Thursday, September 12, 2019

The website for the 2020 Area Selective Deposition Workshop is now live!

Developments in nanoelectronics and nanoscale surface modification have continued to drive the need for more elegant and reliable bottom-up area selective deposition (ASD) strategies. Most notably, the semiconductor industry has relentlessly pursued sub-10 nm transistor fabrication for next-generation devices, an endeavor that increasingly relies on selective deposition techniques to facilitate proper material alignment. However, other fields beyond traditional transistor fabrication have also found potential applications for selective deposition. Mixed-material catalysts have consistently shown the benefits of having site-specific material growth, but new optical devices and materials for energy storage have also contributed to an increased focus on developing new strategies for ASD.




In an effort to help facilitate the progression of ASD techniques, Stanford University is proud to host the 5th Area Selective Deposition Workshop (ASD 2020), held on April 2–3, 2020 in Palo Alto, California USA. Located in the heart of Silicon Valley, this year’s workshop will act as a central event for sharing and discussing the newest developments in ASD by gathering leading experts from both academia and industry. Attendees can expect to participate in talks regarding fundamental challenges related to recent developments in ASD, applications for ASD in next-generation technology, emergent processes for implementing ASD techniques, and new perspectives on metrological and characterization strategies for further understanding persistent mechanistic challenges.

Based on the success of the previous workshops, ASD 2020 will consist of two days of presentations by invited and contributing speakers, as well as a banquet reception and poster session at Stanford University. We hope that guests will also have time to experience some of the local attractions and natural beauty that the Bay Area has to offer!

Wednesday, September 11, 2019

Industrial Atomic Layer Deposition for Image Sensors and Light Sources

Here is an interview by SEMI (LINK) with Dr. Mikko Söderlund, sales director for Beneq’s semiconductor business. The interview is about trends in ALD applications. Söderlund shared his views ahead of his presentation at SEMI MEMS & Imaging Sensors Summit, 25-27 September, 2019, at the WTC in Grenoble, France. Besides the leading edge 300 mm semi market Beneq sees ALD growth in the following markets.

  • Backside Illuminated (BSI) CMOS Image Sensors (CIS)  
  • MEMS (actuators and sensors, RF) 
  • GaN Power and RF
  • Photonics.



Dr. Mikko Söderlund is the Sales Director for Beneq’s semiconductor business. He has more than 20 years of experience in product development, product management, technical sales and business development across Photonics, OLED, and Semiconductor industries. Mikko received his Ph.D. in Micro- and Nanotechnology from the Helsinki University of Technology.
 

Tuesday, September 10, 2019

LG Technology Ventures & Mitsui Kinzoku-SBI Material Innovation Fund Join Forge Nano Inc. Series A

LOUISVILLE, Colo., Sept. 5, 2019 /PRNewswire/ -- Mitsui Kinzoku-SBI Material Innovation Fund and LG Technology Ventures join in Forge Nano's Series A, bringing the total investment to date to $18M, up from Volkswagen's initial $10M investment announced in January 2019.

The investment will help to accelerate advanced materials for new battery technologies while also broadening applications for atomic-level nano-coatings into a diverse set of new markets. Forge Nano's technology paves the way for entirely new applications for nanoscale surface engineering. Atomic layer deposition (ALD) is an ultra-thin film deposition process that allows precision coatings that are the thickness of one atom to be deposited one layer at a time onto a surface. Forge Nano's ALD enabled core-shell battery materials have been demonstrated to improve the energy density, charge rate, cycle life, and safety of lithium-ion batteries as well as to enable next generation battery technologies.

Beyond batteries, ALD nano-coatings are enabling the next era of higher performance materials for catalysts, 3D printing, thermal fillers, separations and an array of other new market applications. Virtually any application using industrial powders that benefit from tuned surface properties but require precise, uniform and conformal coatings that are chemically bonded to the surface can now use ALD nano-coatings to unlock the next level of performance and value.

"Forge's proprietary nano-coating technology and high-throughput manufacturing processes will open the door for a new stage of high performance materials. A collaboration between Forge Nano and Mitsui Kinzoku will accelerate the production of high performance materials and provide our customers high value products in various market."
-Mitsui Kinzoku-SBI Material Innovation Fund

About Mitsui Kinzoku-SBI Material Innovation Fund: Mitsui Kinzoku-SBI Material Innovation Fund was jointly established in 2017 by Mitsui Kinzoku and SBI Investment. Its investment target is start-up companies with material technologies, material manufacturing and processing know-how which are each likely to generate a business synergy effect with Mitsui Kinzoku's business.

