The agenda for the ALD Lab Dresden Symposium is now set! If you are attending and representing a company or any organization with an offering in ALD or ALE - please brig alog your flyers, coffee mugs, hats and pensand I will sort out a table that is bug enought for displaying it.
Wednesday, September 30, 2015
Tuesday, September 29, 2015
ALD at The 228th ECS Meeting October 11-15, 2015 in Phoenix AZ
Here are some interesting sessions at the upcoming The 228th ECS Meeting October 11-15, 2015 in Phoenix Arizona. Looking forward to hear about the outcome of the panel discussion on ALE!
G01 Atomic Layer Deposition Applications 11
Sponsor(s):
Electronics and Photonics,
Dielectric Science and Technology
Lead Organizer:
F. Roozeboom (Eindhoven University of Technology)
Co-organizers:
Jeffrey W Elam (Argonne National Laboratory)
,
A. Londergan (Qualcomm Technologies, Inc.)
,
O. van der Straten (IBM Research)
,
Annelies Delabie (imec)
and
Stefan De Gendt (imec vzw)
Tuesday, October 13, 2015
08:30-10:00
10:00-12:20
14:00-16:40
16:40-17:20
Wednesday, October 14, 2015
09:00-10:00
10:00-12:20
14:00-15:40
15:40-16:40
18:00-20:00
Thursday, October 15, 2015
08:00-10:00
10:00-11:40
11:40-12:40
Monday, September 28, 2015
Gerogia Tech have demonstrated the first optical rectenna using CNTs and ALD
Using nanometer-scale components - carbon nanotubes and atomic layer deposition researchers at Gerogia Tech have demonstrated the first optical rectenna, a device that combines the functions of antennas and a rectifier diodes to convert light directly into DC current. This could be a future technology to make very efficient solar cells!
Georgia Tech associate professor Baratunde Cola measures the power produced by converting green laser illumination to electricity using the carbon nanotube optical rectenna. (Phys.org)
Youtube interview of Prof. Cola
Read more at: http://phys.org/news/2015-09-optical-rectennacombined-rectifier-antennaconverts-dc.html#jCp
Origin and History of Electro Luminescent Displays
As many of you know, Dr. Tuomo Suntola and co-workes invented many ALD technologies and processes and further developed Atomic Layer Deposition (ALD), then called Atomic Layer Epitaxy (ALE) to an industrial mass production process during the 70s and 80s. They did this in order to have a reliable manufacturing method with atomic level control of dopants and crystallinity of the individual thin film layers making up the EL device for producing Electro Luminescent Displays with reliable operation. Most ALD experts has com across this story numerous times and that is why it is interesting to read about it from a wider perspective. Here is an excellent article on the origin and history of EL Displays worth reading also including the early 20th century discoveries and work on electroluminescense and other big players like SHARP.
http://www.elwire.net/products/electroluminescent-displays/
For more ALD related information and History of they development that took place in Finland you should also visit the ADL 2014 Kyoto Tutorial by Riikka Puuronen (VTT, Finland) which is available at Slideshare: http://www.slideshare.net/RiikkaPuurunen/aldhistory-tutorial-in-kyoyo-al-dhistory-tutorialald2014riikkapuurunen20140615 (Slide above, Riikka Puurunen, VTT))
If you´re interest in more early history of ALD you should read about or join the VHPA Project - it is quite exciting!
Virtual Project on the History of ALD (VPHA)
VPHA is an open collaborative effort, whose goal is to clarify open questions related to the early history of the Atomic Layer Deposition (ALD) thin film deposition technique. VPHA was launched in July 2013. VPHA is based on voluntary efforts, and anyone interested in the history of ALD is welcome to join. All VPHA activities are made in an atmosphere of openness, respect and trust.
http://www.vph-ald.com
Sunday, September 27, 2015
UPDATE- Photo show from Baltic ALD 2015 September 28-29, Tartu, Estonia
Here pictures in social media and that you send to me (jonas.sundqvist@baldengineering.com) will be publish to cover the scientific and social program of The 13th International Baltic Conference on Atomic Layer Deposition will be held in Tartu, Estonia, at the Institute of Physics of the University of Tartu on September 28–29, 2015.
Twitter Hash Tag : #BalticALD
Following the Baltic ALD 2015 Conference, the annual meeting of the COST project HERALD
(http://www.european-ald.net) will be held at Dorpat Conference Center, Tartu, on September 30, 2015. Please also take picture at this event!
SCIENTIFIC PROGRAM:
http://bald2015.ee/program-baltic-ald-2015/schedule/
Book of abstracts (Riikka Puurunen, VTT, Twitter)
A bus load of ALD scientists from Helsinki heading for the Helsinki-Tartu flight. Last time (2002) they took the bus all the way to Tartu.
Tartu as viewed from the conference Hotel on Sunday afternoon (Irina Kärkkänen, Sentech)
Conference bag - must be the best looking bag ever in the History of ALD (Riikka Puurunen, VTT, Twitter)
The Russian ALD bag next to the Estonian ALD Bag below the VPHA Poster (Riikka Puurunen, VTT, Twitter)
The Russian ALD bag next to the Estonian ALD Bag below the VPHA Poster (Riikka Puurunen, VTT, Twitter)
Participant distribution - Finland on top followed by Estonia and Germany (Riikka Puuronen, VTT, Twitter)
View at the podium (Simon Rushworth, EpiValance, LinkedIn)
Modeling area-selective ALD, talk by Simon Elliott Tyndall (Riikka Puurunen, Twitter)
Timo Vähä-Ojala from Picosun talked about modelling of gas flow in ALD reactor (Tero Pilvi, Picosun)
Riikka Puurunen VTT - Mechanical property mapping of ALD thin films (Christoph Hossbach, TU-Dresden)
Timo Vähä-Ojala from Picosun talked about modelling of gas flow in ALD reactor (Tero Pilvi, Picosun)
Riikka Puurunen VTT - Mechanical property mapping of ALD thin films (Christoph Hossbach, TU-Dresden)
SOCIAL PROGRAM:
"Colours, colours! Physicum building at Tartu University" (Riikka Puurunen, VTT, Twitter)
Welcome Reception September 27, 2015
Conference Dinner September 28, 2015
"Conference dinner at AHHAA science centre was memorable with the pyro show, good food, music, and company" (Riikka Puurunen, VTT, Twitter)
Guided City Tours September, 29, 2015
SPONSORING
The conference venue showing the Exhibition area for a number of sponsoring companies: Armgate, Picosun, Oxford Instruments, Beneq, STREM Chemicals, SENTECH Instruments, Semilab, FAB Support.
