Friday, September 18, 2015

UPDATE: Symposium of The ALD Lab Dresden at SEMICON Europa

Symposium of the ALD-Lab

Workshop on Atomic Layer Processing

Date: 6 October 2015
Time: 09:00 - 15:10
Location: Room Columbus, Messe Dresden

Looking back in the evolution of IC technology, it can be stated that from the 0.25µm node on, the key for further shrinking was planarization. This was enabled by the introduction of an emerging technology, the CMP. Since the 28 nm node it can be observed that, at least in the front end of line, starting with the FinFET and possibly continuing with the surrounding gate transistor, the required structures become more and more three dimensional, while the thickness of the associated films become extremely thin (gate dielectric, work function layer, barrier layer). The emerging technology enabling this is Atomic Layer Deposition (ALD).
ALD is based on self limiting heterogeneous chemical reactions which allow the fabrication of very thin (sub nm to few nm) layers with high accuracy (basically atomic layer precision), extremely well conformality and intrinsically high uniformity even in batch tools. Although the scientific background of ALD goes far back in history, ALD for semiconductor processing can still be considered as a novel technology.
Progress in ALD is associated with tools, but even more with specifically designed precursors which need to be applied at optimum conditions of the gas feed system, the process chamber and the substrate condition. Our workshop, which is organized by the “ALD Lab Dresden” wants to stimulate discussions between developers of tools, consumables, as well as applicants of this exciting technology.
The self limiting behavior of the heterogeneous reaction can however also be used to remove material from a substrate in an extremely controlled fashion of atomic dimensions. This process, that can be viewed as the complement to ALD is called Atomic Layer Etching (ALEt). As for ALD also ALEt can be a game changer for the semiconductor industry utilizing surface functionalization and modification similar to those we know in ALD and resulting in a chemistry-based material removal on the same atomic level as in ALD – A layer by layer removal.
In general scaling is thought about to be a shrink in the critical dimensions (CD, pitch) in the latheral xy-plane, today scaling is also taking place in the z-direction, i.e.,  a reduction in the thickness of the film stacks like the High-k Metal Gate stack. This has resulted in that the thicknesses of the film stacks of devices today are now routinely approaching <20 Å nm providing an opportunity for slow and precise etching by ALEt.
We hope that this new part of the ALD Lab Dresden Symposium will allow for increased scientific and technological discussion for enabling ALEt and learning from ALD and related plasma based processing techniques like Plasma CVD and Reactive Ion Etching.


 Tuesday, 6 October 2015

 09:00WelcomeOrganized by:


Prof. Johann W. Bartha, TU Dresden

 09:15In situ monitoring of Atomic Layer Deposition in porous materials

Martin Knaut, TU Dresden

 09:40Passivation of MEMS by Atomic Layer Deposition

Matthias Schwille, Robert Bosch

 10:05Growth Monitoring by XPS and LEIS Investigations of Ultrathin Copper Films Deposited by Atomic Layer Deposition

Dileep Dhakal, TU Chemnitz/FhG ENAS

 10:30High-k dielectrics by ALD for BEOL compatible MIM

Wenke Weinreich, FhG IPMS-CNT

 10:55ALD coatings for applications as permeation barrier and protective layer in fiber-reinforced materials
Mario Krug, FhG IKTS

 11:20ALD for solar cell application
Ingo Dirnstorfer, NaMLab

 11:45Plasma enhanced ALD process for TiO2- and WO3- films

Alexander Strobel, FH Zwickau

 12:10Lunch Break (Conversation, Networking, Finger food)

 13:00Why do we need Atomic Layer Etching

Jonas Sundqvist, Lund University/TU Dresden

 13:25Spatial Atomic Layer Deposition and Atomic Layer Etching

Prof. Fred Roozeboom, / TNO Eindhoven

 13:50Atomic Layer Etching: What Can We Learn from Atomic Layer Deposition?

Harm Knoops, Oxford Instruments/TU Eindhoven

 14:15Hardmask and side wall protection during dry etching with plasma enhanced deposition during dry etching for ALE purposes

Stephan Wege, Plasway

 14:40Industrial High Throughput Atomic Layer Deposition Equipment and Process for OLED Encapsulation

Jacques Kools, Encapsulix

 15:05Closing Remarks / Wrap Up

Prof. Johann W. Bartha, TU Dresden



No pre-registration required but you must register as a visitor, in order to gain access to the venue:

No comments:

Post a Comment