Saturday, October 3, 2015

ALD, ALE and exciting nanoelectronic materials research at SEMICON Europa, 6-8 October, Dresden

SEMICON Europa this year has turned out to be a major event for ALD and exciting nanoelectronic materials research. Here are I have have highlighted some of the events with respect to this.

Columbus, Tuesday Oct 6, 13:45, ALD / ALE Sympoium of The ALD Lab Dresden

09:00WelcomeOrganized by:

Supported by:

cost logo


Prof. Johann W. Bartha, TU Dresden

 09:15In situ monitoring of Atomic Layer Deposition in porous materials

Martin Knaut, TU Dresden

 09:40Passivation of MEMS by Atomic Layer Deposition

Matthias Schwille, Robert Bosch

 10:05Growth Monitoring by XPS and LEIS Investigations of Ultrathin Copper Films Deposited by Atomic Layer Deposition

Dileep Dhakal, TU Chemnitz/FhG ENAS

 10:30High-k dielectrics by ALD for BEOL compatible MIM

Wenke Weinreich, FhG IPMS-CNT

 10:55ALD coatings for applications as permeation barrier and protective layer in fiber-reinforced materials
Mario Krug, FhG IKTS

 11:20ALD for solar cell application
Ingo Dirnstorfer, NaMLab

 11:45Plasma enhanced ALD process for TiO2- and WO3- films

Alexander Strobel, FH Zwickau

 12:10Lunch Break (Conversation, Networking, Finger food)

 13:00Why do we need Atomic Layer Etching

Jonas Sundqvist, Lund University/TU Dresden

 13:25Spatial Atomic Layer Deposition and Atomic Layer Etching

Prof. Fred Roozeboom, TU Eindhoven / TNO Eindhoven

 13:50Atomic Layer Etching: What Can We Learn from Atomic Layer Deposition?

Harm Knoops, Oxford Instruments/TU Eindhoven

 14:15Hardmask and side wall protection during dry etching with plasma enhanced deposition during dry etching for ALE purposes

Stephan Wege, Plasway

 14:40Industrial High Throughput Atomic Layer Deposition Equipment and Process for OLED Encapsulation

Jacques Kools, Encapsulix

 15:05Closing Remarks / Wrap Up

Prof. Johann W. Bartha, TU Dresden


TECH ARENA, Tuesday Oct 6, 13:45- Emerging Research, Materials and Processes Session

Potential Solutions to Semiconductor Industry’s Challenges

Chair Hessel Sprey, Manager cooperative programs and university contacts, ASM International
13:45 Introduction
Next Generation Ferroelectric Field Effect Transistors enabled by Ferroelectric Hafnium Oxide
Thomas Mikolajick, scientific director, NaMLab Gmbh / TU Dresden
Large diameter GaN-on-Si epiwafers for Power Switching and RF Power electronics with enhanced efficiency
Marianne Germain, CEO, EpiGaN nv
Prospects of Emerging 2D Transition Metal Films for Applications in Electronics
Georg Duesberg, PI, CRANN, Trinity College Dublin
Monolayer controlled deposition of 2D transition metal dichalcogenides on large area substrates
Annelies Delabie, Professor, Imec
Selective Deposition as Enabler for Shrinking Device Dimensions
Suvi Haukka, Executive Scientist, ASM Microchemistry Ltd.
MOFs as Low-k Candidates for Future Technology Nodes
Christof Wöll, Director, KIT
Spin-based nanoelectronic devices for mobile Informaion-Communication Technology
Alina Deac, Group Leader, Helmholtz-Zentrum Dresden - Rossendorf
16:55 Closing Remarks

ARENA 2: Tuesday, 6 October 2015, Best of Advanced Process Control (APC)

12:25   In-Situ process control for Atomic Layer Deposition (ALD)
Johann W. Bartha, TU Dresden

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