Friday, September 25, 2015
Zinc based transistor demonstrated by Korea University and Samsung
As reported by American Institute of Physics - Researchers set speed records for zinc-based transistors with argon plasma process
Researchers at Korea University and the Samsung Advanced Institute of Technology have now developed a new type of thin film transistor that's significantly faster than its predecessors—an important step toward speeding up image display on devices like TVs and smartphone screens. The scientists made the transistor from zinc oxynitride, or ZnON, which they then plasma treated with argon gas.
More information: "Ar plasma treated ZnON transistor for future thin film electronics," by Eunha Lee, Teaho Kim, Anass Benayad, HeeGoo Kim, Sanghun Jeon and Gyeong-Sy Park, Applied Physics Letters on September 22, 2015. DOI: 10.1063/1.4930827
Powder Coating Industries Choose Picosun's ALD Solutions
Picosun Oy, leading supplier of Atomic Layer Deposition (ALD) thin film coating solutions for industrial manufacturing, reports delivery of multiple powder coating ALD systems to key production customers.
Picosun offers powder coating solutions for both industry and R&D. Our POCA™ 300 powder coating cartridge allows processing of large batches of materials and it can be directly integrated into the PICOSUN™ P-300 production-scale reactor frame. For smaller material volumes, our POCA™ 200 powder coating cartridge integrated into a PICOSUN™ R-series tool is a compact, versatile, and cost-efficient solution for top quality powder materials research. Picosun’s novel, innovative PICOVIBE™ feature improves the powder coating process even further by enhancing the distribution of the precursor vapors inside the powder batch, resulting in uniform film formation on every particle.
Surface modification of powder materials is a central requirement in various industry segments. Catalysts, novel battery materials, light-emitting phosphors, and medical substances are prime examples where Picosun's ALD technology enables completely new products or creates unparalleled added value to existing ones. Picosun's patented, highly successful POCA™ powder coating product family covers both research and pilot production tools and systems optimized for large scale batch manufacturing, all designed solely based on the requirements of the ALD method. All POCA™ systems can be equipped with Picosun's innovative Picovibe™ mechanism for optimal formation of highest quality ALD film throughout the batch.
"Staying constantly on the top of current and coming industrial trends is one of the cornerstones of Picosun's success. Functionalization of powder materials with ALD is one of our key application areas, and the market is huge. We are happy to see that the investment we have placed in development and optimization of our powder processing solutions now pays itself back in the form of repeat sales of our powder coating tools to our key industry customers, realizing their most advanced products in e.g. lighting device and medical industries," states Juhana Kostamo, Managing Director of Picosun.
"Staying constantly on the top of current and coming industrial trends is one of the cornerstones of Picosun's success. Functionalization of powder materials with ALD is one of our key application areas, and the market is huge. We are happy to see that the investment we have placed in development and optimization of our powder processing solutions now pays itself back in the form of repeat sales of our powder coating tools to our key industry customers, realizing their most advanced products in e.g. lighting device and medical industries," states Juhana Kostamo, Managing Director of Picosun.
Low temperature PEALD of SiN moisture permeation barrier layers from TU Eindhoven
This is really interesting! SiN is the fastest growing ALD film
application in leading edge CMOS - for CVD it is I guess the opposite
trend ;-) (originally posted by ALDPulse.com)
ACS Appl. Mater. Interfaces, Just Accepted Manuscript
DOI: 10.1021/acsami.5b06801
Publication Date (Web): September 22, 2015
Encapsulation of organic (opto-)electronic devices, such as organic light-emitting diodes (OLEDs), photovoltaic cells and field-effect transistors, is required to minimize device degradation induced by moisture and oxygen ingress. SiNx moisture permeation barriers have been fabricated using a very recently developed low temperature plasma-assisted atomic layer deposition (ALD), consisting of half-reactions of the substrate with the precursor SiH2(NHtBu)2 and with a N2-fed plasma. The deposited films have been characterized in terms of refractive index and chemical composition by spectroscopic ellipsometry (SE), X-ray photoelectron spectroscopy (XPS) and Fourier-transform infrared spectroscopy (FTIR), respectively. The SiNx thin film refractive index ranges from 1.80 to 1.90 for films deposited at 80 °C up to 200 °C, respectively, and the C, O and H impurity levels decrease when increasing the deposition temperature. The relative open porosity content of the layers has been studied by means of multi-solvent ellipsometric porosimetry (EP), adopting three solvents with different kinetic diameter: water (~ 0.3 nm), ethanol (~ 0.4 nm) and toluene (~ 0.6 nm). Irrespective of deposition temperature and hence impurity content in the SiNx films, no uptake of any adsorptive has been observed, pointing out the absence of open pores larger than 0.3 nm in diameter. Instead, multilayer development has been observed, leading to type II isotherms which, according to the IUPAC classification, are characteristic of non-porous layers. The calcium test has been performed in a climate chamber at 20 °C and 50% relative humidity to determine the intrinsic water vapor transmission rate (WVTR) of SiNx barriers deposited at 120 °C. Intrinsic WVTR values in the range of 10-6 g/m2/day indicate excellent barrier properties for ALD SiNx layers as thin as 10 nm, competing with the state-of-the-art plasma-enhanced chemical vapor deposited SiNx layers of a few hundreds nanometers- thick.
