Thursday, February 10, 2022
ALD for Industry 2022, 29-30 March 2022 in Dresden
Monday, February 7, 2022
Abstract submission - Atomic Layer Processing Modelling Workshop 15-16 March Sweden
Thursday, November 11, 2021
Call for abstracts - AVS 22nd International Conference on Atomic Layer Deposition (ALD 2022) in Ghent, Belgium
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2021 November Networking - ALD at Aalto University
Tuesday, October 5, 2021
Call for Abstracts - 6th Area Selective Deposition Workshop (ASD 2022)
Wednesday, September 29, 2021
Status & Challenges in Today's Atomic Layer Processing Market J. Sundqvist (Keynote TECHCET LLC CA)
Monday, 11 October 2021
Wednesday, June 30, 2021
The ALD conferences for the next coming years were just announced!
2022 - Ghent, Belgium
2023 - Bellevue, Washington, USA
2024 - Helsinki, Finland
Thursday, May 20, 2021
Plasway, Fraunhofer IKTS and BALD Engineering to present fast SiO2 PEALD at ALD2021
Realization and Dual Angle, In-situ
OES Characterization of Saturated 10-100 ms Precursor Pulses in a 300 mm CCP
Chamber Employing de Laval Nozzle Ring Injector for Fast ALD
Abhishekkumar Thakur1,
Stephan Wege1, Sebastian Bürzele1, Elias Ricken1,
Jonas Sundqvist2, Mario Krug3
1Plasway Technologies GmbH, 2BALD
Engineering AB, 3Fraunhofer IKTS
ALD-based spacer-defined multiple
patterning schemes have been the key processes to continued chip scaling, and they
require PEALD or catalytic ALD for low temperature and conformal deposition of
spacers (typically SiO2) on photoresist features for the subsequent
etch-based pitch splitting. Other SiO2 applications in the logic and
the memory segments include gap fill, hard masks, mold oxides, low-k oxides, hermetic
encapsulation, gate dielectric, inter-poly dielectric ONO stack, sacrificial
oxide, optical films, and many more. ALD is limited by low throughput that can
be improved by raising the growth per cycle (GPC), using new ALD precursors,
performing batch ALD or fast Spatial ALD, shrinking the ALD cycle length, or
omitting purge steps to attain the shortest possible ALD cycle. Today’s latest
and highly productive platforms facilitate very fast wafer transport in and out
of the ALD chambers. Current 300 mm ALD chambers for high volume manufacturing
are mainly top-down or cross-flow single wafer chambers, vertical batch furnaces,
or spatial ALD chambers.
We have developed a Fast PEALD
technology [1], realizing individual precursor pulses saturating in the sub-100
ms range. The key feature of the technology is the highly uniform, radial
injection of the precursors into the process chamber through several de Laval
nozzles [2]. To in-situ study (concomitantly from the top and the side of the
wafer surface) individual ALD pulses in the 10-100 ms range, we use two fast
scanning (≤10 ms acquisition time per spectrum ranging from 200 nm to 800 nm)
Optical Emission Spectrometers with a resolution in the range of 0.7 nm.
We present the results for PEALD of
SiO2 exhibiting substrate surface saturation for 30 ms of BDEAS
pulse (Fig. 1) and 50 ms of O2 plasma pulse (Fig. 2). All the processes
were carried out in a 300 mm, dual-frequency (2 MHz and 60 MHz) CCP reactor in
the temperature range of 20 °C to 120 °C and at ~1 Torr max. pulse pressure.
The in-situ, time-resolved OES study of O2 plasma pulse, indicating
saturation of O* (3p5Pà3s5S) emission peak
already at 50 ms pulse duration (Fig. 3, 4) and associated extinction of
reactive O* within 161 ms (Fig. 5), suggest room for yet faster process. The
mean GPC diminishes with the electrostatic chuck temp (Fig. 6).
We will present a more optimized
PEALD SiO2 process and stacking of Fast PEALD SiO2 on top
of Fast PEALD Al2O3 in the same chamber without breaking
the vacuum. The results will comprise XPS, TEM, film growth uniformity across
300 mm wafer, and residual stress investigation for the film stack.
