4931722

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  • Mechanistic modeling study on process optimization and precursor utilization with atmospheric spatial atomic layer deposition

    Zhang Deng, Wenjie He, Chenlong Duan, Rong Chen and Bin Shan

    J. Vac. Sci. Technol. A 34, 01A108 (2016); http://dx.doi.org/10.1116/1.4932564

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  • Low-temperature atomic layer deposition of copper(II) oxide thin films

    Tomi Iivonen, Jani Hämäläinen, Benoît Marchand, Kenichiro Mizohata, Miika Mattinen, Georgi Popov, Jiyeon Kim, Roland A. Fischer and Markku Leskelä

    J. Vac. Sci. Technol. A 34, 01A109 (2016); http://dx.doi.org/10.1116/1.4933089

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  • Effect of hydrogen peroxide pretreatment on ZnO-based metal–semiconductor–metal ultraviolet photodetectors deposited using plasma-enhanced atomic layer deposition

    Yu-Chang Lin, Hsin-Ying Lee and Tsung-Hsin Lee

    J. Vac. Sci. Technol. A 34, 01A110 (2016); http://dx.doi.org/10.1116/1.4933169

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  • Atomic layer deposition of ultrathin Cu2O and subsequent reduction to Cu studied by in situ x-ray photoelectron spectroscopy

    Dileep Dhakal, Khaybar Assim, Heinrich Lang, Philipp Bruener, Thomas Grehl, Colin Georgi, Thomas Waechtler, Ramona Ecke, Stefan E. Schulz and Thomas Gessner

    J. Vac. Sci. Technol. A 34, 01A111 (2016); http://dx.doi.org/10.1116/1.4933088

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  • Morphology, composition and electrical properties of SnO2:Cl thin films grown by atomic layer deposition

    Hsyi-En Cheng, Chia-Hui Wen and Ching-Ming Hsu

    J. Vac. Sci. Technol. A 34, 01A112 (2016); http://dx.doi.org/10.1116/1.4933328

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  • Blistering during the atomic layer deposition of iridium

    Pascal Genevée, Ernest Ahiavi, Norik Janunts, Thomas Pertsch, Maria Oliva, Ernst-Bernhard Kley and Adriana Szeghalmi

    J. Vac. Sci. Technol. A 34, 01A113 (2016); http://dx.doi.org/10.1116/1.4934753

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  • Gas permeation barriers deposited by atmospheric pressure plasma enhanced atomic layer deposition

    Lukas Hoffmann, Detlef Theirich, Tim Hasselmann, André Räupke, Daniel Schlamm and Thomas Riedl

    J. Vac. Sci. Technol. A 34, 01A114 (2016); http://dx.doi.org/10.1116/1.4935337

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  • Atomic layer deposited cobalt oxide: An efficient catalyst for NaBH4 hydrolysis

    Dip K. Nandi, Joydev Manna, Arpan Dhara, Pratibha Sharma and Shaibal K. Sarkar

    J. Vac. Sci. Technol. A 34, 01A115 (2016); http://dx.doi.org/10.1116/1.4935353

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  • Novel copper compounds for vapor deposition: Characterization and thermolysis

    Agnes Kurek, Glenn P. A. Yap and Seán T. Barry

    J. Vac. Sci. Technol. A 34, 01A116 (2016); http://dx.doi.org/10.1116/1.4935447

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  • Spectroscopic investigation of the electronic structure of thin atomic layer deposition HfO2 films

    Silma Alberton Corrêa, Simone Brizzi and Dieter Schmeisser

    J. Vac. Sci. Technol. A 34, 01A117 (2016); http://dx.doi.org/10.1116/1.4935338

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  • Room temperature plasma enhanced atomic layer deposition for TiO2 and WO3 films

    Alexander Strobel, Hans-Dieter Schnabel, Ullrich Reinhold, Sebastian Rauer and Andreas Neidhardt

    J. Vac. Sci. Technol. A 34, 01A118 (2016); http://dx.doi.org/10.1116/1.4935356

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  • Atomic layer deposition of environmentally benign SnTiOx as a potential ferroelectric material

    Siliang Chang, Sathees Kannan Selvaraj, Yoon-Young Choi, Seungbum Hong, Serge M. Nakhmanson and Christos G. Takoudis

    J. Vac. Sci. Technol. A 34, 01A119 (2016); http://dx.doi.org/10.1116/1.4935650

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  • Ultraviolet optical properties of aluminum fluoride thin films deposited by atomic layer deposition

    John Hennessy, April D. Jewell, Kunjithapatham Balasubramanian and Shouleh Nikzad