Low temperature plasma-assisted atomic layer deposition of silicon nitride moisture permeation barrier layers
Anne-Marije Andringa, Alberto Perrotta, Koen de Peuter, Harm C.M. Knoops, Wilhelmus M.M Kessels, and Mariadriana CreatoreACS Appl. Mater. Interfaces, Just Accepted Manuscript
DOI: 10.1021/acsami.5b06801
Publication Date (Web): September 22, 2015
Encapsulation of organic (opto-)electronic devices, such as organic light-emitting diodes (OLEDs), photovoltaic cells and field-effect transistors, is required to minimize device degradation induced by moisture and oxygen ingress. SiNx moisture permeation barriers have been fabricated using a very recently developed low temperature plasma-assisted atomic layer deposition (ALD), consisting of half-reactions of the substrate with the precursor SiH2(NHtBu)2 and with a N2-fed plasma. The deposited films have been characterized in terms of refractive index and chemical composition by spectroscopic ellipsometry (SE), X-ray photoelectron spectroscopy (XPS) and Fourier-transform infrared spectroscopy (FTIR), respectively. The SiNx thin film refractive index ranges from 1.80 to 1.90 for films deposited at 80 °C up to 200 °C, respectively, and the C, O and H impurity levels decrease when increasing the deposition temperature. The relative open porosity content of the layers has been studied by means of multi-solvent ellipsometric porosimetry (EP), adopting three solvents with different kinetic diameter: water (~ 0.3 nm), ethanol (~ 0.4 nm) and toluene (~ 0.6 nm). Irrespective of deposition temperature and hence impurity content in the SiNx films, no uptake of any adsorptive has been observed, pointing out the absence of open pores larger than 0.3 nm in diameter. Instead, multilayer development has been observed, leading to type II isotherms which, according to the IUPAC classification, are characteristic of non-porous layers. The calcium test has been performed in a climate chamber at 20 °C and 50% relative humidity to determine the intrinsic water vapor transmission rate (WVTR) of SiNx barriers deposited at 120 °C. Intrinsic WVTR values in the range of 10-6 g/m2/day indicate excellent barrier properties for ALD SiNx layers as thin as 10 nm, competing with the state-of-the-art plasma-enhanced chemical vapor deposited SiNx layers of a few hundreds nanometers- thick.
ALD Russia 2015 workshop: a travel report by Riikka Puurunen
The Atomic Layer Deposition Russia 2015 (“ALD Russia”, in short) workshop was organized by Moscow Institute of Physics and Technology (MIPT), in Dolgoprudny, Moscow region, on September 21-23, 2015. The chairman of the workshop was Anatoly Malygin from St. Petersburg Technological Institute; Dr. Andrey Zenkevich and Dr. Andrey Markeev from MIPT were in charge of the local organizing committee. The workshop was opened by the rector of MIPT, corresponding member of RAS, professor Nikolay Kudryavtsev. According to the organizers, 67 people were registered to attend the workshop.
Invited speakers at the workshop were: Anatoly Malygin (St. Petersburg Technological University, Russia), Steven M. George (University of Colorado at Boulder, USA), Gregory N. Parsons (Carolina State University, USA), Riikka Puurunen (VTT Technical Research Centre of Finland), Annelies Delabie (IMEC, Belgium), Hyungjun Kim (Yonsei University, Korea), Cheol Seong Hwang (Seoul National University, Korea), Robert M. Wallace (University of Texas at Dallas, USA), Andrey Markeev (Moscow Institute of Physics and Technology, Russia), Sabina Spiga (Laboratorio MDM, IMM-CNR, Italy), Andrey Zenkevich/Yury Matveev (Moscow Institute of Physics and Technology, Russia), Vladimir Gritsenko (A. V. Rzhanov Institute of Semiconductor Physics of SB RAS, Russia), Ingo Dirnstorfer (NaMLab, Germany), Vladislav Vasilyev (Novosibirsk State Technical University and SibIS LCC, Russia), Giovanna Scarel (James Madison University, USA), Erwin Kessels (Eindhoven University of Technology, The Netherlands), Sean Barry (Carleton University, Canada), Svetlana Dorovskikh (A. V. Nikolaev Institute of Inorganic Chemistry SB RAS), and Evgeny Gornev (Mikron, Russia).
From left: Puurunen, Malygin, Parsons. Photographer: Abdulagatov (Riikka Puurunen, Twitter)
Invited speakers at the workshop were: Anatoly Malygin (St. Petersburg Technological University, Russia), Steven M. George (University of Colorado at Boulder, USA), Gregory N. Parsons (Carolina State University, USA), Riikka Puurunen (VTT Technical Research Centre of Finland), Annelies Delabie (IMEC, Belgium), Hyungjun Kim (Yonsei University, Korea), Cheol Seong Hwang (Seoul National University, Korea), Robert M. Wallace (University of Texas at Dallas, USA), Andrey Markeev (Moscow Institute of Physics and Technology, Russia), Sabina Spiga (Laboratorio MDM, IMM-CNR, Italy), Andrey Zenkevich/Yury Matveev (Moscow Institute of Physics and Technology, Russia), Vladimir Gritsenko (A. V. Rzhanov Institute of Semiconductor Physics of SB RAS, Russia), Ingo Dirnstorfer (NaMLab, Germany), Vladislav Vasilyev (Novosibirsk State Technical University and SibIS LCC, Russia), Giovanna Scarel (James Madison University, USA), Erwin Kessels (Eindhoven University of Technology, The Netherlands), Sean Barry (Carleton University, Canada), Svetlana Dorovskikh (A. V. Nikolaev Institute of Inorganic Chemistry SB RAS), and Evgeny Gornev (Mikron, Russia).
