Thursday, September 17, 2015

Dresden Memory Startup To Debut At Semicon Europa

EETimes reports : A startup company that is working on a ferroelectric non-volatile memory technology based on hafnium oxide is set to make its debut at the Semicon Europa exhibition taking place in Dresden, Germany, October 6 to 8.

The company is in the process of being spun out from the nano- and micro- laboratory (NaMLab) at the Technical University of Dresden. It is currently listed as The Ferroelectric Memory Company (FMC) although CEO Stefan Mueller told EE Times Europe said that the name may change during the formal company creation and registration process.

The company is the product of work at NaMLab on the ferroelectric effect in thin films of silicon-doped hafnium dioxide. That work was, in turn, based on a discovery made in research at now defunct DRAM manufacturer Qimonda in 2007 by Tim Boeske that hafnium dioxide, if prepared in the right way could be made to demonstrate a ferroelectric effect. Hafnium oxide is well known as an insulator material used for high-k metal-gate (HKMG) transistor structures. 
TEM of FeFET processed in 28 nm high-k metal gate CMOS Technology (left) and 2D TCAD-model for device simulation (right). (Picture from NaMLab)

FMC has been formed by NaMLab to commercialize the work and has taken over a publicly-funded program that will provide €500,000 (about $565,000) to cover development over the period April 2015 to September 2016. Meanwhile the small group of engineers that have formed the company are looking for early-stage investment and potential partners, Mueller said.

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