Monday, March 14, 2016

Photo show NaMLab Novel High-k Materials Workshop in Dresden

Novel High k Application Workshop 2016

In collaboration with the EU COST networking project HerALD (working group 4), NaMLab invites to the Novel High-k Application Workshop on March 14th and 15th, 2016. New challenges offered by the application of high-k dielectric materials in micro– and nanoelectronics will be discussed by more than 80 participants from industry, research institutes and universities. NaMLab created with the workshop a stimulating European platform for application-oriented scientist to exchange ideas and discuss latest experimental results on MIM-capacitors, process technology, leakage & reliability as well as characterization of high-k dielectrics integrated in silicon based micro– and nanoelectronics. In addition, new results in the field of ALD dielectrics in solar cells, transparent conduction oxides (TCOs) and atomic layer etching (ALE) will be discussed. 

Here are pictures from the Event - Day 1:

Networking / Breaks:


Two of the Sponsors of the event Jamal Belgacem from Strem and Andy Stamm Oxford Instruments



The Precursor Buffé from Strem 



Additional sponsors of the event - Sara Wengström from Swedish FAB Support and Paul Williams from Pegasus disussing precursors with very important customers.

Sessions :

 The speakers lining up with USB sticks to upload their presentations


Dr. Karim Cherkaoui, Nanoelectronic Materials and Devices Group (NMD), Tyndall National Lab, Ireland giving a talk on High-k on III/V semiconductors. 

 
J. Roberts from University of Liverpool - Dielectrics for AlGaN/GaN MISHEMT power electronics 


Dr. Jurgen Schubert Peter Grünberg Institute (PGI-9), Forschungszentrum Jülich - Rare eath oxides on GaN


N. Szabo, NaMLab, Dresden - ALD Al2O3 as a high‐k dielectric material for future GaN power devices.


Max Drescher, Fraunhofer IPMS, Dresden - Deciphering Reliability in High‐K Metal Gate Technology. 



Dr. Elke Erben, Globalfoundries, Dresden - Workfunction tuning and gate stack for 22nm FD‐SOI.



Felix Winkler, TU Dresden - Novel vertical TSV field effect transistor using ALD high‐k gate dielectrics


A. Thomas, IFW Dresden - ALD deposited HfO2‐based magnetic tunnel junctions 

 
M. Godlewski, Acad. of Sc. Warsaw, Poland - High‐k oxides by ALD ‐ from applications in electronics to biology and medicine






J. Van Houdt, Imec - High-k in memory devices.



M.H. Park, SNU, Seol, South Korea - Current understanding of ferroelectricity and field‐induced‐ferroelectricity in (Hf,Zr)O2 films based on first order phase transition theory