The scientific programme of the workshop was a balanced mixture of various subject areas, for example, ALD/PEALD precursor and process development, atomic layer etching, 2D materials, semiconductor applications, and thin film conformality analysis. Some truly futuristic talks were included in the programme, e.g. related to neural networks with ALD-grown memristors. There were also two talks that looked backwards in time: one on the historical developments of ALD under the name Molecular Layering in USSR/Russia; and one describing the organization of the on-going Virtual Project on the History of ALD (VPHA), a volunteer-based project where new participants are welcome and needed.
The non-scientific programme at the workshop consisted of a Moscow river cruise on Tuesday evening. The participants were transported with a bus from Dolgoprudny (through the well-known traffic jam of Moscow) to the centre of the city. With the private boat accompanied with a guide, the participants travelled along the Moskva river for about five hours, passing places such as Tretjagovskii Gallery, Kreml and the Red Square, and seeing also the statue of Peter the Great. At the boat, food was excellent and plenty. Many discussions were carried out in a forward-looking, pleasant sphere, and new connections made.
At the end of the workshop, the participants had a chance to visit the laboratories at MIPT.
As specified at the website http://ald-conf.ru/, the goal of the workshop was to “consolidate the rapidly growing Russian ALD community, and to bring Russian researchers closer to leading international experts in the field.” In my view, this target was met: many leading scientists from Russia, several European countries, USA, Canada and Korea got together at the workshop, interacted during presentations, and enjoyed each other’s company at the social event.
With this travel report, I want to thank the organizers at MIPT for creating this unique event. I also express my thanks to Gregory Parsons, who had come up with the idea that this kind of a workshop should be organized, and to Giovanna Scarel, who thereafter advanced this idea with her long-term collaborators at MIPT. While this meeting was not directly related to the ongoing ALD history project VPHA, it is evident that the VPHA has ripened the time for this type of workshop to happen.
This workshop was the first of its kind. The organizers envisioned that there will be continuation in one way or another --- how exactly, is left for the future to show. My hope is that the international ALD community could once meet in St. Petersburg, where ALD research has been carried out already over fifty years.
The non-scientific programme at the workshop consisted of a Moscow river cruise on Tuesday evening. The participants were transported with a bus from Dolgoprudny (through the well-known traffic jam of Moscow) to the centre of the city. With the private boat accompanied with a guide, the participants travelled along the Moskva river for about five hours, passing places such as Tretjagovskii Gallery, Kreml and the Red Square, and seeing also the statue of Peter the Great. At the boat, food was excellent and plenty. Many discussions were carried out in a forward-looking, pleasant sphere, and new connections made.
At the end of the workshop, the participants had a chance to visit the laboratories at MIPT.
As specified at the website http://ald-conf.ru/, the goal of the workshop was to “consolidate the rapidly growing Russian ALD community, and to bring Russian researchers closer to leading international experts in the field.” In my view, this target was met: many leading scientists from Russia, several European countries, USA, Canada and Korea got together at the workshop, interacted during presentations, and enjoyed each other’s company at the social event.
With this travel report, I want to thank the organizers at MIPT for creating this unique event. I also express my thanks to Gregory Parsons, who had come up with the idea that this kind of a workshop should be organized, and to Giovanna Scarel, who thereafter advanced this idea with her long-term collaborators at MIPT. While this meeting was not directly related to the ongoing ALD history project VPHA, it is evident that the VPHA has ripened the time for this type of workshop to happen.
This workshop was the first of its kind. The organizers envisioned that there will be continuation in one way or another --- how exactly, is left for the future to show. My hope is that the international ALD community could once meet in St. Petersburg, where ALD research has been carried out already over fifty years.
Espoo, September 25, 2015
Riikka Puurunen
Senior Scientist, VTT Technical Research Centre of Finland
Coordinator of the Virtual Project on the History of ALD (VPHA)
- The slides of the talk related to Virtual Project on the History of ALD can be found through the VPHA webpage, see http://vph-ald.com/ALD-history-publications.html (direct link here). The slides of the ML-ALD talk should appear at the same VPHA website in the near future. The goal of the organizers was also to later collect and share the slides presented at the workshop through the workshop website http://ald-conf.ru/.
- In Twitter, the workshop became known with hashtag #ALDRussia.
- The BALDengineering photo collection from the workshop can be found at http://baldengineering.blogspot.com/2015/09/photo-show-from-international-workshop.html
Monday, September 21, 2015
UPDATE: Photo Show from the International workshop ALD Russia 2015
The now ongoing ALD 2015 in Moscow Russia, 21-23 Septmber 2015, has quite an impressive line up of invited speakers. Here all photos that appear in social media will be collected and you are also welcome to send via e-mail directly to me (jonas.sundqvist@baldengineering.com)
In the meantime many excellent pictures from the organizers have become available here: https://www.flickr.com/photos/miptpix/sets/72157656594919343
In the meantime many excellent pictures from the organizers have become available here: https://www.flickr.com/photos/miptpix/sets/72157656594919343
ALD Russia 2015 is held in the BioPharmCluster building of MIPT
BioPharmCluster building of MIPT (Dmitry Suyatin, Lund Nano Lab)
From left: Puurunen, Malygin, Parsons. Photographer: Abdulagatov (Riikka Puurunen, Twitter)
Riikka Puurunen and Sean Barry (Twitter)
Scarel and Puurunen in front of the conference venue in Dolgoprudny (Riikka Puurunen, VTT, Twitter)
Moskva river cruise (Dmitry Suyatin, Lund Nano Lab)
Moskva river cruise (Dmitry Suyatin, Lund Nano Lab)
Moskva river cruise (Dmitry Suyatin, Lund Nano Lab)
Moskva river cruise (Dmitry Suyatin, Lund Nano Lab)
Moskva river cruise (Dmitry Suyatin, Lund Nano Lab)
Moskva river cruise (Dmitry Suyatin, Lund Nano Lab)
Moskva river cruise (Dmitry Suyatin, Lund Nano Lab)
Moskva river cruise (Riikka Puurunen, VTT, Twitter)
Moskva river cruise (Sean Barry, Barry Lab, Twitter)
Flower Power car (Dmitry Suyatin, Lund Nano Lab)
Handbook of Silicon Based MEMS Materials and Technologies with ALD Chapter
"A comprehensive, well-proven reference work on state-of-the-art MEMS materials, technologies and manufacturing, emphasizing current and future applications" with an ALD Chapter by Riikka Puurunen and Matti Putkonen.
