Meaglow Ltd has developed a set of simple designs that have allowed
the successful adoption of hollow cathode plasma sources in ALD systems,
overcoming some of the limitations of the old technologies. The Meaglow
solution is enabling the Next Generation of equipment solutions.
Although it was initially adopted because of the lower oxygen
contamination seen in nitride materials, advantages of the HC plasma
sources for other materials, including oxides, soon became evident.
Higher growth rates and lower plasma damage levels being evident, but
the simple design of Meaglow’s HC systems also make these a very cost
effective alternative.
Below are new information on the upgrade offering from Meaglow and also a white paper on oxygen contamination reduction in PEALD films.
1. Oxygen Contamination in PE-ALD
2. Plasma Source Conversion – ICP to Hollow Cathode for Ultratech/Cambridge Fiji ALD Systems
3. Savannah thermal ALD to Hollow Cathode plasma operation
Comparison of general properties of Capacitively Coupled Plasma (CCP), Inductively Coupled Plasma (ICP), Microwave Plasma (MP) and Hollow Cathode Plasma Sources (HC).
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