    J. Vac. Sci. Technol. A 34, 01A120 (2016); http://dx.doi.org/10.1116/1.4935450

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  • Fast spatial atomic layer deposition of Al2O3 at low temperature (<100 °C) as a gas permeation barrier for flexible organic light-emitting diode displays

    Hagyoung Choi, Seokyoon Shin, Hyeongtag Jeon, Yeongtae Choi, Junghun Kim, Sanghun Kim, Seog Chul Chung and Kiyoung Oh

    J. Vac. Sci. Technol. A 34, 01A121 (2016); http://dx.doi.org/10.1116/1.4934752

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  • Experimental demonstration of single electron transistors featuring SiO2 plasma-enhanced atomic layer deposition in Ni-SiO2-Ni tunnel junctions

    Golnaz Karbasian, Michael S. McConnell, Alexei O. Orlov, Sergei Rouvimov and Gregory L. Snider

    J. Vac. Sci. Technol. A 34, 01A122 (2016); http://dx.doi.org/10.1116/1.4935960

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  • Low-temperature sequential pulsed chemical vapor deposition of ternary BxGa1-xN and BxIn1-xN thin film alloys

    Ali Haider, Seda Kizir, Cagla Ozgit-Akgun, Ali Kemal Okyay and Necmi Biyikli

    J. Vac. Sci. Technol. A 34, 01A123 (2016); http://dx.doi.org/10.1116/1.4936072

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  • Microscratch testing method for systematic evaluation of the adhesion of atomic layer deposited thin films on silicon

    Lauri Kilpi, Oili M. E. Ylivaara, Antti Vaajoki, Jari Malm, Sakari Sintonen, Marko Tuominen, Riikka L. Puurunen and Helena Ronkainen

    J. Vac. Sci. Technol. A 34, 01A124 (2016); http://dx.doi.org/10.1116/1.4935959

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  • Substrate temperature influence on the properties of GaN thin films grown by hollow-cathode plasma-assisted atomic layer deposition

    Mustafa Alevli, Neşe Gungor, Ali Haider, Seda Kizir, Shahid A. Leghari and Necmi Biyikli

    J. Vac. Sci. Technol. A 34, 01A125 (2016); http://dx.doi.org/10.1116/1.4936230

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  • Ag films grown by remote plasma enhanced atomic layer deposition on different substrates

    Akinwumi A. Amusan, Bodo Kalkofen, Hassan Gargouri, Klaus Wandel, Cay Pinnow, Marco Lisker and Edmund P. Burte

    J. Vac. Sci. Technol. A 34, 01A126 (2016); http://dx.doi.org/10.1116/1.4936221

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  • Plasma-enhanced atomic layer deposition of titanium oxynitrides films: A comparative spectroscopic and electrical study

    Małgorzata Sowińska, Karsten Henkel, Dieter Schmeißer, Irina Kärkkänen, Jessica Schneidewind, Franziska Naumann, Bernd Gruska and Hassan Gargouri

    J. Vac. Sci. Technol. A 34, 01A127 (2016); http://dx.doi.org/10.1116/1.4936227

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  • Atomic layer deposition of alternative glass microchannel plates

    Aileen O'Mahony, Christopher A. Craven, Michael J. Minot, Mark A. Popecki, Joseph M. Renaud, Daniel C. Bennis, Justin L. Bond, Michael E. Stochaj, Michael R. Foley, Bernhard W. Adams, Anil U. Mane, Jeffrey W. Elam, Camden Ertley and Oswald H. W. Siegmund

    J. Vac. Sci. Technol. A 34, 01A128 (2016); http://dx.doi.org/10.1116/1.4936231

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  • Comparison of tungsten films grown by CVD and hot-wire assisted atomic layer deposition in a cold-wall reactor

    Mengdi Yang, Antonius A. I. Aarnink, Alexey Y. Kovalgin, Dirk. J. Gravesteijn, Rob A. M. Wolters and Jurriaan Schmitz

    J. Vac. Sci. Technol. A 34, 01A129 (2016); http://dx.doi.org/10.1116/1.4936387

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  • Luminescence properties of lanthanide and ytterbium lanthanide titanate thin films grown by atomic layer deposition

    Per-Anders Hansen, Helmer Fjellvåg, Terje G. Finstad and Ola Nilsen

    J. Vac. Sci. Technol. A 34, 01A130 (2016); http://dx.doi.org/10.1116/1.4936389

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  • Novel chemoresistive CH4 sensor with 10 ppm sensitivity based on multiwalled carbon nanotubes functionalized with SnO2 nanocrystals

    Md Tanim Humayun, Ralu Divan, Yuzi Liu, Lara Gundel, Paul A. Solomon and Igor Paprotny