Handbook of Silicon Based MEMS Materials and Technologies, 2nd Edition
Editor(s) : Lindroos, Motooka, Franssila, Paulasto-Krockel, Tilli & Airaksinen
Expected Release Date:05 Nov 2015
Imprint:William Andrew
Print Book ISBN :9780323299657
eBook ISBN :9780323312233
Expected Release Date:05 Nov 2015
Imprint:William Andrew
Print Book ISBN :9780323299657
eBook ISBN :9780323312233
Friday, September 18, 2015
Woah! Check out this ALD Chamber manufacured by Applied Vacuum Technology for University of Colorado’s
Woah! Check out this ALD Chamber manufacured by Applied Vacuum Technology, LLC
for Andrew Cavanaugh at Boulder Colorado in the famous S.M. Georges
group.
"A special project directed by senior research associate, Andrew Cavanaugh, required a vacuum chamber 9 feet in length, numerous side ports with critical alignment, sufficient rigidity to maintain locational tolerances during process, and precisely aligned rail system for trolley that moved back-and-forth inside the chamber. Applied Vacuum Technology and its parent company, Anderson-Dahlen, collaborated to provide engineering and fabrication support for this custom vacuum chamber which Cavanaugh needed in order to carry out his ALD research"
Full story here: Custom Vacuum Chamber Used in Atomic Layer Deposition Research at University of Colorado’s S.M. George Research Group
UPDATE: Symposium of The ALD Lab Dresden at SEMICON Europa
Symposium of the ALD-LabWorkshop on Atomic Layer Processing
Date: 6 October 2015
Time: 09:00 - 15:10
Location: Room Columbus, Messe Dresden
| ||
Looking
back in the evolution of IC technology, it can be stated that from the
0.25µm node on, the key for further shrinking was planarization. This
was enabled by the introduction of an emerging technology, the CMP.
Since the 28 nm node it can be observed that, at least in the front end
of line, starting with the FinFET and possibly continuing with the
surrounding gate transistor, the required structures become more and
more three dimensional, while the thickness of the associated films
become extremely thin (gate dielectric, work function layer, barrier
layer). The emerging technology enabling this is Atomic Layer Deposition
(ALD).
| ||
ALD
is based on self limiting heterogeneous chemical reactions which allow
the fabrication of very thin (sub nm to few nm) layers with high
accuracy (basically atomic layer precision), extremely well conformality
and intrinsically high uniformity even in batch tools. Although the
scientific background of ALD goes far back in history, ALD for
semiconductor processing can still be considered as a novel technology.
Progress in ALD is associated with tools, but even more with specifically designed precursors which need to be applied at optimum conditions of the gas feed system, the process chamber and the substrate condition. Our workshop, which is organized by the “ALD Lab Dresden” wants to stimulate discussions between developers of tools, consumables, as well as applicants of this exciting technology. The self limiting behavior of the heterogeneous reaction can however also be used to remove material from a substrate in an extremely controlled fashion of atomic dimensions. This process, that can be viewed as the complement to ALD is called Atomic Layer Etching (ALEt). As for ALD also ALEt can be a game changer for the semiconductor industry utilizing surface functionalization and modification similar to those we know in ALD and resulting in a chemistry-based material removal on the same atomic level as in ALD – A layer by layer removal. In general scaling is thought about to be a shrink in the critical dimensions (CD, pitch) in the latheral xy-plane, today scaling is also taking place in the z-direction, i.e., a reduction in the thickness of the film stacks like the High-k Metal Gate stack. This has resulted in that the thicknesses of the film stacks of devices today are now routinely approaching <20 Å nm providing an opportunity for slow and precise etching by ALEt. We hope that this new part of the ALD Lab Dresden Symposium will allow for increased scientific and technological discussion for enabling ALEt and learning from ALD and related plasma based processing techniques like Plasma CVD and Reactive Ion Etching. | ||
AGENDA | ||
Tuesday, 6 October 2015 | ||
09:00 | Welcome | Organized by: |
Prof. Johann W. Bartha, TU Dresden | ||
09:15 | In situ monitoring of Atomic Layer Deposition in porous materials | |
Martin Knaut, TU Dresden | ||
09:40 | Passivation of MEMS by Atomic Layer Deposition | |
Matthias Schwille, Robert Bosch | ||
10:05 | Growth Monitoring by XPS and LEIS Investigations of Ultrathin Copper Films Deposited by Atomic Layer Deposition | |
Dileep Dhakal, TU Chemnitz/FhG ENAS | ||
10:30 | High-k dielectrics by ALD for BEOL compatible MIM | |
Wenke Weinreich, FhG IPMS-CNT | ||
10:55 | ALD coatings for applications as permeation barrier and protective layer in fiber-reinforced materials | |
Mario Krug, FhG IKTS | ||
11:20 | ALD for solar cell application | |
Ingo Dirnstorfer, NaMLab | ||
11:45 | Plasma enhanced ALD process for TiO2- and WO3- films | |
Alexander Strobel, FH Zwickau | ||
12:10 | Lunch Break (Conversation, Networking, Finger food) | |
13:00 | Why do we need Atomic Layer Etching | |
Jonas Sundqvist, Lund University/TU Dresden | ||
13:25 | Spatial Atomic Layer Deposition and Atomic Layer Etching | |
Prof. Fred Roozeboom, / TNO Eindhoven | ||
13:50 | Atomic Layer Etching: What Can We Learn from Atomic Layer Deposition? | |
Harm Knoops, Oxford Instruments/TU Eindhoven | ||
14:15 | Hardmask and side wall protection during dry etching with plasma enhanced deposition during dry etching for ALE purposes | |
Stephan Wege, Plasway | ||
14:40 | Industrial High Throughput Atomic Layer Deposition Equipment and Process for OLED Encapsulation | |
Jacques Kools, Encapsulix | ||
15:05 | Closing Remarks / Wrap Up | |
Prof. Johann W. Bartha, TU Dresden | ||
15:10 | End | |
Registration
No pre-registration required but you must register as a visitor, in order to gain access to the venue:
Thursday, September 17, 2015
The ALD Boom - ALD Market Heats Up
ALD Market Heats Up - You bet! Here is an interesting piece by Mark Lapedus on the ALD Boom and it makes you wonder why Applied Materials has waited so long in taking on this market, which they have done now by the introduction of the Olympia Fast ALD / Spatial ALD platform. Many says that it has to do with certain IP ending in 2016. One missing point here though is that Kokusai is not included in the market share estimation for 2014 since they are a ALD top 5 or even top 3 company.
