Saturday, October 3, 2015

ALD, ALE and exciting nanoelectronic materials research at SEMICON Europa, 6-8 October, Dresden

SEMICON Europa this year has turned out to be a major event for ALD and exciting nanoelectronic materials research. Here are I have have highlighted some of the events with respect to this.



Columbus, Tuesday Oct 6, 13:45, ALD / ALE Sympoium of The ALD Lab Dresden

09:00WelcomeOrganized by:



Supported by:

cost logo



  

Prof. Johann W. Bartha, TU Dresden

 09:15In situ monitoring of Atomic Layer Deposition in porous materials

Martin Knaut, TU Dresden

 09:40Passivation of MEMS by Atomic Layer Deposition

Matthias Schwille, Robert Bosch

 10:05Growth Monitoring by XPS and LEIS Investigations of Ultrathin Copper Films Deposited by Atomic Layer Deposition

Dileep Dhakal, TU Chemnitz/FhG ENAS

 10:30High-k dielectrics by ALD for BEOL compatible MIM

Wenke Weinreich, FhG IPMS-CNT


 10:55ALD coatings for applications as permeation barrier and protective layer in fiber-reinforced materials
Mario Krug, FhG IKTS


 11:20ALD for solar cell application
Ingo Dirnstorfer, NaMLab


 11:45Plasma enhanced ALD process for TiO2- and WO3- films

Alexander Strobel, FH Zwickau


 12:10Lunch Break (Conversation, Networking, Finger food)


 13:00Why do we need Atomic Layer Etching

Jonas Sundqvist, Lund University/TU Dresden


 13:25Spatial Atomic Layer Deposition and Atomic Layer Etching

Prof. Fred Roozeboom, TU Eindhoven / TNO Eindhoven


 13:50Atomic Layer Etching: What Can We Learn from Atomic Layer Deposition?

Harm Knoops, Oxford Instruments/TU Eindhoven


 14:15Hardmask and side wall protection during dry etching with plasma enhanced deposition during dry etching for ALE purposes

Stephan Wege, Plasway


 14:40Industrial High Throughput Atomic Layer Deposition Equipment and Process for OLED Encapsulation

Jacques Kools, Encapsulix


 15:05Closing Remarks / Wrap Up

Prof. Johann W. Bartha, TU Dresden


 15:10End

TECH ARENA, Tuesday Oct 6, 13:45- Emerging Research, Materials and Processes Session

Potential Solutions to Semiconductor Industry’s Challenges



Chair Hessel Sprey, Manager cooperative programs and university contacts, ASM International
13:45 Introduction
13:50
Next Generation Ferroelectric Field Effect Transistors enabled by Ferroelectric Hafnium Oxide
Thomas Mikolajick, scientific director, NaMLab Gmbh / TU Dresden
14:15
Large diameter GaN-on-Si epiwafers for Power Switching and RF Power electronics with enhanced efficiency
Marianne Germain, CEO, EpiGaN nv
14:40
Prospects of Emerging 2D Transition Metal Films for Applications in Electronics
Georg Duesberg, PI, CRANN, Trinity College Dublin
15:05
Monolayer controlled deposition of 2D transition metal dichalcogenides on large area substrates
Annelies Delabie, Professor, Imec
15:30
Selective Deposition as Enabler for Shrinking Device Dimensions
Suvi Haukka, Executive Scientist, ASM Microchemistry Ltd.
15:55
MOFs as Low-k Candidates for Future Technology Nodes
Christof Wöll, Director, KIT
16:20
Spin-based nanoelectronic devices for mobile Informaion-Communication Technology
Alina Deac, Group Leader, Helmholtz-Zentrum Dresden - Rossendorf
16:55 Closing Remarks

ARENA 2: Tuesday, 6 October 2015, Best of Advanced Process Control (APC)

12:25   In-Situ process control for Atomic Layer Deposition (ALD)
Johann W. Bartha, TU Dresden