ALD, ALE and exciting nanoelectronic materials research at SEMICON Europa, 6-8 October, Dresden

SEMICON Europa this year has turned out to be a major event for ALD and exciting nanoelectronic materials research. Here are I have have highlighted some of the events with respect to this.

Columbus, Tuesday Oct 6, 13:45, ALD / ALE Sympoium of The ALD Lab Dresden

09:00	Welcome	Organized by: Supported by:
	Prof. Johann W. Bartha, TU Dresden
09:15	In situ monitoring of Atomic Layer Deposition in porous materials
	Martin Knaut, TU Dresden
09:40	Passivation of MEMS by Atomic Layer Deposition
	Matthias Schwille, Robert Bosch
10:05	Growth Monitoring by XPS and LEIS Investigations of Ultrathin Copper Films Deposited by Atomic Layer Deposition
	Dileep Dhakal, TU Chemnitz/FhG ENAS
10:30	High-k dielectrics by ALD for BEOL compatible MIM
	Wenke Weinreich, FhG IPMS-CNT
10:55	ALD coatings for applications as permeation barrier and protective layer in fiber-reinforced materials
	Mario Krug, FhG IKTS
11:20	ALD for solar cell application
	Ingo Dirnstorfer, NaMLab
11:45	Plasma enhanced ALD process for TiO2- and WO3- films
	Alexander Strobel, FH Zwickau
12:10	Lunch Break (Conversation, Networking, Finger food)
13:00	Why do we need Atomic Layer Etching
	Jonas Sundqvist, Lund University/TU Dresden
13:25	Spatial Atomic Layer Deposition and Atomic Layer Etching
	Prof. Fred Roozeboom, TU Eindhoven / TNO Eindhoven
13:50	Atomic Layer Etching: What Can We Learn from Atomic Layer Deposition?
	Harm Knoops, Oxford Instruments/TU Eindhoven
14:15	Hardmask and side wall protection during dry etching with plasma enhanced deposition during dry etching for ALE purposes
	Stephan Wege, Plasway
14:40	Industrial High Throughput Atomic Layer Deposition Equipment and Process for OLED Encapsulation
	Jacques Kools, Encapsulix
15:05	Closing Remarks / Wrap Up
	Prof. Johann W. Bartha, TU Dresden
15:10	End

TECH ARENA, Tuesday Oct 6, 13:45- Emerging Research, Materials and Processes Session

Potential Solutions to Semiconductor Industry’s Challenges

Chair	Hessel Sprey, Manager cooperative programs and university contacts, ASM International
13:45	Introduction
13:50	Next Generation Ferroelectric Field Effect Transistors enabled by Ferroelectric Hafnium Oxide
	Thomas Mikolajick, scientific director, NaMLab Gmbh / TU Dresden
14:15	Large diameter GaN-on-Si epiwafers for Power Switching and RF Power electronics with enhanced efficiency
	Marianne Germain, CEO, EpiGaN nv
14:40	Prospects of Emerging 2D Transition Metal Films for Applications in Electronics
	Georg Duesberg, PI, CRANN, Trinity College Dublin
15:05	Monolayer controlled deposition of 2D transition metal dichalcogenides on large area substrates
	Annelies Delabie, Professor, Imec
15:30	Selective Deposition as Enabler for Shrinking Device Dimensions
	Suvi Haukka, Executive Scientist, ASM Microchemistry Ltd.
15:55	MOFs as Low-k Candidates for Future Technology Nodes
	Christof Wöll, Director, KIT
16:20	Spin-based nanoelectronic devices for mobile Informaion-Communication Technology
	Alina Deac, Group Leader, Helmholtz-Zentrum Dresden - Rossendorf
16:55	Closing Remarks

ARENA 2: Tuesday, 6 October 2015, Best of Advanced Process Control (APC)

12:25   In-Situ process control for Atomic Layer Deposition (ALD)
Johann W. Bartha, TU Dresden