Saturday, March 24, 2018

Measuring Hydrogen, Carbon, Oxygen and Iron Contamination in ALD Films

Contamination in ALD for Semiconductors

Atomic layer deposition (ALD) is a useful technique that can produce films that contain high levels of hydrogen, carbon, oxygen and other metals, which are not desirable elements for semiconductor films. To detect any contamination of these elements in semiconductor films, a number of improve plasma sources in nitride-based ALD grown films can be used. Additionally, X-ray photoelectron spectroscopy (XPS) can also be used to detect accurate composition profiles, however for hydrogen, carbon and oxygen concentrations of 5% or less can become background limited. In cases where the hydrogen, carbon and oxygen profiles are 5% or lower, SIMS analysis is often required.
Full article in AZONano as proovided by EAG Laboratories : LINK

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