About LG Technology Ventures: LG Technology Ventures was established in 2018 and is the venture capital investment arm of the LG Group of South Korea. The LG Technology Ventures team consists of experienced investors, entrepreneurs, technologists, and industry domain experts. Currently, LG Technology Ventures is managing over $400 million of fund assets and invests in early-stage information technology, automotive, manufacturing, life-sciences, energy, and advanced materials companies.

About Forge Nano: Based in Louisville, Colo., Forge Nano is a global leader in surface engineering and precision nano-coating technology. Forge Nano's proprietary technology and manufacturing processes make angstrom-thick coatings fast, affordable and commercially viable for a wide range of materials, applications and industries. Forge Nano's suite of ALD products and services covers the full spectrum from lab-scale to pilot and commercial-scale manufacturing systems. For more information visit www.ForgeNano.com

Monday, September 9, 2019

ALD PhD Thesises form the dawn of time

Number of PhD thesis' about Atomic Layer Deposition (ALD), according to data collector in the VPHA, up to sept. 2019

Presentations of the EuroCVD 22 – Baltic ALD 16 | 2019 conference for download

Please find below the presentations of the EuroCVD 22 – Baltic ALD 16 | 2019 conference (Luxembourg - June 24 to 28, 2019) that has been published online so far (LINK)


Programme: LINK

Invited speakers:
Oral presentations:

Abstracts

Abstracts_Oral_Presentations_Day_1
Abstracts_Oral_Presentations_Day_2
Abstracts_Oral_Presentations_Day_3
Abstracts_Oral_Presentations_Day_4
Abstracts_Oral_Presentations_Day_5

Friday, September 6, 2019

Hydrogen diffusion barrier using thermal ALD Al2O3 encapsulation for IGZO TFTs

Amorphous phase In-Ga-Zn-O(IGZO), the typical oxide TFT compositions, has 20 to 50 times higher of field-effect mobility than that of a-Si TFTs and excellent SS (Sub-Threshold Voltage Swing) properties as well as has been very promising to apply for high performance and large area displays and for transparent displays due to their superior properties and good uniformity.

But IGZO TFTs with PECVD SiNx as an encapsulation layer have degraded their superb properties because hydrogen included in SiNx from 20% to 30% has passed through OLED layers and then diffused into IGZO layers.



Comparison of I-V characteristic of a-IGZO TFTs with and without hydrogen diffusio


If this performance degradation by hydrogen diffusion showed in typical I-V graph, SS slop would be decreased, Ioff increased and Vth shifted to negative direction from the original I-V curve.

In case of applying to OLED display with IGZO TFTs using SiNx encapsulation layers including hydrogen, Al2O3 layers would be the very excellent barriers not to degrade IGZO TFTs properties by diffusion of hydrogen from SiNx.

However it is not good choice to apply PEALD Al2O3 using plasma to the first encapsulation layer because oxygen plasma could cause the side effect such as cathode oxidation during the process. So IGZO TFTs and thermal ALD Al2O3 encapsulation layers without plasma damage could be optimum combination.

NCD Lucida GD Series that is thermal ALD batch equipment for mass production to deposit on large substrates up to 6th generation glasses could provide superior Al2O3 hydrogen barriers preventing diffusion into IGZO TFTs from PECVD SiNx encapsulation layers including hydrogen as well as expect to apply to transparent fordable OLED displays by using Al2O3/Polymer/Al2O3 encapsulation layers.


NCD’s LucidaTM GD Series ALD

Tuesday, September 3, 2019

ALD - Why ASMI is doing so well

[BITS&CHIPS] Grueling work with Intel cemented the company’s position in the atomic layer deposition market, but the emergence of more ALD semiconductor applications was required for that investment to really pay off. The story of why ASM International is doing so well these days.

ASM International is on a roll. While the semiconductor industry has been experiencing a cold spell since mid to late 2018, the Almere-based semiconductor equipment maker has been posting one quarterly sales growth after the other. Last July, front-end sales even reached an all-time record – and the orders keep pouring in. Many of those are for ASMI’s atomic layer deposition (ALD) systems, which at the moment are its best selling product line, CEO Chuck del Prado noted in a conference call with investors, though he added demand is generally healthy in other businesses as well.
Full story: When persistence pays off: why ASMI is doing so well [LINK]
An ASM Pulsar 2000 form the year 2000 (Photo CAE LINK), which was used by many semiconductor fabs for the early development of ALD High-k in both logic and DRAM (Al2O3, ZrO2, HfO2, and others). One of the first high volume manufacturing applications was dielectric layers for GMR and TMR magnetic heads by, e.g., Seagate. The 200 mm single wafer ALD reactor was later made as a 300 mm reactor for the first roll-out of high-k ALD at Intel 45 nm node in 2007. The Pulsar was typical at the beginning used on the Polygon platform. However, now it is available on the new more productive XP series of the ASM platforms (LINK).