Monday, September 14, 2015

New ALD Book, Atomic Layer Deposition (ALD): Fundamentals, Characteristics and Industrial Applications

Here is a new ALD book edited by Jeannie Valdez Atomic Layer Deposition (ALD): Fundamentals, Characteristics and Industrial Applications to be published by Nova in the 4th quarter 2015.


Editors: Jeannie Valdez
Book Description:
Atomic layer deposition (ALD) is a thin film deposition technique used in the mass production of microelectronics. In this book, novel nonvolatile memory devices are discussed. The chapters examine the low-temperature fabrication process of single-crystal platinum non-thin films using plasma-enhanced atomic layer deposition (PEALD). A comprehensive review of ALD surface coatings for battery systems is provided, as well as a theoretical calculation on the mechanism of thermal and plasma-enhanced atomic layer deposition of SiO2; and fluorine doping behavior in Zn-based conducting oxide film grown by ALD. (Imprint: Nova)

Table of Contents:

Preface

Chapter 1

Atomic Layer Deposition for Novel Nonvolatile Memory Devices
(Ai-Dong Li, Department of Materials Science and Engineering, College of Engineering and Applied Sciences, National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, P. R. China)

Chapter 2
Platinum Nano- Thin Film for Plasmonic Photocatalytic Reaction
(Hung Ji Huang and Bo-Heng Liu, Instrument Technology Research Center, National Applied Research Laboratories, Taiwan)

Chapter 3
Atomic Layer Deposition of Sub-Nano to Nanoscale Surface Coatings for Next-Generation Advanced Battery Systems
(Xiangbo Meng and Jeffrey W. Elam, Energy Systems Division, Argonne National Laboratory, Argonne, Illinois, USA)

Chapter 4
Theoretical Calculation on Mechanism of Thermal and Plasma-Enhanced Atomic Layer Deposition of SiO2
(Guo-Yong Fang, Li-Na Xu and Ai-Dong Li, National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China)

Chapter 5
Fluorine Doping Behavior in Zn-Based Conducting Oxide Film Grown by Atomic Layer Deposition
(Hyung-Ho Park, Young-June Choi and Kyung-Mun Kang, Department of Materials Science and Engineering, Yonsei University, Seoul, Korea)

Index
Series:
Chemical Engineering Methods and Technology
Binding: Hardcover
Pub. Date: 2015 - 4th Quarter
Pages: 7x10 - (NBC-R)
ISBN: 978-1-63483-869-6
Status: AN