Saturday, March 31, 2018

Atomic layer etching of gallium nitride - Free download from JVSTA

If you want to know how to ALE GaN using a standard inductively coupled plasma etch system from Oxford Instruments (Plasmalab 100) you have 30 days to download this excellent JVSTA article from Aalto University, Lund University and Fraunhofer IKTS. Next you will be able to learn first hand from Sabbir at the 16th International Conference on Plasma Surface Engineering, September 17 - 21, 2018, in Garmisch-Partenkirchen, Germany (LINK)

Stay tuned for more publications for this fruitful collaboration!

Atomic layer etching of gallium nitride (0001)
Christoffer Kauppinen, Sabbir Ahmed Khan, Jonas Sundqvist, Dmitry B. Suyatin, Sami Suihkonen, Esko I. Kauppinen, and Markku Sopanen
Journal of Vacuum Science & Technology A 35, 060603 (2017) | Read More 

Sabbir Khan adjusting the first recipe for ALE of Silicon on a Oxford Instruments Plasmalab 100 at Lund Nano Lab in Sweden. Later he transferred the process to Aalto University and successfully ALE:ed GaN up there as well.