Monday, June 15, 2015

Update: Technical program ALD 2015 in Moscow Russia, 21-23 Septmber 2015

ALD 2015 in Moscow Russia, 21-23 Septmber 2015, has quite an impressive line up of invited speakers

Call for abstracts

The deadline for abstract submission is July 30, 2015.

Please prepare your abstract according to the template. This document contains all styles necessary for abstract preparation. Name the file as "YourSurname.doc" and send by email to Organizing Committee. Please indicate by email what kind of presentation you prefer: oral or poster.

Dear Russian participants, we have to acknowledge that the expert conclusion on the possibility of publishing of your abstract in press is required since your abstract is planned to be included in the Abstract Book. Please, send its scanned version by email to the Organizing Committee along with Your abstract. Please note, that we cannot guarantee the publication of your work in case we do not get this conclusion.


Technical program


Click to download the Technical Program. Please note, that this is the first version of Technical Program and some changes are possible.

Invited speakers

  • The origins of ML-ALD in the USSR-Russia: from V. B. Aleskovskii◊ôs “framework hypothesis” on the path to precise synthesis of solids, A.A. Malygin, St. Petersburg Technological University, Russia.
  • Atomic Layer Etching Using Thermal Reactions: ALD in Reverse, Steven M. George, University of Colorado at Boulder, USA.
  • How conformal is conformal? Exploring the limits of ALD film conformality with VTT’s lateral microscopic test structure, Riikka Puurunen, VTT, Finland.
  • The nature of electron and hole traps responsible for localization and charge transport in high-k dielectrics, V.A. Gritsenko, Rzhanov Institute of Semiconductor Physics SB RAS.
  • Atomic layer deposition of Ge2Sb2Te5 thin films for phase change memory, Cheol Seong Hwang, Seoul National University, Korea.
  • Atomic layer deposition for rare earth oxides and thermoelectric thin films, Giovanna Scarel, James Medison University, USA.
  • Plasma-assisted ALD: status and prospects, Erwin Von Kessel, Eindhoven University of Technology, Netherlands.
  • In-Situ Studies of ALD on 2D Materials, Robert M. Wallace, University of Texas at Dallas, USA.
  • ALD nanolaminates for solar cell application, Ingo Dirnstorfer, Namlab, Germany.
  • Atomic layer deposition of transition metal dichalcogenides, two-dimensional semiconductors, Annelies Delabie, IMEC, Belgium.
  • Ideal precursor for ALD: Dreams and Reality, I.K. Igumenov, A.V. Nikolaev Institute of Inorganic Chemistry, Russia.
  • Ruthenium and Iridium thin deposition: summary and issues, V.Yu. Vasiliev, Novosibirsk state technical university and SibIS LLC, Russia.
  • ALD of oxides for nanoelectronic devices: status and perspectives, Sabina Spiga, CNR-IMM-MDM, Italy.
  • Gregory N. Parsons, North Carolina State University, USA.
  • Gold Metal Films by Radical-Enhanced Atomic Layer Deposition, Sean Barry, Carleton University, Canada.
  • The synthesis of two dimensional nanomaterials based on Atomic Layer Deposition, Hyungjun Kim, Yonsei University, Korea.
  • Evgeni Gornev, SRIME, Russia. 

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