Friday, September 25, 2015

Zinc based transistor demonstrated by Korea University and Samsung



As reported by American Institute of Physics - Researchers set speed records for zinc-based transistors with argon plasma process



Researchers set speed records for zinc-based transistors with argon plasma process 
 


A cross-sectional high angle annular dark field scanning transmission electron microscopy (HAADF-STEM) image and nanobeam diffraction pattern of Ar plasma treated ZnON. Credit: E. Lee & S. Jeon/Samsung Advanced Institute of Technology & Korea University

Researchers at Korea University and the Samsung Advanced Institute of Technology have now developed a new type of thin film transistor that's significantly faster than its predecessors—an important step toward speeding up image display on devices like TVs and smartphone screens. The scientists made the transistor from zinc oxynitride, or ZnON, which they then plasma treated with argon gas.

More information: "Ar plasma treated ZnON transistor for future thin film electronics," by Eunha Lee, Teaho Kim, Anass Benayad, HeeGoo Kim, Sanghun Jeon and Gyeong-Sy Park, Applied Physics Letters on September 22, 2015. DOI: 10.1063/1.4930827