    J. Vac. Sci. Technol. A 34, 01A131 (2016); http://dx.doi.org/10.1116/1.4936384

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  • Atomic layer deposition of boron-containing films using B2F4

    Anil U. Mane, Jeffrey W. Elam, Alexander Goldberg, Thomas E. Seidel, Mathew D. Halls, Michael I. Current, Joseph Despres, Oleg Byl, Ying Tang and Joseph Sweeney

    J. Vac. Sci. Technol. A 34, 01A132 (2016); http://dx.doi.org/10.1116/1.4935651

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  • Electrical characterization of atomic layer deposited Al2O3/InN interfaces

    Ye Jia, Amir M. Dabiran and Uttam Singisetti

    J. Vac. Sci. Technol. A 34, 01A133 (2016); http://dx.doi.org/10.1116/1.4936928

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  • Rapid visible color change and physical swelling during water exposure in triethanolamine-metalcone films formed by molecular layer deposition

    Paul C. Lemaire, Christopher J. Oldham and Gregory N. Parsons

    J. Vac. Sci. Technol. A 34, 01A134 (2016); http://dx.doi.org/10.1116/1.4937222

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  • Enhancing of catalytic properties of vanadia via surface doping with phosphorus using atomic layer deposition

    Verena E. Strempel, Daniel Löffler, Jutta Kröhnert, Katarzyna Skorupska, Benjamin Johnson, Raoul Naumann d'Alnoncourt, Matthias Driess and Frank Rosowski

    J. Vac. Sci. Technol. A 34, 01A135 (2016); http://dx.doi.org/10.1116/1.4936390

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  • Low-temperature SiON films deposited by plasma-enhanced atomic layer deposition method using activated silicon precursor

    Sungin Suh, Seung Wook Ryu, Seongjae Cho, Jun-Rae Kim, Seongkyung Kim, Cheol Seong Hwang and Hyeong Joon Kim

    J. Vac. Sci. Technol. A 34, 01A136 (2016); http://dx.doi.org/10.1116/1.4937734

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  • Comparison of trimethylgallium and triethylgallium as “Ga” source materials for the growth of ultrathin GaN films on Si (100) substrates via hollow-cathode plasma-assisted atomic layer deposition

    Mustafa Alevli, Ali Haider, Seda Kizir, Shahid A. Leghari and Necmi Biyikli

    J. Vac. Sci. Technol. A 34, 01A137 (2016); http://dx.doi.org/10.1116/1.4937725

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  • Atomic layer deposition by reaction of molecular oxygen with tetrakisdimethylamido-metal precursors

    J Provine, Peter Schindler, Jan Torgersen, Hyo Jin Kim, Hans-Peter Karnthaler and Fritz B. Prinz

    J. Vac. Sci. Technol. A 34, 01A138 (2016); http://dx.doi.org/10.1116/1.4937991

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  • Atomic layer deposition of Al2O3 for single electron transistors utilizing Pt oxidation and reduction

    Michael S. McConnell, Louisa C. Schneider, Golnaz Karbasian, Sergei Rouvimov, Alexei O. Orlov and Gregory L. Snider

    J. Vac. Sci. Technol. A 34, 01A139 (2016); http://dx.doi.org/10.1116/1.4937992

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  • Plasma enhanced atomic layer deposition of silicon nitride using neopentasilane

    Stephen Weeks, Greg Nowling, Nobi Fuchigami, Michael Bowes and Karl Littau

    J. Vac. Sci. Technol. A 34, 01A140 (2016); http://dx.doi.org/10.1116/1.4937993

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  • Ultraviolet photodetector based on MgxZn1-xO films using plasma-enhanced atomic layer deposition

    Yu-Chang Lin, Hsin-Ying Lee and Ching-Ting Lee

    J. Vac. Sci. Technol. A 34, 01A141 (2016); http://dx.doi.org/10.1116/1.4938074

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  • Atomic layer deposition of NiS and its application as cathode material in dye sensitized solar cell

    Neha Mahuli and Shaibal K. Sarkar

    J. Vac. Sci. Technol. A 34, 01A142 (2016); http://dx.doi.org/10.1116/1.4938078

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  • Standing and sitting adlayers in atomic layer deposition of ZnO

    Zhengning Gao, Fei Wu, Yoon Myung, Ruixiang Fei, Ravindra Kanjolia, Li Yang and Parag Banerjee

    J. Vac. Sci. Technol. A 34, 01A143 (2016); http://dx.doi.org/10.1116/1.4938080

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  • Thickness-dependent growth orientation of F-doped ZnO films formed by atomic layer deposition

