Thursday, October 1, 2015

Atomic Layer Deposition from Dissolved Precursors

Funny, I was just discussing an early french publication (see below) )from 1984 on Twitter with Riikka Puurunen with respect to the VPHA project and almost instantly I got an e-mail alert on this very cool publication in Nano Letter from Julien Bachmann and Lionel Santinacci (Hello again!) and co-workers on the same topic (liquid ALD) - hmm no early night tonight either... 

Atomic Layer Deposition from Dissolved Precursors

Yanlin Wu, Dirk Döhler, Maïssa Barr, Elina Oks, Marc Wolf, Lionel Santinacci, and Julien Bachmann

Department of Chemistry and Pharmacy, Friedrich-Alexander University of Erlangen-Nürnberg, Egerlandstrasse 1, D−91058 Erlangen, Germany
¥ CNRS, CINaM UMR 7325, Aix Marseille Université, F−13288 Marseille, France
‡ Departments of Chemistry and Physics, University of Hamburg, Sedanstrasse 19, D−20146 Hamburg, Germany
Nano Lett., Article ASAP
DOI: 10.1021/acs.nanolett.5b01424


 
 

Abstract

We establish a novel thin film deposition technique by transferring the principles of atomic layer deposition (ALD) known with gaseous precursors toward precursors dissolved in a liquid. An established ALD reaction behaves similarly when performed from solutions. “Solution ALD” (sALD) can coat deep pores in a conformal manner. sALD offers novel opportunities by overcoming the need for volatile and thermally robust precursors. We establish a MgO sALD procedure based on the hydrolysis of a Grignard reagent.


An amazing Spatial Liquid ALD machine from the mid 1980s (Nicolau1985, CEA, FRA)