Wednesday, May 13, 2015

Meaglow reduces oxygen contaminatiaon in PEALD films

Meaglow Ltd has developed a set of simple designs that have allowed the successful adoption of hollow cathode plasma sources in ALD systems, overcoming some of the limitations of the old technologies. The Meaglow solution is enabling the Next Generation of equipment solutions.

Although it was initially adopted because of the lower oxygen contamination seen in nitride materials, advantages of the HC plasma sources for other materials, including oxides, soon became evident. Higher growth rates and lower plasma damage levels being evident, but the simple design of Meaglow’s HC systems also make these a very cost effective alternative.

Below are new information on the upgrade offering from Meaglow and also a white paper on oxygen contamination reduction in PEALD films.

1. Oxygen Contamination in PE-ALD
2. Plasma Source Conversion – ICP to Hollow Cathode for Ultratech/Cambridge Fiji ALD Systems
3. Savannah thermal ALD to Hollow Cathode plasma operation

Comparison of general properties of Capacitively Coupled Plasma (CCP), Inductively Coupled Plasma (ICP), Microwave Plasma (MP) and Hollow Cathode Plasma Sources (HC).

Bilkent University’s Fiji ALD system, converted to hollow cathode plasma source operation.

Savannah 100 conversion used for improved oxide deposition for US government lab.

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