References:
[1] AVS ALD2020, Abstract Number:
2415, Oral Presentation: AM-TuA14
[2] Patent US20200185198A1
ALD/ALE 2021 Technical Program June 27-30, 2021
Virtual Meeting Overview & Highlights
AVS ALD/ALE 2021 Conference Page
Live Tutorial Session with live Q&A Chat Opportunities
(Sunday, June 27, 2021)
- Parag Banerjee (University of Central Florida, USA), “Seeing Is Believing: In situ Techniques for Atomic Layer Deposition (ALD) Process Development and Diagnostics”
- Arrelaine Dameron (Forge Nano, USA), “ALD Powder Manufacturing”
- Henrik Pedersen (Linkoping University, Sweden), “Let’s Talk Dirty – Battling Impurities in ALD Films”
- Riikka Puurunen (Aalto University, Finland), “Fundamentals of Atomic Layer Deposition: An Introduction (“ALD 101”)”
- Fred Roozeboom (Eindhoven University of Technology, The Netherlands), “ALE and ALD: Two Biotopes of a Kind in Atomic-Scale Processing”
Live Plenary, Awards, and Student Finalists with live Q&A Chat Opportunities (Monday, June 28, 2021)
- Plenary Speaker: Steven George (University of Colorado Boulder, USA), “Mechanisms of Thermal Atomic Layer Etching”
- Plenary Speaker: Todd Younkin (Semiconductor Research Corporation, USA), “Materials & Innovation – Essential Elements that Underpin the Next Industrial Revolution
- Live Parallel Technical Sessions with live Q&A Chat Opportunities (Tuesday-Wednesday, June 29-30, 2021)
- On Demand Oral Sessions (Starting Monday, June 28, 2021)
- On Demand Poster Sessions with a Mix of Pre-recorded (Video or Audio) Talks and/or PDF files
Tuesday, April 6, 2021
Abstract submission April 23 (EXTENDED) - 240th ECS Meeting Topic Close-up: Atomic Layer Deposition Applications
Status & Challenges in today's Atomic Layer Processing market Jonas Sundqvist, TECHCET LLC CA, San Diego USA and BALD Engineering Värmdö, Sweden
Symposium focus: The organizers of symposium G01, “Atomic Layer Deposition Applications 17,” encourage abstract submissions on the following (and closely related) topics:
- Semiconductor CMOS applications: development and integration of ALD (atomic layer deposition) high-k oxides and metal electrodes with conventional and high-mobility channel materials;
- Volatile and non-volatile memory applications: extendibility, Flash, MIM (metal-insulator-metal), MIS (metal-insulator-semiconductor), RF (radio-frequency) capacitors, etc.;
- Interconnects and contacts: integration of ALD films with Cu and low-k materials;
- Fundamentals of ALD processing: reaction mechanisms, in situ measurement, modelling, theory;
- New precursors and delivery systems;
- Optical and photonic applications;
- Coating of nanoporous materials by ALD;
- MLD (molecular level deposition) and hybrid ALD/MLD;
- ALD for energy conversion applications such as fuel cells, photovoltaics, etc.;
- ALD for energy storage applications;
- Productivity enhancement, scale-up and commercialization of ALD equipment and processes for rigid and flexible substrates including roll-to-roll deposition;
- Area-selective ALD;
- Atomic Layer Etching (‘reverse ALD’) and related topics aiming at self-limited etching, such as atomic layer cleaning, etc.
Jonas Sundqvist, TECHCET LLC CA, San Diego USA and BALD Engineering Värmdö, Sweden
Invited speakers
- Barry Arkles, Gelest, U.S.
- Karsten Arts, Technische Universiteit Eindhoven, The Netherlands
- Parag Banerjee, University of Central Florida, U.S.
- Necmi Biyikli, University of Connecticut, U.S.
- Jane Chang, University of California, Los Angeles, U.S.
- Lin Chen, Fudan University, China
- Hao-Chung Kuo, National Yang Ming Chiao Tung University, Taiwan
- Noémi Leick, National Renewable Energy Lab, U.S.
- Cathérine Marichy, Université de Lyon, France
- Xiangbo Meng, University of Arkansas, U.S.
- Mattia Pasquali, University of Leuven and Interuniversity Microelectronics Centre (IMEC), Belgium
- Sayeef Salahuddin, University of California, Berkeley, U.S.
- Henrik Sønsteby, Universitetet i Oslo, Norway
- Shuhui Sun, Institut National de la Recherche Scientifique, Université du Québec, Canada
- Angel Yanguas-Gil, Argonne National Laboratory, U.S.
Ola Nilsen, Universitetet i Oslo, Norway
Steven George, University of Colorado Boulder, U.S.
Please visit the meeting website for further information, including travel and visa updates.
