New ALD Startup company from Harvard - Anric Technologies

As a new startup company from Boston - Anric Technologies introduces the AT-400. ALD equipment and processes developed from the ground up with three major design goals: ease of use, reproducibility and value.  the AT-400 ALD system is the first product of this design philosophy (www.anrictechnologies.com)

Acording to information at their Japanese representation most of us will identify to famous ALD personalities without any knowledge in Japanese (http://aldjapan.com/) - so I assume Prof. Roy Gordon and Philippe de Rouffignac are both involved in this new start up - I will update as soon as I find more infromation:

開発者の紹介
Philippe de Rouffignac, Ph.D は現在Harvard University, Department of Chemistry (Dr. Roy Gordon)、及びCenter for Nanoscale Systems でCVD/ALD のプレカーサなどの開発を担当。
学生時代もDr. Gordon の元で５台のALDを手作りし、メーカー勤務時代もALD開発に従事。

 

Basic Facts

• Up to 4” diameter sample
• Chamber temperatures from RT to 350 °C ± 1 °C
• Precursor temperatures from RT to 150 °C ± 2 °C with optional heating jackets
• Variable process pressure control 0.1 to 1.5 torr
• All metal sealed system upstream of sample
  • No atmospheric contaminants at sample
• Smallest footprint on market, cleanroom compatible
• Precise precursor dosing with defined dose volumes
  • Reduces process and dose variability common to competitors
• Fast cycling capability
  • 6-10 cycles/min or up to 1.2nm/min Al2O3 (best in class)
  • Exposure control for deposition on high aspect ratio samples
• Robust touchscreen PLC control system
  • roven recipes pre-loaded in controller
• Simple system maintenance and integrated vacuum interlock
• User defined sample fixturing available
• Streamlined chamber design and small chamber volume
  • Designed for high quality growth on small samples
   
• 3 organometallic sources - standard 
  • All three can be heated up to 150 degrees C
  • Our inert gas pressure assist (IGPA) is an option for ultra low vapor pressure precursors
  • 2 counter reactants - standard
  • 1 liquid source such as H2O or H2O
  • 1 gas source such as O2 or NH3
  • 2 gas sources can be used as well
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