Number of applications for technology increase, and so do the number of companies vying for a piece of the growing market.
SEPTEMBER 17TH, 2015 - BY: MARK LAPEDUS
Amid the shift to 3D NAND, finFETs and other device architectures, the atomic layer deposition (ALD) market is heating up on several fronts.
Applied Materials, for example, recently moved to shakeup the landscape by rolling out a new, high-throughput ALD tool. Generally, ALD is a process that deposits materials layer-by-layer at the atomic level, enabling thin and conformal films on devices.
Meanwhile, ASM International, Lam Research, Tokyo Electron (TEL), Ultratech and others are also stepping up their efforts in ALD, and for good reason: the applications are rapidly expanding for ALD.
Traditionally, ALD has been used for DRAM capacitor and high-k applications. Now, toolmakers are chasing after some relatively new and sizable ALD markets, namely 3D NAND and multi-patterning for advanced logic. Other emerging ALD markets include fin doping, interconnects,ReRAMs and selective deposition.
“ALD has become more important for chip production,” said Han Jin Lim, an ALD expert and a technical member at Samsung Semiconductor’s R&D Center. “As the structure of a chip becomes more complicated, thinner and more conformal films are required. The quality of the films (must also be) maintained. ALD is the best methodology to achieve them.”
In 2014, ASMI was the leader in the ALD tool market with a 53% share, followed in order by TEL (27%), Jusung (6%), Lam Research (5%), Wonik IPS (5%) and Aixtron (2%), Freeman said.
Full story at Semiconductor engineering : http://semiengineering.com/ald-market-heats-up/
Berkeley Lab can characterize individual defects inside a bulk insulator using STM and graphene
I am curious if this technique could be adopted to be used to study defects in metal oxides like ZrO2, HfO2, SrTiO3 etc. in devices like HKMG transistors, Resistive RAM and Ferroelectric (FRAM, FeFET) memory cells.
As reported by Berkeley Lab : Nanoscale defects are enormously important in shaping the electrical, optical, and mechanical properties of a material. For example, a defect may donate charge or scatter electrons moving from one point to another. However, observing individual defects in bulk insulators, a ubiquitous and essential component to almost all devices, has remained elusive: it’s far easier to image the detailed electrical structure of conductors than insulators.
(a) STM topographic image of a clean graphene/BN area (b) dI/dV map acquired simultaneously with (a) exhibits new features including bright dots, a dark dot and a ring.
Now, Berkeley Lab researchers have demonstrated a new method that can be applied to study individual defects in a widely used bulk insulating material, hexagonal boron nitride (h-BN), by employing scanning tunneling microscopy (STM).
“Normally, STM is used to study conductors and cannot be used to study bulk insulators, since electrical current does not typically flow through an insulator,” explains Mike Crommie, physicist at Berkeley Lab’s Materials Sciences Division and professor at UC Berkeley, in whose lab this work was conducted. His team overcame this obstacle by capping the h-BN with a single sheet of grapheme.
Dresden Memory Startup To Debut At Semicon Europa
EETimes reports : A startup company that is working on a ferroelectric non-volatile memory technology based on hafnium oxide is set to make its debut at the Semicon Europa exhibition taking place in Dresden, Germany, October 6 to 8.
The company is in the process of being spun out from the nano- and micro- laboratory (NaMLab) at the Technical University of Dresden. It is currently listed as The Ferroelectric Memory Company (FMC) although CEO Stefan Mueller told EE Times Europe said that the name may change during the formal company creation and registration process.
The company is the product of work at NaMLab on the ferroelectric effect in thin films of silicon-doped hafnium dioxide. That work was, in turn, based on a discovery made in research at now defunct DRAM manufacturer Qimonda in 2007 by Tim Boeske that hafnium dioxide, if prepared in the right way could be made to demonstrate a ferroelectric effect. Hafnium oxide is well known as an insulator material used for high-k metal-gate (HKMG) transistor structures.
The company is in the process of being spun out from the nano- and micro- laboratory (NaMLab) at the Technical University of Dresden. It is currently listed as The Ferroelectric Memory Company (FMC) although CEO Stefan Mueller told EE Times Europe said that the name may change during the formal company creation and registration process.
The company is the product of work at NaMLab on the ferroelectric effect in thin films of silicon-doped hafnium dioxide. That work was, in turn, based on a discovery made in research at now defunct DRAM manufacturer Qimonda in 2007 by Tim Boeske that hafnium dioxide, if prepared in the right way could be made to demonstrate a ferroelectric effect. Hafnium oxide is well known as an insulator material used for high-k metal-gate (HKMG) transistor structures.
TEM of FeFET
processed in 28 nm high-k metal gate CMOS Technology (left) and 2D
TCAD-model for device simulation (right). (Picture from NaMLab)
FMC has been formed by NaMLab to commercialize the work and has taken over a publicly-funded program that will provide €500,000 (about $565,000) to cover development over the period April 2015 to September 2016. Meanwhile the small group of engineers that have formed the company are looking for early-stage investment and potential partners, Mueller said.