Symposium G01 organizers
F. Roozeboom, Technische Universiteit Eindhoven and TNO-Holst Centre, The Netherlands
S. De Gendt, IMEC and Catholic University Leuven, Belgium
J. Dendooven, Ghent University, Belgium
W. Elam, Argonne National Laboratory, U.S.
O. van der Straten, IBM Research, U.S.
A. Illiberi, ASM Europe, Belgium
G. Sundaram, Veeco, U.S.
R. Chen, Huazhong University of Science and Technology, China
O. Leonte, Berkeley Polymer Technology, U.S.
T. Lill, Lam Research, U.S.
M. Young, University of Missouri, U.S.
Monday, April 5, 2021
ALD/ALE 2021 is Going Virtual June 27-30, 2021
Virtual Meeting Overview & Highlights
- Live Tutorial Session with live Q&A Chat opportunities (Sunday, June 27, 2021)
- Live Plenary, Awards, and Student Finalists with live Q&A Chat opportunities (Monday, June 28, 2021)
- Live Parallel Technical Sessions with live Q&A Chat opportunities (Tuesday-Wednesday, June 29-30, 2021)
- On Demand Oral Sessions (Starting Monday, June 28, 2021)
- On Demand Poster Sessions with a Mix of Pre-recorded (Video or Audio) Talks and/or PDF files
- Live and On Demand Sessions available on Mobile App/Online Scheduler through July 31, 2021 and then to AVS members in the AVS Technical Library
AVS ALD/ALE 2021 Web
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Intermolecular at the AVS ASD2021 Workshop, April 6-8.
Day 1: April 6
Poster Session at 2 pm • Lanxia Cheng presents “Area Selective Deposition of Electronics using Multilayer SAM as Surface Passivation.”
Day 2: April 7
Session 4 is chaired by Ravindra Kanjolia., EMD Electronics
Poster Session at 2 pm • Lanxia Cheng presents “Area Selective Deposition of Electronics using Multilayer SAM as Surface Passivation.”
Day 3: April 8
Session 8 at 11:30 am • Ravindra Kanjolia presents, EMD Electronics “Strategies for Area Selective Deposition: From Inherently Selective Precursors to Inhibitor Molecules and Processes.”
12:50 pm • Milind Weling participates on a panel discussion “Area Selective Deposition.”
Thursday, March 18, 2021
Get your ALD-VIP Coupon Code for The Critical Materials Conference CMC2021, 14-15 April 2021
Hey ALD Folks The Critical Materials Conference CMC2021, 14-15 April is coming up with some really powerful guest that will give you deep insights beyond the typical ALD conference offering on topics lie the semiconductor and global economics, Logic Foundry High Volume Manufacturing, Cost of Quality, Metrology and Big Data Machine Learning and Data Crunching for Plasma ALD.
ALD-VIP Coupon Code: Connect2Techcet-75
Carefully selected and invited talks for the ALD-community!- Keynote: Jeanne Yuen-Hum, Vice President of Manufacturing & Operations, and Director of Global Supply-Chain Quality & Reliability, Intel Corporation on "The Cost of Quality"
- G. Dan Hutcheson & Risto Puhakka, CEO & President, VLSI Research Post Pandemic – Semiconductor Industry Trends, Chaos or Order?
- David Thompson, PhD, Managing Director, Chemistry & Device Materials, Applied Materials Maximizing Chemical Utilization & Quality in Precursor Delivery
- Lian-Chen Chi 紀良臻, PhD, Nano-Materials Center Manager, TSMC Materials Quality vs. Technology Ing. Kutup Kurt, PhD, Head of Data Science, MERCK EMD/Versum Power of Hybrid Approach for Data-driven Process Optimization in Semiconductors Industry
- Hugh Gotts, PhD, International Fellow, Air Liquide ALD & CVD Precursors Metrology and Analytics Trends- Driving toward PPQ
- Tsuyoshi Moriya, PhD, MBA, VP Advanced Data Planning, Corporate Innovation Division, TEL The Impact of Machine Learning on Processes & Materials
As a bonus the 1st day we will have a virtual round table discussion on Materials Roadmaping in the industry. All participants are welcome to join.
Conference web for registration and agenda: https://cmcfabs.org/agenda-2021/
Tuesday, March 9, 2021
April 6-8 5th Area Selective Deposition Workshop (ASD 2021)
Key Deadlines: Early Registration Deadline: March 16, 2021 |
- Chris Bates, UC Santa Barbara, USA
- Fabio Grillo, ETH Zurich, Switzerland
- Ravi Kanjolia, EMD Electronics, USA
- Shashank Misra, Sandia National Labs, USA
- Ainhoa Romo Negreira, TEL, Belgium
- Tania Sandoval, Universidad Técnica, Chile
- Kavita Shah, Nova, USA
- Amy Walker, UT Dallas, USA
- Charles Wallace, Intel, USA
Saturday, February 27, 2021
2021 ISSCC - Plenary Session with Dr. Mark Liu, TSMC Chairman
Wednesday, February 24, 2021
The Nanotechnology Show October 13 - 14, 2021 Edison, New Jersey, USA
The Nanotechnology Show October 13 - 14, 2021 Edison, New Jersey, USA
Wednesday, February 3, 2021
Call for Abstracts - The 5th AVS Area Selective Deposition Workshop (ASD 2021)
Wednesday, January 27, 2021
Call for Abstracts ALD & ALE 2021 Tampa,FL, USA
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