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TechInsights found Samsung DRAM chips in Samsung Galaxy S23 with Five EUV mask layers. These are from DRAM wafers produced in the so-called D1a node (or D1α, α as in alpha)
👉https://t.co/oSv4yiHJiB
— TechInsights (@techinsightsinc) May 1, 2023
Get your products to market faster: @TechInsightsinc found next-gen #DRAM found in the #GalaxyS23. @Samsung is the first company to apply five #EUV lithography masks on DRAM D1a, the first node to fully adopt EUVL for #DRAM. Learn more. #semiconductor pic.twitter.com/2Pqg7gKuE9
This is in line with a previous press release from Samsung (2020) so no real surprise here: Samsung Announces Industry’s First EUV DRAM with Shipment of First Million Modules – Samsung Global Newsroom
"EUV to be fully deployed from 4th-gen 10nm-class DRAM (D1a) next year"
EUV will be fully deployed in Samsung’s future generations of DRAM, starting with its fourth-generation 10nm-class (D1a) or the highly-advanced 14nm-class, DRAM. Samsung expects to begin volume production of D1a-based DDR5 and LPDDR5 next year, which would double manufacturing productivity of the 12-inch D1x wafers.
The Electrochemical Society (ECS) conference is an international event running every spring and fall, and gathering 2000-4000 participants and 30-40 exhibitors both from academia and industry.
The conference has a strong focus on emerging technology and applications in both electrochemistry and solid-state science & technology.
This fall the event will be held as 244th ECS Meeting on Oct. 8-12, 2023 in Gothenburg (Sweden).
The full program as well as information on travel assistance for students can be found on https://www.electrochem.org/
The organizers of symposium G01 on “Atomic Layer Deposition & Etching Applications, 19” encourage you to submit your abstracts on the following (and closely related) topics:
1. Semiconductor CMOS applications: development and integration of ALD high-k oxides and metal electrodes with conventional and high-mobility channel materials;
2. Volatile and non-volatile memory applications: extendibility, Flash, MIM, MIS, RF capacitors, etc.;
3. Interconnects and contacts: integration of ALD films with Cu and low-k materials;
4. Fundamentals of ALD processing: reaction mechanisms, in-situ measurement, modeling, theory;
5. New precursors and delivery systems;
6. Optical and photonic applications;
7. Coating of nanoporous materials by ALD;
8. MLD and hybrid ALD/MLD;
9. ALD for energy conversion applications such as fuel cells, photovoltaics, etc.;
10. ALD for energy storage applications;
11. Productivity enhancement, scale-up and commercialization of ALD equipment and processes for rigid and flexible substrates, including roll-to-roll deposition;
12. Area-selective ALD;
13. Atomic Layer Etching (‘reverse ALD’) and related topics aiming at self-limited etching, such as atomic layer cleaning, etc.
Abstract submission
Meeting abstracts should be submitted not later than the deadline of April 21, 2023 via the ECS website: Abstract submission instruction
List of invited speakers
· Johan Swerts, (Imec, Belgium) KEYNOTE: ALD challenges and opportunities in the light of future trends in electronics
· Stephan Wege (Plasway Technology, Germany), Reactor design for combined ALD & ALE
· Masanobu Honda (TEL, Japan), Novel surface reactions in low-temperature plasma etching
· Barbara Hughes, (Forge Nano, USA), Dual Coatings, Triple the Benefit; Atomic Armor for Better Battery Performance
· Juhani Taskinen, (Applied Materials-Picosun, Finland), ALD for biomedicine
· Alex Kozen (Univ. of Maryland, USA), ALD for improved Lithium Ion Batteries
· Malachi Noked (Bar-Ilan Univ., Israel), ALD/MLD for batteries
· Yong Qin (Chinese Academy of Sciences), ALD for catalysis
· Jan Macák, (Univ. of Pardubice, Czechia), ALD on nanotubular materials and applications
· Bora Karasulu, Univ. of Warwick, UK), Atomistic Insights into Continuous and Area-Selective ALD Processes: First-principles Simulations of the Underpinning Surface Chemistry
· Ageeth Bol (Univ. Michigan, USA), ALD on 2D materials
· Pieter-Jan Wyndaele (KU Leuven-imec, Belgium), Enabling high-quality dielectric passivation on Monolayer WS2 using a sacrificial Graphene Oxide template
· Elton Graugnard (Boise State Univ., USA), Atomic Layer Processing of MoS2
· Han-Bo-Ram Lee (Incheon National Univ., Korea), Area-Selective Deposition using Homometallic Precursor Inhibitors
· Ralf Tonner (Univ. Leipzig, Germany), Ab initio approaches to area-selective deposition
· Nick Chittock (TU Eindhoven, Netherlands), Utilizing plasmas for isotropic Atomic Layer Etching
· Heeyeop Chae (Sungkyunkwan Univ., Korea), Plasma-enhanced Atomic Layer Etching for Metals and Dielectric Materials
· Charles Winter (Wayne State Univ., USA), New Precursors and Processes for the Thermal ALD of Metal Thin Films
· Anjana Devi, Ruhr Univ. Bochum, Germany), Novel precursors dedicated for Atomic Layer Processing
Visa and travel
For more information, see: www.electrochem.org/244/visa-
In addition, Mrs. Francesca Spagnuolo at the ECS (Francesca.Spagnuolo@
We are looking forward to meeting you in Gothenburg !
“The test conducted by our global customer on the Guidance Series, an ALD equipment developed for the first time in the world in 2020, has been completed and we expect the purchase order to come in the first half of this year,” Hwang told Maeil Business Newspaper.
Jonas Sundqvist joined the ALD Stories podcast again to talk about his company, AlixLabs! Check out their Atomic Layer Etch Pitch Splitting tech and how it challenges traditional patterning techniques.
I have been asking the AI powered ChatGPT some simple questions - what do you think? Is there a better way to explain ALD and ALE in a simple way? I like the ALE answer more than the ALD answer.