Full story at EETimes : http://www.eetimes.com/document.asp?doc_id=1327699&page_number=1
Earlier blog posts : http://baldengineering.blogspot.de/2015/07/the-ferroelectric-memory-company-fcm.html
Wednesday, September 16, 2015
ALD of Co9S8 and Its Application for Supercapacitors
Vapor-Phase Atomic Layer Deposition of Co9S8 and Its Application for Supercapacitors
Hao Li, Yuanhong Gao, Youdong Shao, Yantao Su, and Xinwei Wang
School of Advanced Materials, Shenzhen Graduate School, Peking University, Shenzhen 518055, China
Nano Lett., Article ASAP
Publication Date (Web): August 27, 2015
Atomic layer deposition (ALD) of cobalt sulfide (Co9S8) is reported. The deposition process uses bis(N,N′-diisopropylacetamidinato)cobalt(II) and H2S as the reactants and is able to produce high-quality Co9S8 films with an ideal layer-by-layer ALD growth behavior. The Co9S8films can also be conformally deposited into deep narrow trenches with aspect ratio of 10:1, which demonstrates the high promise of this ALD process for conformally coating Co9S8 on high-aspect-ratio 3D nanostructures. As Co9S8 is a highly promising electrochemical active material for energy devices, we further explore its electrochemical performance by depositing Co9S8 on porous nickel foams for supercapacitor electrodes. Benefited from the merits of ALD for making high-quality uniform thin films, the ALD-prepared electrodes exhibit remarkable electrochemical performance, with high specific capacitance, great rate performance, and long-term cyclibility, which highlights the broad and promising applications of this ALD process for energy-related electrochemical devices, as well as for fabricating complex 3D nanodevices in general.
Surface Chemistry of Copper Metal and Copper Oxide ALD
To produce continuous non-island forming films of copper by ALD is extremely difficult. Here is a good article from Fraunhofer ENAS in Chemnitz, Germany, on the mechanism behind ALD of Copper and coper oxide using the rather well studied Cu(acac)2 precursor but not so easy process.
Surface Chemistry of Copper Metal and Copper Oxide Atomic Layer Deposition from Copper(II) Acetylacetonate: A Combined First-Principles and Reactive Molecular Dynamics Study
(Physical Chemistry Chemical Physics) Monday September 14th 2015Author(s): Xiao Hu, Joerg Schuster, Stefan Schulz, Thomas Gessner
DOI:10.1039/C5CP03707G
Atomistic mechanisms for the atomic layer deposition using the Cu(acac)2 (acac = acetylacetonate) precursor are studied by first-principles calculations and reactive molecular dynamics simulations. The results show that Cu(acac)2 chemisorbs on the hollow site of the Cu(110) surface and decomposes easily into a Cu atom and the acac-ligands. A sequential dissociation and reduction of the Cu precursor [Cu(acac)2→Cu(acac)→Cu] is observed. Further decomposition of the acac-ligand is unfavorable on the Cu surface. Thus additional adsorption of the precursors may be blocked by adsorbed ligands. Molecular hydrogen is found to be nonreactive towards Cu(acac)2 on Cu(110), whereas individual H atoms easily lead to bond breaking in the Cu precursor upon impact, and thus release the surface ligands into the gas-phase. On the other hand, water reacts with Cu(acac)2 on a Cu2O substrate through a ligand-exchange reaction, which produces gaseous H(acac) and surface OH species. Combustion reactions with the main by-products CO2 and H2O are observed during the reaction between Cu(acac)2 and ozone on CuO surface. The reactivity of different co-reactants toward Cu(acac)2 follows the order H > O3 > H2O.
Monday, September 14, 2015
New Record for Next-Generation Solar Cells to be Presented by Imec at EU PVSEC 2015
New Record Achievements on Next-Generation Solar Cells and Smart Solar Modules to be Presented at EU PVSEC 2015
EU PVSEC 2015 – Sept. 14, 2015 – At this week’s European PV Solar Energy Conference and Exhibition (EU PVSEC) nano-electronics research center imec will present achievements covering the broad spectrum of imec’s comprehensive photovoltaic-related research. Imec’s scientists and researchers will present its latest results in n-PERT solar cells, perovskite solar cell technology and its emerging PV energy yield prediction modeling.
Presenting a total of 19 papers, 12 of which are oral presentations, imec will highlight its new record conversion efficiency of 22.5 percent for a six inch n-PERT solar cell, resulting from material and architectural optimizations. N-type silicon solar cells are considered as promising next-generation alternatives to p-type solar cells thanks to their ability to withstand light-induced degradation, and higher tolerance to common metal impurities and high diffusion lengths.
In another presentation at EU PVSEC, imec’s perovskite solar cell, which has been further improved to reach new highest conversion efficiencies of 17 percent, will also be featured. Integrated into a module, a 12.5 percent record module efficiency was demonstrated, further validating that organometal halide perovskites are a promising material for thin-film solar applications.
An emerging research focus at imec is on PV energy yield predictions. In order to optimize the energy yield production of the smart grid, we need accurate predictions of the output of solar power plants in variable weather conditions. This information can be used to stabilize the grid, and to develop smart PV modules that react to the environment to optimize their energy generation yield. Therefore, imec has developed a simulation model that combines imec’s in-depth knowledge of solar cell technology with short term weather predictions. At the conference, imec will present promising modeling results that predict energy yield from solar panels under non-homogeneous irradiation, including e.g. the effects of temperature gradients resulting from wind, with an accuracy that is 20 percent better than the current models.
“The combination of talented scientists, a unique environment for R&D, and the drive of our industrial partners to focus on innovation, underscores imec’s prominent presence at EU PVSEC,” commented Jef Poortmans, Scientific Director of PV at imec. “Imec continues to push the boundaries of PV innovation beyond cell technology towards modeling and system aspects. We invite industrial companies to join us in this endeavor.”
