Process Power: The New Lithography - Advanced Energy

Here is a very insightful article by PETER GILLESPIE, VP & GM, Semiconductor Products, Advanced Energy Industries on the progress of Plasma RF Generators and Matching Networks. The article looks at applications in 3DNAND High Aspect Ratio Contacts (HARC) and Logic FinFET transitor fabrication using reactive ion etching and plasma CVD using the latest plasma technology. This is a an articel in a series of three in SEMICONDUCTOR DIGEST entitled “Process Power Steps Out from the Shadows,” looking at the leading edge technology node process challenges to highlight key drivers that are fundamentally transforming the role and importance of process power. 

Process Power: The New Lithography (SEMICONDUCTOR DIGEST, LINK) 

 

"Evolution of RF power supplies (plasma generators) and RF matching networks. Today’s RF power delivery systems are highly sophisticated with frequency tuning, complex pulsing regimes, and agile micro-second response." (Below)

 

 

Metal mask coating by ALD for reliable plasma process in PECVD

The PECVD method with metal masks has, in general, been used to deposit inorganic layers like SiNx and SiO2 for manufacturing LCD and OLED displays.

However, this plasma process has severe problems like plasma arcing or particle generation due to instability of electrical isolation between the metal mask and the showerhead as an RF electrode. Therefore it is required to deposit dielectric materials such as Al2O3, Y2O3, TiO2, MgO, ZrO2, etc. on the metal mask to prevent plasma damage.

Typically, the dielectric layer is coated by a sputtering method, also known as physical vapor deposition (PVD). However, this method is difficult to coat the metal mask uniformly with large area and complex structure as well as it has the disadvantage of requiring a thick deposition of several µm and multiple processes.

To obtain excellent electrical isolation properties of metal masks in the PECVD process, the atomic layer deposition (ALD) of Al2O3 thin film might be the best solution which enables getting uniform deposition on them with large area and complex structure. 

ALD Al2O3 layers could give them remarkable electric isolation and great protection, even if the thickness is less than one ㎛. When 50nm ~ 200nm layers of Al2O3 deposited by NCD large-area demo tool on metal masks were applied to the PECVD process, there was no issues like plasma arcing or damage. 

Images of metal mask coated by ALD with Al2O3 a) before (b) after

In fact, even though ALD Al2O3 has lots of advantages, the end customer has to consider of low throughput using general large-area ALD equipment. However, NCD’s Lucida GD Series for large-area ALD applications might be the most suitable equipment with superb productivity to provide superior protective layers to the metal masks from plasma issues in the PECVD process.

NCD has steadily developed large area and high throughput ALD equipment and technology. The applications for display, solar cell, and semiconductor fields have been already commercialized, and also NCD has worked hard to find use in special markets like excellent plasma protective coating on metal masks. NCD will aggressively respond to the development and then supply of ALD equipment, which customers would need for various industries in the future.

Lucida^TM ALD system for metal mask coating.

Source : http://www.ncdtech.co.kr/2018/bbs/board.php?bo_table=eng_board_05&wr_id=48

USITC may close Hanwha’s Patent Infringement Case indefinitely

According to TaiyangNews (LINK), South Korea’s Hanwha Q Cells patent infringement case against solar PV manufacturers JinkoSolar, REC Group and LONGi Solar apparently has hit a bump as JinkoSolar claims that in the next two weeks, the Administrative Law Judge (ALJ) in the US International Trade Commission (USITC) will put a stay on the hearing indefinitely.

The dispute is regarding Hanwa Q Cells patent on employing a surface-passivating dielectric double laye, either Al2O3 or SiN deposited by ALD or PECVD.

US9893215B2 (LINK): Method for manufacturing a solar cell with a surface-passivating dielectric double layer, and corresponding solar cell - A solar cell with a dielectric double layer and also a method for the manufacture thereof are described. A first dielectric layer (3), which contains aluminum oxide or consists of aluminum oxide, and a second, hydrogen-containing dielectric layer (5) are produced by means of atomic layer deposition, allowing very good passivation of the surface of solar cells to be achieved.

Plasma-Therm acquires KOBUS and F.A.S.T ALD & CVD hybride technology

KOBUS, an innovative French company based in Grenoble that has brought a new faster ALD-like technology to production level  has been acquired by US Plasma-Therm. The technology is called F.A.S.T, an alternative to ALD where thick and conformal films are required like e.g. TSV and 3D chip integration or MEMS. F.A.S.T. stands for “Fast Atomic Sequential Technology and is enabled by a innovative CVD reactor design combined with fast pulsing capability. KOBUS has focused on solutions for 3D integration challenges, which fits good to the Plasma-Therms etch and PECVD product portfolio. Plasma-Therm also recently acquired the small Swedish plasma etch/dep OEM Advanced Vacuum who target back-end applications and reverse engineering etchers.

ST. PETERSBURG, Florida (April 4, 2018) — Plasma-Therm today announced that it has acquired KOBUS, an innovative plasma deposition company, which enables F.A.S.T®, a valuable alternative to ALD where thick and conformal films are required.

This unique deposition method is at the crossroads of ALD and CVD: F.A.S.T. stands for “Fast Atomic .Sequential Technology.” F.A.S.T. is enabled by proprietary CVD reactor design combined with pulsing capability, and while capable of depositing in traditional ALD mode, it is optimal for thick and conformal layer deposition and offers new solutions for 3D integration challenges.

Production of the 3rd generation of F.A.S.T. process modules at KOBUS (wwww.kobus-tech.com)

KOBUS offers a unique portfolio of equipment for both mature and advanced materials deposition, which merges well with Plasma-Therm’s operation, expanding the plasma-based deposition and etch suite of products for all silicon and compound semiconductor emerging applications.

This acquisition will allow Plasma-Therm to establish a solid base in Europe and conduct R&D development in the Grenoble “Silicon Valley,” a region fueled with R&D, startups and large semiconductor corporations.

About Plasma-Therm
Plasma-Therm LLC is a manufacturer of leading plasma etch, deposition, and advanced packaging equipment for specialty semiconductor and nanotechnology markets. Plasma-Therm's plasma-processing and advanced-packaging solutions are used in research, pilot manufacturing, and volume production of wireless, photonics, solid state lighting, MEMS/NEMS, data storage and other devices. Learn more at http://www.plasmatherm.com