    Kyung-Mun Kang, Yong-June Choi, Geun Young Yeom and Hyung-Ho Park

    J. Vac. Sci. Technol. A 34, 01A144 (2016); http://dx.doi.org/10.1116/1.4938180

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  • Periodic oxidation for fabricating titanium oxynitride thin films via atomic layer deposition

    Shinya Iwashita, Shintaro Aoyama, Masayuki Nasu, Kouji Shimomura, Naotaka Noro, Toshio Hasegawa, Yasushi Akasaka and Kohei Miyashita

    J. Vac. Sci. Technol. A 34, 01A145 (2016); http://dx.doi.org/10.1116/1.4938106

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  • Spatial atomic layer deposition on flexible porous substrates: ZnO on anodic aluminum oxide films and Al2O3 on Li ion battery electrodes

    Kashish Sharma, Dmitri Routkevitch, Natalia Varaksa and Steven M. George

    J. Vac. Sci. Technol. A 34, 01A146 (2016); http://dx.doi.org/10.1116/1.4937728

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  • Low-temperature atomic layer deposition of TiO2 thin layers for the processing of memristive devices

    Samuele Porro, Alladin Jasmin, Katarzyna Bejtka, Daniele Conti, Denis Perrone, Salvatore Guastella, Candido F. Pirri, Alessandro Chiolerio and Carlo Ricciardi

    J. Vac. Sci. Technol. A 34, 01A147 (2016); http://dx.doi.org/10.1116/1.4938465

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  • Inherent substrate-dependent growth initiation and selective-area atomic layer deposition of TiO2 using “water-free” metal-halide/metal alkoxide reactants

    Sarah E. Atanasov, Berç Kalanyan and Gregory N. Parsons

    J. Vac. Sci. Technol. A 34, 01A148 (2016); http://dx.doi.org/10.1116/1.4938481

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  • Probabilistic distributions of pinhole defects in atomic layer deposited films on polymeric substrates

    Alexander S. Yersak and Yung-Cheng Lee

    J. Vac. Sci. Technol. A 34, 01A149 (2016); http://dx.doi.org/10.1116/1.4938496

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  • Simulation of nucleation and growth of atomic layer deposition phosphorus for doping of advanced FinFETs

    Thomas E. Seidel, Alexander Goldberg, Mat D. Halls and Michael I. Current

    J. Vac. Sci. Technol. A 34, 01A150 (2016); http://dx.doi.org/10.1116/1.4938585

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  • Properties of nanostructured undoped ZrO2 thin film electrolytes by plasma enhanced atomic layer deposition for thin film solid oxide fuel cells

    Gu Young Cho, Seungtak Noh, Yoon Ho Lee, Sanghoon Ji, Soon Wook Hong, Bongjun Koo, Jihwan An, Young-Beom Kim and Suk Won Cha

    J. Vac. Sci. Technol. A 34, 01A151 (2016); http://dx.doi.org/10.1116/1.4938105

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  • Low temperature platinum atomic layer deposition on nylon-6 for highly conductive and catalytic fiber mats

    J. Zachary Mundy, Arya Shafiefarhood, Fanxing Li, Saad A. Khan and Gregory N. Parsons

    J. Vac. Sci. Technol. A 34, 01A152 (2016); http://dx.doi.org/10.1116/1.4935448

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Atomic Layer Etching (ALE)

• • Fluorocarbon assisted atomic layer etching of SiO2 and Si using cyclic Ar/C4F8 and Ar/CHF3 plasma

    Dominik Metzler, Chen Li, Sebastian Engelmann, Robert L. Bruce, Eric A. Joseph and Gottlieb S. Oehrlein

    J. Vac. Sci. Technol. A 34, 01B101 (2016); http://dx.doi.org/10.1116/1.4935462

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  • Application of cyclic fluorocarbon/argon discharges to device patterning

    Dominik Metzler, Kishore Uppireddi, Robert L. Bruce, Hiroyuki Miyazoe, Yu Zhu, William Price, Ed S. Sikorski, Chen Li, Sebastian U. Engelmann, Eric A. Joseph and Gottlieb S. Oehrlein

    J. Vac. Sci. Technol. A 34, 01B102 (2016); http://dx.doi.org/10.1116/1.4935460

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  • Initial evaluation and comparison of plasma damage to atomic layer carbon materials using conventional and low Te plasma sources

    Ashish V. Jagtiani, Hiroyuki Miyazoe, Josephine Chang, Damon B. Farmer, Michael Engel, Deborah Neumayer, Shu-Jen Han, Sebastian U. Engelmann, David R. Boris, Sandra C. Hernández, Evgeniya H. Lock, Scott G. Walton and Eric A. Joseph

    J. Vac. Sci. Technol. A 34, 01B103 (2016); http://dx.doi.org/10.1116/1.4936622

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