Wednesday, October 21, 2015

Picosun's PICOPLASMA™ technology a hit

Picosun Oy, reports continuous success for its plasma ALD technology.

Picosun’s patented* PICOPLASMA™ source system is now available on cluster integrated, SEMI S2 certified PICOSUN™ P-seriesproduction ALD modules. The remote, inductively coupled plasma with highly reactive radicals extends the selection of ALD processes and allows damage-free coating of sensitive substrates such as plastics, polymers, or metal foils. A prime example of this is the first low temperature ALD graphene deposition in a PICOSUN™ plasma ALD tool**.


Graphene depsoited by Xi'an Jiaotong University in a Picosun ALD reactor. A whole new method for the synthesis of graphene at low temperatures by means of remote plasma-enhanced atomic layer deposition (PEALD) 


The PICOPLASMA™ source system is also ideal for deposition of conductive materials such as pure metals or nitrides without risk of short-circuiting or particle formation. Its optimized design enables constant breakthroughs in ALD metal processes, such as the recently reported full wafer gold deposition using Picosun’s plasma ALD technology***.


The PICOPLASMA™ source system can be mounted on existing PICOSUN™ ALD reactors or the whole PEALD system can be installed as one compact, small footprint deposition unit capable of easy implementation, quick maintenance, and low cost-of-ownership. The system can also be fully automated by integrating it into the PICOPLATFORM™ cluster tool.


“Plasma-assisted ALD processes, such as high quality noble metal or nitride layers, are becoming essential in the manufacturing of various microelectronic components. Especially in compound semiconductor device and MEMS manufacturing low processing temperatures, enabled by plasma ALD, are often crucial. The non-destructive, radical-based processing with our PICOPLASMA™ systems is enabling the future technology nodes for global semiconductor industries,” summarizes Juhana Kostamo, Managing Director of Picosun.


* Patent No. US 9,095,869; multiple patents pending