Symposium of the ALD-LabWorkshop on Atomic Layer Processing
Date: 6 October 2015
Time: 09:00 - 15:10
Location: Room Columbus, Messe Dresden
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Looking
back in the evolution of IC technology, it can be stated that from the
0.25µm node on, the key for further shrinking was planarization. This
was enabled by the introduction of an emerging technology, the CMP.
Since the 28 nm node it can be observed that, at least in the front end
of line, starting with the FinFET and possibly continuing with the
surrounding gate transistor, the required structures become more and
more three dimensional, while the thickness of the associated films
become extremely thin (gate dielectric, work function layer, barrier
layer). The emerging technology enabling this is Atomic Layer Deposition
(ALD).
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ALD
is based on self limiting heterogeneous chemical reactions which allow
the fabrication of very thin (sub nm to few nm) layers with high
accuracy (basically atomic layer precision), extremely well conformality
and intrinsically high uniformity even in batch tools. Although the
scientific background of ALD goes far back in history, ALD for
semiconductor processing can still be considered as a novel technology.
Progress in ALD is associated with tools, but even more with specifically designed precursors which need to be applied at optimum conditions of the gas feed system, the process chamber and the substrate condition. Our workshop, which is organized by the “ALD Lab Dresden” wants to stimulate discussions between developers of tools, consumables, as well as applicants of this exciting technology. The self limiting behavior of the heterogeneous reaction can however also be used to remove material from a substrate in an extremely controlled fashion of atomic dimensions. This process, that can be viewed as the complement to ALD is called Atomic Layer Etching (ALEt). As for ALD also ALEt can be a game changer for the semiconductor industry utilizing surface functionalization and modification similar to those we know in ALD and resulting in a chemistry-based material removal on the same atomic level as in ALD – A layer by layer removal. In general scaling is thought about to be a shrink in the critical dimensions (CD, pitch) in the latheral xy-plane, today scaling is also taking place in the z-direction, i.e., a reduction in the thickness of the film stacks like the High-k Metal Gate stack. This has resulted in that the thicknesses of the film stacks of devices today are now routinely approaching <20 Å nm providing an opportunity for slow and precise etching by ALEt. We hope that this new part of the ALD Lab Dresden Symposium will allow for increased scientific and technological discussion for enabling ALEt and learning from ALD and related plasma based processing techniques like Plasma CVD and Reactive Ion Etching. | ||
AGENDA | ||
Tuesday, 6 October 2015 | ||
09:00 | Welcome | Organized by: |
Prof. Johann W. Bartha, TU Dresden | ||
09:15 | In situ monitoring of Atomic Layer Deposition in porous materials | |
Martin Knaut, TU Dresden | ||
09:40 | Passivation of MEMS by Atomic Layer Deposition | |
Matthias Schwille, Robert Bosch | ||
10:05 | Growth Monitoring by XPS and LEIS Investigations of Ultrathin Copper Films Deposited by Atomic Layer Deposition | |
Dileep Dhakal, TU Chemnitz/FhG ENAS | ||
10:30 | High-k dielectrics by ALD for BEOL compatible MIM | |
Wenke Weinreich, FhG IPMS-CNT | ||
10:55 | ALD coatings for applications as permeation barrier and protective layer in fiber-reinforced materials | |
Mario Krug, FhG IKTS | ||
11:20 | ALD for solar cell application | |
Ingo Dirnstorfer, NaMLab | ||
11:45 | Plasma enhanced ALD process for TiO2- and WO3- films | |
Alexander Strobel, FH Zwickau | ||
12:10 | Lunch Break (Conversation, Networking, Finger food) | |
13:00 | Why do we need Atomic Layer Etching | |
Jonas Sundqvist, Lund University/TU Dresden | ||
13:25 | Spatial Atomic Layer Deposition and Atomic Layer Etching | |
Prof. Fred Roozeboom, / TNO Eindhoven | ||
13:50 | Atomic Layer Etching: What Can We Learn from Atomic Layer Deposition? | |
Harm Knoops, Oxford Instruments/TU Eindhoven | ||
14:15 | Hardmask and side wall protection during dry etching with plasma enhanced deposition during dry etching for ALE purposes | |
Stephan Wege, Plasway | ||
14:40 | Industrial High Throughput Atomic Layer Deposition Equipment and Process for OLED Encapsulation | |
Jacques Kools, Encapsulix | ||
15:05 | Closing Remarks / Wrap Up | |
Prof. Johann W. Bartha, TU Dresden | ||
15:10 | End | |
Registration
No pre-registration required but you must register as a visitor, in order to gain access to the venue:
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