In another presentation at EU PVSEC, imec’s perovskite solar cell, which has been further improved to reach new highest conversion efficiencies of 17 percent, will also be featured. Integrated into a module, a 12.5 percent record module efficiency was demonstrated, further validating that organometal halide perovskites are a promising material for thin-film solar applications.
An emerging research focus at imec is on PV energy yield predictions. In order to optimize the energy yield production of the smart grid, we need accurate predictions of the output of solar power plants in variable weather conditions. This information can be used to stabilize the grid, and to develop smart PV modules that react to the environment to optimize their energy generation yield. Therefore, imec has developed a simulation model that combines imec’s in-depth knowledge of solar cell technology with short term weather predictions. At the conference, imec will present promising modeling results that predict energy yield from solar panels under non-homogeneous irradiation, including e.g. the effects of temperature gradients resulting from wind, with an accuracy that is 20 percent better than the current models.
“The combination of talented scientists, a unique environment for R&D, and the drive of our industrial partners to focus on innovation, underscores imec’s prominent presence at EU PVSEC,” commented Jef Poortmans, Scientific Director of PV at imec. “Imec continues to push the boundaries of PV innovation beyond cell technology towards modeling and system aspects. We invite industrial companies to join us in this endeavor.”
New ALD Book, Atomic Layer Deposition (ALD): Fundamentals, Characteristics and Industrial Applications
Here is a new ALD book edited by Jeannie Valdez Atomic Layer Deposition (ALD): Fundamentals, Characteristics and Industrial Applications to be published by Nova in the 4th quarter 2015.
Editors: Jeannie Valdez
Book Description:
Atomic layer deposition (ALD) is a thin film deposition technique used in the mass production of microelectronics. In this book, novel nonvolatile memory devices are discussed. The chapters examine the low-temperature fabrication process of single-crystal platinum non-thin films using plasma-enhanced atomic layer deposition (PEALD). A comprehensive review of ALD surface coatings for battery systems is provided, as well as a theoretical calculation on the mechanism of thermal and plasma-enhanced atomic layer deposition of SiO2; and fluorine doping behavior in Zn-based conducting oxide film grown by ALD. (Imprint: Nova)
Chapter 1
Atomic Layer Deposition for Novel Nonvolatile Memory Devices
(Ai-Dong Li, Department of Materials Science and Engineering, College of Engineering and Applied Sciences, National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, P. R. China)
Chapter 2
Platinum Nano- Thin Film for Plasmonic Photocatalytic Reaction
(Hung Ji Huang and Bo-Heng Liu, Instrument Technology Research Center, National Applied Research Laboratories, Taiwan)
Chapter 3
Atomic Layer Deposition of Sub-Nano to Nanoscale Surface Coatings for Next-Generation Advanced Battery Systems
(Xiangbo Meng and Jeffrey W. Elam, Energy Systems Division, Argonne National Laboratory, Argonne, Illinois, USA)
Chapter 4
Theoretical Calculation on Mechanism of Thermal and Plasma-Enhanced Atomic Layer Deposition of SiO2
(Guo-Yong Fang, Li-Na Xu and Ai-Dong Li, National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China)
Chapter 5
Fluorine Doping Behavior in Zn-Based Conducting Oxide Film Grown by Atomic Layer Deposition
(Hyung-Ho Park, Young-June Choi and Kyung-Mun Kang, Department of Materials Science and Engineering, Yonsei University, Seoul, Korea)
Index
Series:
Chemical Engineering Methods and Technology
Binding: Hardcover
Pub. Date: 2015 - 4th Quarter
Pages: 7x10 - (NBC-R)
ISBN: 978-1-63483-869-6
Status: AN
Editors: Jeannie Valdez
Book Description:
Atomic layer deposition (ALD) is a thin film deposition technique used in the mass production of microelectronics. In this book, novel nonvolatile memory devices are discussed. The chapters examine the low-temperature fabrication process of single-crystal platinum non-thin films using plasma-enhanced atomic layer deposition (PEALD). A comprehensive review of ALD surface coatings for battery systems is provided, as well as a theoretical calculation on the mechanism of thermal and plasma-enhanced atomic layer deposition of SiO2; and fluorine doping behavior in Zn-based conducting oxide film grown by ALD. (Imprint: Nova)
Table of Contents:
PrefaceChapter 1
Atomic Layer Deposition for Novel Nonvolatile Memory Devices
(Ai-Dong Li, Department of Materials Science and Engineering, College of Engineering and Applied Sciences, National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, P. R. China)
Chapter 2
Platinum Nano- Thin Film for Plasmonic Photocatalytic Reaction
(Hung Ji Huang and Bo-Heng Liu, Instrument Technology Research Center, National Applied Research Laboratories, Taiwan)
Chapter 3
Atomic Layer Deposition of Sub-Nano to Nanoscale Surface Coatings for Next-Generation Advanced Battery Systems
(Xiangbo Meng and Jeffrey W. Elam, Energy Systems Division, Argonne National Laboratory, Argonne, Illinois, USA)
Chapter 4
Theoretical Calculation on Mechanism of Thermal and Plasma-Enhanced Atomic Layer Deposition of SiO2
(Guo-Yong Fang, Li-Na Xu and Ai-Dong Li, National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China)
Chapter 5
Fluorine Doping Behavior in Zn-Based Conducting Oxide Film Grown by Atomic Layer Deposition
(Hyung-Ho Park, Young-June Choi and Kyung-Mun Kang, Department of Materials Science and Engineering, Yonsei University, Seoul, Korea)
Index
Series:
Chemical Engineering Methods and Technology
Binding: Hardcover
Pub. Date: 2015 - 4th Quarter
Pages: 7x10 - (NBC-R)
ISBN: 978-1-63483-869-6
Status: AN
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